Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/1999
10/26/1999US5972792 Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
10/26/1999US5972791 Vapor depositing titanium, aluminum, and nitrogen on silicon substate to form electrically conductive diffusion barrier layer of titanium aluminum nitride
10/26/1999US5972790 Depositing titanium onto semiconductor interconnet to form self-aligned titanium silicide structure by plasma-enhanced chemical vapor deposition
10/26/1999US5972789 Method for fabricating reduced contacts using retardation layers
10/26/1999US5972788 Method of making flexible interconnections with dual-metal-dual-stud structure
10/26/1999US5972787 CMP process using indicator areas to determine endpoint
10/26/1999US5972786 Coating contact hole with titanium in dielectric layer to resist electron migration of aluminum atoms, coating with titanium nitride layer; heating; depositing aluminum alloy in contact hole; etching aluminum alloy; forming circuit
10/26/1999US5972785 Depositing metal film on diffusion layer surface and annealing to form metal silicide; removing unreacted metal film by etching; selectively depositing silicon layer on silicide layer; depositing metal film and annealing
10/26/1999US5972784 Arrangement, dopant source, and method for making solar cells
10/26/1999US5972783 Method for fabricating a semiconductor device having a nitrogen diffusion layer
10/26/1999US5972782 Enhancing electronic properties of hydrogenated polycrystalline silicon film by ultrasound treatment
10/26/1999US5972781 Method for producing semiconductor chips
10/26/1999US5972779 Method for forming field oxide film of semiconductor device with silicon and nitrogen containing etching residue
10/26/1999US5972778 Method of fabricating semiconductor device
10/26/1999US5972777 Method of forming isolation by nitrogen implant to reduce bird's beak
10/26/1999US5972776 Method of forming a planar isolation structure in an integrated circuit
10/26/1999US5972775 Method of increasing thickness of field oxide layer
10/26/1999US5972774 Process for fabricating a semiconductor device having contact hole open to impurity region coplanar with buried isolating region
10/26/1999US5972773 High quality isolation for high density and high performance integrated circuits
10/26/1999US5972772 Electron beam drawing process
10/26/1999US5972771 Enhancing semiconductor structure surface area using HSG and etching
10/26/1999US5972770 Method of manufacturing a DRAM capacitor
10/26/1999US5972769 Self-aligned multiple crown storage capacitor and method of formation
10/26/1999US5972768 Method of manufacturing semiconductor device having low contact resistance
10/26/1999US5972766 Method of manufacturing a bipolar transistor by using only two mask layers
10/26/1999US5972765 Providing semiconductor and gate oxide having high concentration of deuterium at interface of gate oxide with semiconductor; forming deuterium reservoir; forming diffusion barrier layer over reservoir layer
10/26/1999US5972764 Method for manufacturing MOS transistor
10/26/1999US5972763 Providing substrate having gate oxide layer and polysilicon layer; polysilicon layer and the gate oxide layer are patterned to form a gate electrode region; forming silicon nitride layer and oxide layer and etching
10/26/1999US5972762 Forming gate oxide on substrate; depositing polysilicon layer and then antireflective coating; etching antireflective coating; doping; depositing silicon nitride layer; forming side wall spacers; recessing; forming source/drain
10/26/1999US5972761 Method of making MOS transistors with a gate-side air-gap structure and an extension ultra-shallow S/D junction
10/26/1999US5972760 Method of manufacturing a semiconductor device containing shallow LDD junctions
10/26/1999US5972759 Method of making an integrated butt contact having a protective spacer
10/26/1999US5972758 Pedestal isolated junction structure and method of manufacture
10/26/1999US5972757 Method of forming a self aligned through-hole on a diffused layer
10/26/1999US5972756 Method of fabricating semiconductor device with a fuse portion
10/26/1999US5972755 Electrostatic protection component and manufacturing method
10/26/1999US5972754 Method for fabricating MOSFET having increased effective gate length
10/26/1999US5972753 Method of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flash
10/26/1999US5972752 Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile
10/26/1999US5972751 Forming silicon dioxide layers on substrate; selectively patterning silicon dioxide layer and additional layer to form stacked gate structure; selectively introducing nitrogen into portion of substrare and adjacent portion of silicon dioxide
10/26/1999US5972750 Nonvolatile semiconductor memory device and manufacturing method of the same
10/26/1999US5972749 Etching first polysilicon layer on substrate; forming isolation layer onto polysilicon layer; forming second polysilicon layer and etching; forming selective layer of silicon nitride and dielectric layer; etching
10/26/1999US5972747 Method of fabricating semiconductor memory device
10/26/1999US5972746 Method for manufacturing semiconductor devices using double-charged implantation
10/26/1999US5972745 Method or forming self-aligned halo-isolated wells
10/26/1999US5972744 Quantum effect device, method of manufacturing the same
10/26/1999US5972743 N-doping a material with antimony using antimony a precursor
10/26/1999US5972742 Forming gate electrodes from metal such as aluminum together with wirings electrically connecting gate electrodes; gate electrodes are anodic oxidized by dipping them as anode in electrolyte to form oxide of metal covering them
10/26/1999US5972741 Method of manufacturing semiconductor device
10/26/1999US5972740 Layout algorithm for generating power supply interconnections for an LSI circuit
10/26/1999US5972739 Method of manufacturing a tab semiconductor device
10/26/1999US5972737 Heat-dissipating package for microcircuit devices and process for manufacture
10/26/1999US5972735 Semiconductor package having integrated circuit chip connected to substrate using wire-bonding is prepared by curing die attach adhesive and encapsulating wire bonds in one heating step
10/26/1999US5972729 Method of manufacturing light-receiving/emitting diode array chip
10/26/1999US5972728 Implanting monitor structure with ions during each ion implant process and implanting control monitor with selected ions; determining concentration profiles for all implanted monitors during wafer electrical tests
10/26/1999US5972727 Reticle sorter
10/26/1999US5972726 Method of detecting concentration of contamination on a semiconductor wafer
10/26/1999US5972724 Process for reducing the surface recombination speed in silicon
10/26/1999US5972723 Enhanced thin film wiring net repair process
10/26/1999US5972722 Adhesion promoting sacrificial etch stop layer in advanced capacitor structures
10/26/1999US5972570 Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
10/26/1999US5972569 Applying photoresist, exposing phtotoresist area, developing exposed photoresist, performing contact etch, performing reisist etch
10/26/1999US5972559 Chemically amplified positive resist compositions
10/26/1999US5972543 Phase shift mask and method of producing the same
10/26/1999US5972540 Formed by thermal deformation of an organic photoresist followed by a chemical mechanical polishing process to prevent occurrence of pattern errors at an 180 degrees/0 degrees phase boundary.
10/26/1999US5972437 Exposing a surface of a semiconductor to a plasma containing oxygen in a reaction chamber at a first pressure in order to remove impurities; maintaining said reaction chamber at a second pressure lower than the first to discharge the
10/26/1999US5972428 Methods and apparatus for material deposition using primer
10/26/1999US5972426 Supplying the coating solution from a reservoir through passages and coating solution holder, rotating the substrate to spread the applied coating solution uniformly over the surface of the substrate under centrifugal forces
10/26/1999US5972293 Aqueous compositions for making ultrapure water used in microelectronic device fabrication processes and methods of sterilizing ultrapure water delivery systems using the same
10/26/1999US5972236 Etchant, etching method using the same, and related etching apparatus
10/26/1999US5972235 Placing etch structure including etch layer underlying polycarbonate layer having apertures in reaction chamber; biasing; etching using low pressure-high density plasma
10/26/1999US5972234 Debris-free wafer marking method
10/26/1999US5972192 Pulse electroplating copper or copper alloys
10/26/1999US5972184 Heating system for high throughput sputtering
10/26/1999US5972183 Getter pump module and system
10/26/1999US5972179 Sputtering titanium layer onto silicon surface, chemical vapor deposition of first titanium nitride (tin) layer with good step coverage, sputtering second titanium nitride layer to improve morphology, coating with aluminum contact layer
10/26/1999US5972178 Continuous process for forming improved titanium nitride barrier layers
10/26/1999US5972163 Plasma cleaning device for substrate
10/26/1999US5972161 Dry etcher apparatus for preventing residual reaction gas from condensing on wafers after etching
10/26/1999US5972154 Methods of dicing flat workpieces
10/26/1999US5972145 Removable passivating polyimide coating and methods of use
10/26/1999US5972127 Loading at least one corner upon a rotor within a processing chamber, rotating the rotor with the at least one carrier supported thereon, spraying cleaning liquid upon the at least one carrier, jetting drying gas
10/26/1999US5972124 Method for cleaning a surface of a dielectric material
10/26/1999US5972123 Transferring ammonium hydroxide from an ammonium hydroxide source and transferring hydrogen fluoride from a hydrogen fluoride source to treatment vessel to prepare ammonium fluoride, treating electronics therewith
10/26/1999US5972116 Method and apparatus for producing a semiconductor device
10/26/1999US5972114 Reduces build-up of metal film deposited on inner surface of process chamber; for manufacturing semiconductro integrated circuits
10/26/1999US5972110 Resist processing system
10/26/1999US5972105 Method of fabricating semiconductor device
10/26/1999US5972096 Coating solutions for use in forming bismuth-based ferroelectric thin films
10/26/1999US5972060 Apparatus for providing a purified resource in a manufacturing facility
10/26/1999US5972051 Method and apparatus for removing particles from semiconductor wafer edges using a particle withdrawing means
10/26/1999US5971836 Grinding machine
10/26/1999US5971768 Methods of fabricating integrated circuit trench isolation regions
10/26/1999US5971734 Mold for ball grid array semiconductor package
10/26/1999US5971701 Semiconductor manufacturing apparatus for transferring articles with a bearing-less joint and method for manufacturing semiconductor device
10/26/1999US5971696 System for carrying-in of cassette for substrates to be processed
10/26/1999US5971608 Apparatus for inspecting bump junction of flip chips and method of inspecting the same
10/26/1999US5971586 Identifying causes of semiconductor production yield loss
10/26/1999US5971577 Light source device and illumination system
10/26/1999US5971527 Ink jet channel wafer for a thermal ink jet printhead
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