| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 07/04/2000 | US6083852 Method for applying films using reduced deposition rates |
| 07/04/2000 | US6083851 HSQ with high plasma etching resistance surface for borderless vias |
| 07/04/2000 | US6083850 Depositing hydrogen silsesquioxane(hsq) gap fill layer on patterned metal layer for gap filling leaving non-planar upper surface; depositing thin layer of silicon oxide and planarizing surface, depositing hsq dielectric interlayer |
| 07/04/2000 | US6083849 Methods of forming hemispherical grain polysilicon |
| 07/04/2000 | US6083848 Removing solder from integrated circuits for failure analysis |
| 07/04/2000 | US6083847 Method for manufacturing local interconnect |
| 07/04/2000 | US6083846 Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon |
| 07/04/2000 | US6083845 Etching method |
| 07/04/2000 | US6083844 Techniques for etching an oxide layer |
| 07/04/2000 | US6083842 Fabrication of a via plug having high aspect ratio with a diffusion barrier layer effectively surrounding the via plug |
| 07/04/2000 | US6083841 Method of etching gallium-nitride based compound semiconductor layer and method of manufacturing semiconductor light emitting device utilizing the same |
| 07/04/2000 | US6083840 Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
| 07/04/2000 | US6083839 Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control |
| 07/04/2000 | US6083838 Oxidizing metal on surface of semiconductor wafer by a slurry comprising abrasive and oxidizing agent, and adding surfactant to reduce rate of oxidaton; removing oxidation product with abrasive to produce planarized surface |
| 07/04/2000 | US6083837 Fabrication of components by coining |
| 07/04/2000 | US6083836 Transistors with substitutionally formed gate structures and method |
| 07/04/2000 | US6083835 Self-passivation of copper damascene |
| 07/04/2000 | US6083834 Zincate catalysis electroless metal deposition for via metal interconnection |
| 07/04/2000 | US6083833 Method for forming conductive film for semiconductor device |
| 07/04/2000 | US6083832 Method of manufacturing semiconductor device |
| 07/04/2000 | US6083831 Semiconductor processing method of forming a contact pedestal, of forming a storage node of a capacitor |
| 07/04/2000 | US6083830 Process for manufacturing a semiconductor device |
| 07/04/2000 | US6083829 Use of a low resistivity Cu3 Ge interlayer as an adhesion promoter between copper and tin layers |
| 07/04/2000 | US6083828 Method for forming a self-aligned contact |
| 07/04/2000 | US6083827 Method for fabricating local interconnect |
| 07/04/2000 | US6083826 Method for manufacturing semiconductor device capable of improving planarization |
| 07/04/2000 | US6083825 Method of forming unlanded via hole |
| 07/04/2000 | US6083824 Borderless contact |
| 07/04/2000 | US6083823 Metal deposition process for metal lines over topography |
| 07/04/2000 | US6083822 Fabrication process for copper structures |
| 07/04/2000 | US6083821 Integrated circuit having a void between adjacent conductive lines |
| 07/04/2000 | US6083820 Mask repattern process |
| 07/04/2000 | US6083819 Method and assembly for providing improved underchip encapsulation |
| 07/04/2000 | US6083818 Electronic devices with strontium barrier film and process for making same |
| 07/04/2000 | US6083817 Cobalt silicidation using tungsten nitride capping layer |
| 07/04/2000 | US6083816 Semiconductor device and method of manufacturing the same |
| 07/04/2000 | US6083815 Pitting of the silicon beneath the gate oxide, caused by penetration of polysilicon etchant through the gate oxide is resolved. |
| 07/04/2000 | US6083814 Method for producing a pn-junction for a semiconductor device of SiC |
| 07/04/2000 | US6083813 Method for forming a compound semiconductor device using a buffer layer over a corrugated surface |
| 07/04/2000 | US6083812 Heteroepitaxy by large surface steps |
| 07/04/2000 | US6083811 Method for producing thin dice from fragile materials |
| 07/04/2000 | US6083810 Poly buffered locos process is disclosed. amorphous silicon is formed by decomposition of disilane at temperatures between 400-525.degree. c. the amorphous silicon exhibits less pits than what is produced by conventional processes |
| 07/04/2000 | US6083809 Oxide profile modification by reactant shunting |
| 07/04/2000 | US6083808 Method for forming a trench isolation in a semiconductor device |
| 07/04/2000 | US6083805 Method of forming capacitors in a semiconductor device |
| 07/04/2000 | US6083804 Method for fabricating a capacitor in a dynamic random access memory |
| 07/04/2000 | US6083803 Semiconductor processing methods of forming a conductive projection and methods of increasing alignment tolerances |
| 07/04/2000 | US6083802 Method for forming an inductor |
| 07/04/2000 | US6083801 Manufacturing method of semiconductor and manufacturing method of semiconductor device |
| 07/04/2000 | US6083800 Method for fabricating high voltage semiconductor device |
| 07/04/2000 | US6083799 Semiconductor processing method of forming a field effect transistor |
| 07/04/2000 | US6083798 Method of producing a metal oxide semiconductor device with raised source/drain |
| 07/04/2000 | US6083797 Buried shallow trench isolation and method for forming the same |
| 07/04/2000 | US6083796 Semiconductor device and method for fabricating the same |
| 07/04/2000 | US6083795 Large angle channel threshold implant for improving reverse narrow width effect |
| 07/04/2000 | US6083794 Method to perform selective drain engineering with a non-critical mask |
| 07/04/2000 | US6083793 Method to manufacture nonvolatile memories with a trench-pillar cell structure for high capacitive coupling ratio |
| 07/04/2000 | US6083792 Manufacturing process of a split gate flash memory unit |
| 07/04/2000 | US6083791 Self-aligned stacked gate etch process for fabricating a two-transistor EEPROM cell |
| 07/04/2000 | US6083790 Method for making y-shaped multi-fin stacked capacitors for dynamic random access memory cells |
| 07/04/2000 | US6083789 Method for manufacturing DRAM capacitor |
| 07/04/2000 | US6083788 Stacked capacitor memory cell and method of manufacture |
| 07/04/2000 | US6083787 Method of fabricating deep trench capacitors for dram cells |
| 07/04/2000 | US6083786 Method for fabricating a load in a static random access memory |
| 07/04/2000 | US6083785 Method of manufacturing semiconductor device having resistor film |
| 07/04/2000 | US6083784 Semiconductor device having MOS transistor |
| 07/04/2000 | US6083783 Method of manufacturing complementary metallic-oxide-semiconductor |
| 07/04/2000 | US6083782 High performance GaAs field effect transistor structure |
| 07/04/2000 | US6083781 Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance |
| 07/04/2000 | US6083780 Semiconductor device and method of fabrication thereof |
| 07/04/2000 | US6083779 Method for fabricating a thin film transistor of a liquid crystal device |
| 07/04/2000 | US6083778 Localized semiconductor substrate for multilevel for transistors |
| 07/04/2000 | US6083775 Method of encapsulating a chip |
| 07/04/2000 | US6083774 Method of fabricating a flip chip mold injected package |
| 07/04/2000 | US6083773 Methods of forming flip chip bumps and related flip chip bump constructions |
| 07/04/2000 | US6083772 Method of mounting a power semiconductor die on a substrate |
| 07/04/2000 | US6083768 Inverted orientation until the viscous material dries or cures enough to maintain definition |
| 07/04/2000 | US6083766 Packaging method of thin film passive components on silicon chip |
| 07/04/2000 | US6083765 Method for producing semiconductor memory device having a capacitor |
| 07/04/2000 | US6083764 Method of fabricating an MTJ with low areal resistance |
| 07/04/2000 | US6083666 Method of forming a bump comprising protuberances |
| 07/04/2000 | US6083665 Without the troubles due to reflection of the exposure light on the substrate surface, oximesulfonate compound as an acid-generating agent; |
| 07/04/2000 | US6083659 Polymer mixture for photoresist and photoresist composition containing the same |
| 07/04/2000 | US6083658 Alkoxymethyl-substituted phenol crosslinking agent, binder polymer, acid generator, and infrared radiation absorber; lithographic printing plates |
| 07/04/2000 | US6083650 Device manufacturing method utilizing concentric fan-shaped pattern mask |
| 07/04/2000 | US6083648 Microlithography reticle exhibiting reduced stresses and methods for manufacturing same |
| 07/04/2000 | US6083572 Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition |
| 07/04/2000 | US6083569 Discharging a wafer after a plasma process for dielectric deposition |
| 07/04/2000 | US6083568 Reducing organic material to form carbides for semiconductor wafers by injection of gas into reactors to form plasma : |
| 07/04/2000 | US6083566 Substrates loading into lock chambers, pumping, loading and transferring |
| 07/04/2000 | US6083451 Method of producing a polycrystalline alumina ceramic which is resistant to a fluorine-comprising plasma |
| 07/04/2000 | US6083419 Polishing composition including an inhibitor of tungsten etching |
| 07/04/2000 | US6083413 Hydrosilation; using halogen compound and organosilicon compound |
| 07/04/2000 | US6083412 Plasma etch apparatus with heated scavenging surfaces |
| 07/04/2000 | US6083376 Inserting a second electrode into a hollow first electrode and immersing both electrodes in a reaction solution; inducing a charge; rotating at least one of said hollow first electrode and said second electrode |
| 07/04/2000 | US6083375 Each pad includes a base pad which is encapsulated within a series of successively electroplated metal encapsulating films to produce a corrosion-resistant terminal metal pad. |
| 07/04/2000 | US6083363 Apparatus and method for uniform, low-damage anisotropic plasma processing |
| 07/04/2000 | US6083361 Reactive gas atoms that react with the sputter particles released from the target produce a compound from the particle atoms and the reactive gas atoms that has a lower sticking characteristic to the side walls of the hole semiconductor |
| 07/04/2000 | US6083358 Multiple species sputtering for improved bottom coverage and improved sputter rate |
| 07/04/2000 | US6083324 Gettering technique for silicon-on-insulator wafers |