Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2000
07/25/2000US6093252 Process chamber with inner support
07/25/2000US6093243 Semiconductor device and its fabricating method
07/25/2000US6093242 Anisotropy-based crystalline oxide-on-semiconductor material
07/25/2000US6093091 Holder for flat subjects in particular semiconductor wafers
07/25/2000US6093087 Wafer processing machine and a processing method thereby
07/25/2000US6093085 Apparatuses and methods for polishing semiconductor wafers
07/25/2000US6093082 Carrier head with a substrate detection mechanism for a chemical mechanical polishing system
07/25/2000US6093081 Polishing method and polishing apparatus using the same
07/25/2000US6093080 Polishing apparatus and method
07/25/2000US6092981 Modular substrate cassette
07/25/2000US6092980 Substrate treatment equipment and method with testing feature
07/25/2000US6092971 Wafer gripping device adapted to swivel wafers taken from a horizontal position in a storage container
07/25/2000US6092851 Wafer carrier having both a rigid structure and resistance to corrosive environments
07/25/2000US6092786 Gate valve
07/25/2000US6092713 Automated stacking and soldering apparatus for three dimensional stack package devices and manufacturing method thereof
07/25/2000US6092542 Cleaning apparatus
07/25/2000US6092539 In-situ cleaning apparatuses for wafers used in integrated circuit devices and methods of cleaning using the same
07/25/2000US6092538 In a closed recycle system for cleaning semiconductors without using any high pressure generating device
07/25/2000US6092537 Post-treatment method for dry etching
07/25/2000US6092485 Apparatus and method for processing substrate
07/25/2000US6092299 Vacuum processing apparatus
07/25/2000US6092280 Flexible interface structures for electronic devices
07/25/2000US6092253 Flexible-leaf substrate edge cleaning apparatus
07/21/2000CA2296621A1 Ultrasonic vibration cutting method and apparatus
07/20/2000WO2000042667A1 A semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and a method of manufacture thereof
07/20/2000WO2000042665A1 Power mos element and method for producing the same
07/20/2000WO2000042662A1 Power semiconductor structural part with a mesa edge
07/20/2000WO2000042661A1 Edge termination for a semiconductor component, schottky diode with an end termination and method for producing a schottky diode
07/20/2000WO2000042660A1 Ferroelectric memory with ferroelectric thin film and method of fabrication
07/20/2000WO2000042657A1 Electronic component and use of a protective structure contained therein
07/20/2000WO2000042653A1 Method for protecting an integrated circuit chip
07/20/2000WO2000042652A1 Semiconductor device and its production method
07/20/2000WO2000042651A1 Semiconductor device
07/20/2000WO2000042650A1 Vacuum treatment device
07/20/2000WO2000042648A1 Attaching a semiconductor to a substrate
07/20/2000WO2000042647A1 Mos transistor and method for making same on a semiconductor substrate
07/20/2000WO2000042646A1 Method for structuring a layer
07/20/2000WO2000042645A1 Low temperature process for fabricating layered superlattice materials and making electronic devices including same
07/20/2000WO2000042644A1 System and method for surface passivation
07/20/2000WO2000042643A1 Ferroelectric device with capping layer and method of making same
07/20/2000WO2000042642A1 Circuit board production method and its apparatus
07/20/2000WO2000042641A1 Method of producing silicon device
07/20/2000WO2000042638A2 Device for positioning a wafer
07/20/2000WO2000042637A1 Method and device for treating tabular substrates, especially silicon wafers for producing microelectronic elements
07/20/2000WO2000042630A1 System for production of large area display panels with improved precision
07/20/2000WO2000042621A2 Epitaxial thin films
07/20/2000WO2000042614A1 Read/write architecture for a mram
07/20/2000WO2000042534A2 Method and arrangement for verifying the layout of an integrated circuit with the aid of a computer and use thereof in the production of an integrated circuit
07/20/2000WO2000042475A1 Chemical filtering for optimising the light transmittance of a gas
07/20/2000WO2000042474A1 Method for depositing photoresist onto a substrate
07/20/2000WO2000042473A1 Multilayer attenuating phase-shift masks
07/20/2000WO2000042381A1 Method and device for inspecting objects
07/20/2000WO2000042373A1 Method and device for drying substrate
07/20/2000WO2000042330A1 Shaft bearing
07/20/2000WO2000042239A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas
07/20/2000WO2000042236A2 Processing system and method for chemical vapor deposition
07/20/2000WO2000042235A1 Film forming device
07/20/2000WO2000042232A1 Tungsten layer forming method and laminate structure of tungsten layer
07/20/2000WO2000042231A2 Polycrystalline silicon germanium films for forming micro-electromechanical systems
07/20/2000WO2000041892A1 Thermal transfer element for forming multilayer devices
07/20/2000WO2000041855A1 Workpiece handling robot
07/20/2000WO2000041854A1 Improved handling of wet thin wafers
07/20/2000WO2000041841A1 Conductive leads with non-wettable surfaces
07/20/2000WO2000041834A1 Method and device for thermally connecting the contact surfaces of two substrates
07/20/2000WO2000041518A2 Electrodeposition chemistry for filling of apertures with reflective metal
07/20/2000WO2000041459A2 Semiconductor element with a tungsten oxide layer and method for its production
07/20/2000WO2000041456A2 Optical detector with a filter layer made of porous silicon and method for the production thereof
07/20/2000WO2000025153A3 Simultaneously achieving circular symmetry and diminishing effects of optical defects and deviations during real time use of optical devices
07/20/2000WO2000019510A3 Elevated channel mosfet
07/20/2000WO2000003421A9 Improved endpoint detection for substrate fabrication processes
07/20/2000DE19963674A1 Oxynitride gate dielectric, especially for a semiconductor memory device, produced by silicon substrate reaction or CVD to form an oxynitride layer and back-oxidation to form an intermediate silicon dioxide layer
07/20/2000DE19936777A1 Electronic circuit system for improved signal transmission efficiency has looped macro circuits that forward signals not designated for them, and accept signals that are designated for them
07/20/2000DE19901767A1 Verfahren und Vorrichtung zum Testen der Funktion einer Vielzahl von Mikrostrukturelementen Method and device for testing the function of a plurality of micro-structural elements
07/20/2000DE19901749A1 Chemical-mechanical wafer polishing pad has angle and depth of curved grooves, which are calculated by boundary layer effect of streamlined groove function, used to design optimum structure for polishing pad
07/20/2000DE19901540A1 Verfahren zur Feinabstimmung eines passiven, elektronischen Bauelementes A method for fine tuning of a passive electronic component
07/20/2000DE19901088A1 Vorrichtung zum Behandeln eines bandförmigen Substrates mit einem Gas An apparatus for treating a strip-shaped substrate with a gas
07/20/2000DE19900970A1 Heat sink device for semiconductor elements or electric motor has extruded lightweight metal base profile provided with projecting spaced cooling ribs
07/20/2000DE19900805A1 Production of ultra-pure water in semiconductor plants comprises varying final degree of purity to suit various processes
07/20/2000DE19900671A1 System for separating disc-shaped substrates for wafer prodn. etc. which are fixed together in sequence on carrier
07/20/2000DE10000690A1 System for determining the yield influence on semiconductor wafers with several matrices in in-line examination and testing
07/20/2000DE10000624A1 Double gate MOST production suppresses n-MOS dopant depletion and p-MOS boron penetration and minimizes outwards diffusion of injected gate electrode impurities
07/20/2000CA2359832A1 Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas
07/20/2000CA2355217A1 Optical detector with a filter layer made of porous silicon and method for the production thereof
07/19/2000EP1020928A1 Thin film capacitor including an anchored metal plug
07/19/2000EP1020927A1 Thin film capacitor comprising a barrier layer between a tantalum pentoxide layer and a copper layer
07/19/2000EP1020926A2 Split gate memory cell
07/19/2000EP1020923A2 Vertical bipolar transistor and method of manufacturing the same
07/19/2000EP1020922A2 Insulated gate field effect transistor and method of manufacture thereof
07/19/2000EP1020921A2 Analog MOSFET devices
07/19/2000EP1020920A2 Semiconductor device having a driver TFT and a pixel TFT on a common substrate and manufacturing method thereof
07/19/2000EP1020919A2 Stacked capacitor DRAM cell
07/19/2000EP1020918A2 DRAM capacitor and method of making the same
07/19/2000EP1020917A2 Semiconductor device and a process for producing same
07/19/2000EP1020916A2 Method for making an integrated circuit including alignment marks
07/19/2000EP1020915A2 Semiconductor device
07/19/2000EP1020907A1 Periphery barrier structure for integrated circuits
07/19/2000EP1020906A2 DRAM capacitor and method of making the same
07/19/2000EP1020905A1 Integrated circuit device having dual damascene interconnect structure and metal electrode capacitor and associated method for making
07/19/2000EP1020904A1 Thermocompression bonding device and bonding head thereof
07/19/2000EP1020903A1 A semiconductor device using a lead frame and its manufacturing method