Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2000
06/15/2000WO2000034986A1 Rapid thermal processing chamber for processing multiple wafers
06/15/2000WO2000034985A2 Method for structuring a metalliferous layer
06/15/2000WO2000034984A2 Transistor with notched gate
06/15/2000WO2000034961A1 Method for forming transparent conductive film by using chemically amplified resist
06/15/2000WO2000034828A1 Method for mask repair using defect compensation
06/15/2000WO2000034796A1 Scanning single electron transistor microscope for imaging ambient temperature objects
06/15/2000WO2000034553A1 Silicon wafer and method of manufacture thereof
06/15/2000WO2000034550A2 Cvd processes using bi aryl
06/15/2000WO2000034549A2 Cvd process using bi alcoxides
06/15/2000WO2000034548A1 Multiple-thickness gate oxide formed by oxygen implantation
06/15/2000WO2000034539A1 Composite material and use thereof
06/15/2000WO2000034381A1 Conductive, low warp polyetherimide resin compositions
06/15/2000WO2000034203A1 High purity, siliconized silicon carbide having high thermal shock resistance
06/15/2000WO2000034201A1 Melted alumina-zirconia ceramic grains, abrasive tools and refractory parts produced from said grains
06/15/2000WO2000034032A1 Underfill film compositions
06/15/2000WO2000033980A1 Surface treatment of semiconductor substrates
06/15/2000WO2000019775B1 Wafer level burn-in and test thermal chuck and method
06/15/2000WO2000010201A9 Process for metal gettering in soi substrates
06/15/2000WO2000004587A3 Nitride based transistors on semi-insulating silicon carbide substrates
06/15/2000WO2000002798A8 Cushioned wafer container
06/15/2000WO1999065074A3 Semiconductor device comprising an integrated circuit provided with a ceramic security coating and method of manufacturing such a device
06/15/2000WO1999050888A3 Semiconductor purification apparatus and method
06/15/2000WO1999015609A8 Aqueous rinsing composition
06/15/2000DE19922614A1 Method to control manufacturing processes of fine structure surfaces in semiconductor manufacturing; involves comparing signatures obtained from diffraction image with references for reference surfaces
06/15/2000DE19860152C1 Layer sequence structuring on silicon wafers by plasma etching involves monitoring photolacquer degradation by activated hydrogen spectral line intensity determination
06/15/2000DE19857640A1 Bipolartransistor und Verfahren zu seiner Herstellung Bipolar transistor and method for its preparation
06/15/2000DE19857593A1 System zur pulsationsfreien Förderung von Flüssigkeiten System for pulsation conveyance of liquids
06/15/2000DE19857527A1 End point of plasma treatment, used e.g. for carbon content reduction of a CVD titanium nitride barrier layer in VLSI manufacture, is determined by in-situ trace gas analysis
06/15/2000DE19856468C1 Verfahren zur Herstellung einer Haltevorrichtung für Halbleiterscheiben A process for producing a holding device for semiconductor wafers
06/15/2000DE19856245A1 Verfahren zur Herstellung von mehrschichtigen Halbleiterstrukturen A process for the production of multilayer semiconductor structures
06/15/2000DE19856142A1 Querfördervorrichtung für einen stapelbaren Träger, insbesondere für einen vertikalen Durchlaufofen durchlaufende Träger, Verfahren zum Betreiben einer solchen Querfördervorrichtung sowie Träger für eine solche Querfördervorrichtung Transverse conveying device for a stackable carriers, particularly for a vertical continuous furnace passing carrier, method for operating such a cross conveyor and carriers for such a transverse conveyor
06/15/2000DE19855655A1 Plasma treatment unit for wafers employs polyimide screws with raised heads avoiding sharp contours to reduce charge concentrations, minimize erosion and increase screw life
06/15/2000DE19855654A1 Wafer clamping ring used for plasma treatment chamber in IC manufacturing has erosion-resistant tips
06/15/2000DE19855637A1 Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung Method and system for manufacturing semiconductor crystal with temperature management
06/15/2000DE19855268A1 Three-dimensional metallic component, e.g. a micro-manufactured, micro-prototyped, medical or ultra-fine engineered component or a micro-injection mould, is produced by layer-wise electrodeposition on a workpiece close to an anode tip
06/15/2000DE19853092A1 Übernahme- und Haltesystem für ein Substrat Acquisition and retention system for a substrate
06/15/2000DE19843624C1 Integrierte Schaltungsanordnung und Verfahren zu deren Herstellung An integrated circuit assembly and method for their preparation
06/15/2000DE19819570C2 Anordnung zum Testen mehrerer Speicherchips auf einem Wafer Arrangement for testing multiple memory chips on a wafer
06/15/2000CA2354522A1 Analogue switch
06/15/2000CA2354268A1 Melted alumina-zirconia ceramic grains, abrasive tools and refractory parts produced from said grains
06/14/2000EP1009199A1 Method for controlling plasma processor
06/14/2000EP1009036A1 High-voltage MOS-gated power device, and related manufacturing process
06/14/2000EP1009035A1 Insulated gate semiconductor device and method for manufacturing the same
06/14/2000EP1009031A2 Semiconductor integrated circuit device and method of producing the same
06/14/2000EP1009029A1 Semiconductor device and method of producing the same
06/14/2000EP1009028A2 Matrix type display apparatus, method of production thereof, and thermocompression bonding head
06/14/2000EP1009027A2 Multipoint conductive sheet
06/14/2000EP1009025A2 Epoxy resin composition for encapsulation of semiconductor devices
06/14/2000EP1009024A1 Method for producing an SOI wafer
06/14/2000EP1009023A1 Method for connecting two conductor structures and resin object
06/14/2000EP1009022A1 Manufacturing process of a high integration density power MOS device
06/14/2000EP1009021A1 Method and assembly for preventing formation of black silicon on edges of wafers
06/14/2000EP1009019A2 Method and apparatus for processing leadframe
06/14/2000EP1009018A2 Apparatus and method for spin-coating semiconductor substrate
06/14/2000EP1008914A2 Microlithographic projection apparatus
06/14/2000EP1008913A1 Photoresist compositions comprising itaconic anhydride polymers
06/14/2000EP1008893A1 Active matrix liquid crystal display
06/14/2000EP1008870A1 Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography
06/14/2000EP1008858A2 Circuit with logic circuit for temperature dependant semi-conductor element test and repair
06/14/2000EP1008824A2 Installation for transversely conveying stackable supports, supports and operating process for such an installation
06/14/2000EP1008671A1 Regeneration of CVD precursors
06/14/2000EP1008668A1 Method and apparatus for manufacturing thin film, thin-film laminate, and electronic parts
06/14/2000EP1008570A1 Method for producing oxide type ceramic sintered body
06/14/2000EP1008414A2 Solder ball connections and assembly process
06/14/2000EP1008189A1 II-VI SEMICONDUCTOR DEVICE WITH BeTe BUFFER LAYER
06/14/2000EP1008186A1 Power transistor cell
06/14/2000EP1008185A1 Semiconductor structure with a silicon carbide material base, with several electrically different sub-regions
06/14/2000EP1008183A1 Memory location arrangement and method for producing the same
06/14/2000EP1008181A1 Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same
06/14/2000EP1008180A1 Gallium arsenide monolithic microwave integrated circuits employing thermally bumped devices
06/14/2000EP1008179A1 Method for producing a matrix from thin film transistors with storage capacities
06/14/2000EP1008178A1 Read-only memory and method for the production thereof
06/14/2000EP1008177A1 Improved active matrix esd protection and testing scheme
06/14/2000EP1008176A1 Method for making an anisotropic conductive coating with conductive inserts
06/14/2000EP1008175A1 Capped interlayer dielectric for chemical mechanical polishing
06/14/2000EP1008174A1 A method of fabricating cmos devices with ultra-shallow junctions and reduced drain area
06/14/2000EP1008173A1 SELECTIVE PLASMA ETCHING OF SILICON NITRIDE IN PRESENCE OF SILICON OR SILICON OXIDES USING MIXTURE OF (NH 3? OR SF 6?) AND HBr AND N 2?
06/14/2000EP1008172A4 Improved interface between titanium and aluminum-alloy in metal stack for integrated circuit
06/14/2000EP1008172A1 Improved interface between titanium and aluminum-alloy in metal stack for integrated circuit
06/14/2000EP1008171A1 METHOD FOR THERMAL SELF-HEALING OF AN SiC SEMICONDUCTOR AREA DOPED BY MEANS OF IMPLANTATION AND A SiC BASED SEMICONDUCTOR COMPONENT
06/14/2000EP1008170A1 Method of controlling dopant concentrations by implanting gettering atoms
06/14/2000EP1008169A1 Producing microstructures or nanostructures on a support
06/14/2000EP1008168A1 Wafer out-of-pocket detector and susceptor leveling tool
06/14/2000EP1008075A1 Computer assisted method for partitioning an electric circuit
06/14/2000EP1007919A1 Method and apparatus for improved temperature control in rapid thermal processing (rtp) systems
06/14/2000EP1007771A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
06/14/2000EP1007769A1 Device and method for growing crystals
06/14/2000EP1007768A2 Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature
06/14/2000EP1007767A1 Method for producing a filter
06/14/2000EP1007762A1 Method and apparatus for detecting the endpoint of a chamber cleaning
06/14/2000EP1007761A1 Gas distribution system for a process reactor and method for processing semiconductor substrates
06/14/2000EP1007759A1 Modulated power for ionized metal plasma deposition
06/14/2000EP1007308A4 Aerosol method and apparatus, particulate products, and electronic devices made therefrom
06/14/2000EP1007308A1 Aerosol method and apparatus, particulate products, and electronic devices made therefrom
06/14/2000EP1007275A1 Cavitational polishing pad conditioner
06/14/2000EP1007249A1 Method for producing a cooling element, and a cooling element
06/14/2000EP0956585A4 Method for formation of thin film transistors on plastic substrates
06/14/2000CN1256794A Method of detaching thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate and liquid crystal display
06/14/2000CN1256793A Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device
06/14/2000CN1256792A 三维器件 3D device