Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2000
07/18/2000US6090697 Etchstop for integrated circuits
07/18/2000US6090696 Dry or wet etching to roughen the surface
07/18/2000US6090695 Method for forming self-aligned landing pads
07/18/2000US6090694 Local interconnect patterning and contact formation
07/18/2000US6090693 Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors
07/18/2000US6090692 Fabrication method for semiconductor memory device
07/18/2000US6090691 Method for forming a raised source and drain without using selective epitaxial growth
07/18/2000US6090690 Direct gas-phase doping of semiconductor wafers using an organic dopant source
07/18/2000US6090689 Method of forming buried oxide layers in silicon
07/18/2000US6090688 Method for fabricating an SOI substrate
07/18/2000US6090687 System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein
07/18/2000US6090686 Locos isolation process using a layered pad nitride and dry field oxidation stack and semiconductor device employing the same
07/18/2000US6090685 Method of forming a LOCOS trench isolation structure
07/18/2000US6090684 Method for manufacturing semiconductor device
07/18/2000US6090683 Thermal oxidation and decomposition of tetraethyl silicate; etching silicon nitride and vapor etching silicon dioxide with anhydrous hydrogen fluoride
07/18/2000US6090682 Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top
07/18/2000US6090681 Method of forming an HSG capacitor layer via implantation
07/18/2000US6090680 Manufacturing process for a capacitor
07/18/2000US6090679 Method for forming a crown capacitor
07/18/2000US6090678 I. C. thin film processing and protection method
07/18/2000US6090677 Methods of thermal processing and rapid thermal processing
07/18/2000US6090676 Process for making high performance MOSFET with scaled gate electrode thickness
07/18/2000US6090675 Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition
07/18/2000US6090674 Method of forming a hole in the sub quarter micron range
07/18/2000US6090673 Device contact structure and method for fabricating same
07/18/2000US6090672 Ultra short channel damascene MOS transistors
07/18/2000US6090671 Reduction of gate-induced drain leakage in semiconductor devices
07/18/2000US6090669 Growing lightly doped n-type epitaxial layer on heavily doped n-type substrate, growing oxide on upper portion of epitaxial layer, masking and doping boron ions, etching oxide to expose regions for aluminum doping; masking, thermal diffusion
07/18/2000US6090668 Method to fabricate sharp tip of poly in split gate flash
07/18/2000US6090667 Method of manufacturing floating gate type transistor
07/18/2000US6090666 Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal
07/18/2000US6090665 Method of producing the source regions of a flash EEPROM memory cell array
07/18/2000US6090664 Method for making a stacked DRAM capacitor
07/18/2000US6090663 Method for forming a high-density DRAM cell with a rugged polysilicon cup-shaped capacitor
07/18/2000US6090662 Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device
07/18/2000US6090661 Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
07/18/2000US6090660 Method of fabricating a gate connector
07/18/2000US6090659 Forming silicon dioxide layer on semiconductor substrate; forming film of barium and lead; diffusing barium and lead atoms into silicon dioxide layer by heating; forming top electrode on dielectric layer
07/18/2000US6090658 Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer
07/18/2000US6090657 Forming insulator layers on semiconductor substrates; forming protective layers; electrode layers; forming ferroelectric thin film layer; forming upper electrode layer on thin film patterning protective layers; forming upper insulator layers
07/18/2000US6090656 Linear capacitor and process for making same
07/18/2000US6090655 Increased interior volume for integrated memory cell
07/18/2000US6090654 Method for manufacturing a static random access memory cell
07/18/2000US6090653 Method of manufacturing CMOS transistors
07/18/2000US6090652 Method of manufacturing a semiconductor device including implanting threshold voltage adjustment ions
07/18/2000US6090651 Depositing initial phase layer on semiconductor; impregnating dopant within initial phase and annealing without heating semiconductor; cooling liquefied initial phase to freeze dissolved dopant in supersaturated activated concentration
07/18/2000US6090650 Method to reduce timing skews in I/O circuits and clock drivers caused by fabrication process tolerances
07/18/2000US6090649 Heterojunction field effect transistor and method of fabricating the same
07/18/2000US6090648 Provideing sapphire substrate with silicon layer; forming polysilicon layer over silicon layer; defining silicon island in first silicon layer; doping with desired conductivity determining material to form resistor region
07/18/2000US6090646 Method for producing semiconductor device
07/18/2000US6090645 Fabrication method of semiconductor device with gettering treatment
07/18/2000US6090641 Electro-thermal nested die-attach design
07/18/2000US6090638 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom
07/18/2000US6090637 Fabrication of II-VI semiconductor device with BeTe buffer layer
07/18/2000US6090634 Failure analysis apparatus of semiconductor integrated circuits and method thereof
07/18/2000US6090633 Multiple-plane pair thin-film structure and process of manufacture
07/18/2000US6090632 Method for controlling semiconductor processing equipment in real time
07/18/2000US6090530 Heating substrate using thermal energy in pressurized procesing chamber; applying electromagnetic energy to electrode to strike a plasma to plasma-polymerize precursor gas methylsilane to deposit polymer film on substrate
07/18/2000US6090528 Generating electron beam; shaping by directing it through square aperture in lamina having serrated edge encircling aperture; projecting electron beam as square or rectangular spot onto potoresist layered on substrate
07/18/2000US6090526 Chemically-amplified positive-acting resin binder having phenolic units and acetalester or ketalester units; deprotection; acid-generating photocatalyst; resolution; fineness; etching resistance, especially halogen compounds
07/18/2000US6090523 Multi-resin material for an antireflection film to be formed on a workpiece disposed on a semiconductor substrate
07/18/2000US6090522 For inhibition of reverse reactions of a protecting group elimination reaction, to thereby increase the dissolution contrast and resolution; for use in a photolithography step in the production of a semiconductor device
07/18/2000US6090507 Methods for repair of photomasks
07/18/2000US6090468 Insulation adhesive layer which is a semi-cured product of an epoxy group-containing acrylic rubber
07/18/2000US6090453 Preparing a thermal ink jet printhead by the curing process; halomethyl group substituents enable crosslinking or chain extension of the polymer
07/18/2000US6090448 Polyol-based precursors for producing nanoporous silica thin films
07/18/2000US6090446 Method of forming particle layer on substrate, method of planarizing irregular surface of substrate and particle-layer-formed substrate
07/18/2000US6090443 Multi-layer approach for optimizing ferroelectric film performance
07/18/2000US6090304 Improving the selectivity of dielectric layers to photoresist layers and base layers. etchant source gas which consists essentially of n2 and c3f6.
07/18/2000US6090303 Process for etching oxides in an electromagnetically coupled planar plasma apparatus
07/18/2000US6090301 Method for fabricating bump forming plate member
07/18/2000US6090263 Process for coating an article with a conformable nickel coating
07/18/2000US6090261 Method and apparatus for controlling plating over a face of a substrate
07/18/2000US6090239 Method of single step damascene process for deposition and global planarization
07/18/2000US6090237 Apparatus for restraining adhesive overflow in a multilayer substrate assembly during lamination
07/18/2000US6090220 Decontamination of upper wafer surface with a positive pressure gas flow, subsequently vacuum attaching wafer to transfer support and moving to desired position
07/18/2000US6090217 Surface treatment of semiconductor substrates
07/18/2000US6090216 Uniformly and efficiently washing liquid paint dispenser nozzle tip with fluid flow from dispenser which hermetically seals nozzle during cleaning
07/18/2000US6090212 Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
07/18/2000US6090210 Multi-zone gas flow control in a process chamber
07/18/2000US6090209 Thermal conditioning apparatus
07/18/2000US6090206 Throttle valve providing enhanced cleaning
07/18/2000US6090188 Air intake apparatus of chemical vapor deposition equipment and method for removing ozone using the same
07/18/2000US6090176 Sample transferring method and sample transfer supporting apparatus
07/18/2000US6090167 Substrate processing system includes rf power, controller and memory storing a program for direction of chemical vapor deposition; helium added at increased rate to stabilize the deposited layer so no hydrofluoric acid outgasses
07/18/2000US6089966 Surface polishing pad
07/18/2000US6089965 Polishing pad
07/18/2000US6089920 Modular die sockets with flexible interconnects for packaging bare semiconductor die
07/18/2000US6089811 Production line workflow and parts transport arrangement
07/18/2000US6089763 Semiconductor wafer processing system
07/18/2000US6089762 Developing apparatus, developing method and substrate processing apparatus
07/18/2000US6089630 Substrate transfer apparatus
07/18/2000US6089548 Process and device for converting a liquid stream flow into a gas stream flow
07/18/2000US6089543 Two-piece slit valve door with molded-in-place seal for a vacuum processing system
07/18/2000US6089463 Cooling system of a semiconductor testing device
07/18/2000US6089439 Wire cutting and feeding device for use in wire bonding apparatus
07/18/2000US6089377 Semiconductor wafer carrier
07/18/2000US6089183 Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
07/18/2000US6089181 Plasma processing apparatus
07/18/2000US6089151 Method and stencil for extruding material on a substrate