Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2000
10/11/2000CN1057402C Method for packing semiconductor
10/11/2000CN1057401C Semiconductor device and its producing method
10/11/2000CN1057392C Improved method for mfg. of array of thin film actuated mirrors
10/11/2000CN1057351C Thermal treatment method for silicon sheet
10/11/2000CN1057349C Plasma processing method and plasma processing apparatus
10/11/2000CN1057330C Cleaning method for semiconductor wafers
10/10/2000US6131073 Electronic circuit with an operating characteristic correcting function
10/10/2000US6131052 Semiconductor manufacturing non-processing apparatuses with storage equipment
10/10/2000US6130845 Dynamic type semiconductor memory device having function of compensating for threshold value
10/10/2000US6130839 Methods of programming, erasing and reading a flash memory
10/10/2000US6130838 Structure nonvolatile semiconductor memory cell array and method for fabricating same
10/10/2000US6130836 Semiconductor IC device having a control register for designating memory blocks for erasure
10/10/2000US6130751 Positioning method and apparatus
10/10/2000US6130750 Optical metrology tool and method of using same
10/10/2000US6130747 Method of measuring aberrations of lens
10/10/2000US6130602 Radio frequency data communications device
10/10/2000US6130575 High-speed switching regulator drive circuit
10/10/2000US6130571 Semiconductor device with fine-adjustable resistance
10/10/2000US6130567 Semiconductor delay circuit having inverter circuits and transfer gates
10/10/2000US6130544 System for evaluating probing networks
10/10/2000US6130543 Inspection method and apparatus for semiconductor integrated circuit, and vacuum contactor mechanism
10/10/2000US6130542 Method for quantitating impurity concentration in a semiconductor device
10/10/2000US6130485 Semiconductor integrated circuit and layout method thereof
10/10/2000US6130484 Semiconductor device
10/10/2000US6130482 Semiconductor device and method for fabricating the same
10/10/2000US6130481 Semiconductor integrated circuit interconnection structures and method of making the interconnection structures
10/10/2000US6130480 Structure for packaging semiconductor chip
10/10/2000US6130479 Minimizing the formation of intermetallic compounds in solder joints used in making electrical interconnections in electronic packaging of semiconductor devices
10/10/2000US6130476 Semiconductor chip package having chip-to-carrier mechanical/electrical connection formed via solid state diffusion
10/10/2000US6130473 Lead frame chip scale package
10/10/2000US6130472 Moisture and ion barrier for protection of devices and interconnect structures
10/10/2000US6130467 Shallow trench isolation with spacers for improved gate oxide quality
10/10/2000US6130463 Field effect transistor and method of manufacturing same
10/10/2000US6130462 Vertical poly load device in 4T SRAM technology
10/10/2000US6130461 Semiconductor memory device
10/10/2000US6130460 Interconnect track connecting, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit, and process for producing such a track
10/10/2000US6130459 Over-voltage protection device for integrated circuits
10/10/2000US6130458 Power IC having SOI structure
10/10/2000US6130457 Semiconductor-on-insulator devices having insulating layers therein with self-aligned openings
10/10/2000US6130456 Thin film transistor matrix device
10/10/2000US6130455 Semiconductor device, thin film transistor having an active crystal layer formed by a line containing a catalyst element
10/10/2000US6130453 Flash memory structure with floating gate in vertical trench
10/10/2000US6130452 Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
10/10/2000US6130451 High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tantalum, and semiconductor device using the same
10/10/2000US6130450 Stacked capacitor-type semiconductor storage device and manufacturing method thereof
10/10/2000US6130449 Semiconductor memory device and a method for fabricating the same
10/10/2000US6130446 Blue light emitting diode, laser diode, or light receiving element; aluminum layer, silicon layer, nickel layer and gold layer are laminated in this order on an n-type gallium nitride
10/10/2000US6130443 Thin film transistor array panel for liquid crystal display comprising gate pattern including gate line, gate electrode and pad formed on a transparent substrate, gate insulating layer covering gate pattern, amorphous silicon layer
10/10/2000US6130442 Memory chip containing a non-volatile memory register for permanently storing information about the quality of the device and test method therefor
10/10/2000US6130432 Particle beam system with dynamic focusing
10/10/2000US6130415 Low temperature control of rapid thermal processes
10/10/2000US6130414 Systems and methods for controlling semiconductor processing tools using measured current flow to the tool
10/10/2000US6130401 Device and method for machining transparent medium by laser
10/10/2000US6130397 Thermal plasma annealing system, and annealing process
10/10/2000US6130383 Solder ball array package and a method of encapsulation
10/10/2000US6130345 Copper (1) precursors for chemical deposit in gas phase of metallic copper
10/10/2000US6130264 Synthetic sponge and surgical spear comprising synthetic sponge
10/10/2000US6130173 Reticle based skew lots
10/10/2000US6130172 Radiation hardened dielectric for EEPROM
10/10/2000US6130171 Residue removal process for forming inter-level insulating layer of paraylene polymer without peeling
10/10/2000US6130170 Process improvements for titanium-tungsten etching in the presence of electroplated C4's
10/10/2000US6130169 Uses cf4, o2, and h2o as etchant gases in a downstream chamber at a low pressure, which are ionized by radio waves
10/10/2000US6130168 Using ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM process
10/10/2000US6130167 Prevent attack of an aluminum based structure, exposed in a non-fully landed via hole, from solvents used during the wet stripping cycle, performed to remove the via hole defining photoresist shape
10/10/2000US6130166 Alternative plasma chemistry for enhanced photoresist removal
10/10/2000US6130165 Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates
10/10/2000US6130164 Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof
10/10/2000US6130162 Method of preparing passivated copper line and device manufactured thereby
10/10/2000US6130161 Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
10/10/2000US6130160 Amine complexes include a group iiia metal, and are particularly suitable for use in a chemical vapor deposition system.
10/10/2000US6130159 Apparatus and methods for minimizing as-deposited stress in tungsten silicide films
10/10/2000US6130158 Filling connection hole with wiring material by using centrifugal force
10/10/2000US6130157 Method to form an encapsulation layer over copper interconnects
10/10/2000US6130156 Patterned metal interconnect on a first level which is to be connected to a second level of metal interconnect.
10/10/2000US6130155 Oxidizing the top layer of titanium/titanium nitride to form a layer of titanium oxide; and patterning and etching the composite metal layer to form the metal lines.
10/10/2000US6130154 Satisfactory bonding avility of a plasma siof oxide layer on a wiring
10/10/2000US6130153 Interconnection fabrication method for semiconductor device
10/10/2000US6130152 Oligomerized metal alkoxide (such as teos), a high vapor pressure solvent (such as ethanol) and a low vapor pressure solvent (such as water and 1-butanol)
10/10/2000US6130151 Method of manufacturing air gap in multilevel interconnection
10/10/2000US6130150 Method of making a semiconductor device with barrier and conductor protection
10/10/2000US6130149 Approach for aluminum bump process
10/10/2000US6130146 In-situ nitride and oxynitride deposition process in the same chamber
10/10/2000US6130145 Insitu doped metal policide
10/10/2000US6130144 Method for making very shallow junctions in silicon devices
10/10/2000US6130143 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130142 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130141 Flip chip metallization
10/10/2000US6130140 Method of forming an isolation structure in a semiconductor device
10/10/2000US6130139 Method of manufacturing trench-isolated semiconductor device
10/10/2000US6130138 Methods of forming integrated circuit capacitors having doped dielectric regions therein
10/10/2000US6130137 Method of forming a resistor and integrated circuitry having a resistor construction
10/10/2000US6130136 Bipolar transistor with L-shaped base-emitter spacer
10/10/2000US6130135 Method of fabricating lightly-doped drain transistor having inverse-T gate structure
10/10/2000US6130134 Method for forming asymmetric flash EEPROM with a pocket to focus electron injections
10/10/2000US6130133 Fabricating method of high-voltage device
10/10/2000US6130132 Clean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peak
10/10/2000US6130131 Method for fabricating a flash memory
10/10/2000US6130130 Semiconductor device and a method for manufacturing thereof
10/10/2000US6130129 Method of making self-aligned stacked gate flush memory with high control gate to floating gate coupling ratio
10/10/2000US6130128 Method of fabricating crown capacitor
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