Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2001
05/31/2001WO2001009925A3 Apparatus and method for texture analysis on semiconductor wafers
05/31/2001WO2000057468A3 Electric circuit and its method of production
05/31/2001WO2000055105A3 Explosive shear wave energy source
05/31/2001WO2000051165A3 Misfet with narrow bandgap source
05/31/2001WO2000048252A3 Electrostatic discharge protection of integrated circuits
05/31/2001WO2000003421A3 Improved endpoint detection for substrate fabrication processes
05/31/2001WO1999066533A9 Semiconductor process chamber electrode and method for making the same
05/31/2001WO1999034939A8 Wafer container washing apparatus
05/31/2001US20010002461 Circuit and method for specifying performance parameters in integrated circuits
05/31/2001US20010002447 Substrate transport apparatus and transport teaching system
05/31/2001US20010002361 Polishing liquid supply apparatus
05/31/2001US20010002360 Case for storing a grinding wheel
05/31/2001US20010002341 Microelectronic contact structure, and method of making same
05/31/2001US20010002340 Microelectronic contact structure, and method of making same.
05/31/2001US20010002339 Shaping members with curved outer side surface are pivotally connected with the substrate support, gravity biases shaping members downward until angular velocity of support provids a force to bias members upward to establish a circular surface
05/31/2001US20010002338 Method of preventing generation of particles in chamber
05/31/2001US20010002337 Semiconductor processing methods of forming openings to devices and substrates, exposing material from which photoresist cannot be substantially selectively removed, forming a series of conductive lines, and removing photoresist from substrates
05/31/2001US20010002336 Local etching the wafer while maintaining a distance between a plasma discharge location and the wafer surface at a predetermined value by using the halogen gas fed inside alumina discharge tube to produce activated etching gas
05/31/2001US20010002335 Two step chemical mechanical polishing includes first step which is carried out on a polishing pad using first slurry having an oxidizer and acidic pH for removal of tunsten layer, second polishing pad using a slurry of abrasives
05/31/2001US20010002334 Chemical vapor deposition of an underlayer protective titanium nitride (TiN) film on an underlayer, followed by a main TiN film on the protective film; prevents chlorine ion from titanium chloride (TiCl4) contamination
05/31/2001US20010002333 Barrier layer on the diffusion barrier layer is removed before forming the conductive layer in the trench and via hole, then forming conductive layer by selective deposition, only in the trench and via hole
05/31/2001US20010002332 Mask and method for forming dynamic random access memory (DRAM) contacts
05/31/2001US20010002331 Method for fabricating multi-layered wiring
05/31/2001US20010002330 Integrated circuit assembly has pads of a chip electrically connected to pads of a substrate with rolling metal balls, a pliable material bonds the balls in movable contact with the pads, avoiding thermal stress
05/31/2001US20010002329 Structure and fabrication process of silicon on insulator wafer
05/31/2001US20010002328 Method for homogenizing device parameters through photoresist planarization
05/31/2001US20010002327 Power MOS device with increased channel width and process for forming same
05/31/2001US20010002326 To form a barrier layer having uniform composition along a depth of a contact hole or via of an integrated circuit
05/31/2001US20010002325 Thin film transistor and manufacturing method of thin film transistor
05/31/2001US20010002324 Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site
05/31/2001US20010002323 Forming thin films by applying a solution of dielectric, heat-curing resin, evaporating the solvent and curing; where the solution contains gas generating additives or solvents that cause dedensification and lower dielectric constant
05/31/2001US20010002317 Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors
05/31/2001US20010002307 Forming a gettering layer and hard mask layer on the dielectric layer in sequence, gettering layer suppresses penetration of moisture of alkali metal ions, and hard mask layer blocks light; precision of exposure is improved
05/31/2001US20010002304 Methods of reducing proximity effects in lithographic processes
05/31/2001US20010002301 Projection-exposure methods and apparatus exhibiting increased throughput
05/31/2001US20010002285 Streams of active particles are created, these being directed onto the surface which is to be treated, and caused to interact with the surface
05/31/2001US20010002283 Apparatus for clamping a planar substrate
05/31/2001US20010002280 Depositing a monolayer of metal on the substrate surface by flowing a molecular precursor gas or vapor bearing the metal over a surface, flowing at least one radical species into the chamber and over the surface
05/31/2001US20010002278 Heating the substrate to a deposition temperature by a cureent flow through heater filaments, discontinuing current flow to the heater filament, initiating deopositon of material layer subsequent to discontinuing current flow
05/31/2001US20010002273 Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas
05/31/2001US20010002179 LSI device with memory and logics mounted thereon
05/31/2001US20010002173 Semiconductor storage device and production method thereof
05/31/2001US20010002163 Process for mounting electronic device and semiconductor device
05/31/2001US20010002162 Process for mounting electronic device and semiconductor device
05/31/2001US20010002149 Sample inspection system
05/31/2001US20010002112 Method and apparatus for the replacement of non-operational metal lines in DRAMS
05/31/2001US20010002072 Creation of subresolution features via flow characteristics
05/31/2001US20010002071 Boron incorporated diffusion barrier material
05/31/2001US20010002070 Semiconductor device and manufacturing process thereof
05/31/2001US20010002069 Semiconductor device and manufacturing method thereof
05/31/2001US20010002066 Semiconductor device, lead-patterning substrate, and electronics device, and method for fabricating same
05/31/2001US20010002065 Integrated circuit package having interchip bonding and method therefor
05/31/2001US20010002064 Semiconductor device and manufacturing method thereof
05/31/2001US20010002063 Lateral Bipolar Transistor
05/31/2001US20010002061 Self-aligned in situ doped plug emitter
05/31/2001US20010002060 Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods
05/31/2001US20010002059 Buried shallow trench isolation and method for forming the same
05/31/2001US20010002058 Semiconductor apparatus and method of manufacture
05/31/2001US20010002057 Semiconductor device and wiring method thereof
05/31/2001US20010002056 Process for manufacturing integrated circuit SRAM
05/31/2001US20010002055 Mini FLASH process and circuit
05/31/2001US20010002053 Capacitor constructions
05/31/2001US20010002050 Thin-film transistor array and method of fabricating the same
05/31/2001US20010002047 Thin film transistor and method of manufacturing the same
05/31/2001US20010002044 Method of disposing conductive bumps onto a semiconductor device and semiconductor devices so formed
05/31/2001US20010002038 Spool holder structure for a wire bonder
05/31/2001US20010002032 Wire bonding apparatus
05/31/2001US20010002031 Wire bonding apparatus
05/31/2001US20010002026 Chemical delivery systems and methods of delivery
05/31/2001US20010001989 Microelectronic connections with liquid conductive elements
05/31/2001US20010001976 Apparatus and method for fabricating buried and flat metal features
05/31/2001US20010001975 Member separating apparatus and processing apparatus
05/31/2001US20010001954 Forming a titanium/titanium nitride film on a semiconductor substrate surface by vapor deposition where the substrate support has a protective silicon nitride coating to prevent contamination the support material; no current leakage
05/31/2001US20010001953 Support apparatus for semiconductor wafer processing
05/31/2001US20010001951 Particulary of all types of storage disks for reactive and nonreactive processes; a carrousel-type conveyor for rotating about an axis and a transport element to be moved out and back radially and controlled at given positions; apertures
05/31/2001US20010001950 Sharing vacuum pumps by evacuating the main chamber and auxilary chambers by pumps arranged in series; connected and sharing a drive motor; etching and vapor deposition of semiconductor wafers; efficiency
05/31/2001US20010001943 Methods of producing doped semiconductors
05/31/2001US20010001936 Trimming apparatus having punches with air flow routes for removal of gate scraps
05/31/2001US20010001924 Temperature control system
05/31/2001US20010001902 Vacuum processing apparatus and operating method therefor
05/31/2001US20010001901 Vacuum processing apparatus and operating method therefor
05/31/2001US20010001888 Buffer system for a wafer handling system field of the invention
05/31/2001US20010001886 Brush scrubbing apparatus
05/31/2001DE19957302A1 Substrate used in the production of integrated circuits comprises a first insulating layer on the substrate, a second insulating layer on the first insulating layer, hollow chambers
05/31/2001DE19957130A1 Metallizing dielectric materials comprises applying a photosensitive dielectric to a substrate, irradiating the dielectric through a mask, growing a metal, subjecting to high temperatures and chemically metallizing
05/31/2001DE19956903A1 Process for the integration of PIN diodes comprises depositing a diode structure on a substrate, structuring a mesa structure, producing a metal bump, bonding a heat sink to the bump
05/31/2001DE19956565A1 Manufacturing heat sink for electrical components involves structuring metallisation on at least one of two or more substrates with metallisation and channel openings on ceramic layer
05/31/2001DE19956078A1 Production of an insulating collar in a trench capacitor comprises forming a trench in the substrate, forming an insulating layer in the trench, filling with filler material
05/31/2001DE19955969A1 Verwendung von Polyimid für Haftschichten und lithographisches Verfahren zur Herstellung von Mikrobauteilen The use of polyimide for subbing layers, and lithographic process for manufacturing micro-components
05/31/2001DE19955602A1 Nichtflüchtige Halbleiter- Speicherzelle sowie Verfahren zu deren Herstellung A non-volatile semiconductor memory cell as well as processes for their preparation
05/31/2001DE19955537A1 Verfahren zur Herstellung eines Trägerelements für einen IC-Baustein A process for producing a carrier element for an IC module
05/31/2001DE19954866A1 Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt A method for treating a surface produced by epitaxy of a SiC Schottky semiconductor body and then produced
05/31/2001DE19953333A1 Arrangement for realizing a trenched layer with a dopant used in smart power technology comprises a counter compensation material compensating for lattice mismatches inserted into the trenched layer
05/31/2001DE19946493A1 Process for partially removing layers during semiconductor production e.g. planarizing comprises applying an auxiliary layer before applying the layer to be removed
05/31/2001DE19944474A1 Abschirmung äußerer Anregungen bei der Vermessung schwingungsfähiger Halbleitermembranen Shielding from external excitations in the measurement of oscillatory semiconductor membranes
05/31/2001DE10059016A1 Method for testing for holes in semiconductor component using charged particle beam
05/31/2001DE10057998A1 Polishing method involves inclining tool at defined angle in direction perpendicular to holding surface and in tool displacement direction, then in direction to reduce elastic deformation
05/31/2001DE10057079A1 Device for corpuscular beam exposure subjects pattern on specimen to corpuscular beam whilst feeding low pressure ozone into vacuum chamber at pressure below that of the atmosphere
05/31/2001DE10055636A1 Transparent conducting film having a specified thickness used in production of electrodes for controlling liquid crystals in display elements for computers comprises indium-tin oxide containing nitrogen and formed on substrate
05/31/2001DE10054595A1 Non-volatile ferroelectric storage cell comprises gate electrodes on an active region of a substrate, ferroelectric layers with electrodes and metallizations