Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2001
06/07/2001WO2001040124A1 Apparatus for providing ozonated process fluid and methods for using same
06/07/2001WO2001040087A1 Wafer transport system
06/07/2001WO2001040086A1 Wafer orienting and reading mechanism
06/07/2001WO2001040085A1 Small footprint carrier front end loader
06/07/2001WO2001039986A1 Thermal transfer of microstructured layers
06/07/2001WO2001033619A8 Gate dielectrics and method of making with binary non-crystaline analogs of silicon dioxide
06/07/2001WO2001024969A3 Fluid dispensing fixed abrasive polishing pad
06/07/2001WO2001012384A3 Apparatus for moving a workpiece
06/07/2001WO2001006546A3 Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
06/07/2001WO2001004927A3 Methodologies to reduce process sensitivity to the chamber wall condition
06/07/2001WO2000034796A8 Scanning single electron transistor microscope for imaging ambient temperature objects
06/07/2001US20010003196 Semiconductor integrated circuit having self-diagnosis test function and test method thereof
06/07/2001US20010003167 Device for engraving and inspecting a semiconductor wafer indentification mark
06/07/2001US20010003068 Coating substrate surface with coating solution containing as film-forming solute uniformly dissolved in an organic solvent a nitrogen-containing organic compound to form coating layer, drying coating layer by evaporating, baking
06/07/2001US20010003067 For supplying liquid chemicals serving as process liquids to objects to be processed such as semiconductor wafers or glass substrates for liquid crystal displays for wet cleaning
06/07/2001US20010003066 Etching back the oxide layer using a nitrogenous compound as a processing gas
06/07/2001US20010003065 Forming lower electrode by using gas including chlorine after step of forming hemispherical grained silicon seeds, removing seeds formed on insulation layer pattern through etching process using chlorine gas; increased surface, capacitance
06/07/2001US20010003064 Forming interconnect made of copper overlying a substrate, conducting pretreatment of the copper at 300 degrees C or less, forming dielectric film on copper by chemical vapor deposition
06/07/2001US20010003063 Depositing silicon layer into hole in interlevel dielectric of substrate, hole comprising sidewalls and floor, depositing cobalt seed layer onto silicon layer, electroplating supplemental cobalt layer, reacting to form cobalt silicide
06/07/2001US20010003062 Gate sidewall passivation to prevent abnormal tungsten polycide growth
06/07/2001US20010003061 Manufacture and cleaning of a semiconductor
06/07/2001US20010003060 Multilevel interconnecting structure in semiconductor device and method of forming the same
06/07/2001US20010003059 Ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer; portable telephones
06/07/2001US20010003058 Flip chip with integrated flux and underfill
06/07/2001US20010003056 Semiconductor device and method for fabricating the same
06/07/2001US20010003055 Fixing semiconductor chips respectively to carrier areas, semiconductor chips being fixed on thin portions of insulating board, covering semiconductor chips with resin layer, and separating resin layer and board into segments
06/07/2001US20010003054 Providing first and second chip regions on silicon wafer, wherein first resist pattern for semiconductor device is to be formed in first chip region, and second chip region includes a plurality of evaluation regions, determining data rate
06/07/2001US20010003052 Gate array and manufacturing method of semiconductor integrated circuit using gate array
06/07/2001US20010003051 Having logic circuit connected to external terminals, built-in memory connected to logic circuit, and burn-in test circuit for, when performing burn-in test, writing predetermined data into said built-in memory
06/07/2001US20010003050 Method of fabricating semiconductor device
06/07/2001US20010003049 Method and mold for manufacturing semiconductor device, semiconductor device, and method for mounting the device
06/07/2001US20010003048 Semiconductor device and manufacturing method thereof
06/07/2001US20010003047 Solid state image sensor with large photodiode-capacity and high sensitivity and causes no mixed colors and dark current in a small amount; first and second doping steps implantation ions are different or energies for doping are different
06/07/2001US20010003034 Forming a gate stack layer on a substrate, patterning the stack to define a gate and two spacers, one of the spacer and gate have specific width and gate has width that is twice the width of one space, forming source and drain regions
06/07/2001US20010003033 Method and apparatus for reducing non-uniformity area effects in the manufacture of semiconductor devices
06/07/2001US20010003030 Over-coating composition comprising an over-coating resin, a solvent, and a basic compound
06/07/2001US20010003027 Exposure method
06/07/2001US20010003019 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
06/07/2001US20010003015 Of titanium, by adding a flow of hydrogen and nitrogen to the reaction chamber; processor readable medium containing a program that causes the reactor chamber to passivate the titanium layer
06/07/2001US20010003014 Plasma CVD apparatus and plasma CVD method
06/07/2001US20010003013 Substrate heating apparatus, substrate heating method, semiconductor integrated circuit device, photomask and liquid crystal device
06/07/2001US20010003012 Using an apparatus comprising a support member with a slot to retain a sample wafer therein, and a handle attached to the support; for efficient staining of semiconductors for scanning electron microscopy analysis
06/07/2001US20010002948 Gas driven rotating susceptor for rapid thermal processing (rtp) system
06/07/2001US20010002883 Semiconductor device including a repetitive pattern
06/07/2001US20010002882 Semiconductor storage device
06/07/2001US20010002874 Ic card module, manufacturing method therefor, hybrid integrated circuit module, and manufacturing method thereof
06/07/2001US20010002871 Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
06/07/2001US20010002870 Power integrated circuit
06/07/2001US20010002847 Charge transfer device and method of driving the charge transfer device
06/07/2001US20010002795 Test chip for molding material including filler and method for evaluating the molding material
06/07/2001US20010002794 Split resistor probe and method
06/07/2001US20010002734 Selectively coating bond pads
06/07/2001US20010002733 Semiconductor device and method of manufacturing same
06/07/2001US20010002732 Substrate with at least two metal structures disposed thereon, and method for fabricating it
06/07/2001US20010002731 Etching mask, process for forming contact holes using same, and semiconductor device made by the process
06/07/2001US20010002730 Semiconductor device and manufacturing method thereof
06/07/2001US20010002727 Semiconductor device and module of the same
06/07/2001US20010002724 Semiconductor device and manufacturing method thereof
06/07/2001US20010002722 Methods of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs
06/07/2001US20010002720 Semiconductor device using a shallow trench isolation
06/07/2001US20010002719 Semiconductor device
06/07/2001US20010002718 Method for production of a memory cell arrangement
06/07/2001US20010002717 Protection device and protection method for semiconductor device
06/07/2001US20010002716 SOI device and method of isolation thereof
06/07/2001US20010002715 High performance, low power vertical integrated cmos devices
06/07/2001US20010002714 Method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates
06/07/2001US20010002713 Semiconductor device
06/07/2001US20010002712 Semiconductor memory with floating gate type fet
06/07/2001US20010002711 Reduced area storage node junction and fabrication process
06/07/2001US20010002710 Method of forming high aspect ratio structures for semiconductor devices
06/07/2001US20010002709 Process to produce ultrathin crystalline silicon nitride on Si (111 ) for advanced gate dielectrics
06/07/2001US20010002708 Ferroelectric capacitor and a method for manufacturing thereof
06/07/2001US20010002707 Apparatus and method for simulating MOSFET
06/07/2001US20010002705 Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configuration
06/07/2001US20010002704 Semiconductor device with high gettering capability to impurity present in semiconductor layer of soi substrate
06/07/2001US20010002702 Semiconductor device
06/07/2001US20010002700 Apparatus for optically checking a pattern and method of doing the same
06/07/2001US20010002697 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
06/07/2001US20010002668 Rapid thermal processing chamber for processing multiple wafers
06/07/2001US20010002663 Treating sample by contacting sample with a gas phase bromine trifluoride containing etchant to produce a desired etch depth in sample
06/07/2001US20010002650 Apparatus comprising sputter epitaxy, real-time pattern generation, and flash diffusion, for fabricating monocrystalline three-dimensional integrated circuits, with means for full automation
06/07/2001US20010002624 Tip structures.
06/07/2001US20010002613 Birm and gas escape for non-contact wafer holder
06/07/2001US20010002607 Forming a ball on a tip end of a wire that passes through a capillary, extending wire from a lower end of the capillary, forming a notch in between ball and capillary, bonding ball, raising capillary, pulling wire upward to cut it at the notch
06/07/2001US20010002601 Liner for use in processing chamber
06/07/2001US20010002593 Sonic nozzle is radially spaced from the edge of the thin disk, and so that the jet of sonicated liquid strikes the edge of the thin disk at an angle approximately between 30 and 50 degrees from tangent to the edge, scanning the disc
06/07/2001US20010002585 Introducing a substrate into a reaction chamber which has atleast one gas feed port and one gas exhaust port, heating the substrate to a film forming temperature while supplying a prescribed gas to reaction chamber to form a film
06/07/2001US20010002583 Useful for producing different patterns by shaping the pattern carrier in th form of endless pattern band and guiding the pattern carrier in revolving fashion by means of several deflection rollers
06/07/2001US20010002582 Showerhead diffuser with flexibility to adjust gas distribution flux in a number of different ways, allowing a diffuser to be dialed-in to account for many gas parameters such as reactivity
06/07/2001US20010002581 System for manufacturing a semiconductor device
06/07/2001US20010002573 Liquid raw material is deaerated and supplied from a container to a liquid flow control section by the pressure of first inert gas, inside a gas permeable fluoropolymer tube, passing second inert gas with low permeability than first
06/07/2001US20010002569 Apparatus for cutting adhesive tape mounted on semiconductor wafer
06/07/2001US20010002517 Vacuum processing apparatus and operating method therefor
06/07/2001US20010002510 Cavity-filling method for reducing surface topography and roughness
06/07/2001DE19958162A1 Verfahren zur Herstellung monolithisch integrierter Halbleiterbauelemente A process for preparing monolithically integrated semiconductor components
06/07/2001DE19958082A1 Überwachungssystem für eine Transportvorrichtung von Flachteilen, insbesondere Wafer-Scheiben Monitoring system for a transport device of flat parts, in particular wafer slices
06/07/2001DE19958054A1 Bit line formation of DRAM storage matrix comprises forming intermediate layer dielectric over storage matrix, etching dielectric to form trenches, and applying conducting material in trenches
06/07/2001DE19957533A1 Halbleiterschaltungsanordnung und Verfahren zur Herstellung A semiconductor circuit arrangement and methods for making
06/07/2001DE19957532A1 Halbleiterschaltungsanordnung und Verfahren zur Herstellung A semiconductor circuit arrangement and methods for making
06/07/2001DE19957303A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the