| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
|---|
| 07/26/2001 | US20010009261 Method and apparatus for lining up micro-balls |
| 07/26/2001 | US20010009255 System and method for rapid thermal processing |
| 07/26/2001 | US20010009251 Laser machining apparatus |
| 07/26/2001 | US20010009249 Patterning the anti-reflection(AR) layer, the metal layer and the glue barrier(G/B) layer to result in a sloped sidewall of the metal layer which has a larger top surface adjacent the AR layer and smaller bottom surface adjacent the G/B layer |
| 07/26/2001 | US20010009248 Metal etching process |
| 07/26/2001 | US20010009245 Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers |
| 07/26/2001 | US20010009222 Sputtering method for forming an aluminum or aluminum alloy fine wiring pattern |
| 07/26/2001 | US20010009220 Forming plasma in space facing substrate surface; imposing pulse voltage of lower frequency than the oscillation frequency of plasma ions on substrate causing thin film to be produced on substrate |
| 07/26/2001 | US20010009203 Multi-layer circuit board |
| 07/26/2001 | US20010009197 High performance chip packaging and method |
| 07/26/2001 | US20010009196 High performance chip packaging and method |
| 07/26/2001 | US20010009178 Method of holding substrate and substrate holding system |
| 07/26/2001 | US20010009177 Systems and methods for two-sided etch of a semiconductor substrate |
| 07/26/2001 | US20010009167 Semiconductor layers with low defect densities |
| 07/26/2001 | US20010009157 Apparatus for conveying a workpiece |
| 07/26/2001 | US20010009156 Cleaning method and apparatus |
| 07/26/2001 | US20010009154 Oxidation of surface with an oxygen plasma controlled by oxygen atmosphere, temperature, and radio frequency power levels, and removing the product as a vapor with hydrolyzed hexafluoroacetylacetonate; wafer chuck is not disassembled |
| 07/26/2001 | US20010009141 Susceptor designs for silicon carbide thin films |
| 07/26/2001 | US20010009140 Apparatus for fabrication of thin films |
| 07/26/2001 | US20010009138 Used in chemical vapor deposition tools for making semiconductors |
| 07/26/2001 | US20010009134 GaN system compound semiconductor and method for growing crystal thereof |
| 07/26/2001 | US20010009076 Substrate changing-over mechanism in a vaccum tank, comprising |
| 07/26/2001 | US20010009075 Vacuum processing apparatus and operating method therefor |
| 07/26/2001 | US20010009074 Vacuum processing apparatus and operating method therefor |
| 07/26/2001 | US20010009073 Vacuum processing apparatus and operating method therfor |
| 07/26/2001 | DE19963588A1 Optische Anordnung Optical arrangement |
| 07/26/2001 | DE19963500A1 Verfahren zum Herstellen einer strukturierten metalloxidhaltigen Schicht A method of manufacturing a structured metal-oxide layer |
| 07/26/2001 | DE19948570C2 Anordnung zur Verdrahtung von Leiterbahnen Arrangement for the wiring of traces |
| 07/26/2001 | DE19944144C2 Verfahren zur Herstellung von vergrabenen Kontakten und Leitbahnen in kristallinen Siliziumkarbid-Halbleitersubstraten A process for the production of the buried contacts and interconnects in crystalline silicon carbide semiconductor substrates |
| 07/26/2001 | DE10101766A1 Semiconductor element with a double damascene structure is formed in a dielectric layer structure comprising an upper layer with a first formation, an etch stop layer, and a lower layer with a second formation |
| 07/26/2001 | DE10101037A1 Semiconductor device has multilayer wiring structure buried in insulating layer, and at least one pad electrode connected to multilayer wiring and covered with protective layer |
| 07/26/2001 | DE10100695A1 Halbleitervorrichtung Semiconductor device |
| 07/26/2001 | DE10065350A1 Production of a semiconductor device used as a DRAM comprises a multiple step process to form a capacitor-dielectric layer which is covered by an upper electrode layer |
| 07/26/2001 | DE10065224A1 Production of a capacitor used in the production of semiconductor devices comprises using a multiple step process to form a dielectric layer and thin layers of amorphous tantalum oxynitride |
| 07/26/2001 | DE10064068A1 Production of a capacitor comprises forming an intermediate insulating layer on a semiconductor substrate, forming a lower electrode, depositing a thin layer, heating and/or calcining or tempering and forming an upper electrode |
| 07/26/2001 | DE10064002A1 Vielschicht-Dünnschichtstruktur, ferroelektrisches Dünnschichtelement und Verfahren zur Herstellung derselben Multilayer thin film structure, the ferroelectric thin-film element and process for producing same |
| 07/26/2001 | DE10051601A1 Semiconductor device with multi-layer interconnection structure has blind conductors and stops embedded in insulating layers of LSI circuits |
| 07/26/2001 | DE10051583A1 Production of a semiconductor device comprises forming an insulating film on a lower layer, selectively removing the insulating film until the lower layer is exposed, forming a metal film, and polishing |
| 07/26/2001 | DE10048646A1 Mask component used in electron beam lithography system, has electroconductive antioxidation layer which is formed on surface of base material with area irradiated by charged particle beam |
| 07/26/2001 | DE10039166A1 Semiconductor device used as a MOSFET comprises a semiconductor substrate, a gate insulating layer formed on the substrate, and a gate electrode formed on the substrate with the gate insulating layer in between |
| 07/26/2001 | DE10032219A1 Method for the manufacture of semiconductor device with capacitor above semiconductor device which forms one plate and terminal of capacitor in one step |
| 07/26/2001 | DE10014920C1 Production of a trench capacitor comprises filling a trench with a filler, forming an insulating collar, removing the filler, forming a trenched plate using low pressure gas phase doping, etc. |
| 07/26/2001 | DE10004578C1 Production of a semiconductor wafer comprises polishing the edges of the wafer with a cloth with the continuous introduction of an alkaline polishing agent using polishing plates, wetting with a film and cleaning and drying |
| 07/26/2001 | DE10002876A1 New aminosilylborylalkanes are useful as CVD-applied coatings for protecting metal, carbon or ceramic substrates against oxidation at high temperatures |
| 07/26/2001 | DE10002754A1 Semiconductor structural component for applying to a pre-structured semiconductor substrate applies a mask to a substrate with a distinctly reduced width at a definite point allowing epitaxial growth through MBE and MOVPE. |
| 07/26/2001 | DE10001852A1 Process for molding an electrical signal line between electrodes of an electrode pair used in the production of a neuronal switch comprises molding the signal electrochemically |
| 07/26/2001 | DE10001118A1 Production of a semiconductor component comprises forming a switching transistor on a substrate, applying a first insulating layer, applying a storage capacitor and a metal oxide-containing layer and applying a second insulating layer |
| 07/26/2001 | DE10000193A1 Optisches System Optical system |
| 07/26/2001 | DE10000191A1 Optical arrangement has optical element, projection light source and compensation light feed device coupled to optical element via peripheral surface of optical element |
| 07/26/2001 | CA2397760A1 Wafer bonding techniques to minimize built-in stress of silicon microstructures and micro-mirrors |
| 07/25/2001 | EP1119083A2 Narrow beam ArF excimer laser device |
| 07/25/2001 | EP1119057A2 Transparent electrode, patterning method for same, and manufacturing method for semiconductor element using same |
| 07/25/2001 | EP1119056A2 Semiconductor for device and method of fabrication |
| 07/25/2001 | EP1119053A2 Semiconductor, semiconductor device, and method for fabricating the same |
| 07/25/2001 | EP1119051A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119050A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119048A1 Clad plate for lead frames, lead frame using the same, and method of manufacturing the lead frame |
| 07/25/2001 | EP1119046A2 Wire bonding technique and architecture suitable for copper metallization in semiconductor structures |
| 07/25/2001 | EP1119045A2 Diamond interconnection substrate and a manufacturing method therefor |
| 07/25/2001 | EP1119044A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119043A2 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119042A2 Planar integrated circuit |
| 07/25/2001 | EP1119041A2 Method of manufacturing a wafer holder, and apparatus using the same |
| 07/25/2001 | EP1119040A2 Electrostatic wafer chuck |
| 07/25/2001 | EP1119039A1 Wafer storing method and storing container therefor and wafer transferring method for transferring wafer to the storing container |
| 07/25/2001 | EP1119038A2 Method of producing a semiconductor device |
| 07/25/2001 | EP1119037A2 Semiconductor device and method of manufacturing thereof |
| 07/25/2001 | EP1119036A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119035A2 Method for depositing a low dielectric constant film |
| 07/25/2001 | EP1119034A1 Method of plasma-assisted film deposition |
| 07/25/2001 | EP1119032A2 A method and an apparatus for producing a semiconductor device |
| 07/25/2001 | EP1119031A2 Process for producing a semiconductor wafer |
| 07/25/2001 | EP1119030A1 Plasma reactor |
| 07/25/2001 | EP1119029A2 Atomic layer epitaxy of compound semiconductor |
| 07/25/2001 | EP1119028A1 Apparatus for curing resist |
| 07/25/2001 | EP1119027A2 A capacitor for integration with copper damascene structure and manufacturing method |
| 07/25/2001 | EP1119026A2 Wafer holder for semiconductor manufacturing apparatus |
| 07/25/2001 | EP1119025A2 Wafer holder for semiconductor manufacturing apparatus |
| 07/25/2001 | EP1119024A2 Substrate processing chambers and methods of operation thereof |
| 07/25/2001 | EP1119023A2 Method of holding substrate and substrate holding system |
| 07/25/2001 | EP1119022A2 Vacuum processing apparatus and semiconductor manufacturing line using the same |
| 07/25/2001 | EP1119017A2 Vault shaped target and high-field magnetron |
| 07/25/2001 | EP1119016A2 Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| 07/25/2001 | EP1118954A1 Semiconductor computing unit |
| 07/25/2001 | EP1118928A1 Circuit for controlling the power consumption of an integrated circuit |
| 07/25/2001 | EP1118867A1 Method for testing a CMOS integrated circuit |
| 07/25/2001 | EP1118835A1 Clearance measuring device and method for exposure |
| 07/25/2001 | EP1118697A2 Low defect density, vacancy dominated silicon |
| 07/25/2001 | EP1118696A1 Method for plating substrate and apparatus |
| 07/25/2001 | EP1118693A2 Suspended gas distribution manifold for plasma chamber |
| 07/25/2001 | EP1118692A1 Remote plasma apparatus |
| 07/25/2001 | EP1118691A1 Reactor with remote plasma system and method of processing a semiconductor substrate |
| 07/25/2001 | EP1118432A2 Substrate polishing pad |
| 07/25/2001 | EP1118431A2 Method and apparatus for detecting polishing endpoint with optical monitoring |
| 07/25/2001 | EP1118425A2 Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| 07/25/2001 | EP1118390A2 Coating method and coating apparatus |
| 07/25/2001 | EP1118259A1 Assembly device |
| 07/25/2001 | EP1118125A1 Lateral thin-film silicon-on-insulator (soi) device having a gate electrode and a field plate electrode |
| 07/25/2001 | EP1118124A1 Bipolar transistor and method for producing same |
| 07/25/2001 | EP1118122A1 Integrated circuit and method for producing the same |