Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2002
03/26/2002US6362048 Method of manufacturing floating gate of flash memory
03/26/2002US6362047 Method of manufacturing EEPROM memory points
03/26/2002US6362046 Semiconductor device allowing electrical writing and erasing of information and method of manufacturing the same
03/26/2002US6362045 Tunneling dielectric layer is grown on semiconductor substrate, polysilicon layer is deposited, nitrogen is implanted; patterning to form floating gates, depositing silicon oxide nitride layers; depositing conductive layer
03/26/2002US6362044 Removing a spontaneous oxidation film adhering to an amorphous silicon surface of a semiconductor substrate, heating amorphous silicon, spraying silane to form an amorphous silicon/polysicon mixed-phase active layer; annelaing
03/26/2002US6362043 Method for coupling to semiconductor device in an integrated circuit having edge-defined, sub-lithographic conductors
03/26/2002US6362042 DRAM having a cup-shaped storage node electrode recessed within an insulating layer
03/26/2002US6362041 Method and structure for stacked DRAM capacitors and FETs for embedded DRAM circuits
03/26/2002US6362040 Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates
03/26/2002US6362039 Self-aligned resistor and local interconnect
03/26/2002US6362038 Low and high voltage CMOS devices and process for fabricating same
03/26/2002US6362037 Semiconductor device and method of fabricating same
03/26/2002US6362036 VDMOS transistor protected against over-voltages between source and gate
03/26/2002US6362035 Channel stop ion implantation method for CMOS integrated circuits
03/26/2002US6362034 Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric field
03/26/2002US6362033 Self-aligned LDD formation with one-step implantation for transistor formation
03/26/2002US6362032 Method for manufacturing fringe field switching mode liquid crystal display
03/26/2002US6362031 Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same
03/26/2002US6362027 Semiconductor device, active matrix substrate, method of manufacturing the semiconductor device and method of manufacturing the active matrix substrate
03/26/2002US6362026 Edge termination for silicon power devices
03/26/2002US6362025 Method of manufacturing a vertical-channel MOSFET
03/26/2002US6362024 Semiconductor memory device manufacturing method with fuse cutting performance improved
03/26/2002US6362021 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
03/26/2002US6362014 Bonding apparatus
03/26/2002US6362013 Semiconductor inspection apparatus and method of specifying attributes of dies on wafer in semiconductor inspection apparatus
03/26/2002US6362012 Base layer of dielectric is deposited over the surface of a semiconductor substrate, dielectric is deposited over the surface of substrate, contact plugs are provided, multiple layers of dielectric are deposited; vias are provided
03/26/2002US6361927 Coating an sog solution on a glass substrate by spin coating method; heat-treating sog thin film to form silicon oxide layer; coating photoresist layer, exposure; developing exposed photoresist layer and wet etching silicon oxide layer
03/26/2002US6361912 Electrostatic printing of a metallic toner applied to solid phase crystallization and silicidation
03/26/2002US6361907 Exposing method in which different kinds of aligning and exposing apparatuses are used
03/26/2002US6361903 Method for predicting pattern width on semiconductor wafer and method for correcting mask pattern therethrough
03/26/2002US6361880 CVD/PVD/CVD/PVD fill process
03/26/2002US6361874 Manufacture of integrated circuits
03/26/2002US6361857 Heat exchangers with substrates, sintering compacts of copper and tungsten, thin diamond film layer on substrate with copper and x-ray diffraction
03/26/2002US6361837 Film on semiconductor substrates
03/26/2002US6361834 Resist film baking method
03/26/2002US6361831 Paste application method for die bonding
03/26/2002US6361820 Dielectric films from organohydridosiloxane resins with high organic content
03/26/2002US6361712 Comprised of water, hydroxylammonium salt, carboxylic acid, fluorine-containing compounds, and base; removes residues left after chemical-mechanical polishing and etching
03/26/2002US6361708 Method and apparatus for polishing a metal film
03/26/2002US6361707 Apparatus and methods for upgraded substrate processing system with microwave plasma source
03/26/2002US6361706 Abatement using water vapor; improved safety; reduced perfluorocarbon emissions
03/26/2002US6361705 Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
03/26/2002US6361704 Self stop aluminum pad for copper process
03/26/2002US6361675 Method of manufacturing a semiconductor component and plating tool therefor
03/26/2002US6361669 Apparatus and method for plating wafers, substrates and other articles
03/26/2002US6361668 Sputtering installation with two longitudinally placed magnetrons
03/26/2002US6361667 Ionization sputtering apparatus
03/26/2002US6361662 Method for fabricating a semiconductor device in a magnetron sputtering system
03/26/2002US6361648 Wafer transfer station for a chemical mechanical polisher
03/26/2002US6361647 Method and apparatus for chemical mechanical polishing
03/26/2002US6361646 Method and apparatus for endpoint detection for chemical mechanical polishing
03/26/2002US6361645 Method and device for compensating wafer bias in a plasma processing chamber
03/26/2002US6361644 Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
03/26/2002US6361627 Process of controlling grain growth in metal films
03/26/2002US6361619 Thermally annealed wafers having improved internal gettering
03/26/2002US6361614 Eliminates light-induced galvanic corrosion in semiconductor wafers and integrated circuit devices during cleaning and drying
03/26/2002US6361611 Using alkaline water-based solution; forming alumina-silica
03/26/2002US6361607 Apparatus for controlling polymerized teos build-up in vacuum pump lines
03/26/2002US6361600 Film forming apparatus and film forming method
03/26/2002US6361599 Mechanism for dispensing liquid onto an integrated circuit wafer with minimized back-splash
03/26/2002US6361422 Method and apparatus for transferring semiconductor substrates using an input module
03/26/2002US6361420 Method of chemical mechanical polishing with edge control
03/26/2002US6361419 Carrier head with controllable edge pressure
03/26/2002US6361418 Abrasive system
03/26/2002US6361415 Employing an acidic liquid and an abrasive surface to polish a semiconductor topography
03/26/2002US6361409 Polymeric polishing pad having improved surface layer and method of making same
03/26/2002US6361407 Method of polishing a semiconductor wafer
03/26/2002US6361406 Abrasion method of semiconductor device
03/26/2002US6361404 Precision cutting apparatus and cutting method using the same
03/26/2002US6361402 Method for planarizing photoresist
03/26/2002US6361313 Ladder boat for supporting wafers
03/26/2002US6361268 Frictionless transport apparatus and method
03/26/2002US6360940 Method and apparatus for removing known good die
03/26/2002US6360938 Process and apparatus to remove closely spaced chips on a multi-chip module
03/26/2002US6360762 Method for feeding gases for use in semiconductor manufacturing
03/26/2002US6360756 Wafer rinse tank for metal etching and method for using
03/26/2002US6360754 Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber
03/26/2002US6360737 Annular saw and method of protecting the clamping edge and of cleaning the saw blade of an annular saw
03/26/2002US6360687 Wafer flattening system
03/26/2002US6360686 Plasma reactor with a deposition shield
03/26/2002US6360685 Sub-atmospheric chemical vapor deposition system with dopant bypass
03/26/2002US6360562 Methods for producing glass powders
03/26/2002CA2243832C Cryogenic rectification system for recovery of fluorine compounds
03/26/2002CA2242802C Mounting structure for one or more semiconductor devices
03/26/2002CA2198552C Fabrication process of semiconductor substrate
03/21/2002WO2002023964A1 Processing chamber with multi-layer brazed lid
03/21/2002WO2002023845A2 Method for improving image quality and for increasing writing speed during exposure of light-sensitive layers
03/21/2002WO2002023674A2 Thick film millimeter wave transceiver module
03/21/2002WO2002023639A1 Photovoltaic component and module
03/21/2002WO2002023636A1 Semiconductor memory cell comprising a trench capacitor and a select transistor and a method for the production thereof
03/21/2002WO2002023635A1 Ferroelectric memory device and its manufacturing method, and hybrid device
03/21/2002WO2002023631A2 Direct build-up layer on an encapsulated die package having a moisture barrier structure
03/21/2002WO2002023630A2 Micromachined silicon block vias for transferring electrical signals to the backside of a silicon wafer
03/21/2002WO2002023629A2 Electronic device manufacture
03/21/2002WO2002023627A1 Semiconductor interconnection structure and method of fabrication
03/21/2002WO2002023626A1 Improved semiconductor structure and method of fabrication
03/21/2002WO2002023625A2 Semiconductor device and fabrication method therefor
03/21/2002WO2002023624A2 Field effect transistor and method of fabrication
03/21/2002WO2002023623A1 Alignment apparatus
03/21/2002WO2002023621A2 Method and apparatus for fast automated failure classification for semiconductor wafers