Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2002
03/28/2002WO2002025334A1 Isolation device between optically conductive areas
03/28/2002WO2002025292A2 Manipulator for a test head with active compliance
03/28/2002WO2002024985A1 Gas inlet mechanism for cvd-method and device
03/28/2002WO2002024983A2 Integrated phase separator for ultra high vacuum system
03/28/2002WO2002024982A1 Method for producing crystal thin plate and solar cell comprising crystal thin plate
03/28/2002WO2002024972A1 Deposition of thin films by laser ablation
03/28/2002WO2002024788A1 Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same
03/28/2002WO2002024410A1 Cmp apparatus and methods to control the tilt of the carrier head, the retaining ring and the pad conditioner
03/28/2002WO2002024409A1 Polishing apparatus with electromagnetical attitude controller for the polishing pad carrier
03/28/2002WO2002024391A1 Polymer collar for solder bumps
03/28/2002WO2002024316A1 System for forming aerosols and cooling device incorporated therein
03/28/2002WO2002015283A3 Metal sulfide-oxide semiconductor transistor devices
03/28/2002WO2002006555A3 Sputtering target
03/28/2002WO2002005331A8 Removable gripper pads
03/28/2002WO2002004134A8 Thermal processing system and methods for forming low-k dielectric films suitable for incorporation into microelectronic devices
03/28/2002WO2001099185A3 Integrated circuit vertical trench device and method of forming thereof
03/28/2002WO2001099177A3 Trench mosfet with double-diffused body profile
03/28/2002WO2001099174A3 METHOD TO ETCH POLY Si GATE STACKS ON RAISED STI STRUCTURE
03/28/2002WO2001095391A8 Self-limiting polysilicon buffered locos for dram trench capacitor collar
03/28/2002WO2001095371A3 Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch
03/28/2002WO2001091981A9 Wire saw and process for slicing multiple semiconductor ingots
03/28/2002WO2001091204A3 Displacement device
03/28/2002WO2001091185A3 Ultra-late programming rom and method of manufacture
03/28/2002WO2001088969A3 Improved capacitor electrodes
03/28/2002WO2001088966A3 Method of adjusting the thickness of an electrode in a plasma processing system
03/28/2002WO2001088954A3 Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
03/28/2002WO2001087541A3 Pneumatic diaphragm head having an independent retaining ring and multi-region pressure control, and method to use the same
03/28/2002WO2001086352A3 Polymers for photoresist compositions for microlithography
03/28/2002WO2001084570A3 Magnetic element with insulating veils and fabricating method thereof
03/28/2002WO2001083163A3 Method of polishing and cleaning glass
03/28/2002WO2001081490A3 Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
03/28/2002WO2001080315A3 Shaped springs and methods of fabricating and using shaped springs
03/28/2002WO2001074050A3 System and method for picture-in-browser scaling
03/28/2002WO2001065317A3 Method for evaluation of reticle image using aerial image simulator
03/28/2002WO2001060242A3 Test structure for metal cmp process control
03/28/2002WO2001039248A8 Contact for a trench capacitor of a dram cell arrangement
03/28/2002WO2001037047A3 Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography
03/28/2002WO2001005726A3 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES
03/28/2002WO2000057127A9 Method and apparatus for wafer metrology
03/28/2002WO2000049198A9 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
03/28/2002US20020038445 Method and program for processing design pattern of semiconductor intergrated circuit
03/28/2002US20020038402 Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same
03/28/2002US20020038204 Method of designing clock wiring
03/28/2002US20020038196 Database interpolation method for optical measurement of diffractive microstructures
03/28/2002US20020038164 Substrate processing method and apparatus
03/28/2002US20020037820 Compositions for cleaning organic and plasma etched residues for semiconductor devices
03/28/2002US20020037819 Removal polymer residues; mixture of water, alcohol and water soluble amines in solvent
03/28/2002US20020037756 Battery-operated wireless-communication apparatus and method
03/28/2002US20020037692 Clogging-free drain system installed in a cutting apparatus
03/28/2002US20020037685 Polishing apparatus and polishing method
03/28/2002US20020037684 Dry chemical-mechanical polishing method
03/28/2002US20020037680 Polishing apparatus and method with constant polishing pressure
03/28/2002US20020037657 Spiral contactor and manufacturing method for this apparatus, and a semiconductor inspecting equipment and electronical parts using this apparatus
03/28/2002US20020037655 Method for manufacturing semiconductor device having low dielectric constant insulating film, wafer processing equipment and wafer storing box used in this method
03/28/2002US20020037654 Laser annealing glass dielectric
03/28/2002US20020037653 Chamber having improved gas energizer and method
03/28/2002US20020037652 Semiconductor device manufacturing apparatus and method for manufacturing a semiconductor device
03/28/2002US20020037651 Method for minimizing damage of process charging phenomena
03/28/2002US20020037650 Semiconductor wafer and method for fabrication thereof
03/28/2002US20020037649 Method for carrying out planarization processing
03/28/2002US20020037648 Etching method
03/28/2002US20020037647 Heating; plasma etching
03/28/2002US20020037646 Liquid crystal display and method
03/28/2002US20020037645 Method and apparatus for processing substrates and method for manufacturing a semiconductor device
03/28/2002US20020037644 Method for forming tungsten bit line and devices including the same
03/28/2002US20020037643 Semiconductor device with fuse to be blown with energy beam and method of manufacturing the semiconductor device
03/28/2002US20020037642 Process for forming a metal interconnect
03/28/2002US20020037641 Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device
03/28/2002US20020037640 Method of fabricating EEPROM having tunnel window area
03/28/2002US20020037639 Method for farbricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type
03/28/2002US20020037638 Semiconductor device and method for forming the same
03/28/2002US20020037637 Using a carbon film as an etch hardmask for hard-to-etch materials
03/28/2002US20020037636 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation
03/28/2002US20020037635 Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
03/28/2002US20020037634 Process and apparatus for forming semiconductor thin film
03/28/2002US20020037632 Semiconductor device manufacturing method
03/28/2002US20020037631 Method for manufacturing semiconductor devices
03/28/2002US20020037630 Surface-area-enhanced ruthenium electrically conductive layer that has improved compatibility with high-dielectric constant dielectric materials; heating ruthenium oxide
03/28/2002US20020037629 Chemical mechanical polishing for forming a shallow trench isolation structure
03/28/2002US20020037628 Method for uniform polish in microelectronic device
03/28/2002US20020037627 Extension of shallow trench isolation by ion implantation
03/28/2002US20020037626 Process for producing trench insulation in a substrate
03/28/2002US20020037624 Capacitor and method for fabricating semiconductor device
03/28/2002US20020037623 Method for fabricating an integrated circuit capacitor
03/28/2002US20020037622 Method of forming a contact in an integrated circuit
03/28/2002US20020037621 Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same
03/28/2002US20020037620 Semiconductor device and method for fabricating the same
03/28/2002US20020037619 Semiconductor device and method of producing the same
03/28/2002US20020037618 Semiconductor device and method of manufacturing the same
03/28/2002US20020037617 Method for forming gate electrodes in a semicoductor device using formed fine patterns
03/28/2002US20020037616 Method of fabricating semiconductor device having element isolation trench
03/28/2002US20020037615 With a gate insulation film of hafnium oxide formed as a high dielectric constant insulator over the entire structure
03/28/2002US20020037613 Method of forming field effect transistors and related field effect transistor constructions
03/28/2002US20020037612 Semiconductor device and method for fabricating the same
03/28/2002US20020037611 Contact hole for exposing an active region of a substrate is self-aligned and ions are locally implanted only on a channel region
03/28/2002US20020037610 MOS structure and method for fabricating the structure
03/28/2002US20020037609 Crystallizing a semiconductor film in oxygen and then hydrogen atmospheres in the presence of a nickel catalyst
03/28/2002US20020037608 Method of manufacturing SOI element having body contact
03/28/2002US20020037607 Body-to-substrate contact structure for SOI device and method for fabricating same
03/28/2002US20020037605 Fixing to a holding frame with a smaller thermal expansion coefficient than 10 ppm/degrees C