Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2002
06/20/2002WO2002049076A2 Semiconductor device layout
06/20/2002WO2002049066A1 Charged particle beam microscope, charged particle beam application device, charged particle beam microscopic method, charged particle beam inspecting method, and electron microscope
06/20/2002WO2002049035A2 Memory device and method for the operation of the same
06/20/2002WO2002048980A1 Process for the manufacture of novel, inexpensive radio frequency identification devices
06/20/2002WO2002048798A1 Self-compensating mark arangement for stepper alignment
06/20/2002WO2002048796A2 Projection system for euv lithography
06/20/2002WO2002048668A2 Integrated cmos capacitive pressure sensor
06/20/2002WO2002048487A1 Latch hub assembly
06/20/2002WO2002048434A2 Gallium nitride materials and methods for forming layers thereof
06/20/2002WO2002048432A2 Method for patterning metal using nanoparticle containing precursors
06/20/2002WO2002048427A1 Thin film forming method and thin film forming device
06/20/2002WO2002048425A2 Method and system for icosaborane implantation
06/20/2002WO2002047871A1 Substrate transfer method
06/20/2002WO2002047870A1 Arrangement and method for mounting a backing film to a polish head
06/20/2002WO2002047863A1 Laser machining of semiconductor materials
06/20/2002WO2002029911A3 Tunelling magnetoresistance (tmr) material having ultra-thin magnetic layer
06/20/2002WO2002025725A3 Semiconductor device and process for forming the same
06/20/2002WO2002024983A3 Integrated phase separator for ultra high vacuum system
06/20/2002WO2002021693A8 Field programmable gate array and microcontroller system-on-a-chip
06/20/2002WO2002015650A3 Externally excited torroidal plasma source
06/20/2002WO2002011191A3 Near critical and supercritical ozone substrate treatment and apparatus for same
06/20/2002WO2002009157A3 Alkali earth metal oxide gate insulators
06/20/2002WO2002007926A8 Method and apparatus for removing minute particles from a surface
06/20/2002WO2002006899A3 Method for characterizing optical systems using holographic reticles
06/20/2002WO2002006568A3 Slicing of single-crystal films using ion implantation
06/20/2002WO2002006555A9 Sputtering target
06/20/2002WO2002005330A3 Door assembly for sealing an opening of a chamber
06/20/2002WO2002005329A3 Chemical vapor deposition of barrier layers
06/20/2002WO2002005323A3 Thermally processing a substrate
06/20/2002WO2002005319A3 Component source interchange gantry
06/20/2002WO2002005308A3 A plasma reactor having a symmetric parallel conductor coil antenna
06/20/2002WO2002001634A3 System support for semiconductor chips and electronic components and method for producing a system support and electronic components
06/20/2002WO2001095374A3 Slip resistant horizontal semiconductor wafer boat
06/20/2002WO2001093316A3 Apparatus and method for spinning a work piece
06/20/2002WO2001092135A8 Shock resistant variable load tolerant wafer shipper
06/20/2002WO2001088975A3 Method for producing a component
06/20/2002WO2001086361A3 Method and system for self-replicating manufacturing stations
06/20/2002WO2001082362A3 Process for forming electrical/mechanical connections
06/20/2002WO2001080309A3 A method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
06/20/2002WO2001069642A3 Plasma deposition method and system
06/20/2002WO2001065601A3 Device for packing electronic components using injection moulding technology
06/20/2002WO2001045141A8 Method and apparatus for smoothing thin conductive films by gas cluster ion beam
06/20/2002WO2001041183A9 Dose monitor for plasma doping system
06/20/2002WO2000067074A9 Streamlined ic mask layout optical and process correction through correction reuse
06/20/2002WO2000054935A9 Method and apparatus for endpoint detection for chemical mechanical polishing
06/20/2002WO2000051168A9 Slurry delivery control apparatus and method
06/20/2002US20020078430 Manufacturing method of semiconductor device
06/20/2002US20020078429 Design method for control system, control system, adjustment method for control system, exposure method, and exposure apparatus
06/20/2002US20020077799 Delay time estimation method and recording medium storing estimation program
06/20/2002US20020077798 Circuit simulation method and system
06/20/2002US20020077719 Variable parameter controls for semiconductor processes
06/20/2002US20020077493 Novel onium salts, photoacid generators, resist compositions, and patterning process
06/20/2002US20020077426 For forming resist layer in the manufacture of semiconductor devices; comprises acrylic resin and triazine compound to serve as crosslinking agent
06/20/2002US20020077421 Adherent to the surface of silicon flip chips, especially polyimide resins and nitride films; shock resistance
06/20/2002US20020077260 Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film
06/20/2002US20020077259 Stabilized alkaline compositions for cleaning microlelectronic substrates
06/20/2002US20020077244 Photolithography methods and systems
06/20/2002US20020077050 Clamp for connecting/disconnecting a rotary head to/from a spindle in apparatus for manufacturing a semiconductor device
06/20/2002US20020077045 Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
06/20/2002US20020077039 Process for the surface polishing of silicon wafers
06/20/2002US20020077037 Fixed abrasive articles
06/20/2002US20020077035 Ion exchange materials for chemical mechanical polishing
06/20/2002US20020077034 Substrate polishing article
06/20/2002US20020076971 Contact structure and production method thereof
06/20/2002US20020076947 Combined gate cap or digit line and spacer deposition using HDP
06/20/2002US20020076946 Method for forming Ta2O5 dielectric layer
06/20/2002US20020076945 6613627 not granted per O.G. errata of 11-4-03
06/20/2002US20020076944 Applying on semiconductor or integrated circuit surface substituted organosilane compound precursor, wherein precursor reacts with and deposits on surface and dielectric film
06/20/2002US20020076943 Method for evenly coating semiconductor laser end faces and frame used in the method
06/20/2002US20020076941 Semiconductor integrated circuit having reduced cross-talk noise
06/20/2002US20020076940 Manufacture of composite oxide film and magnetic tunneling junction element having thin composite oxide film
06/20/2002US20020076938 Methods of forming dielectric materials, methods of forming capacitors, and capacitor constructions
06/20/2002US20020076937 Pattern formation method
06/20/2002US20020076936 Method of fabricating semiconductor integrated circuit device and the semiconductor integrated circuit device
06/20/2002US20020076935 Plasma etching polymeric insulating layer in a reaction chamber containing a gaseous mixture of oxygen and an inert gas in a predermined ratio to avoid spontaneous etching
06/20/2002US20020076934 Method of removaling photoresistance
06/20/2002US20020076933 Processing method, measuring method and producing method of semiconductor devices
06/20/2002US20020076932 Method of polishing or planarizing a substrate
06/20/2002US20020076931 Method and system for reducing ARC layer removal during removal of photoresist
06/20/2002US20020076930 Etchant and method for fabricating a substrate for an electronic device using the same
06/20/2002US20020076929 Forming a seed layer over a semiconductor body; performing a plasma treatment using a hydrogen-containing chemistry on the seed layer to remove organic impurities, then electrochemically depositing copper layer on the seed layer
06/20/2002US20020076928 Method for making a semiconductor device having copper conductive layers
06/20/2002US20020076925 Plating a layer of copper over a substrate, forming a dopant layer over the copper layer, driving dopants from the dopant layer into the copper layer and removing the dopant layer
06/20/2002US20020076924 Method for forming an electrical interconnection providing improved surface morphololgy of tungsten
06/20/2002US20020076923 Controlled anneal conductors for integrated circuit interconnects
06/20/2002US20020076922 Method of manufacturing a metal wiring in a semiconductor device
06/20/2002US20020076921 Method of manufacturing a semiconductor device
06/20/2002US20020076920 Method of fabricating isolation structure for semiconductor device
06/20/2002US20020076918 Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization
06/20/2002US20020076917 Dual damascene interconnect structure using low stress flourosilicate insulator with copper conductors
06/20/2002US20020076916 Semiconductor device, and method of manufacturing the same
06/20/2002US20020076915 Wafer trench article and process
06/20/2002US20020076913 Semiconductor device resistant to soft errors and a method for manufacturing the semiconductor device
06/20/2002US20020076912 Method form producing micro bump
06/20/2002US20020076911 Semiconductor chip assembly with bumped molded substrate
06/20/2002US20020076910 High density electronic interconnection
06/20/2002US20020076909 Semiconductor device manufacturing method, electronic parts mounting method and heating/melting process equipment
06/20/2002US20020076908 Semiconductor device manufacturing method having a step of forming a post terminal on a wiring by electroless plating
06/20/2002US20020076907 Transistor having a silicided gate and method of forming
06/20/2002US20020076906 Semiconductor structure including a monocrystalline film, device including the structure, and methods of forming the structure and device