Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
06/2002
06/27/2002WO2002004774A3 Automatic door opener
06/27/2002WO2002003474A3 N-type nitride semiconductor laminate and semiconductor device using same
06/27/2002WO2002003454B1 Method for etching dual damascene structures in organosilicate glass
06/27/2002WO2001099184A3 Dual damascene process utilizing a low-k dual dielectric
06/27/2002WO2001098016A3 Laser system for processing target material
06/27/2002WO2001096883A3 Microcontactor probe and electric probe unit
06/27/2002WO2001096840A3 High sensitivity optical inspection system and method for detecting flaws on a diffractive surface
06/27/2002WO2001095376A3 Methods for forming rough ruthenium-containing layers and structures/methods using same
06/27/2002WO2001093323A3 Method of removing rie lag in a deep trench silicon etching step
06/27/2002WO2001075617A3 Plug and play sensor integration for a process module
06/27/2002WO2001073814A3 Method and apparatus for controlling power delivered to a multiple segment electrode
06/27/2002WO2001071884A3 Integrated circuit having various operational modes
06/27/2002WO2001067490A3 Single tunnel gate oxidation process for fabricating nand flash memory
06/27/2002WO2001047117A9 High sheet mos resistor method and apparatus
06/27/2002WO2000068979A9 An apparatus for sensing temperature on a substrate in an integrated circuit fabrication tool
06/27/2002WO2000063963A9 Non-abrasive conditioning for polishing pads
06/27/2002WO2000059008A9 Method and apparatus for forming an electrical contact with a semiconductor substrate
06/27/2002WO2000036634A3 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor
06/27/2002US20020083409 Process and device for in-situ decontamination of a EUV lithography device
06/27/2002US20020083408 Generating mask layout data for simulation of lithographic processes
06/27/2002US20020083407 Semiconductor integrated circuit device, circuit design apparatus, and circuit design method
06/27/2002US20020083406 Hybrid semi-physical and data fitting HEMT modeling approach for large signal and non-linear microwave/millimeter wave circuit CAD
06/27/2002US20020083405 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
06/27/2002US20020083404 Semiconductor device, semiconductor device design method, semiconductor device design method recording medium, and semiconductor device design support system
06/27/2002US20020083403 Method of verifying designed circuits
06/27/2002US20020083402 Method and system for simulating integrated circuit designs
06/27/2002US20020083401 Method for efficient manufacturing of integrated circuits
06/27/2002US20020083398 Circuit designing apparatus, circuit designing method and timing distribution apparatus
06/27/2002US20020083389 Testing integrated circuits
06/27/2002US20020083384 System for optimizing anti-fuse repair time using fuse ID
06/27/2002US20020083330 LSI design method and verification method
06/27/2002US20020082801 Shape measuring method, shape measuring unit, exposure method, exposure apparatus and device manufacturing method
06/27/2002US20020082789 Calibration plate having accurately defined calibration pattern
06/27/2002US20020082744 Vacuum processing apparatus and semiconductor manufacturing line using the same
06/27/2002US20020082624 A device with thin spacers to improve salicide resistance on polysilicon gates
06/27/2002US20020082337 Carrier reel, carriage method using the carrier reel, and method for manufacturing electronic device
06/27/2002US20020082172 Accurate etching of an strontium titanate single crystal substrate by forming a patterned silica protective film and etching with phosphoric acid; superconducting quantum interfers; magnetic/electric field sensors; microscope probes
06/27/2002US20020082157 Synthetic silica glass member, photolithography apparatus and process for producing photolithography apparatus
06/27/2002US20020081962 Clean room and method for fabricating semiconductor device
06/27/2002US20020081955 Wafer polishing apparatus
06/27/2002US20020081949 Polishing composition
06/27/2002US20020081947 Platen design for improving edge performance in CMP applications
06/27/2002US20020081946 Base-pad for a polishing pad
06/27/2002US20020081943 Semiconductor substrate and lithographic mask processing
06/27/2002US20020081942 Method and apparatus for monitoring a semiconductor wafer during a spin drying operation
06/27/2002US20020081865 Two slurries of silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent with differing removal rates on copper, the barrier and dielectric material
06/27/2002US20020081864 Dichlorosilane and ammonia gases are deposit on a silicon substrate and exposing the surface to silicon tetrachloride and a nitrogen containing gas for a second layer of thickness
06/27/2002US20020081863 Method of manufacturing semiconductor device
06/27/2002US20020081862 Ultra-thin SiO2 using N2O as the oxidant
06/27/2002US20020081861 Silicon-germanium-carbon compositions and processes thereof
06/27/2002US20020081860 Method for manufacturing semiconductor wafer having resist mask with measurement marks for measuring the accuracy of overlay of a photomask
06/27/2002US20020081859 Post-cleaning method of a via etching process
06/27/2002US20020081858 Process for manufacturing a semiconductor device
06/27/2002US20020081857 Etching method for ZnSe polycrystalline substrate
06/27/2002US20020081856 Reducing the oxidized interface with a hydrogen containing plasma and introducing second-layer-forming compounds
06/27/2002US20020081855 Removing the nitrogen source that causes an interaction between organo silicate glass and the photoresist
06/27/2002US20020081854 Method for making a dual damascene interconnect using a multilayer hard mask
06/27/2002US20020081853 Abrasive slurry and process for a chemical-mechanical polishing of a precious-metal surface
06/27/2002US20020081852 A second oxide is annealed in a boron-containing atmosphere, and a first oxide prevents boron diffusion from the second oxide into the gate and substrate
06/27/2002US20020081851 Method of forming nonvolatile memory device utilizing a hard mask
06/27/2002US20020081850 Method of fabricating a semiconductor device
06/27/2002US20020081849 Chemical mechanical polishing compositions for CMP removal of iridium thin films
06/27/2002US20020081848 Fabrication method of nanocrystals using a focused-ion beam
06/27/2002US20020081847 Etchant is hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt; for liquid crystal display devices having copper lines
06/27/2002US20020081846 Semiconductor device
06/27/2002US20020081845 Method for the formation of diffusion barrier
06/27/2002US20020081844 Method of manufacturing a barrier metal layer using atomic layer deposition
06/27/2002US20020081843 Semicoductor device and method of manufacturing of the same
06/27/2002US20020081842 Electroless metal liner formation methods
06/27/2002US20020081841 Method of making a contact structure
06/27/2002US20020081840 Method of manufacturing a semiconductor device including dual-damascene process
06/27/2002US20020081839 Copper-based wiring layer contains sulfur at given atomic percent; preventing film peeling due to the difference in coefficient of thermal expansion
06/27/2002US20020081838 Interposer and method of making same
06/27/2002US20020081837 Method for fabricating metal conductors and multi-level interconnects in a semiconductor device
06/27/2002US20020081836 Contact structure, semiconductor device and manufacturing method thereof
06/27/2002US20020081835 Method for fabricating a semiconductor device
06/27/2002US20020081834 Method for eliminating reaction between photoresist and OSG
06/27/2002US20020081833 Patterning three dimensional structures
06/27/2002US20020081832 Intralevel decoupling capacitor, method of manufacture and testing circuit of the same
06/27/2002US20020081831 Method of manufacturing semiconductor device
06/27/2002US20020081830 Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device
06/27/2002US20020081829 Integrated circuit mounting structure and mounting method thereof
06/27/2002US20020081827 Process for fabricating semiconductor device having silicide layer with low resistance and uniform profile and sputtering system used therein
06/27/2002US20020081826 Annealing of high-K dielectric materials
06/27/2002US20020081825 Method for reproducibly forming a predetermined quantum dot structure and device produced using same
06/27/2002US20020081824 Implantation process using sub-stoichiometric, oxygen doses at different energies
06/27/2002US20020081823 Generic layer transfer methodology by controlled cleavage process
06/27/2002US20020081822 Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method
06/27/2002US20020081820 Lead zirconate titanate dielectric situated between elec-trodes; hardmasking with refractory nitride; removing portion of hardmask and ferroelectric material using chlorine, oxygen and fluorine bearing compounds
06/27/2002US20020081819 Electronic component with shielding and method for its production
06/27/2002US20020081818 Semiconductor device and method of manufacturing the same
06/27/2002US20020081817 Void reduction and increased throughput in trench fill processes
06/27/2002US20020081816 Method and device for protecting micro electromechanical systems structures during dicing of a wafer
06/27/2002US20020081815 Fiducial mark bodies for charged-particle-beam (CPB) microlithography, methods for making same, and CPB microlithography apparatus comprising same
06/27/2002US20020081814 Self-aligned double-sided vertical MIMcap
06/27/2002US20020081813 Prevents the resistance between its lower electrode and plug from increasing
06/27/2002US20020081812 Method of manufacturing semiconductor device
06/27/2002US20020081811 Forming insulating layers in bipolar transistors by low pressure chemical vapor deposition in a single vacuum sequence of silicon nitride then silicon dioxide using as precursor bistertiarybutylaminosilane
06/27/2002US20020081810 Method of manufacturing self-aligned gate transistor
06/27/2002US20020081809 Method and system for integrating shallow trench and deep trench isolation structures in a semiconductor device