Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
07/2002
07/04/2002US20020086562 Contact pin module and testing device provided with the same
07/04/2002US20020086557 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
07/04/2002US20020086556 Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices
07/04/2002US20020086555 Methods of forming silicon-Doped Aluminum oxide, and methods of forming tranisistors and memory devices
07/04/2002US20020086554 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
07/04/2002US20020086553 Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof
07/04/2002US20020086552 Etching carried out by using a solution containing sulfuric acid and ammonium fluoride or sulfuric acid and hydrogen fluoride as main components, and water to obtain semiconductor device
07/04/2002US20020086551 Process for producing macroscopic cavities beneath the surface of a silicon wafer
07/04/2002US20020086550 Method of etching patterns into epitaxial material
07/04/2002US20020086549 Resist mask having measurement marks for measuring the accuracy of overlay of a photomask disposed on semiconductor wafer
07/04/2002US20020086548 Method for forming gate dielectric layer in NROM
07/04/2002US20020086547 Etch pattern definition using a CVD organic layer as an anti-reflection coating and hardmask
07/04/2002US20020086546 Plasma processing system in which wafer is retained by electrostatic chuck, plasma processing method and method of manufacturing semiconductor device
07/04/2002US20020086545 Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
07/04/2002US20020086544 Laser machining of semiconductor materials
07/04/2002US20020086543 Forming silicon nitride comprising layer over semiconductor substrate; etching at least portion of silicon nitride comprising layer using an etching chemistry comprising ammonia and at least one fluorocarbon
07/04/2002US20020086542 Fabrication of semiconductor devices
07/04/2002US20020086541 Method of forming silicon nitride on a substrate
07/04/2002US20020086539 Process for reclaiming semiconductor wafers and reclaimed wafers
07/04/2002US20020086538 Method for polishing semiconductor device
07/04/2002US20020086537 Removal of CMP residue from semiconductor substrate using supercritical carbon dioxide process
07/04/2002US20020086535 Method for local etching
07/04/2002US20020086534 Providing template having epitaxial-initiating growth surface; sputtering Group III metal target to produce Group III metal source vapor; mixing with nigrogen-containing gas vapors; depositing to produce single-crystal Group III metal nitride
07/04/2002US20020086533 Forming copper bonding pad on top level of metallization; chemical mechanical polishing of bonding pad; etching pad; depositing a barrier layer over bonding pad; depositing aluminum or aluminum-copper alloy over barreier layer
07/04/2002US20020086532 Method for processing a monocrystalline Si-semiconductor wafer
07/04/2002US20020086531 Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process
07/04/2002US20020086530 High density connectors; connecting copper to dielectric; precleaning with argon; polyimide silicone epoxy adhesive
07/04/2002US20020086529 Actively cooled dispenser system for improved resistivity and phase control in metal CVD from organometallic precursors
07/04/2002US20020086528 Adhesion promotion method for CVD copper metallization in IC applications
07/04/2002US20020086527 Method for depositing a two-layer diffusion barrier
07/04/2002US20020086526 Apparatus and a method for forming an alloy layer over a substrate
07/04/2002US20020086525 Method for fabricating a dual damascene structure
07/04/2002US20020086524 Memory elements and methods for making same
07/04/2002US20020086523 Barbed vias for electrical and mechanical connection between conductive layers in semiconductor devices
07/04/2002US20020086522 Process for isolating an exposed conducting surface
07/04/2002US20020086521 Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices
07/04/2002US20020086520 Semiconductor device having bump electrode
07/04/2002US20020086519 Stacked vias and method
07/04/2002US20020086518 Methods for producing electrode and semiconductor device
07/04/2002US20020086517 Barbed vias for electrical and mechanical connection between conductive layers in semiconductor devices
07/04/2002US20020086516 Sub-minimum wiring structure
07/04/2002US20020086515 Method of manufacturing bump electrodes and a method of manufacturing a semiconductor device
07/04/2002US20020086514 Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device
07/04/2002US20020086513 Mask repattern process
07/04/2002US20020086512 Method of forming solder bumps
07/04/2002US20020086511 Method for fabricating a patterned layer
07/04/2002US20020086510 Technique to produce isolated junctions by forming an insulation layer
07/04/2002US20020086509 Method for fabricating a contact pad of semiconductor device
07/04/2002US20020086508 Focused ion beam metal deposition
07/04/2002US20020086507 Method of forming a metal gate in a semiconductor device
07/04/2002US20020086506 Method of fabricating an integrated circuit processed on both sides
07/04/2002US20020086505 Transistor structure having silicide soure/drain extensions
07/04/2002US20020086504 Method of manufacturing semiconductor devices
07/04/2002US20020086503 Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures
07/04/2002US20020086502 Method of forming a doped region in a semiconductor material
07/04/2002US20020086501 Diamond coatings on reactor wall and method of manufacturing thereof
07/04/2002US20020086500 Semiconductor package and fabricating method thereof
07/04/2002US20020086499 Process to improve Nwell-Nwell isolation with a blanket low dose high energy implant
07/04/2002US20020086498 Method of fabricating semiconductor device having element isolation trench
07/04/2002US20020086497 Beaker shape trench with nitride pull-back for STI
07/04/2002US20020086496 Method of producing a semiconductor device
07/04/2002US20020086495 Method of fabricating a trench isolation structure having sidewall oxide layers with different thicknesses
07/04/2002US20020086494 Method of fusion for heteroepitaxial layers and overgrowth thereon
07/04/2002US20020086493 Manufacturing method of semiconductor device having DRAM capacitors
07/04/2002US20020086492 High density metal capacitor using via etch stopping layer as field dielectric in dual-damascence interconnect process
07/04/2002US20020086491 Semiconductor device having a metal gate with a work function compatible with a semiconductor device
07/04/2002US20020086490 Method of fabricating semiconductor device
07/04/2002US20020086489 Use of sidewall spacer in PNP layout to minimize silicided area of emitter
07/04/2002US20020086488 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor
07/04/2002US20020086487 Integrated circuit fabrication method for self-aligned copper diffusion barrier
07/04/2002US20020086486 Method of manufacturing semiconductor device and the semiconductor device
07/04/2002US20020086485 Method to improve silicide formation on polysilicon
07/04/2002US20020086484 Low-Vt CMOS transistor design using a single mask and without any additional implants by way of tailoring the effective channel length (Leff)
07/04/2002US20020086483 Fabrication method of single electron tunneling transistors using a focused-ion beam
07/04/2002US20020086482 Method and structure for an improved floating gate memory cell
07/04/2002US20020086481 Method of fabricating deep trench capacitor
07/04/2002US20020086480 Method of manufacturing a capacitor in a semiconductor device
07/04/2002US20020086479 Methods of forming capacitors and resultant capacitor structures
07/04/2002US20020086478 Method for fabricating a trench isolation for electrically active components
07/04/2002US20020086476 Depositing a silicon oxide layer having a low dielectric constant, a high oxide content, and sufficient carbon content to provide barrier properties
07/04/2002US20020086475 Zero overlap contact/via with metal plug
07/04/2002US20020086473 Process for fabricating CMOS transistor of IC devices employing double spacers for preventing short-channel effects
07/04/2002US20020086472 Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel
07/04/2002US20020086471 Single crystal TFT from continuous transition metal delivery method
07/04/2002US20020086470 Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon
07/04/2002US20020086469 Method for fabricating polysilicon thin film transistor
07/04/2002US20020086468 Crystallization method of amorphous silicon
07/04/2002US20020086467 Substrate-blased silicon diode for electrostatic discharge protection and fabrication method
07/04/2002US20020086466 Integrated circuit with conductive lines disposed within isolation regions
07/04/2002US20020086465 Sub-lithographics opening for back contact or back gate
07/04/2002US20020086464 SPIMOX/SIMOX combination with ITOX option
07/04/2002US20020086463 Means for forming SOI
07/04/2002US20020086461 Radiation hardened semiconductor memory
07/04/2002US20020086453 Method of fabricating a liquid crystal display with reduced contact resistance
07/04/2002US20020086452 Methods of forming semiconductor structure
07/04/2002US20020086451 Manufacture method for semiconductor inspection apparatus
07/04/2002US20020086450 Exposed and embedded overlay structure
07/04/2002US20020086448 Method for manufacturing a semiconductor device
07/04/2002US20020086447 Method for fabricating capacitor
07/04/2002US20020086446 Method for manufacturing a monolithic structure including a perovskite dielectric capacitor