Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/2002
08/22/2002WO2002043124A3 Method for making a substrate in particular for optics, electronics or optoelectronics and resulting substrate
08/22/2002WO2002043115A3 Surface preparation prior to deposition
08/22/2002WO2002041339A3 Method for producing ferroelectric capacitors and integrated ferroelectric semiconductor memory arrangement
08/22/2002WO2002037538A3 Amorphous carbon layer for improved adhesion of photoresist
08/22/2002WO2002027768A3 Fabrication of semiconductor devices
08/22/2002WO2002025375A3 Pinhole defect repair by resist flow
08/22/2002WO2002023674A3 Thick film millimeter wave transceiver module
08/22/2002WO2002023611A3 Integration of silicon etch and chamber cleaning processes
08/22/2002WO2002021573A3 Ccd image sensor and method of manufacturing same
08/22/2002WO2002018653A3 Method for depositing nitride layers
08/22/2002WO2002017364A3 Micromechanical multichip module and method of making same
08/22/2002WO2002017019A3 Oxime sulfonate and n-oxyimidosulfonate photoacid generators and photoresists comprising same
08/22/2002WO2002012350A3 Photoinitiated reactions
08/22/2002WO2002011182A3 Fine pattern drawing method
08/22/2002WO2002007233A3 Group iii nitride compound semiconductor device
08/22/2002WO2002006901A3 Photoresist composition for deep uv and process thereof
08/22/2002WO2002001613A3 Method and apparatus for wafer cleaning
08/22/2002WO2001080281A3 Stand alone plasma vacuum pump
08/22/2002WO2001065608A3 Trench gate dmos field-effect transistor and method of making the same
08/22/2002WO2001063655A8 Chemical-mechanical polishing device, damascene wiring forming device, and damascene wiring forming method
08/22/2002WO2000042638A3 Device for positioning a wafer
08/22/2002WO2000032713A9 Stabilized slurry compositions
08/22/2002WO2000028278A9 Electronics assembly apparatus with height sensing sensor
08/22/2002WO2000022198A9 Thermally annealed, low defect density single crystal silicon
08/22/2002US20020116697 Methods for calculating, correcting, and displaying segmented reticle patterns for use in charged-particle-beam microlithography, and screen editors utilizing such methods
08/22/2002US20020116691 Semi-physical modeling of HEMT high frequency noise equivalent circuit models
08/22/2002US20020116687 Optimization method for element placement
08/22/2002US20020116686 Continuously variable dummy pattern density generating systems, methods and computer program products for patterning integrated circuits
08/22/2002US20020116685 Timing closure methodology
08/22/2002US20020116674 Boundary scan delay chain for cross-chip delay measurement
08/22/2002US20020116671 Alarm display unit of IC tester
08/22/2002US20020116086 Installation for processing wafers
08/22/2002US20020116083 System and method for automated monitoring and assessment of fabrication facility
08/22/2002US20020116076 Substrate processing apparatus and information storage apparatus and method
08/22/2002US20020115886 Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same
08/22/2002US20020115741 Alkali-soluble resin,such as a phenolic resin, that has been modified with aniline or an aniline derivative
08/22/2002US20020115580 Method for stripping copper in damascene interconnects
08/22/2002US20020115397 System and method for CMP head having multi-pressure annular zone subcarrier material removal control
08/22/2002US20020115392 Wafer planarization apparatus and planarization method thereof
08/22/2002US20020115387 Double-side polishing process with reduced scratch rate and device for carrying out the process
08/22/2002US20020115384 Fixed-abrasive chemical-mechanical planarization of titanium nitride
08/22/2002US20020115380 Polishing end point detecting device for wafer polishing apparatus
08/22/2002US20020115379 Polishing disk with end-point detection port
08/22/2002US20020115310 Etching mask, process for forming contact holes using same, and semiconductor device made by the process
08/22/2002US20020115309 Heat-resistant core and a core covering comprising a carbon based yarn. The knitted garment is heat treated to at least partially decompose the carbon based yarn to form activated charcoal
08/22/2002US20020115308 Semiconductor device with porous interlayer insulating film
08/22/2002US20020115307 Manufacturing method for ferroelectric thin film using sol-gel process
08/22/2002US20020115306 Method for forming a thin film
08/22/2002US20020115305 Method for stabilizing low dielectric constant materials
08/22/2002US20020115304 Manufacturing method for a field-effect transistor, manufacturing method for a semiconductor device, and apparatus therefor
08/22/2002US20020115303 Semiconductor device and method of producing the same
08/22/2002US20020115302 Aggregate dielectric layer to reduce nitride consumption
08/22/2002US20020115299 Method of etching metallic thin film on thin film resistor
08/22/2002US20020115298 Thin film transistor array panel for a liquid crystal display
08/22/2002US20020115297 Process for manufacturing reflective TFT-LCD with rough diffuser
08/22/2002US20020115296 Method for avoiding erosion of conductor structure during removing etching residues
08/22/2002US20020115295 Process of manufacturing semiconductor device
08/22/2002US20020115294 Epitaxial semiconductor wafer manufacturing method
08/22/2002US20020115292 Method for forming electromigration-resistant structures by doping
08/22/2002US20020115291 Method of fabricating node contacts
08/22/2002US20020115290 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
08/22/2002US20020115289 Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
08/22/2002US20020115288 Method for decreasing the resistivity of the gate and the leaky junction of the source/drain
08/22/2002US20020115287 Method and apparatus for forming improved metal interconnects
08/22/2002US20020115286 Integrated circuit device with MIM capacitance circuit and method of manufacturing the same
08/22/2002US20020115285 Mechanically reinforced highly porous low dielectric constant films
08/22/2002US20020115284 Method of cleaning a dual damascene structure
08/22/2002US20020115283 Planarization by selective electro-dissolution
08/22/2002US20020115282 Chip structure and process for forming the same
08/22/2002US20020115281 Semiconductor integrated circuit device and method for making the same
08/22/2002US20020115279 Use of palladium in IC manufacturing
08/22/2002US20020115278 Method of mounting a semiconductor chip, circuit board for flip-chip connection and method of manufacturing the same, electromagnetic wave readable data carrier and method of manufacturing the same, and electronic component module for an electromagnetic wave readable data carrier
08/22/2002US20020115276 A method of etching polycrystalline silicon film by using two consecutive dry-etching processes
08/22/2002US20020115275 Method for forming a dielectric layer of a semiconductor device and a capacitor using the same
08/22/2002US20020115274 Semiconductor device and method of manufacturing the same
08/22/2002US20020115272 Manufacturing method for improving reliability of polysilicon thin film transistors
08/22/2002US20020115271 Method of manufacturing a semiconductor device
08/22/2002US20020115270 Methods of fabricating high-reliability and high-efficiency trench isolation for semiconductor devices
08/22/2002US20020115269 Method of depositing amorphous silicon based films having controlled conductivity
08/22/2002US20020115268 Silicon-on-insulator (SOI) substrate and method for manufacturing the same
08/22/2002US20020115267 Semiconductor thin film, semiconductor element and semiconductor device, and fabrication methods thereof
08/22/2002US20020115266 Method and a system for sealing an epitaxial silicon layer on a substrate
08/22/2002US20020115265 Method of transferring a device, a method of producing a device holding substrate, and a device holding substrate
08/22/2002US20020115264 Controlled cleavage process using pressurized fluid
08/22/2002US20020115263 Method and related apparatus of processing a substrate
08/22/2002US20020115262 Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
08/22/2002US20020115261 Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts
08/22/2002US20020115260 Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
08/22/2002US20020115258 Overcoating electrode with tantalum oxynitride; heat treatment; low pressure vapor deposition
08/22/2002US20020115257 Insulated gate type semiconductor device and method for fabricating the same
08/22/2002US20020115256 Non-volatile memory device having a bit line contact pad and method for manufacturing the same
08/22/2002US20020115255 Method of fabricating a non-volatile memory device
08/22/2002US20020115254 Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
08/22/2002US20020115253 Method for fabricating a semiconductor memory component
08/22/2002US20020115252 Dielectric interface films and methods therefor
08/22/2002US20020115251 Method of fabricating a semiconductor device
08/22/2002US20020115249 Method for manufacturing gate spacer for self-aligned contact
08/22/2002US20020115248 Semiconductor processing methods of forming a contact opening to a conductive line and methods of forming substrate active area source/drain regions
08/22/2002US20020115247 Process for fabricating a deep submicron complementary metal oxide semiconductor having ultra shallow junctions
08/22/2002US20020115246 Method for crystallizing silicon film and thin film transistor and fabricating method using the same