Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2002
12/26/2002US20020197886 Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures
12/26/2002US20020197885 Method of making a semiconductor transistor by implanting ions into a gate dielectric layer thereof
12/26/2002US20020197884 Method of two-step annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
12/26/2002US20020197883 Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile
12/26/2002US20020197882 Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates
12/26/2002US20020197881 Method for fabricating a semiconductor structure including a metal oxide interface with silicon
12/26/2002US20020197880 Coating silicon oxide substrates with thin films of nitrogen from low energy gas discharges to form insulators on transistors; semiconductors
12/26/2002US20020197878 Film forming method and film forming apparatus
12/26/2002US20020197877 Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
12/26/2002US20020197876 Single-chamber dual-temperature photoresist dry strip
12/26/2002US20020197875 Method for controlling profile formation of low taper angle in metal thin film electorde
12/26/2002US20020197874 Self-aligned sti for narrow trenches
12/26/2002US20020197873 Method for improved die release of a semiconductor device from a wafer
12/26/2002US20020197871 Method of polishing a film
12/26/2002US20020197870 High speed stripping for damaged photoresist
12/26/2002US20020197869 Water-based resist stripping liquid management apparatus and water-based resist stripping liquid management method
12/26/2002US20020197868 Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same
12/26/2002US20020197866 Fabrication method of a semiconductor device
12/26/2002US20020197865 Method for forming a capping layer on a copper interconnect
12/26/2002US20020197864 Radical-assisted sequential CVD
12/26/2002US20020197863 System and method to form a composite film stack utilizing sequential deposition techniques
12/26/2002US20020197862 Semiconductor component in a wafer assembly
12/26/2002US20020197861 Titanium disilicide resistance in pinched active regions of semiconductor devices
12/26/2002US20020197860 Smart power device and method for fabricating the same
12/26/2002US20020197859 Method for forming a polycide structure in a semiconductor device
12/26/2002US20020197858 Method for fabricating semiconductor devices
12/26/2002US20020197857 Method of using tantalum-aluminum-nitrogen material as diffusion barrier and adhesion layer in semiconductor devices
12/26/2002US20020197856 Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
12/26/2002US20020197855 Chemical mechanical polishing slurry and process for ruthenium films
12/26/2002US20020197854 Selective deposition of materials for the fabrication of interconnects and contacts on semiconductor devices
12/26/2002US20020197853 Substrate cleaning method and method for producing an electronic device
12/26/2002US20020197852 Method of fabricating a barrier layer with high tensile strength
12/26/2002US20020197851 Focused ion beam deposition
12/26/2002US20020197850 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
12/26/2002US20020197849 Very low dielectric constant plasma-enhanced CVD films
12/26/2002US20020197848 Semiconductor processing methods of forming integrated circuitry, forming conductive lines, forming a conductive grid, forming a conductive network, forming an electrical interconnection to a node location, forming an electrical interconnection with a transistor source/drain region, and integrated circuitry
12/26/2002US20020197847 Semiconductor device and method of manufacturing the same
12/26/2002US20020197846 Semiconductor device and manufacturing method thereof
12/26/2002US20020197845 Process for making an electronic device having a multilevel structure
12/26/2002US20020197844 Single damascene method for RF IC passive component integration in copper interconnect process
12/26/2002US20020197843 Gravitationally assisted control of spread of viscous material applied to semiconductor assembly components
12/26/2002US20020197842 Bumping process
12/26/2002US20020197841 Group III nitride compound semiconductor element and method for producing the same
12/26/2002US20020197840 Method for two-sided fabrication of a memory array
12/26/2002US20020197839 Anti-spacer structure for self-aligned independent gate implantation
12/26/2002US20020197838 Transistor fabrication method
12/26/2002US20020197837 Method of forming a MOS transistor of a semiconductor device
12/26/2002US20020197836 Method of forming variable oxide thicknesses across semiconductor chips
12/26/2002US20020197835 Anti-reflective coating and methods of making the same
12/26/2002US20020197833 Method of varying the resistance along a conductive layer
12/26/2002US20020197832 Method for fabricating a semiconductor component and semiconductor component
12/26/2002US20020197831 comprising forming a protective film on a surface of a lower-layer interconnection, forming a multilayer-structured film by stacking two porous films, two non-porous films on a surface of the protective film , and forming a via hole
12/26/2002US20020197830 Method and apparatus for producing group III nitride compound semiconductor
12/26/2002US20020197829 Method of manufacturing polycrystalline film and semiconductor device
12/26/2002US20020197828 Method and apparatus for manufacturing a semiconductor device and processing a substrate
12/26/2002US20020197827 Method for producing group III nitride compound semiconductor device
12/26/2002US20020197826 Singulation method used in leadless packaging process
12/26/2002US20020197825 Semiconductor substrate made of group III nitride, and process for manufacture thereof
12/26/2002US20020197823 Isolation method for semiconductor device
12/26/2002US20020197822 Method of forming shallow trench isolation
12/26/2002US20020197821 Method of forming shallow trench isolation
12/26/2002US20020197820 Substrate isolated transistor
12/26/2002US20020197819 Method of manufacturing semiconductor device including a step of forming element isolation trench and semiconductor device
12/26/2002US20020197818 Method of producing low thermal budget high dielectric constant structures
12/26/2002US20020197817 Methods for forming a capacitor of a semiconductor device
12/26/2002US20020197816 Structural integrity enhancement of dielectric films
12/26/2002US20020197815 Semiconductor device having capacitors and method of manufacturing the same
12/26/2002US20020197814 Process for low temperature atomic layer deposition of Rh
12/26/2002US20020197813 Method of forming contact holes in semiconductor devices and method of forming capacitors using the same
12/26/2002US20020197812 Method for integrating high-voltage device and low-voltage device
12/26/2002US20020197810 Mosfet having a variable gate oxide thickness and a variable gate work function, and a method for making the same
12/26/2002US20020197809 Semiconductor device and method for fabricating the same
12/26/2002US20020197808 A bipolar transistor with reduced emitter to base capacitance
12/26/2002US20020197807 Non-self-aligned SiGe heterojunction bipolar transistor
12/26/2002US20020197806 Methods using disposable and permanent films for diffusion and implantation doping
12/26/2002US20020197805 Method for fabricating a MOS transistor using a self-aligned silicide technique
12/26/2002US20020197804 Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors
12/26/2002US20020197803 Enhancement of p-type metal-oxide-semiconductor field effect transistors
12/26/2002US20020197801 Method for forming a single wiring level for transistors with planar and vertical gates on the same substrate
12/26/2002US20020197800 A semiconductor integrated circuit and fabrication process having compensated structures to reduce manufacturing defects
12/26/2002US20020197799 Methods of fabricating read only memory devices including thermally oxidized transistor sidewalls, and devices so fabricated
12/26/2002US20020197798 Self-aligned floating gate flash cell system and method
12/26/2002US20020197797 Non-volatile read only memory and its manufacturing method
12/26/2002US20020197796 Method for forming flash memory cell
12/26/2002US20020197795 Method of manufacturing non-volatile semiconductor memory device
12/26/2002US20020197794 Method of manufacturing thin film transistor in semiconductor device
12/26/2002US20020197793 Low thermal budget metal oxide deposition for capacitor structures
12/26/2002US20020197792 Method of integrating volatile and non-volatile memory cells on the same substrate and a semiconductor memory device thereof
12/26/2002US20020197791 Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer
12/26/2002US20020197790 Method of making a compound, high-K, gate and capacitor insulator layer
12/26/2002US20020197789 High mobility fets using al2o3 as a gate oxide
12/26/2002US20020197788 Integrated circuit memory devices having non-volatile memory transistors and methods of fabricating the same
12/26/2002US20020197787 Selective polysilicon stud growth
12/26/2002US20020197786 Applying epitaxial silicon in disposable spacer flow
12/26/2002US20020197785 Process for manufacturing a semiconductor device
12/26/2002US20020197784 Method for forming a gate dielectric layer by a single wafer process
12/26/2002US20020197783 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit
12/26/2002US20020197782 Method of manufacturing semiconductor device
12/26/2002US20020197781 Double gated transistor and method of fabrication
12/26/2002US20020197780 Method for forming a metal oxide semiconductor type field effect transistor
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