H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2002
12/19/2002	US20020190293 Semiconductor device having a ferroelectric capacitor
12/19/2002	US20020190292 Semiconductor devices, memory systems and electronic apparatuses
12/19/2002	US20020190291 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
12/19/2002	US20020190290 Semiconductor device and method for manufacturing the same
12/19/2002	US20020190289 PCRAM memory cell and method of making same
12/19/2002	US20020190285 Power supply apparatus using power semiconductor switching element
12/19/2002	US20020190284 Novel mos transistor structure and method of fabrication
12/19/2002	US20020190281 Hydrogen implant for buffer zone of punch-through non EPI IGBT
12/19/2002	US20020190280 Semiconductor device, memory system and electronic apparatus
12/19/2002	US20020190277 Semiconductor integrated circuit device and method of producing the same
12/19/2002	US20020190276 Process for the formation of RuSixOy-containing barrier layers for high-k dielectrics
12/19/2002	US20020190275 III nitride film and a III nitride multilayer
12/19/2002	US20020190274 High density single transistor ferroelectric non-volatile memory
12/19/2002	US20020190273 Bipolar transistor with upper heterojunction collector and method for making same
12/19/2002	US20020190272 Heterojunction bipolar transistor with tensile graded carbon-doped base layer grown by mocvd
12/19/2002	US20020190270 Semiconductor structure for spacial power combining and method of fabrication
12/19/2002	US20020190269 Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby
12/19/2002	US20020190268 Methods of forming transistor devices
12/19/2002	US20020190266 Semiconductor package having a resin cap member
12/19/2002	US20020190265 T-Ram cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
12/19/2002	US20020190259 III-Nitride light emitting devices with low driving voltage
12/19/2002	US20020190255 Semiconductor integrated circuit device
12/19/2002	US20020190253 Thin film transistor formed by an etching process with high anisotropy
12/19/2002	US20020190252 In-line electrical monitor for measuring mechanical stress at the device level on a semiconductor wafer
12/19/2002	US20020190232 Structure and method for fabricating semiconductor structures and devices for detecting smoke
12/19/2002	US20020190218 Method and apparatus for simultaneously depositing and observing materials on a target
12/19/2002	US20020190207 Methods and systems for determining a characteristic of micro defects on a specimen
12/19/2002	US20020190189 Light exposure apparatus
12/19/2002	US20020190107 Method for forming a micro column grid array (CGA)
12/19/2002	US20020190106 Method for hermetic sealing of electronic parts
12/19/2002	US20020190054 Ceramic heater for semiconductor manufacturing /testing apparatus
12/19/2002	US20020190052 Thermal processing apparatus for introducing gas between a target object and a cooling unit for cooling the target object
12/19/2002	US20020190051 Low profile thick film heaters in multi-slot bake chamber
12/19/2002	US20020190048 Fabrication of an electrically conductive silicon carbide article
12/19/2002	US20020190028 Method of improving uniformity of etching of a film on an article
12/19/2002	US20020190027 For performing microfabrication of semiconductor based logic, memory and optoelectronic devices and micromechanical systems
12/19/2002	US20020190025 Methods for etching tungsten stack structures
12/19/2002	US20020190024 Etching method and cleaning method of chemical vapor growth apparatus
12/19/2002	US20020189940 Substrate support with multilevel heat transfer mechanism
12/19/2002	US20020189933 Silicon oxidation layer, a lower electrode, a ferroelectric layer and an upper electrode are formed on a silicon substrate
12/19/2002	US20020189859 Printed circuit board and its manufacturing method
12/19/2002	US20020189852 Fabricating method of semiconductor devices, fabricating method of printed wired boards, and printed wired board
12/19/2002	US20020189835 Semiconductor device
12/19/2002	US20020189834 Electronic element with a shielding
12/19/2002	US20020189832 Conductive cap, electronic component, and method of forming insulating film of conductive cap
12/19/2002	US20020189790 Heat sink
12/19/2002	US20020189767 Chip bonding device
12/19/2002	US20020189763 Plasma processing apparatus having parallel resonance antenna for very high frequency
12/19/2002	US20020189762 Semiconductor decive fabricating equipment using radio frequency energy
12/19/2002	US20020189761 Use of pulsed grounding source in a plasma reactor
12/19/2002	US20020189760 Ashing apparatus for semiconductor device
12/19/2002	US20020189759 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
12/19/2002	US20020189758 Substrate processing apparatus, substrate inspection method and substrate procesing system
12/19/2002	US20020189757 Apparatus for measuring temperatures of separate locations on substrate in plasma processing system, including substrate holder, broad band light source emitting range of wavelengths, light collectors for collecting portion of light transmitted
12/19/2002	US20020189742 Glass ceramic multilayer substrate manufacturing method and glass ceramic multilayer substrate product
12/19/2002	US20020189665 Preparation of CIGS-based solar cells using a buffered electrodeposition bath
12/19/2002	US20020189652 Reactor for processing a semiconductor wafer
12/19/2002	US20020189651 A cleaning apparatus comprising at least one diffusor to introduce the fluid into the treatment basin; improve fluid flow with an adjustable spacing between the diffusor and the substrates; semiconductor industry
12/19/2002	US20020189643 Method and apparatus for cleaning/drying hydrophobic wafers
12/19/2002	US20020189641 Performing a cleaning by using a two-fluid nozzle for forming mist by mixing a cleaning solution and a pressurized gas
12/19/2002	US20020189640 Immersing wafer in a pre-clean aqueous cleaning solution containing hydrogen peroxide and ammonium hydroxide to remove organic impurities and form soluble complexes of contaminant metals, which are removed with hydrogen chloride and H1F1
12/19/2002	US20020189639 Cleaning water for cleaning a wafer and method of cleaning a wafer
12/19/2002	US20020189638 Configurable single substrate wet-dry integrated cluster cleaner
12/19/2002	US20020189544 Use of pulsed grounding source in a plasma reactor
12/19/2002	US20020189543 High pressure processing chamber for semiconductor substrate including flow enhancing features
12/19/2002	US20020189532 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
12/19/2002	US20020189528 Non-oxygen precipitating Czochralski silicon wafers
12/19/2002	US20020189527 Preparation of crystals
12/19/2002	US20020189495 Product obtained by hydrolyzing and condensing at least one silane compound, a compound compatible with or dispersible in that compound and having a boiling point or decomposition temperature of 250-450 degrees C, solvent
12/19/2002	US20020189380 Device for fast taking out and putting in
12/19/2002	US20020189169 Poly(meth)acrylic acid with average molecular weight of 20000-1500000, 1-15% of an oxidizer, 50-5000 ppm of a corrosion inhibitor, </=3% of a complexing agent, .1-5% of a surfactant; chemical mechanical polishing of a semiconductor
12/19/2002	US20020189122 Variable method and apparatus for alignment of automated workpiece handling systems
12/19/2002	US20020189118 Linearity measuring apparatus for wafer orientation flat
12/19/2002	US20020189093 Method and apparatus for forming modular sockets using flexible interconnects and resulting structures
12/19/2002	US20020189092 Method and apparatus for forming modular sockets using flexible interconnects and resulting structures
12/19/2002	DE10224935A1 Verfahren zum Ätzen von Öffnungen mit hohem Seitenverhältnis A method for etching high aspect ratio openings
12/19/2002	DE10223533A1 Ionenimplantiervorrichtung An ion implanter
12/19/2002	DE10216016A1 Halbleitervorrichtung zum Messen einer physikalischen Größe Semiconductor device for measuring a physical quantity
12/19/2002	DE10209989A1 Production of trench capacitor structures used for dynamic random access memories comprises forming deep trench openings in a first semiconductor structure, forming a trenched plate region, and further processing
12/19/2002	DE10164049A1 Passive Bauelementstruktur und zugehöriges integriertes Schaltkreisbauelement und Halbleiterbauelement Passive component structure and related integrated circuit device and semiconductor device
12/19/2002	DE10147646C1 Machining method for semiconductor disc edge calculates displacement rate for semiconductor disc by comparing overall material volume to be removed with volume removed per unit of time
12/19/2002	DE10142952A1 Production of micromechanical structure used as sensor or actuator comprises preparing micromechanical structure with micromechnical structural elements, and selectively etching
12/19/2002	DE10128241A1 Production of an IC chip component comprises providing a base material layer with a photolacquer, removing the photolacquer, fixing a chip on each chip carrier surface, contacting with connecting contacts, and further processing
12/19/2002	DE10127950A1 Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
12/19/2002	DE10127934A1 Strip conductor arrangement used in integrated circuits comprises first insulating layer, second insulating layer, third insulating layer, strip conductors, electrical contact electrically coupling strip conductors in first and third layers
12/19/2002	DE10127889A1 Process for re-melting solder material applied on connecting sites used in the semiconductor industry comprises re-melting the solder material using an RTP method
12/19/2002	DE10127888A1 Process for forming contact holes in contact regions of components integrated in a substrate comprises applying an insulating layer on a substrate with the integrated components, and applying a mask with openings
12/19/2002	DE10127622A1 Production of HDPCVD oxide-filled insulation trench used in production of integrated circuits comprises forming insulation trench in semiconductor substrate, and forming silicon oxide layers on side walls and on base of trench
12/19/2002	DE10127351A1 Electronic chip comprises several external contacts of which at least two are provided with a plurality of nano-tubes for purposes of contacting an external contact of another electronic chip
12/19/2002	DE10127336A1 Semiconductor storage cell for DRAM, comprises storage capacitor which incorporates super ion conductor layer located between the capacitor electrodes
12/19/2002	DE10126604C1 Production of memory cell array, e.g. dynamic random access memory, includes stages for contacting superimposed selective transistor and memory capacitor
12/19/2002	CA2457574A1 Method and apparatus for predicting sporting success conditions
12/19/2002	CA2454892A1 Optical element with full complex modulation
12/19/2002	CA2450135A1 Method for generating design constraints for modulates in a hierarchical integrated circuit design system
12/19/2002	CA2449574A1 Laser segmented cutting
12/19/2002	CA2446722A1 Oxime ester photoinitiators having a combined structure
12/19/2002	CA2441419A1 Polishing pads with polymer filled fibrous web, and methods for fabricating and using same
12/18/2002	EP1267596A2 Printed circuit board and its manufacturing method
12/18/2002	EP1267460A2 Method for fabricating a set of distributed feedback semiconductor lasers
12/18/2002	EP1267417A2 Semiconductor devices having group III-V compound layers

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