H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2002
12/19/2002	US20020191377 Material of heat-dissipating plate on which semiconductor is mounted, method for fabricating the same, and ceramic package produced by using the same
12/19/2002	US20020191358 Electrostatic discharge protection device
12/19/2002	US20020191354 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
12/19/2002	US20020191301 Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
12/19/2002	US20020191288 Microlithographic illumination method and a projection lens for carrying out the method
12/19/2002	US20020191187 Method of measuring surface form of semiconductor thin film
12/19/2002	US20020191180 Exposure apparatus and a device manufacturing method using the same
12/19/2002	US20020191179 Measurement of surface defects
12/19/2002	US20020191173 Balanced positioning system for use in lithographic apparatus
12/19/2002	US20020191172 Laser output control method, laser apparatus and exposure apparatus
12/19/2002	US20020191171 Exposure apparatus and method
12/19/2002	US20020191170 Illumination system and exposure apparatus and method
12/19/2002	US20020191167 Semiconductor exposure apparatus and device manufacturing method using the same
12/19/2002	US20020191165 Lithographic apparatus, device manufacturing method, and device manufactured thereby
12/19/2002	US20020191163 Exposure apparatus
12/19/2002	US20020191138 Active matrix type liquid crystal display device and fabrication method thereof
12/19/2002	US20020191123 Active plate
12/19/2002	US20020191122 Method of forming electrodes or pixel electrodes and a liquid crystal display device
12/19/2002	US20020191093 Charge multiplier with logarithmic dynamic range compression implemented in charge domain
12/19/2002	US20020191044 Ink-jet printhead board, ink-jet printhead, and ink-jet printing apparatus
12/19/2002	US20020190775 Low power clock distribution methodology
12/19/2002	US20020190744 Semiconductor integrated circuit and testing method thereof
12/19/2002	US20020190743 Method of testing semiconductor integrated circuits and testing board for use therein
12/19/2002	US20020190742 Semiconductor integrated circuit device capable of self-testing internal power supply currents provided to internal circuits integrated on chip
12/19/2002	US20020190741 Contactor for semiconductor devices, a testing apparatus using such contactor, a testing method using such contactor, and a method of cleaning such contactor
12/19/2002	US20020190740 Probe apparatus applicable to a wafer level burn-in screening
12/19/2002	US20020190737 Member for removing foreign matter adhering to probe tip and method of manufacturing the probe tip, method of cleaning foreign matter adhering to probe tip, probe, and probing apparatus
12/19/2002	US20020190736 Substrate Testing apparatus and substrate testing method
12/19/2002	US20020190657 Wafer area pressure control for plasma confinement
12/19/2002	US20020190637 Light emission apparatus and method of fabricating the same
12/19/2002	US20020190608 Indium or tin bonded megasonic transducer systems
12/19/2002	US20020190578 Semiconductor integrated circuit device
12/19/2002	US20020190429 Two-stage transfer molding method to encapsulate MMC module
12/19/2002	US20020190399 Semiconductor integrated circuit device and a method of manufacturing the same
12/19/2002	US20020190398 Static-type semiconductor memory device
12/19/2002	US20020190396 Method and apparatus for removing encapsulating material from a packaged microelectronic device
12/19/2002	US20020190395 Semiconductor device having bump electrodes
12/19/2002	US20020190394 Bed structure underlying electrode pad of semiconductor device and method for manufacturing same
12/19/2002	US20020190392 Semiconductor device and manufacturing method thereof
12/19/2002	US20020190391 Semiconductor device
12/19/2002	US20020190387 Substantially hillock-free aluminum-containing components
12/19/2002	US20020190386 Metal capacitors with damascene structures
12/19/2002	US20020190384 Method and apparatus for reducing fixed charge in semiconductor device layers
12/19/2002	US20020190383 Semiconductor device and method of fabricating the same
12/19/2002	US20020190382 Semiconductor device having dummy patterns for metal cmp
12/19/2002	US20020190380 Semiconductor device including a pad and a method of manufacturing the same
12/19/2002	US20020190379 W-CVD with fluorine-free tungsten nucleation
12/19/2002	US20020190378 Substrate within a Ni/Au structure electroplated on electrical contact pads and method for fabricating the same
12/19/2002	US20020190376 Package having terminated plating layer and its manufacturing method
12/19/2002	US20020190375 Semiconductor device and method of production of same
12/19/2002	US20020190374 Semiconductor device
12/19/2002	US20020190373 Electronic device, semiconductor device comprising such a device and method of manufacturing such a device
12/19/2002	US20020190371 Semiconductor device and method of production of same
12/19/2002	US20020190370 Siloxirane based no-flow underfill material
12/19/2002	US20020190365 Non-contact type IC card and process for manufacturing-same
12/19/2002	US20020190363 Semiconductor device package and method of die attach
12/19/2002	US20020190357 Semiconductor circuit device and process for manufacturing the same
12/19/2002	US20020190355 Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
12/19/2002	US20020190352 Semiconductor device and method for fabricating the same
12/19/2002	US20020190351 Semiconductor device and method of manufacture
12/19/2002	US20020190350 Programmable sub-surface aggregating metallization structure and method of making same
12/19/2002	US20020190349 Semiconductor device and method of manufacturing same
12/19/2002	US20020190348 Semiconductor device having anti-fuse structure
12/19/2002	US20020190347 Semiconductor device with variable pin locations
12/19/2002	US20020190346 High-gain PNP bipolar junction transistor in CMOS device and method for forming the same
12/19/2002	US20020190345 Semiconductor device having an improved isolation structure, and method of manufacturing the semiconductor device
12/19/2002	US20020190344 Semiconductor device having a ghost source/drain region and a method of manufacture therefor
12/19/2002	US20020190343 Integration of two memory types on the same integrated circuit
12/19/2002	US20020190342 Method of fabricating semiconductor device having trench isolation structure
12/19/2002	US20020190339 Semiconductor cmos structures with an undoped region
12/19/2002	US20020190336 Semiconductor device
12/19/2002	US20020190332 Thin film transistor, and organic EL display thereof and method for fabricating the same
12/19/2002	US20020190331 A semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor
12/19/2002	US20020190330 Semiconductor device, memory system and electronic apparatus
12/19/2002	US20020190329 Self-light-emitting apparatus and semiconductor device used in the apparatus
12/19/2002	US20020190323 Semiconductor device and its manufacturing method
12/19/2002	US20020190322 SOI CMOS device with reduced DIBL
12/19/2002	US20020190321 Semiconductor device and method of fabricating the same
12/19/2002	US20020190318 Divot reduction in SIMOX layers
12/19/2002	US20020190316 Semiconductor device with borderless contact structure and method of manufacturing the same
12/19/2002	US20020190315 Graded LDD implant process for sub-half-micron MOS devices
12/19/2002	US20020190314 Methods for manufacturing semiconductor devices and semiconductor devices
12/19/2002	US20020190313 Semiconductor device having mosfet of trench structure and method for fabricating the same
12/19/2002	US20020190312 Semiconductor device and method of fabricating the same
12/19/2002	US20020190311 Insulating barrier, NVM bandgap design
12/19/2002	US20020190309 Method for manufacturing a semiconductor device having lateral MOSFET (LDMOS)
12/19/2002	US20020190308 Structure of an embedded channel write/erase flash memory cell and fabricating method thereof
12/19/2002	US20020190307 Nonvolatile memories with floating gate spacers, and methods of fabrication
12/19/2002	US20020190306 Nonvolatile semiconductor memory device and manufacturing method thereof
12/19/2002	US20020190305 Nonvolatile memories with floating gate spacers, and methods of fabrication
12/19/2002	US20020190304 Nonvolatile ferroelectric memory device
12/19/2002	US20020190303 Methods to form rhodium-rich oxygen barriers
12/19/2002	US20020190302 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
12/19/2002	US20020190301 Capacitor with lower electrode located at the same level as an interconnect line
12/19/2002	US20020190300 Metal capacitors with damascene structures and method for forming the same
12/19/2002	US20020190299 Metal capacitor in damascene structures
12/19/2002	US20020190298 Trench capacitor of a dram memory cell with a metallic collar region and a non-metallic buried strap to a selection transistor
12/19/2002	US20020190296 Nonvolatile memory and method for driving nonvolatile memory
12/19/2002	US20020190295 Semiconductor integrated circuit device and the process of manufacturing the same
12/19/2002	US20020190294 Semiconductor device having a thin film capacitor and method for fabricating the same

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