Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2003
01/02/2003US20030003848 Edge contact loadcup
01/02/2003US20030003845 Optical monitoring in a two-step chemical mechanical polishing process
01/02/2003US20030003789 Semiconductor device-socket
01/02/2003US20030003774 Substrate processing method, substrate processing apparatus and substrate carrying method
01/02/2003US20030003773 Method for manufacturing annealed wafer and annealed wafer
01/02/2003US20030003772 Method of manufacturing semiconductor device having insulating film
01/02/2003US20030003771 Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon
01/02/2003US20030003770 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
01/02/2003US20030003769 Method for forming low dielectric constant insulating layer with foamed structure
01/02/2003US20030003768 Cvd plasma assisted lower dielectric constant sicoh film
01/02/2003US20030003766 Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit
01/02/2003US20030003765 Split barrier layer including nitrogen-containing portion and oxygen-containing portion
01/02/2003US20030003764 Method of reducing overetch during the formation of a semiconductor device
01/02/2003US20030003763 Substrate for information recording media and manufacturing method thereof
01/02/2003US20030003762 Contacting an etched precision surface having vias, cavities, trenches or channels with a liquid or supercritical carbon dioxide and a fluoride-generating compound; cleaning compounds for semiconductor wafer, chip and ceramics
01/02/2003US20030003761 Method of forming opening in dielectric layer
01/02/2003US20030003760 Photoresist coating method and apparatus
01/02/2003US20030003759 Etch selectivity inversion for etching along crystallographic directions in silicon
01/02/2003US20030003758 Method of manufacturing semiconductor devices and semiconductor manufacturing apparatus
01/02/2003US20030003757 Method of etching tungsten or tungsten nitride in semiconductor structures
01/02/2003US20030003756 Method for forming contact by using arf lithography
01/02/2003US20030003755 Etching of high aspect ratio structures
01/02/2003US20030003754 Method of fabricating semiconductor device and semiconductor device
01/02/2003US20030003752 High resist-selectivity etch for silicon trench etch applications
01/02/2003US20030003751 Sidewall spacer definition of gates
01/02/2003US20030003750 Disposable spacer and method of forming and using same
01/02/2003US20030003749 High temperature electrostatic chuck
01/02/2003US20030003748 Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator
01/02/2003US20030003747 Slurry of ceric ammonium nitrate ((NH4)2Ce(NO3)6) providing improved polishing speed under low pressure in one step; deposited as a barrier film for a capacitor using barium strontium titanate as a dielectric layer; semiconductors
01/02/2003US20030003746 Process of providing a semiconductor device with electrical interconnection capability
01/02/2003US20030003745 New method for improving oxide erosion of tungsten CMP operations
01/02/2003US20030003744 Semiconductor chip configuration and fabrication method
01/02/2003US20030003743 Method and apparatus for cleaning a web-based chemical mechanical planarization system
01/02/2003US20030003742 Gas assisted method for applying resist stripper and gas-resist stripper combinations
01/02/2003US20030003741 Method of fabricating semiconductor device
01/02/2003US20030003740 Contact structure production method
01/02/2003US20030003733 Semiconductor integrated circuit device and fabrication process thereof
01/02/2003US20030003732 Method of post treatment for a metal line of semiconductor device
01/02/2003US20030003731 Method for manufacturing a silicide layer of semiconductor device
01/02/2003US20030003730 Sequential pulse deposition
01/02/2003US20030003729 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
01/02/2003US20030003728 Microstructure array, mold for forming a microstructure array, and method of fabricating the same
01/02/2003US20030003727 Method of making a semiconductor device with alloy film between barrier metal and interconnect
01/02/2003US20030003726 Metal lines of semiconductor devices and methods for forming
01/02/2003US20030003725 Manufacturing method for semiconductor apparatus
01/02/2003US20030003724 Manufacturing method of the semiconductor device
01/02/2003US20030003723 Method for manufacturing semiconductor device
01/02/2003US20030003722 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands
01/02/2003US20030003721 Thin titanium nitride layers used in conjunction with tungsten
01/02/2003US20030003720 Method for forming a bit line of a semiconductor device
01/02/2003US20030003719 Method and apparatus for manufacturing a barrier layer of semiconductor device
01/02/2003US20030003718 Methods for fabricating a semiconductor device
01/02/2003US20030003717 Method for forming a dual damascene line
01/02/2003US20030003716 Method for forming dual damascene line structure
01/02/2003US20030003715 Method for forming dual damascene line structure
01/02/2003US20030003714 Method for forming fine pattern in semiconductor device
01/02/2003US20030003713 Semiconductor device and method for manufacturing the same
01/02/2003US20030003712 Methods for fabricating a semiconductor device
01/02/2003US20030003711 Method of making a semiconductor device with aluminum capped copper interconnect pads
01/02/2003US20030003710 Method of making a semiconductor device that includes a dual damascene interconnect
01/02/2003US20030003709 Barrier material encapsulation of programmable material
01/02/2003US20030003708 Creation of subresolution features via flow characteristics
01/02/2003US20030003707 Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring
01/02/2003US20030003706 Substrate with top-flattened solder bumps and method for manufacturing the same
01/02/2003US20030003703 Process for forming fusible links
01/02/2003US20030003702 Formation of metal oxide gate dielectric
01/02/2003US20030003701 Growing copper vias or lines within a patterned resist using a copper seed layer
01/02/2003US20030003700 Methods providing oxide layers having reduced thicknesses at central portions thereof and related devices
01/02/2003US20030003699 High withstand voltage semiconductor device and method of manufacturing the same
01/02/2003US20030003697 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
01/02/2003US20030003695 Semiconductor substrate, SOI substrate and manufacturing method therefor
01/02/2003US20030003694 Method for forming silicon films with trace impurities
01/02/2003US20030003693 Method and apparatus for self-doping contacts to a semiconductor
01/02/2003US20030003692 Semiconductor device and method of manufacturing the same
01/02/2003US20030003690 Semiconductor device separation using a patterned laser projection
01/02/2003US20030003689 Semiconductor device including edge bond pads assemblies including the same and related methods
01/02/2003US20030003688 Method and apparatus for marking a bare semiconductor die
01/02/2003US20030003687 Method and apparatus for separating member
01/02/2003US20030003686 6617227 withdrawn after electronic O.G. published
01/02/2003US20030003685 Method for production of a regular multi-layer construction, in particular for electrical double layer capacitors and the corresponding device
01/02/2003US20030003684 Method and apparatus for multi-frequency bonding
01/02/2003US20030003683 Plasma enhanced method for increasing silicon-containing photoresist selectivity
01/02/2003US20030003682 Method for manufacturing an isolation trench filled with a high-density plasma-chemical vapor deposition oxide
01/02/2003US20030003681 Trench sidewall profile for device isolation
01/02/2003US20030003680 Method for manufacturing isolating structures
01/02/2003US20030003679 Creation of high mobility channels in thin-body SOI devices
01/02/2003US20030003678 Method of forming shallow trench isolation for thin silicon-on-insulator substrates
01/02/2003US20030003677 Alignment method, exposure apparatus and device fabrication method
01/02/2003US20030003675 Shared bit line cross point memory array
01/02/2003US20030003674 Electrically programmable resistance cross point memory
01/02/2003US20030003673 Method for fabricating flash memory device
01/02/2003US20030003672 High-pressure anneal process for integrated circuits
01/02/2003US20030003671 Method for manufacturing synchronous DRAM device
01/02/2003US20030003670 Method for fabricating semiconductor device
01/02/2003US20030003669 Process for manufacturing a DMOS transistor
01/02/2003US20030003668 Method for manufacturing a semiconductor device
01/02/2003US20030003667 Semiconductor device and method of fabricating the same
01/02/2003US20030003666 Semiconductor device and method for fabricating the same
01/02/2003US20030003665 Process for high-dielectric constant metal-insulator metal capacitor in VLSI multi-level metallization systems
01/02/2003US20030003664 Semiconductor device and manufacturing method thereof