Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2003
02/04/2003US6515351 Integrated circuit with borderless contacts
02/04/2003US6515350 Protective conformal silicon nitride films and spacers
02/04/2003US6515349 Semiconductor device and process for the same
02/04/2003US6515348 Semiconductor device with FET MESA structure and vertical contact electrodes
02/04/2003US6515347 Wafer level semiconductor device and method of manufacturing the same
02/04/2003US6515345 Transient voltage suppressor with diode overlaying another diode for conserving space
02/04/2003US6515342 Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion
02/04/2003US6515340 Separation and active region, gate oxide film; electrode coupled to source and drain region
02/04/2003US6515339 Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
02/04/2003US6515338 Semiconductor device and manufacturing method therefor
02/04/2003US6515337 Input protection circuit connected to projection circuit power source potential line
02/04/2003US6515336 Thin film transistors having tapered gate electrode and taped insulating film
02/04/2003US6515335 Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
02/04/2003US6515334 Hybrid circuit and electronic device using same
02/04/2003US6515333 Removal of heat from SOI device
02/04/2003US6515331 MOSFET structure for use in ESD protection devices
02/04/2003US6515330 Power device having vertical current path with enhanced pinch-off for current limiting
02/04/2003US6515329 Flash memory device and method of making same
02/04/2003US6515328 Semiconductor substrate; an insulating layer over the semiconductor substrate; a floating gate electrode overlying the insulating layer; a dielectric layer substantially free of pitting therein overlying the floating gate electrode; and a
02/04/2003US6515327 A memory cell and a method for making the same are provided. The trench capacitor includes a vertical trench formed in a semiconductor, a doping region formed around a low portion of the trench, a collar isolation layer formed on an inner
02/04/2003US6515326 Semiconductor memory device and method of fabricating the same
02/04/2003US6515325 Methods for making the same. An embodiment of the semiconductor devices comprises a vertical transistor/capacitor cell including a nanotube. The device includes a vertical transistor and a capacitor cell both using
02/04/2003US6515323 Ferroelectric memory device having improved ferroelectric characteristics
02/04/2003US6515322 Silicon substrate, a gate electrode formed through a gate insulator film on a principal surface of the semiconductor substrate, a pair of source/drain regions formed in a principal surface region of the semiconductor substrate to
02/04/2003US6515320 Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode
02/04/2003US6515319 Field-effect-controlled transistor and method for fabricating the transistor
02/04/2003US6515318 Charge transfer device
02/04/2003US6515316 Partially relaxed channel HEMT device
02/04/2003US6515309 LED array chip
02/04/2003US6515303 Method of forming vias in silicon carbide and resulting devices and circuits
02/04/2003US6515302 Power devices in wide bandgap semiconductor
02/04/2003US6515300 Method of making a TFT array with photo-imageable insulating layer over address lines
02/04/2003US6515299 Semiconductor device with rod like crystals and a recessed insulation layer
02/04/2003US6515293 Method and apparatus for detecting thickness of thin layer formed on a wafer
02/04/2003US6515291 Electron beam drawing apparatus and method of the same
02/04/2003US6515261 Enhanced lift pin
02/04/2003US6515073 Anti-reflective coating-forming composition
02/04/2003US6515038 Resist compositions containing polymers having dialkyl malonate groups for use in chemically amplified resists
02/04/2003US6514921 Cleaning agent
02/04/2003US6514886 Method for elimination of contaminants prior to epitaxy
02/04/2003US6514885 Semiconductor device manufacturing method to reduce process induced stress and crystalline defects
02/04/2003US6514884 Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
02/04/2003US6514883 Method of fabricating semiconductor device
02/04/2003US6514882 Aggregate dielectric layer to reduce nitride consumption
02/04/2003US6514881 Hybrid porous low-K dielectrics for integrated circuits
02/04/2003US6514880 Vaporizing a silicon-containing hydrocarbon compound producing gas for polysiloxane, chemical vapor deposition wherein semiconductor is placed, introducing additive gas (inert and oxidizing), forming film via plasma polymerization
02/04/2003US6514879 Configuration of various chemical compound generators coupled to a furnace provides the environment for formation of thin oxides of silicon on a wafer; forming steam from dichloroethylene, oxygen and hydrogen
02/04/2003US6514878 Method of fabricating a semiconductor device having a multilayered interconnection structure
02/04/2003US6514876 Pre-metal dielectric rapid thermal processing for sub-micron technology
02/04/2003US6514875 Chemical method for producing smooth surfaces on silicon wafers
02/04/2003US6514874 Method of using controlled resist footing on silicon nitride substrate for smaller spacing of integrated circuit device features
02/04/2003US6514873 Method for fabricating semiconductor device
02/04/2003US6514872 Method of manufacturing a semiconductor device
02/04/2003US6514871 Gate etch process with extended CD trim capability
02/04/2003US6514870 In situ wafer heat for reduced backside contamination
02/04/2003US6514869 Method for use in manufacturing a semiconductor device
02/04/2003US6514868 Method of creating a smaller contact using hard mask
02/04/2003US6514867 Method of creating narrow trench lines using hard mask
02/04/2003US6514866 Chemically enhanced focused ion beam micro-machining of copper
02/04/2003US6514865 Method of reducing interlayer dielectric thickness variation feeding into a planarization process
02/04/2003US6514864 Fabrication method for semiconductor integrated circuit device
02/04/2003US6514863 Method and apparatus for slurry distribution profile control in chemical-mechanical planarization
02/04/2003US6514862 Particles, solvent and a quaternary ammonium compound such as (2-hydroxyethyl)trimethylammonium chloride; improved removal selectivity between a layer to be polished and a silicon nitride stop layer
02/04/2003US6514861 Manufacturing a semiconductor wafer according to the process time by process tool
02/04/2003US6514860 Integration of organic fill for dual damascene process
02/04/2003US6514859 Method of salicide formation with a double gate silicide
02/04/2003US6514858 Test structure for providing depth of polish feedback
02/04/2003US6514857 Damascene structure fabricated using a layer of silicon-based photoresist material
02/04/2003US6514856 Method for forming multi-layered interconnect structure
02/04/2003US6514855 Semiconductor device manufacturing method having a porous insulating film
02/04/2003US6514854 Method of producing semiconductor integrated circuit device having a plug
02/04/2003US6514853 Semiconductor device and a manufacturing process therefor
02/04/2003US6514852 Semiconductor device and method of manufacturing the same
02/04/2003US6514851 Method of fabrication of multilayer semiconductor wiring structure with reduced alignment mark area
02/04/2003US6514850 Interface with dielectric layer and method of making
02/04/2003US6514849 Method of forming smaller contact size using a spacer hard mask
02/04/2003US6514848 Method for forming an interconnection in a semiconductor element
02/04/2003US6514847 Method for making a semiconductor device
02/04/2003US6514846 Method of fabricating soldering balls for semiconductor encapsulation
02/04/2003US6514844 Sidewall treatment for low dielectric constant (low K) materials by ion implantation
02/04/2003US6514843 Method of enhanced oxidation of MOS transistor gate corners
02/04/2003US6514842 Low resistance gate flash memory
02/04/2003US6514841 Forming diffusion barrier
02/04/2003US6514840 Micro heating of selective regions
02/04/2003US6514839 ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations
02/04/2003US6514838 Method for non mass selected ion implant profile control
02/04/2003US6514837 High density plasma chemical vapor deposition apparatus and gap filling method using the same
02/04/2003US6514836 Methods of producing strained microelectronic and/or optical integrated and discrete devices
02/04/2003US6514835 Stress control of thin films by mechanical deformation of wafer substrate
02/04/2003US6514834 Method of manufacturing a semiconductor device having a low leakage current
02/04/2003US6514833 Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove
02/04/2003US6514831 Nitride read only memory cell
02/04/2003US6514830 Method of manufacturing high voltage transistor with modified field implant mask
02/04/2003US6514829 Method of fabricating abrupt source/drain junctions
02/04/2003US6514828 Method of fabricating a highly reliable gate oxide
02/04/2003US6514827 Method for fabricating a dual metal gate for a semiconductor device
02/04/2003US6514826 Method of forming a gate electrode in a semiconductor device
02/04/2003US6514825 Technique for reducing 1/f noise in MOSFETs
02/04/2003US6514824 Semiconductor device with a pair of transistors having dual work function gate electrodes
02/04/2003US6514823 Method of making loadless four-transistor memory cell with different gate insulation thicknesses for N-channel drive transistors and P-channel access transistors