Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2003
01/30/2003US20030022800 Aqueous buffered fluoride-containing etch residue removers and cleaners
01/30/2003US20030022609 Carrier head with a flexible membrane to form multiple chambers
01/30/2003US20030022598 Abrasive article having a window system for polishing wafers, and methods
01/30/2003US20030022594 Polishing assistant apparatus of polishing assistant system
01/30/2003US20030022558 Electronic device, method of manufacturing the same and method of designing the same, and circuit board and electronic instrument
01/30/2003US20030022534 Method and apparatus for mounting chip
01/30/2003US20030022528 Improved Process for Deposition of Semiconductor Films
01/30/2003US20030022527 Removing hydrogen from the microcircuit in a vacuum furnace and annealing in deuterium-containing forming gas
01/30/2003US20030022526 Process for fabricating a dielectric film using plasma oxidation
01/30/2003US20030022525 Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the same
01/30/2003US20030022524 Using solvent such as glycerol, allows thin film aerogels/low density xerogels to be made without supercritical drying, and allows production at room temperature and atmospheric pressure
01/30/2003US20030022523 Manufacture system for semiconductor device with thin gate insulating film
01/30/2003US20030022522 Method for manufacturing semiconductor device
01/30/2003US20030022521 Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the same
01/30/2003US20030022520 Light-assisted deposition method for fabricating a compliant substrate for epitaxial growth of monocrystalline materials
01/30/2003US20030022519 Production apparatus of semiconductor layer employing DC bias and VHF power
01/30/2003US20030022518 Wherein the etching liquid contains silver ions in a given range; prevents silver or silver alloy residues, and gives even and stable etching
01/30/2003US20030022517 Method for making a sub 100 nanometer semiconductor device using conventional lithography steps
01/30/2003US20030022516 Method of manufacturing three-dimensional structure and method of manufacturing oscillator
01/30/2003US20030022515 Method and device of forming a film using a coating material and method of manufacturing a semiconductor device
01/30/2003US20030022514 Method of forming contacts for a bit line and a storage node in a semiconductor device
01/30/2003US20030022513 Polymer debris pre-cleaning method
01/30/2003US20030022512 Plasma etching method
01/30/2003US20030022511 Plasma ashing process
01/30/2003US20030022510 Process for planarization and recess etching of integrated circuits
01/30/2003US20030022509 Plasma treatment for copper oxide reduction
01/30/2003US20030022507 CVD TiSiN barrier for copper integration
01/30/2003US20030022506 Process for producing a semiconductor wafer
01/30/2003US20030022504 Toxic residual gas removal by non-reactive ion sputtering
01/30/2003US20030022502 Chemical mechanical polishing slurry containing abrasive particles exhibiting photocatalytic function
01/30/2003US20030022501 Method and apparatus for chemical mechanical polishing of semiconductor substrates
01/30/2003US20030022500 Alternative related to SAS in flash EEPROM
01/30/2003US20030022499 Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
01/30/2003US20030022498 CMP system and method for efficiently processing semiconductor wafers
01/30/2003US20030022497 Method of chemical mechanical polishing with high throughput and low dishing
01/30/2003US20030022496 Stencil mask and method of producing the same, semiconductor device produced using the stencil mask and method of producing the semiconductor device
01/30/2003US20030022495 Wafer manufacturing method, polishing apparatus , and wafer
01/30/2003US20030022494 Plasma etching process for metals and metal oxides relates inert to oxidation
01/30/2003US20030022493 Cooling the copper electrolyte solution to below room temperature to increase the rate of self annealing grain growth, reducing the final resistivity of the copper lines
01/30/2003US20030022491 Method of forming an aluminum film for use in manufacturing a semiconductor device
01/30/2003US20030022490 Semiconductor constructions, and methods of forming semiconductor constructions
01/30/2003US20030022489 Method of fabricating high melting point metal wiring layer, method of fabricating semiconductor device and semiconductor device
01/30/2003US20030022488 Method for forming a gate electrode in a semiconductor device
01/30/2003US20030022487 Barrier formation using novel sputter-deposition method
01/30/2003US20030022486 Method for preventing shorts between contact windows and metal lines
01/30/2003US20030022485 Methods for manufacturing semiconductor devices
01/30/2003US20030022484 Method of forming inter-dielectric layer in semiconductor device
01/30/2003US20030022483 Dielectric between metal structures and method therefor
01/30/2003US20030022482 Method of manufacturing a semiconductor device
01/30/2003US20030022481 Semiconductor device and method for fabricating the same
01/30/2003US20030022480 Method of doping copper metallization
01/30/2003US20030022479 Semiconductor device, a method of manufacturing the same and an electronic device
01/30/2003US20030022478 Semiconductor device using bumps, method for fabricating same, and method for forming bumps
01/30/2003US20030022477 Formation of electroplate solder on an organic circuit board for flip chip joints and board to board solder joints
01/30/2003US20030022476 Data bus architecture for integrated circuit devices having embedded dynamic random access memory (DRAM) with a large aspect ratio providing reduced capacitance and power requirements
01/30/2003US20030022475 Electrical connection between two surfaces of a substrate and method for producing same
01/30/2003US20030022474 Manufacture of semiconductor devices with schottky barriers
01/30/2003US20030022473 Method for manufacturing semiconductor device
01/30/2003US20030022472 Method to improve adhesion of dielectric films in damascene interconnects
01/30/2003US20030022471 Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same
01/30/2003US20030022470 Parallel, individually addressable probes for nanolithography
01/30/2003US20030022469 Semiconductor manufacturing method and semiconductor manufacturing apparatus
01/30/2003US20030022468 Manufacturing method of semiconductor device
01/30/2003US20030022467 Semiconductor device for fabricating the same
01/30/2003US20030022466 Structure and method for fabricating semiconductor structure and linearized monolithic power amplifier utilizing the formation of a compliant substrate for materials used to form the same
01/30/2003US20030022465 Method of separating semiconductor dies from a wafer
01/30/2003US20030022464 Transfer-molded power device and method for manufacturing transfer-molded power device
01/30/2003US20030022463 Use of membrane properties to reduce residual stress in an interlayer region
01/30/2003US20030022462 Stereolithographic method and apparatus for fabricating spacers for semiconductor devices and resulting structures
01/30/2003US20030022461 Amorphizing ion implant local oxidation of silicon (LOCOS) method for forming an isolation region
01/30/2003US20030022460 Semiconductor device fabricating method
01/30/2003US20030022459 Isolation region forming methods
01/30/2003US20030022458 Method for forming a shallow trench isolation in a semiconductor structure
01/30/2003US20030022457 Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbide
01/30/2003US20030022455 Device for the adjustment of circuits after packaging
01/30/2003US20030022454 Capacitor and method of manufacturing the same
01/30/2003US20030022453 Isolation structure and fabricating method therefor
01/30/2003US20030022452 High-voltage transistor and fabrication process
01/30/2003US20030022450 Method to form elevated source/drain using poly spacer
01/30/2003US20030022449 Method of manufacturing a semiconductor device having a trench isolation structure
01/30/2003US20030022448 Semiconductor device and method of manufacturing the same
01/30/2003US20030022447 Methods of fabricating electrically eraseable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates
01/30/2003US20030022446 Nonvolatile semiconductor memory device and manufacturing method thereof
01/30/2003US20030022445 Semiconductor integrated circuit device and a method of manufacturing the same
01/30/2003US20030022444 Semiconductor device having thin electrode laye adjacent gate insulator and method of manufacture
01/30/2003US20030022443 Double-bit non-volatile memory structure and corresponding method of manufacture
01/30/2003US20030022442 Method of planarizing non-volatile memory device
01/30/2003US20030022441 Twin MONOS array metal bit organization and single cell operation
01/30/2003US20030022440 Low defect density process for deep sub-0.18mum flash memory technologies
01/30/2003US20030022439 Method of fabricating flash memory device using self-aligned non-exposure pattern formation process
01/30/2003US20030022438 Dynamic threshold-voltage field effect transistors and methods
01/30/2003US20030022437 Method of forming integrated circuitry, method of forming a capacitor, method of forming DRAM integrated circuitry, integrated circuitry and DRAM integrated circuitry
01/30/2003US20030022436 Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors
01/30/2003US20030022435 Method for forming multiple gate oxide layer with the plasma oxygen doping
01/30/2003US20030022434 Semiconductor integrated circuit device and a method of manufacturing the same
01/30/2003US20030022433 Method for production of semiconductor device
01/30/2003US20030022432 Selective metal oxide removal
01/30/2003US20030022431 Structure including a monocrystalline perovskite oxide layer and method of forming the same
01/30/2003US20030022430 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
01/30/2003US20030022429 Electrode structure and method of fabricating the same