Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2003
03/20/2003US20030052377 Method of composite gate formation
03/20/2003US20030052376 Semiconductor device with high-k dielectric layer and method for manufacturing the same
03/20/2003US20030052375 Semiconductor device and method of manufacturing the same
03/20/2003US20030052374 Semiconductor device and method for fabricating the same
03/20/2003US20030052373 Field effect transistor formed on an insulating substrate and integrated circuit thereof
03/20/2003US20030052372 Capable of easily setting the sheet resistance of a resistive element or the like to an arbitrary value
03/20/2003US20030052371 Specific metal oxide semiconductor transistors with a gate insulation film thin enough to permit flow of tunnel current therein and which is adaptable for use with low power circuitry operable with low voltage of 2 volts or less
03/20/2003US20030052368 Input protection circuit
03/20/2003US20030052366 Semiconductor device and method of manufacturing same
03/20/2003US20030052365 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
03/20/2003US20030052364 Vertical dual gate field effect transistor
03/20/2003US20030052363 Non-volatile semiconductor memory with single layer gate structure
03/20/2003US20030052362 Semiconductor device
03/20/2003US20030052361 Triple self-aligned split-gate non-volatile memory device
03/20/2003US20030052360 EEPROM with split gate source side injection with sidewall spacers
03/20/2003US20030052359 Flash memory device and method for fabricating the same
03/20/2003US20030052358 Annealing a polysilicon substrate in nitric oxide to form an oxide layer, nitriding the oxide layer to form a nitride layer, and depositing the dielectric layer onto the nitride layer
03/20/2003US20030052357 Interlayer oxide containing thin films for high dielectric constant application
03/20/2003US20030052356 Platinum-rhodium stack as an oxygen barrier in an integrated circuit capacitor
03/20/2003US20030052354 Use of gate electrode workfunction to improve DRAM refresh
03/20/2003US20030052353 Semiconductor integrated circuit device and manufacturing method thereof
03/20/2003US20030052352 Semiconductor device and method of fabricating the same
03/20/2003US20030052350 Semiconductor device and method of manufacturing
03/20/2003US20030052348 Semiconductor device
03/20/2003US20030052347 Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET
03/20/2003US20030052342 Method for forming a pattern and a semiconductor device
03/20/2003US20030052341 Semiconductor integrated circuit device
03/20/2003US20030052339 Semiconductor device having a multilayer wiring structure and pad electrodes protected from corrosion, and method for fabricating the same
03/20/2003US20030052338 Dielectric layer for semiconductor device having less current leakage and increased capacitance
03/20/2003US20030052337 Thin film transistor and method for fabricating same
03/20/2003US20030052336 Electro-optical device and electronic equipment
03/20/2003US20030052335 Metal-insulator-metal capacitor and a method for producing same
03/20/2003US20030052333 Field effect transistor structure with self-aligned raised source/drain extensions
03/20/2003US20030052328 Group III nitride compound semiconductor light-emitting element
03/20/2003US20030052321 Polysilicon fet built on silicon carbide diode substrate
03/20/2003US20030052319 Fixture for multiple known good die processing
03/20/2003US20030052318 Fabrication method of blue light emitting ZnO thin film phosphor
03/20/2003US20030052308 A slurry for chemical mechanical polishing (CMP), containing alumina abrasive, aqueous ozone as oxidant with predetermined concentration and a benzotriazole as corrosion inhibitor
03/20/2003US20030052284 Lithographic apparatus, device manufacturing method, and device manufactured thereby
03/20/2003US20030052283 Ion implanting apparatus and sample processing apparatus
03/20/2003US20030052282 Wafer holding pin
03/20/2003US20030052279 Ultraviolet-light irradiation apparatus
03/20/2003US20030052176 Data processing system and data processing method
03/20/2003US20030052156 A soldering means having a curved exterior surface enclosing a first volume, and an interior cavity having a displacement constituting a second volume, useful for electrical and mechaincal connecting two metal planer surfaces
03/20/2003US20030052155 Universal ball attach manufacturing process
03/20/2003US20030052119 Heat treating method and heat treating apparatus
03/20/2003US20030052118 Heating member for combination heating and chilling apparatus, and methods
03/20/2003US20030052104 Laser processing apparatus
03/20/2003US20030052089 Etching methods, methods of removing portions of material, and methods of forming silicon nitride spacers
03/20/2003US20030052088 Method for increasing capacitance in stacked and trench capacitors
03/20/2003US20030052087 Plasma generating apparatus and SiO2 thin film etching method using the same
03/20/2003US20030052086 Etching method of organic insulating film
03/20/2003US20030052085 Control of power delivered to a multiple segment inject electrode
03/20/2003US20030052083 Treatment and evaluation of a substrate processing chamber
03/20/2003US20030052079 Etching of a specimen, such as a laminated film containing nickel iron alloy, at a high rate and temperature
03/20/2003US20030052039 Wafer Boat
03/20/2003US20030052001 Sputtering apparatus for forming a metal film using a magnetic field
03/20/2003US20030051995 Plating device and plating method
03/20/2003US20030051974 Automated semiconductor processing system
03/20/2003US20030051973 Automated system for handling and processing wafers within a carrier
03/20/2003US20030051972 Automated immersion processing system
03/20/2003US20030051912 Solder pads and method of making a solder pad
03/20/2003US20030051909 Ball grid array attaching means having improved reliability and method of manufacturing same
03/20/2003US20030051905 Method of mounting electronic component on substrate without generation of voids in bonding material
03/20/2003US20030051867 High heat flux heat sink and method of creating same
03/20/2003US20030051815 Vacuum processing apparatus and method for producing an object to be processed
03/20/2003US20030051814 Manufacturing apparatus of a semiconductor device having a sensing system
03/20/2003US20030051813 Recycling apparatus
03/20/2003US20030051812 Method and apparatus for polishing a substrate
03/20/2003US20030051811 Plasma resistant member
03/20/2003US20030051745 Substrate aspiration assembly
03/20/2003US20030051743 Rotating the container on a rotor; spraying with a solution of a metal removing agent, especially a chelating agent; rinsing and drying
03/20/2003US20030051742 Method and apparatus for treating a substrate with an ozone-solvent solution II
03/20/2003US20030051741 Method and apparatus for cleaning substrates using liquid carbon dioxide
03/20/2003US20030051665 High temperature ceramic heater assembly with rf capability
03/20/2003US20030051662 Thermal reactor for transport polymerization of low epsilon thin film
03/20/2003US20030051657 Vacancy, dominated, defect-free silicon
03/20/2003US20030051656 Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
03/20/2003US20030051413 Silicon dioxide or aluminum oxide abrasive; polyether; citric acid, oxalic acid, tartaric acid, glycine, alpha -alanine or histidine accelerant; benzotriazole, benzimidazole, triazole, imidazole or tolyltriazole stabilizer; H2O2 and water
03/20/2003US20030051366 Centrifugal dryer, manufacturing method for semiconductor device and semiconductor manufacturing apparatus
03/20/2003US20030051364 Method and apparatus for positioning a wafer chuck
03/20/2003US20030051324 Method of manufacturing ferroelectric capacitor
03/20/2003DE10162597C1 Polished semiconductor disc manufacturing method uses polishing between upper and lower polishing plates
03/20/2003DE10159020C1 Power semiconductor circuit device incorporating function monitoring circuit within power semiconductor control circuit
03/20/2003DE10123686C1 Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines Speicherchips und dadurch hergestelltes elektronische Bauelement A method of manufacturing an electronic component, especially a memory chip, and thereby prepared electronic component
03/20/2003CA2776343A1 Sensor substrate and method of fabricating same
03/20/2003CA2459908A1 Apparatus with compliant electrical terminals, and methods for forming same
03/20/2003CA2459902A1 Method for trimming resistors
03/20/2003CA2459763A1 Method of manufacturing optical devices and related improvements
03/20/2003CA2459386A1 Semiconductor device with compliant electrical terminals, apparatus including the semiconductor device, and methods for forming same
03/20/2003CA2454898A1 Electromechanical memory having cell selection circuitry constructed with nanotube technology
03/20/2003CA2454845A1 Nanotube films and articles
03/19/2003EP1294217A1 Method of mounting electronic part
03/19/2003EP1294094A2 Programmable logic device including multipliers and configurations thereof to reduce resource utilization
03/19/2003EP1294027A2 Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same
03/19/2003EP1294026A2 Method for adjusting ultra-thin SOI MOS transistor threshold voltages
03/19/2003EP1294025A2 Scr electrostatic discharge protection for integrated circuits
03/19/2003EP1294021A1 Capacitor device for a semiconductor circuit arrangement and method for making the same
03/19/2003EP1294020A2 Improvements in contact resistances in integrated circuits
03/19/2003EP1294019A1 Process of manufacturing a semiconductor structure using a protective layer and semiconductor structure
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