| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 07/15/2003 | US6593637 Method for establishing component isolation regions in SOI semiconductor device |
| 07/15/2003 | US6593634 Semiconductor device and method of manufacturing the same |
| 07/15/2003 | US6593633 Method and device for improved salicide resistance on polysilicon gates |
| 07/15/2003 | US6593632 Interconnect methodology employing a low dielectric constant etch stop layer |
| 07/15/2003 | US6593631 Method of fabricating semiconductor device |
| 07/15/2003 | US6593629 Semiconductor device |
| 07/15/2003 | US6593628 Semiconductor device and method of manufacturing same |
| 07/15/2003 | US6593627 SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein |
| 07/15/2003 | US6593626 Electro-optical device, method for making the same, and electronic apparatus |
| 07/15/2003 | US6593625 Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
| 07/15/2003 | US6593623 Reduced channel length lightly doped drain transistor using a sub-amorphous large tilt angle implant to provide enhanced lateral diffusion |
| 07/15/2003 | US6593620 Trench DMOS transistor with embedded trench schottky rectifier |
| 07/15/2003 | US6593619 High voltage power MOSFET having low on-resistance |
| 07/15/2003 | US6593618 MIS semiconductor device having an elevated source/drain structure |
| 07/15/2003 | US6593617 Field effect transistors with vertical gate side walls and method for making such transistors |
| 07/15/2003 | US6593616 Buried bit line memory circuitry |
| 07/15/2003 | US6593615 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD |
| 07/15/2003 | US6593614 Integrated circuit configuration having at least one transistor and one capacitor, and method for fabricating it |
| 07/15/2003 | US6593612 Structure and method for forming a body contact for vertical transistor cells |
| 07/15/2003 | US6593611 Electrical and electronic apparatus comprising substrates having diffusion layers connected to cell plate electrode films formed on cylindrical storage electrodes; high aspect ratio |
| 07/15/2003 | US6593610 Memory cell arrays |
| 07/15/2003 | US6593609 Semiconductor memory device |
| 07/15/2003 | US6593608 Magneto resistive storage device having double tunnel junction |
| 07/15/2003 | US6593606 Staggered bitline strapping of a non-volatile memory cell |
| 07/15/2003 | US6593604 Electrical and electronic apparatus comprising multilayer emitters and electrodes, used for power amplification |
| 07/15/2003 | US6593601 Integrated circuit device that can suppress undesired inter-device effects |
| 07/15/2003 | US6593594 Silicon carbide n-channel power LMOSFET |
| 07/15/2003 | US6593593 Transparent electrode comprising ZnO and a film with a melting point lower than that of ZnO |
| 07/15/2003 | US6593592 Semiconductor device having thin film transistors |
| 07/15/2003 | US6593591 Thin film device provided with coating film, liquid crystal panel and electronic device, and method the thin film device |
| 07/15/2003 | US6593585 Optical apparatus comprising lenses, masking and substrate holders, light sources and mirrors for shaping and focusing radiation beams |
| 07/15/2003 | US6593584 Multi-beam lithography apparatus with mutually different beam limiting apertures |
| 07/15/2003 | US6593583 Ion beam processing position correction method |
| 07/15/2003 | US6593581 Object carrier for a particle-optical apparatus |
| 07/15/2003 | US6593545 Laser defined pads for flip chip on leadframe package fabrication method |
| 07/15/2003 | US6593484 Forming tantalum nitride film as barrier film by chemical vapor deposition |
| 07/15/2003 | US6593450 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers |
| 07/15/2003 | US6593446 Copolymer comprising styrene and 3,3-alkoxypropene derivative monomers; light absorber; semiconductors |
| 07/15/2003 | US6593441 Photosensitive polymer and chemically amplified photoresist composition containing the same |
| 07/15/2003 | US6593282 Cleaning solutions for semiconductor substrates after polishing of copper film |
| 07/15/2003 | US6593254 Method for clamping a semiconductor device in a manufacturing process |
| 07/15/2003 | US6593253 Method of manufacturing semiconductor device |
| 07/15/2003 | US6593252 Film deposition method and apparatus |
| 07/15/2003 | US6593251 Method to produce a porous oxygen-silicon layer |
| 07/15/2003 | US6593250 Fabrication method of semiconductor device using low-k film |
| 07/15/2003 | US6593248 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| 07/15/2003 | US6593247 Method of depositing low k films using an oxidizing plasma |
| 07/15/2003 | US6593246 Process for producing semiconductor device |
| 07/15/2003 | US6593245 Silicon nitride etch process with critical dimension gain |
| 07/15/2003 | US6593244 Process for etching conductors at high etch rates |
| 07/15/2003 | US6593243 Method of manufacturing semiconductor device |
| 07/15/2003 | US6593242 Process for planarization and recess etching of integrated circuits |
| 07/15/2003 | US6593241 Method of planarizing a semiconductor device using a high density plasma system |
| 07/15/2003 | US6593240 Two step chemical mechanical polishing process |
| 07/15/2003 | US6593239 Chemical mechanical polishing method useful for copper substrates |
| 07/15/2003 | US6593238 Method for determining an endpoint and semiconductor wafer |
| 07/15/2003 | US6593237 Method for manufacturing a low dielectric constant stop layer for integrated circuit interconnects |
| 07/15/2003 | US6593236 Method of forming a metal wiring in a semiconductor device with copper seed |
| 07/15/2003 | US6593235 Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| 07/15/2003 | US6593234 Methods of utilizing metal rich silicide in forming semiconductor constructions |
| 07/15/2003 | US6593233 Semiconductor device and method for manufacturing the same |
| 07/15/2003 | US6593232 Plasma etch method with enhanced endpoint detection |
| 07/15/2003 | US6593231 Process of manufacturing electron microscopic sample and process of analyzing semiconductor device |
| 07/15/2003 | US6593230 Method of manufacturing semiconductor device |
| 07/15/2003 | US6593229 Semiconductor integrated circuit device and method for manufacturing the same |
| 07/15/2003 | US6593228 Method of fabricating a patterned metal-containing layer on a semiconductor wafer |
| 07/15/2003 | US6593227 Method and apparatus for planarizing surfaces of semiconductor device conductive layers |
| 07/15/2003 | US6593226 Method for adding features to a design layout and process for designing a mask |
| 07/15/2003 | US6593225 Method of forming a stacked dielectric layer on a semiconductor substrate having metal patterns |
| 07/15/2003 | US6593223 Method of forming dual damascene structure |
| 07/15/2003 | US6593222 Method to improve the reliability of thermosonic gold to aluminum wire bonds |
| 07/15/2003 | US6593221 Selective passivation of exposed silicon |
| 07/15/2003 | US6593220 Elastomer plating mask sealed wafer level package method |
| 07/15/2003 | US6593219 Method for fabricating electrode structure and method for fabricating semiconductor device |
| 07/15/2003 | US6593217 Method of manufacturing semiconductor device |
| 07/15/2003 | US6593216 Method for producing semiconductor device |
| 07/15/2003 | US6593215 Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device |
| 07/15/2003 | US6593214 Method of manufacturing semiconductor device |
| 07/15/2003 | US6593213 Synthesis of layers, coatings or films using electrostatic fields |
| 07/15/2003 | US6593212 Method for making electro-optical devices using a hydrogenion splitting technique |
| 07/15/2003 | US6593211 Semiconductor substrate and method for producing the same |
| 07/15/2003 | US6593210 Self-aligned/maskless reverse etch process using an inorganic film |
| 07/15/2003 | US6593208 Method of uniform polish in shallow trench isolation process |
| 07/15/2003 | US6593207 Method of forming a trench device isolation structure with upper liner pattern |
| 07/15/2003 | US6593206 Isolation region forming methods |
| 07/15/2003 | US6593205 Patterned SOI by formation and annihilation of buried oxide regions during processing |
| 07/15/2003 | US6593204 Method of fabricating a silicon-on-insulator system with thin semiconductor islets surrounded by an insulative material |
| 07/15/2003 | US6593203 Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contacts |
| 07/15/2003 | US6593202 Semiconductor memory device and fabrication method thereof |
| 07/15/2003 | US6593201 Monolithic inductance-enhancing integrated circuits, complementary metal oxide semiconductor (CMOS) inductance-enhancing integrated circuits, inductor assemblies, and inductance-multiplying methods |
| 07/15/2003 | US6593200 Method of forming an integrated inductor and high speed interconnect in a planarized process with shallow trench isolation |
| 07/15/2003 | US6593199 Method of manufacturing a semiconductor component and semiconductor component thereof |
| 07/15/2003 | US6593198 Semiconductor device and method for fabricating the same |
| 07/15/2003 | US6593197 Sidewall spacer based fet alignment technology |
| 07/15/2003 | US6593196 Methods of forming a transistor gate |
| 07/15/2003 | US6593195 Stable memory device that utilizes ion positioning to control state of the memory device |
| 07/15/2003 | US6593194 Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same |
| 07/15/2003 | US6593193 Semiconductor device and method for fabricating the same |
| 07/15/2003 | US6593192 Method of forming a dual-gated semiconductor-on-insulator device |
| 07/15/2003 | US6593191 Buried channel strained silicon FET using a supply layer created through ion implantation |