| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 01/29/2014 | CN103545259A Method of removing PMOS replacement gate of CMOS transistor |
| 01/29/2014 | CN103545258A Cmos晶体管及其形成方法 Cmos transistor and method of forming |
| 01/29/2014 | CN103545257A Production method of Complementary Metal-Oxide-Semiconductor (CMOS) transistor |
| 01/29/2014 | CN103545256A Method for forming CMOS (complementary metal oxide semiconductor) device |
| 01/29/2014 | CN103545255A Manufacturing method of semiconductor devices |
| 01/29/2014 | CN103545254A Laser processing method for wafer |
| 01/29/2014 | CN103545253A Laser processing method for wafer |
| 01/29/2014 | CN103545252A Array substrate and manufacturing method thereof and liquid crystal display device |
| 01/29/2014 | CN103545251A Method for forming semiconductor device |
| 01/29/2014 | CN103545250A Self-aligned via interconnect using relaxed patterning exposure |
| 01/29/2014 | CN103545249A Method of forming post passivation interconnects |
| 01/29/2014 | CN103545248A Methods of manufacturing semiconductor devices |
| 01/29/2014 | CN103545247A Method for manufacturing metal plug and application of metal plug to phase-change random access memory |
| 01/29/2014 | CN103545246A Forming method of semiconductor structure |
| 01/29/2014 | CN103545245A 半导体结构的形成方法及处理方法 The method for forming a semiconductor structure and processing methods |
| 01/29/2014 | CN103545244A Manufacturing method of damascene structure |
| 01/29/2014 | CN103545243A Method for forming shallow trench isolation structure |
| 01/29/2014 | CN103545242A Sealed shallow trench isolation region and forming method thereof |
| 01/29/2014 | CN103545241A Shallow trench isolation manufacturing method |
| 01/29/2014 | CN103545240A 夹具 Fixture |
| 01/29/2014 | CN103545239A Epitaxial wafer stripping process based on films |
| 01/29/2014 | CN103545238A Tape expanding apparatus |
| 01/29/2014 | CN103545237A Electrostatic chuck component and plasma device provided with same |
| 01/29/2014 | CN103545236A Automatic aligning mechanism of chip packing machine, chip packing machine including automatic aligning mechanism and automatic aligning method |
| 01/29/2014 | CN103545235A Mechanical arm locating method and system |
| 01/29/2014 | CN103545234A Lifting device, semiconductor chip production metal etching equipment and method |
| 01/29/2014 | CN103545233A Solar silicon wafer manufacturing procedure basket |
| 01/29/2014 | CN103545232A Temperature control system and method for semiconductor heat treatment equipment, and equipment applying system |
| 01/29/2014 | CN103545231A Nickel erosion flaw on-line detection method |
| 01/29/2014 | CN103545230A Method for monitoring defect detection rate of electron beam scanner |
| 01/29/2014 | CN103545229A Method for monitoring defect detection rate of electron beam scanner |
| 01/29/2014 | CN103545228A Endpoint detecting method, program and substrate processing apparatus |
| 01/29/2014 | CN103545227A Method for monitoring phosphorus concentration of phosphorus silicon glass layers in semiconductor devices |
| 01/29/2014 | CN103545226A Wafer-level semiconductor device and method for packaging same |
| 01/29/2014 | CN103545225A Electronic element encapsulation structure and method |
| 01/29/2014 | CN103545224A Resin molding machine and method of resin molding |
| 01/29/2014 | CN103545223A Method of manufacturing semiconductor device |
| 01/29/2014 | CN103545222A High-reliability soft-medium circuit addition manufacturing method |
| 01/29/2014 | CN103545221A Metallic oxide thin film transistor and preparation method thereof |
| 01/29/2014 | CN103545220A Method for manufacturing drifting region of transverse power device |
| 01/29/2014 | CN103545219A Manufacturing method of drift region of semiconductor device |
| 01/29/2014 | CN103545218A Pocket counterdoping for gate-edge diode leakage reduction |
| 01/29/2014 | CN103545217A Method for fabricating semiconductor device |
| 01/29/2014 | CN103545216A Method of forming trench gate mosfet |
| 01/29/2014 | CN103545215A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545214A Production method of DMOS device |
| 01/29/2014 | CN103545213A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545212A Production method of semiconductor device |
| 01/29/2014 | CN103545211A Production method of semiconductor device |
| 01/29/2014 | CN103545210A Deeply depleted channel field effect transistor and manufacturing method thereof |
| 01/29/2014 | CN103545209A Method for forming high-K metal gate device |
| 01/29/2014 | CN103545208A Semiconductor device manufacturing method |
| 01/29/2014 | CN103545207A Semiconductor device manufacturing method |
| 01/29/2014 | CN103545206A Metal Oxide Semiconductor (MOS) device and forming method thereof |
| 01/29/2014 | CN103545205A Floating-gate transistor manufacturing method |
| 01/29/2014 | CN103545204A Production method of P-channel Metal Oxide Semiconductor (PMOS) transistor |
| 01/29/2014 | CN103545203A Floating-gate transistor manufacturing method |
| 01/29/2014 | CN103545202A P-channel Metal Oxide Semiconductor (PMOS) transistor and forming method thereof |
| 01/29/2014 | CN103545201A Carbon layer and method of manufacture |
| 01/29/2014 | CN103545200A Transistor and formation method of same |
| 01/29/2014 | CN103545199A Method used for thick metal etching of power device |
| 01/29/2014 | CN103545198A Semiconductor passivation layer processing method |
| 01/29/2014 | CN103545197A Tube-type PECVD double-layer silicon nitride film preparation process |
| 01/29/2014 | CN103545196A Manufacturing method of metal interconnecting wires |
| 01/29/2014 | CN103545195A Substrate and method for preparing the fracture of a substrate for at least a power semiconductor device |
| 01/29/2014 | CN103545194A Manufacturing method for shield grid structure of radiofrequency power VDMOSFET (vertical double-diffused metal-oxide semiconductor field-effect transistor) |
| 01/29/2014 | CN103545193A Method for forming fine pattern of semiconductor device using double spacer patterning technology |
| 01/29/2014 | CN103545192A Semiconductor structure and method for manufacturing nonvolatile semiconductor structure |
| 01/29/2014 | CN103545191A Gate structure forming method, semiconductor device forming method and semiconductor device |
| 01/29/2014 | CN103545190A Gate structure forming method, semiconductor device forming method and semiconductor device |
| 01/29/2014 | CN103545189A Gate structure, semiconductor device and forming method of both |
| 01/29/2014 | CN103545188A Production method of semiconductor device |
| 01/29/2014 | CN103545187A Method for manufacturing metal gate semiconductor device |
| 01/29/2014 | CN103545186A Method for manufacturing metal gate semiconductor device |
| 01/29/2014 | CN103545185A Method of producing semiconductor device by pseudo-gate |
| 01/29/2014 | CN103545184A Metal gate, forming method thereof and CMOS (complementary metal oxide semiconductor) transistor |
| 01/29/2014 | CN103545183A Complementary Metal-Oxide-Semiconductor (CMOS) device and production method thereof |
| 01/29/2014 | CN103545182A Low work function metal gate formation method |
| 01/29/2014 | CN103545181A Method for using dummy grids to manufacture semiconductor device |
| 01/29/2014 | CN103545180A Formation method of metal gate |
| 01/29/2014 | CN103545179A Semiconductor device and forming method thereof |
| 01/29/2014 | CN103545178A Formation method of metal gate |
| 01/29/2014 | CN103545177A Novel mask and using method of ion implanter |
| 01/29/2014 | CN103545176A Methods for introducing carbon to a semiconductor structure and structures formed thereby |
| 01/29/2014 | CN103545175A Semiconductor device and manufacturing method of same |
| 01/29/2014 | CN103545174A Photoetching focusing parameter testing method and system |
| 01/29/2014 | CN103545173A Manufacturing method for sapphire template with large-area nanometer patterns |
| 01/29/2014 | CN103545172A Method of preventing medium cracks at cuts of microwave internally-matched capacitors |
| 01/29/2014 | CN103545171A Method of removing surface protection material from high-power device |
| 01/29/2014 | CN103545170A Semiconductor device and production method thereof |
| 01/29/2014 | CN103545169A Method for preventing wafer from buckling deformation |
| 01/29/2014 | CN103545168A Adhesive tape, adhesive tape joining method and adhesive tape joining apparatus |
| 01/29/2014 | CN103543613A Moving-iron cableless six-freedom-of-degree magnetic levitation moving platform |
| 01/29/2014 | CN103543611A Lithography process |
| 01/29/2014 | CN103543566A Pixel structure and fabrication method thereof |
| 01/29/2014 | CN103540973A Electrogilding liquid for heat sinks of chips and circuit boards and use method |
| 01/29/2014 | CN103540935A Gold-plating method of high silicon-aluminum composite material |
| 01/29/2014 | CN103540908A Method of depositing silicone dioxide films |
| 01/29/2014 | CN103540894A Titanium nitride film preparation method and system |
| 01/29/2014 | CN103540322A Etching solution and method for metal barrier layers |