Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2014
01/30/2014US20140027859 Methods of forming transistor devices with high-k insulation layers and the resulting devices
01/30/2014US20140027849 Ldmos device and method for improved soa
01/30/2014US20140027841 High voltage field balance metal oxide field effect transistor (fbm)
01/30/2014US20140027840 Termination design for high voltage device
01/30/2014US20140027838 Semiconductor device and method for manufacturing the same
01/30/2014US20140027822 Copper Contact Plugs with Barrier Layers
01/30/2014US20140027821 Device performance enhancement
01/30/2014US20140027820 Forming facet-less epitaxy with self-aligned isolation
01/30/2014US20140027819 Corner layout for high voltage semiconductor devices
01/30/2014US20140027817 Hybrid transistor
01/30/2014US20140027815 Fast Turn On Silicon Controlled Rectifiers for ESD Protection
01/30/2014US20140027813 Method of forming a semiconductor device having a patterned gate dielectric and structure therefor
01/30/2014US20140027793 Active matrix substrate, electro-optical device, and electronic device
01/30/2014US20140027790 Aggregation of semiconductor devices and the method thereof
01/30/2014US20140027783 Semiconductor device and method of manufacturing the same
01/30/2014US20140027782 Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices
01/30/2014US20140027773 Semiconductor Device Including a Diode and Method of Manufacturing a Semiconductor Device
01/30/2014US20140027772 Wafers and Chips Comprising Test Structures
01/30/2014US20140027766 METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL LAYER, ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE
01/30/2014US20140027717 Pixel control structure, array, backplane, display, and method of manufacturing
01/30/2014US20140027710 Quantum dot and nanowire synthesis
01/30/2014US20140027709 Method and structure for receiving a micro device
01/30/2014US20140027705 Memristor cell structures for high density arrays
01/30/2014US20140027700 Memristor with embedded switching layer
01/30/2014US20140027245 Clamping mechanism and carrying device and transferring apparatus with the same
01/30/2014US20140027058 Cmos with channel p-finfet and channel n-finfet having different crystalline orientations and parallel fins
01/30/2014US20140026923 Method For Cleaning Wafers Using a Polycarboxylate Solution
01/30/2014US20140026431 Underfill material dispensing for stacked semiconductor chips
01/30/2014DE112012001855T5 Komplementärer bipolarer Inverter Complementary bipolar inverter
01/30/2014DE112012001824T5 Ineinandergreifender, vertikaler, nativer Kondensator A mating, vertical, native capacitor
01/30/2014DE112012001822T5 Siliciumgesteuerter Gleichrichter mit anpassbarer Auslösespannung mit Verspannungsunterstützung Silicon-controlled rectifier with adjustable trigger voltage with bracing support
01/30/2014DE112012001453T5 Siliziumkarabidsubstrat Siliziumkarabidsubstrat
01/30/2014DE112012000601T5 Verfahren zum Herstellen einer Halbleitervorrichtung sowie Halbleitervorrichtung A method of manufacturing a semiconductor device and semiconductor device
01/30/2014DE102013214915A1 Verdrahtungseinrichtung zum Verdrahten einer elektronischen Vorrichtung Wiring device for wiring an electronic device
01/30/2014DE102013214649A1 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
01/30/2014DE102013214410A1 Erfassen anomal schwacher BEOL-Stellen in einem Metallisierungssystem Detecting abnormally weak spots in a BEOL metallization
01/30/2014DE102013108148A1 Elektrische Vorrichtungspackung mit einem Laminat und Verfahren zur Herstellung einer elektrischen Vorrichtungspackung mit einem Laminat An electrical device package having a laminate and process for the preparation of an electrical device package having a laminate
01/30/2014DE102013108056A1 Substrate transport system has rail group having segments in which substrate is located, so that surface tensions of substrate are changed, when substrate passes from primary segment to secondary segment of rail group
01/30/2014DE102013107956A1 Laterale Halbleitervorrichtung und Verfahren zu ihrer Herstellung Lateral semiconductor device and process for their preparation
01/30/2014DE102013107784A1 Herstellung von Haftstrukturen in dielektrischen Schichten unter Nutzung von Photoprozesstechnologie und Haftstrukturen einschließende Bauelemente Production of adhesive structures in dielectric layers with the use of Photo Process Technology and adhesive structures enclosing components
01/30/2014DE102013107761A1 Halbleitervorrichtung mit einer Diode und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device comprising a diode and method of manufacturing a semiconductor device
01/30/2014DE102013107758A1 Halbleitervorrichtung mit einer dielektrischen Struktur in einem Trench A semiconductor device having a dielectric structure in a trench
01/30/2014DE102013107591A1 Wafer und Chips mit Teststrukturen Wafers and chips with test structures
01/30/2014DE102013104014A1 Verfahren zur Herstellung eines integrierten Halbleiter-Schaltkreises A process for producing a semiconductor integrated circuit
01/30/2014DE102013012549A1 Verfahren zum Vortexturieren einer chemisch-mechanischen Polierschicht A method for Vortexturieren a chemical mechanical polishing layer
01/30/2014DE102012213309A1 Verfahren zum Herstellen eines Leuchtbands und Leuchtband A method of manufacturing a light-emitting and light-strip bands
01/30/2014DE102012213077A1 Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage A method for contacting a semiconductor material with a contact position
01/30/2014DE102012109240A1 Method for manufacturing structural element i.e. mask layer, on surface of semiconductor body, involves producing two auxiliary layers, and selectively removing area of one of auxiliary layers, where area is covered by another one of layers
01/30/2014DE102012106818A1 Method for contacting optoelectronic components, involves equipping crimping tool with crimping contact, and performing crimping operation such that an electrical contact between connection conductor and connecting element is produced
01/30/2014DE102012106815A1 Method for contacting of optoelectronic components involves closing aperture in contact region according to electrical contact of electrical contact region and optoelectronic components
01/30/2014DE102012106812A1 Casting of optoelectronic component e.g. light-emitting diode, involves applying composition comprising crosslinkable silicone compound to optoelectronic component, irradiating with ultraviolet radiation, and curing coated composition
01/30/2014DE102012106796A1 Device useful for thermal treatment of a semiconductor substrate, comprises susceptor, which forms the base of a process chamber and comprises substrate support base, substrate support ring and heat source
01/30/2014DE102012014812A1 Vorrichtung zum Testen von Wafern An apparatus for testing of wafers
01/30/2014DE102009021484B4 Höhere Gleichmäßigkeit einer Kanalhalbleiterlegierung durch Herstellen von STI-Strukturen nach dem Aufwachsprozess Higher uniformity of a channel semiconductor alloy by preparing STI structures after the growth process
01/30/2014DE102007004862B4 Verfahren zur Herstellung von Si-Ge enthaltenden Drain/Source-Gebieten in Transistoren mit geringerem Si/Ge-Verlust Process for the preparation of Si-Ge-containing drain / source regions in transistors with a lower Si / Ge-loss
01/30/2014DE102006030265B4 Verfahren zum Verbessern der Planarität einer Oberflächentopographie in einer Mikrostruktur A method for improving the planarity of a surface topography in a microstructure
01/30/2014DE102005046973B4 Struktur und Verfahren zum gleichzeitigen Bestimmen einer Überlagerungsgenauigkeit und eines Musteranordnungsfehlers Structure and method for simultaneously determining an overlay accuracy and a pattern arrangement error
01/30/2014CA2822132A1 Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices
01/29/2014EP2690938A1 Method for forming copper wiring, method for manufacturing wiring substrate, and wiring substrate
01/29/2014EP2690937A1 Method for forming copper wiring, method for manufacturing wiring substrate, and wiring substrate
01/29/2014EP2690658A1 Power semiconductor module and power unit device
01/29/2014EP2690655A2 Method for making via holes
01/29/2014EP2690654A2 Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
01/29/2014EP2690653A2 High temperature ion implantation of nitride based HEMTS
01/29/2014EP2690652A2 Polishing apparatus
01/29/2014EP2690651A1 Apparatus and method for manufacturing a light-emitting device using a neutral particle beam
01/29/2014EP2690650A1 Laminate for forming fine pattern, and method for producing laminate for forming fine pattern
01/29/2014EP2690497A1 Polymer-containing developer
01/29/2014EP2690496A1 Method for measuring distortion of projection objective
01/29/2014EP2690193A1 Method for cleaning gas conveying device, and method and reaction device for film growth
01/29/2014EP2690162A1 Equipment for treating gases and use of said equipment for treating a synthesis gas contaminated with tars
01/29/2014EP2690146A1 Adhesive tape for processing semiconductor wafer and the like
01/29/2014EP2689464A2 Conductive paste composition and semiconductor devices made therewith
01/29/2014EP2689453A1 Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
01/29/2014EP2689452A2 Apparatus for measuring impurities on wafer and method of measuring impurities on wafer
01/29/2014EP2689451A1 P-/metal floating gate non-volatile storage element
01/29/2014EP2689450A1 Functional liquid ejection apparatus, functional liquid ejection method and imprinting system
01/29/2014EP2689292A1 Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks
01/29/2014EP2688942A2 Aromatic polyamide films for transparent flexible substrates
01/29/2014EP2573508B1 Solder height detection method and solder height detection device
01/29/2014EP1438744B1 Method of forming a raised contact for a substrate
01/29/2014EP1195801B1 Process for plasma treating an isolation layer with low permittivity
01/29/2014CN203415606U Solar cell silicon wafer pushing device
01/29/2014CN203415578U Low-cost nonvolatile memory body with single polycrystalline structure and without lightly doped region
01/29/2014CN203415560U Silicon wafer texturing machine diskharging bench
01/29/2014CN203415559U A conveying apparatus for semiconductor manufacturing technology
01/29/2014CN203415558U Solar cell silicon wafer cleaning carrier
01/29/2014CN203415557U Packaging substrate peeling device and substrate peeling cutter thereof
01/29/2014CN203415556U Crashproof cabinet for wafer feeding
01/29/2014CN203415555U Baking box with fool-proof mechanism
01/29/2014CN203415554U Filling tool assistance device for thyristor chip layers
01/29/2014CN203415553U Semiconductor structure
01/29/2014CN203409672U 齿条夹具 Rack fixture
01/29/2014CN103548430A Electronic component mounting method, electronic component loading device and electronic component mounting system
01/29/2014CN103548263A 半导体装置 Semiconductor device
01/29/2014CN103548166A Method for producing protein semiconductor
01/29/2014CN103548158A Method for manufacturing light-emitting element, and light-emitting element
01/29/2014CN103548154A Semiconductor devices and fabrication methods
01/29/2014CN103548147A Lateral semiconductor device
01/29/2014CN103548146A Dual active layers for semiconductor devices and methods of manufacturing the same