Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2007
03/22/2007US20070062033 Selective consolidation methods for fabricating semiconductor device components and conductive features thereof
03/22/2007DE19913355B4 Integrierte opto-elektronische Schaltung mit ZnO-Schicht als Lichtwellenleiter Integrated opto-electronic circuit with ZnO layer as an optical waveguide
03/22/2007DE19817311B4 Herstellungsverfahren für mikromechanisches Bauelement A method for producing a micro mechanical component
03/22/2007DE19739547B4 Leistungs-Mosfet mit Heteroübergang und Verfahren für dessen Herstellung Power MOSFET with heterojunction and method for its preparation
03/22/2007DE112005000729T5 Halbleiterbauelement mit einer lateral modulierten Gate-Austrittsarbeit und Herstellungsverfahren A semiconductor device having a laterally modulated gate work function and manufacturing processes
03/22/2007DE112005000335T5 Veritkaler und gemeinsamer Drain für komplementäre Nitridtransistoren Veritkaler and common drain for complementary Nitridtransistoren
03/22/2007DE112004002640T5 Damaszener-Tri-Gate-FinFET Damascene tri-gate FinFET
03/22/2007DE10394269T5 Schaltventilanordnung Switching valve assembly
03/22/2007DE10329644B4 Anordnung zum Zu-oder Abführen von Wärme zu/von einem Halbleitersubstrat zur Vorbereitung oder Nachbearbeitung eines lithographischen Projektionsschrittes, dessen Verfahren sowie die Verwendung Arrangement for supply or removal of heat to / from a semiconductor substrate in preparation or post a lithographic projection step, the process and the use
03/22/2007DE10317329B4 Vorrichtung und Verfahren zum Reinigen eines Halbleiterwafers Device and method for cleaning a semiconductor wafer
03/22/2007DE10311575B4 Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis A method of electrolytic plating of workpieces with holes with a high aspect ratio
03/22/2007DE10255865B4 Verfahren zum Ätzen von Kontaktlöchern mit geringem Durchmesser A method for etching contact holes with a small diameter
03/22/2007DE10229642B4 Verfahren zum lokalen Erhitzen eines in einem Halbleitersubstrat angeordneten vergrabenen Bereichs A method for locally heating an object arranged in a semiconductor substrate buried region
03/22/2007DE10210233B4 Neues Integrationsverfahren zur Ausbildung erhöhter Kontakte für Sub-150nm Bauelemente New integration method for forming an elevated contacts for sub-150nm devices
03/22/2007DE10209493B4 Verfahren zur Vermeidung von Kontamination auf optischen Elementen, Vorrichtung zur Regelung von Kontamination auf optischen Elementen und EUV-Lithographievorrichtung Method to prevent contamination on optical elements, means for control of contamination on optical elements and EUV lithography apparatus
03/22/2007DE102006040479A1 Gruppe III-Nitrid Halbleiterdünnfilm, Verfahren zu dessen Herstellung sowie Gruppe III-Nitrid Halbleiterleuchtvorrichtung Group III nitride semiconductor thin film, method for its production as well as group III nitride semiconductor light-emitting device
03/22/2007DE102006040281A1 Eingebettete Flash-Speichervorrichtungen auf SOI-Substraten und Verfahren der Anfertigung derselben Embedded flash memory devices on SOI substrates and methods of making the same
03/22/2007DE102006035031A1 Verfahren zum Bearbeiten eines Halbleiterwafers A method of processing a semiconductor wafer
03/22/2007DE102006018139A1 Transskriptionseinrichtung Transskriptionseinrichtung
03/22/2007DE102006001429A1 Semiconductor component functional unit and production process has rows and columns of chips on a connection plate and a multi-layer wiring structure insulated by a hybrid organic-inorganic polymer dielectric
03/22/2007DE102005046624B3 Production of semiconductor arrangement with formation of conductive substrate, structural element region (SER) layer for insulating SER from substrate useful in semiconductor technology, e.g. in production of DMOS-field effect transistors
03/22/2007DE102005045704A1 Verfahren und Vorrichtung zur Bearbeitung von Substraten, insbesondere Solarzellen Method and apparatus for processing substrates, in particular solar cells
03/22/2007DE102005045060A1 Multi-layer integrated circuit includes substrate with stacked circuit planes and integrates high quality passive components in its three-dimensional structure
03/22/2007DE102005042827A1 High-voltage FET with source drain gate and channel has doped drift region having potential barrier spaced from the body region
03/22/2007DE102005041886B3 Production of semiconductor element, e.g. for use in mobile telephones, includes forming projections of differing elasticity modulus by selective illumination of photopolymerizable compositions
03/22/2007DE102005040781A1 Sensor and production process especially for pressure measurement as in a tire has housing with micro-mechanical sensor, evaluation element and a carrier in the housing
03/22/2007DE102005038956B3 Coating wafer level package structure with semiconductor chip comprises applying coating particles on substrate, electrostatic charging of substrate and particles, and liquefying particles by heating coating particles surface
03/22/2007DE102005038260B3 Semiconductor component and production process for high current or voltage devices has front and rear contacts and divided edge zone around cell field region
03/22/2007DE102004058702B4 Verfahren für die Kalibration der Greifachse des Bondkopfs eines Automaten für die Montage von Halbleiterchips auf einem Substrat A method for the calibration of the gripping axis of the bonding head of an automatic machine for the mounting of semiconductor chips on a substrate
03/22/2007DE102004021261B4 Halbleiterbauelement mit einem Hybrid-Metallisierungsschichtstapel für eine verbesserte mechanische Festigkeit während und nach dem Einbringen in ein Gehäuse A semiconductor device with a hybrid metallization layer for improved mechanical strength during, and after insertion in a housing
03/22/2007DE10152086B4 Verfahren zum Testen einer Mehrzahl von Bauelementen auf einem Wafer mit einer gemeinsamen Datenleitung und einer gemeinsamen Versorgungsleitung A method for testing a plurality of devices on a wafer with a common data line and a common supply line
03/22/2007DE10151724B4 Verfahren und Vorrichtung zum Korrigieren eines Musterfilms auf einem Halbleitersubstrat Method and apparatus for correcting a pattern film on a semiconductor substrate
03/22/2007CA2621258A1 Fluid control device
03/21/2007EP1764834A1 Electromagnetic shielding of packages with a laminate substrate
03/21/2007EP1764831A2 Forming holes using laser energy
03/21/2007EP1764830A2 A method to create narrow trenches in dielectric materials
03/21/2007EP1764829A1 Wafer holder and semiconductor manufacturing apparatus comprising it
03/21/2007EP1764828A1 Method for hybridizing two devices using solder balls of different size and device resulting therefrom
03/21/2007EP1764827A1 Recursive spacer defined patterning
03/21/2007EP1764826A1 Device for measuring the positions of electronic components
03/21/2007EP1764822A2 RF powered plasma enhanced chemical vapour deposition reactor and methods of effecting plasma enhanced chemical vapour deposition
03/21/2007EP1764655A2 Lithographic apparatus and device manufacturing method
03/21/2007EP1764189A1 Method of manufacturing chemical mechanical polishing pad
03/21/2007EP1763913A2 Surface-emitting semiconductor laser component featuring emission in a vertical direction
03/21/2007EP1763898A2 Field-effect transistors fabricated by wet chemical deposition
03/21/2007EP1763894A2 Stacked die bga or lga component assembly
03/21/2007EP1763893A2 Germanium deposition
03/21/2007EP1763860A1 Health data collecting system and semiconductor device
03/21/2007EP1673800B1 Production method and device for improving the bonding between plastic and metal
03/21/2007EP1547101B1 Amorphous alloys for magnetic devices
03/21/2007EP1472017A4 Method for cleaning an article
03/21/2007EP1423244B1 Devices for detaching substrates and the associated methods
03/21/2007EP1412969B1 Method for the production of a self-adjusted structure on a semiconductor wafer
03/21/2007EP1410424A4 Opto-electronic device integration
03/21/2007EP1399952A4 Opto-electronic device integration
03/21/2007EP1370828A4 Line profile asymmetry measurement using scatterometry
03/21/2007EP1365250B1 Method of manufacturing contact probe
03/21/2007EP1301314B1 Robot having independent end effector linkage motion
03/21/2007EP1292975B1 Method for making substrates and resulting substrates
03/21/2007EP1258029B1 Method for treating a diamond surface and corresponding diamond surface
03/21/2007EP1129485B1 Electronic component and use of a protective structure contained therein
03/21/2007EP1114465B1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device
03/21/2007EP1088338B1 ARRANGEMENT FOR STORING OBJECTS, PARTICULARLY FOR STORING DISKLIKE OBJECTS SUCH AS WAFERS, FLAT PANELS OR CDs
03/21/2007EP1051363B1 Quartz glass jig having large irregularities on the surface
03/21/2007EP0963599B1 Method and device for cleaning substrate surfaces
03/21/2007CN2881961Y MOS field effect transistor with isolation structure for monlithic integration
03/21/2007CN2881955Y Chip package
03/21/2007CN2881949Y Apparatus for implanting tin ball
03/21/2007CN2881651Y Testing socket for electrical property of electric package
03/21/2007CN2881650Y Testing apparatus
03/21/2007CN1934913A Plasma generating equipment
03/21/2007CN1934910A Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing
03/21/2007CN1934759A Semiconductor laser element and manufacturing method thereof
03/21/2007CN1934713A Pattern formation method, thin film transistor, display device and manufacturing method of these device, and television set
03/21/2007CN1934707A Method of forminig thin film integrated circuit
03/21/2007CN1934703A Monolithically integrated circuit for radio frequency applications
03/21/2007CN1934699A Semiconductor device and method of manufacturing thereof
03/21/2007CN1934698A 半导体器件 Semiconductor devices
03/21/2007CN1934697A Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method
03/21/2007CN1934696A Integrated circuit comprising laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same
03/21/2007CN1934695A Vertical heat treating apparatus and automatic teaching method for transfer mechanism
03/21/2007CN1934694A Controlled airflow stock shelf
03/21/2007CN1934693A Bipolar electrostatic chuck
03/21/2007CN1934692A Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment
03/21/2007CN1934691A Bonding structure, wire bonding method, actuator device and liquid injecting head
03/21/2007CN1934690A Solder composition and method of bump formation therewith
03/21/2007CN1934689A Plasma processing method and method for fabricating electronic component module using the same
03/21/2007CN1934688A Substrate for bonding element and method of manufacturing the same
03/21/2007CN1934687A Manufacturing method of thin film transistor
03/21/2007CN1934686A Field effect transistor and method of manufacturing a field effect transistor
03/21/2007CN1934685A Stabilization method of high-k dielectric materials
03/21/2007CN1934684A Substrate processing apparatus
03/21/2007CN1934683A Plasma chamber having plasma source coil and method for etching the wafer using the same
03/21/2007CN1934682A Laser irradiation method and laser irradiation apparatus
03/21/2007CN1934681A Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method
03/21/2007CN1934680A Method and equipment for forming crystalline silicon thin film
03/21/2007CN1934679A Method and apparatus for forming silicon dots
03/21/2007CN1934678A Method for depositing high-quality microcrystalline semiconductor materials
03/21/2007CN1934677A Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
03/21/2007CN1934676A Sequential lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites