Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/2012
08/15/2012CN102637458A Memory circuits having a plurality of keepers
08/15/2012CN102637454A Storage apparatus and operation method for operating the same
08/15/2012CN102637453A Phase change memory including serial input/output interface
08/15/2012CN102637452A Tracking scheme for memory
08/15/2012CN102637451A Memory integrated circuit and memory array
08/15/2012CN102637448A 放大器感测 Measured sense amplifier
08/15/2012CN101527167B Display device
08/15/2012CN101484947B Maintenance operations for multi-level data storage cells
08/15/2012CN101202302B Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
08/14/2012US8245099 States encoding in multi-bit flash cells for optimizing error rate
08/14/2012US8244959 Software adapted wear leveling
08/14/2012US8243529 Memory device page buffer configuration and methods
08/14/2012US8243528 Erase method of flash device
08/14/2012US8243526 Depletion mode circuit protection device
08/14/2012US8243525 Refreshing non-volatile semiconductor memory by reading without rewriting
08/14/2012US8243523 Sensing operations in a memory device
08/14/2012US8243522 NAND memory programming method using double vinhibit ramp for improved program disturb
08/14/2012US8243520 Non-volatile memory with predictive programming
08/14/2012US8243519 Writing method of a nonvolatile memory device
08/14/2012US8243518 NAND flash memory device and method of making same
08/14/2012US8243516 Interface for NAND-type flash memory
08/14/2012US8243515 Read compensation circuits and apparatus using same
08/14/2012US8243514 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same
08/14/2012US8243510 Non-volatile memory cell with metal capacitor
08/14/2012US8243509 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
08/14/2012US8243508 Resistive memory devices using assymetrical bitline charging and discharging
08/14/2012US8243507 Programmable via devices in back end of line level
08/14/2012US8243506 Phase change memory structures and methods
08/14/2012US8243505 Phase change memory device having write driving control signal corresponding to set/reset write time
08/14/2012US8243504 Phase change memory device with reference cell array
08/14/2012US8243503 Magnetic storage element responsive to spin polarized current
08/14/2012US8243502 Nonvolatile latch circuit and logic circuit using the same
08/14/2012US8243501 SRAM device
08/14/2012US8243500 Semiconductor memory and system
08/14/2012US8243499 Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
08/14/2012US8243498 Semiconductor integrated circuit
08/14/2012US8243497 Phase change memory device with reduced programming disturbance
08/14/2012US8243496 Resistive memory device and writing method thereof
08/14/2012US8243495 Phase-change random access memory capable of reducing word line resistance
08/14/2012US8243493 Resistance change memory device
08/09/2012WO2012106332A1 Method of writing to a spin torque magnetic random access memory
08/09/2012WO2012106255A1 Mapping data to non-volatile memory
08/09/2012WO2012087805A3 Non-volatile memory and methods with asymmetric soft read points around hard read points
08/09/2012WO2012036728A3 Spin torque transfer memory cell structures and methods
08/09/2012US20120201076 Spintronic devices with integrated transistors
08/09/2012US20120201075 Magnetic memory with asymmetric energy barrier
08/09/2012US20120201074 Magnetic Random Access Memory Devices Configured for Self-Referenced Read Operation
08/09/2012US20120201073 Memory Devices with Series-Interconnected Magnetic Random Access Memory Cells
08/09/2012US20120201072 Sram cell having an n-well bias
08/09/2012US20120201071 Semiconductor memory device
08/09/2012US20120201070 Nonvolatile semiconductor storage device and data writing method therefor
08/09/2012US20120201069 Memory unit and method of operating the same
08/09/2012DE19630913B4 Schaltung zur Erfassung sowohl eines Normalbetriebs als auch eines Einbrennbetriebs einer Halbleitervorrichtung Circuit for detecting both a normal operation as well as a semiconductor device of a Einbrennbetriebs
08/09/2012DE102012201789A1 Nicht-flüchtige CMOS-kompatible Logikschaltungen und zugehörige Betriebsverfahren Non-volatile CMOS compatible logic circuits and associated operational procedures
08/09/2012DE102007057321B4 Bewertungseinheit in einer Speichervorrichtung Evaluation unit in a memory device
08/08/2012EP2201571B1 Multivalue memory storage with two gating transistors
08/08/2012CN1627435B Gated diode memory cells and write method
08/08/2012CN102629487A Memory support provided with elements of ferroelectric material and improved non-destructive reading method thereof
08/08/2012CN102629486A Memory unit and method of operating the same
08/08/2012CN101714407B Row address reserved storage location trigger circuit and row address reserved storage location device
08/08/2012CN101641788B Capacitor-less floating-body volatile memory cell comprising a pass transistor and a vertical read/write enable transistor and manufacturing and programming methods thereof
08/08/2012CN101632129B Improved multi-level memory
08/08/2012CN101218650B Non-volatile storage system and method for non-volatile storage that includes compensation for coupling
08/08/2012CN101176161B Non-volatile content addressable memory using phase-change-material memory elements
08/08/2012CN101154436B Data storage device using magnetic domain wall movement and method of operating the data storage device
08/07/2012US8239643 Non-volatile memory and method with control data management
08/07/2012US8238188 Semiconductor memory device changing refresh interval depending on temperature
08/07/2012US8238178 Redundancy circuits and operating methods thereof
08/07/2012US8238170 Non-volatile memory cell healing
08/07/2012US8238168 VDD pre-set of direct sense DRAM
08/07/2012US8238166 Methods of programming and reading single-level trapped-charge memory cells using second-bit threshold detection
08/07/2012US8238164 Method of programming nonvolatile memory device
08/07/2012US8238162 System and method for detecting disturbed memory cells of a semiconductor memory device
08/07/2012US8238161 Nonvolatile memory device
08/07/2012US8238158 Programming of memory cells in a nonvolatile memory using an active transition control
08/07/2012US8238156 Nonvolatile semiconductor memory device and method of operating the same
08/07/2012US8238155 Multilevel memory cell operation
08/07/2012US8238152 Memory device and manufacturing method the same
08/07/2012US8238151 Transient heat assisted STTRAM cell for lower programming current
08/07/2012US8238150 Information storage element and method of writing/reading information into/from information storage element
08/07/2012US8238149 Methods and apparatus for reducing defect bits in phase change memory
08/07/2012US8238148 Semiconductor device having architecture for reducing area and semiconductor system including the same
08/07/2012US8238147 Multi-level phase change memory device, program method thereof, and method and system including the same
08/07/2012US8238146 Variable integrated analog resistor
08/07/2012US8238145 Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cell
08/07/2012US8238144 Magnetic memory
08/07/2012US8238143 Magnetic tunnel junction device and fabrication
08/07/2012US8238142 Semiconductor memory device
08/07/2012US8238141 VSS-sensing amplifier
08/07/2012US8238140 Semiconductor memory and program
08/07/2012US8238139 Dynamic random access memory and method of driving dynamic random access memory
08/07/2012US8238138 Semiconductor memory device and its operation method
08/07/2012US8238137 Ferroelectric random access memory device
08/07/2012US8237212 Nonvolatile memory with a unified cell structure
08/07/2012US8237147 Switching element and manufacturing method thereof
08/07/2012US8236685 Phase change memory device having multiple metal silicide layers and method of manufacturing the same
08/07/2012US8236576 Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same
08/07/2012CA2515954C Recording medium having data structure for managing reproduction duration of still pictures recorded thereon and recording and reproducing methods and apparatuses
08/02/2012WO2012103075A1 An one-die flotox-based combo non-volatile memory
08/02/2012WO2012100585A1 Resistive-switching component capable of implementing base-n addition calculation and method of base-n addition calculation
1 ... 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 ... 761