Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
05/1990
05/30/1990EP0370919A2 Method for evaluation of transition region of silicon epitaxial wafer
05/29/1990US4929564 Homogeneous electrical properties
05/29/1990US4929472 Surface-coated SiC whiskers, processes for preparing the same, ceramic reinforced with the same, and process for preparing said reinforced ceramic
05/15/1990US4925388 Apparatus for heat treating substrates capable of quick cooling
05/09/1990EP0367536A2 Rod base material for providing wafers used for electronic devices and a method of manufacturing wafers used for electronic device
05/02/1990CN1007828B Stress relief of single crystal superalloy articles
04/1990
04/24/1990US4919177 Rearranging crystal orientation; heat, electric current, elongation, cooling
04/18/1990EP0364259A2 Process for thermally patterning semiconductor bodies
04/10/1990US4915774 Method of manufacturing orientated substrate plates from solid semiconductor blocks from the III-V group
04/04/1990EP0361542A1 Composite articles and process for their production
03/1990
03/28/1990EP0360305A2 Process for producing particles of a composite material, and their use
03/21/1990EP0359591A2 Apparatus for shaping ingots into right circular cylindrical form
02/1990
02/28/1990EP0355340A1 Process for producing structures by bonding together synthetic corundum single crystals
02/20/1990US4902656 Mixing aluminum oxide and alkali or alkali earth metal halide, melting, cooling, unidirectional solidification
02/14/1990CN1006815B Technique for annealing of yal garnet crystal containing nd and ce
02/13/1990US4900363 Method and liquid preparation for removing residues of auxiliary sawing materials from wafers
01/1990
01/30/1990US4897360 Annealing a chemically vapor-deposited film to control tensile strain
01/23/1990CA1264722A1 Micro-porous superlattice material
01/10/1990EP0349633A1 Polysilicon thin film process
12/1989
12/27/1989EP0347772A1 Hole-burnable material and production thereof
12/26/1989US4889493 Method of manufacturing the substrate of GaAs compound semiconductor
12/20/1989EP0346794A1 Diamond laser crystal and method of manufacturing the same
12/20/1989CN1038133A Process and device for reducing water content in piezoelectric gapo4-crystal unit, and crystal unit thereby
12/05/1989US4885216 High strength nickel base single crystal alloys
12/05/1989US4884887 Method for positioning a crystal ingot
11/1989
11/15/1989EP0341267A1 Process for producing an optical waveguide and the product therefrom.
11/14/1989US4881234 Nitrogen-free lithim doped potassium iodide crystal
11/14/1989US4881003 Method and device for reducing the water content in piezoelectric GAPO.sub.4
11/14/1989US4880613 Lasers, electron beams, annealing
11/08/1989EP0207300B1 Process for making ceramic-oxide products with a high ratio surface to mass and a high strength
11/07/1989US4878988 Gettering process for semiconductor wafers
11/02/1989EP0339992A1 Bonding diamond to diamond
10/1989
10/24/1989US4875970 Dimensional accuracy
10/24/1989US4875461 Automatic dendritic silicon web separation machine
10/18/1989EP0148946B1 Method of producing a chrysoberyl single crystal
10/11/1989EP0336525A1 Method of forming recessed profile on ferrite single crystal by chemical etching
10/11/1989CN1036234A Process of preparing black cubic zirconium oxide precious stone
10/04/1989EP0315678A4 High volume crystal plating apparatus and method.
10/04/1989CN1036049A Annealing process of vertically pulled silicon doped by neutron transmutation
10/03/1989US4871517 Apparatus for parting wafer-shaped silicon bodies, useful for solar cells, from a silicon tape manufactured in a horizontal tape-drawing method
09/1989
09/27/1989EP0334684A1 A method for heat-treating gallium arsenide monocrystals
09/27/1989CN1035917A Cmos device for defect control by slice of silicon and utilization technology
09/26/1989CA1260293A1 Monocristalline alloy with nickel based matrix
09/13/1989EP0201600B1 Solid state laser employing diamond having color centers as a laser active material
09/12/1989US4865418 Core-crust structure where grain diameter in core is smaller t han that of crust and both are made of the same material
09/08/1989WO1989008158A1 Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same
08/1989
08/29/1989US4862488 Device for measuring the orientation of bulk monocrystalline materials using the Laue method
08/16/1989EP0328073A1 Processes for enhancing fluorescence of Ti:A12O3 tunable laser crystals
08/16/1989EP0328048A2 Method of producing semiconductor wafers with a modified check of the inner imperfections
08/15/1989US4857704 Apparatus for thermal treatments of thin parts such as silicon wafers
08/15/1989US4856544 Vessel and system for treating wafers with fluids
08/10/1989DE3834963A1 Method for the epitaxial production of a layer of a metal oxide superconductor material having high critical temperature
08/09/1989EP0327111A2 Diamond laser and method of producing the same and method of operating the same
08/01/1989US4853076 Heat treatment while crystallizing to produce tensile stress which produces electron mobility
08/01/1989US4853044 With controlled tungsten, molybdenum and tantalum content
07/1989
07/27/1989DE3900526A1 Ultra-thin diaphragm having a supporting edge
07/25/1989US4851358 Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
07/19/1989EP0324179A1 Green diamond and method of producing the same
07/18/1989US4849299 Sapphire with ion implanted amorphous zones
07/18/1989US4849034 Thermal treatment for increasing magnetostrictive response of rare earth-iron alloy rods
07/18/1989US4849030 Dispersion strengthened single crystal alloys and method
07/04/1989US4844047 Process for sawing crystal rods or blocks into thin wafers
06/1989
06/29/1989WO1989006045A1 Polysilicon thin film process and product
06/21/1989EP0320524A1 Watch glass and method for manufacturing such a glass
06/13/1989US4839195 Coating blade for microtome and method for the preparation thereof
06/06/1989US4837182 Growth mask on substrate; forming, removal sheet
06/06/1989US4836953 Heating titanium doped alumina crystal with hydrogen gas in inert atmosphere
05/1989
05/30/1989US4835006 Process for the passivation of crystal defects
05/24/1989EP0316856A1 Purple diamond and method of producing the same
05/23/1989US4833093 Method of silanization of surfaces
05/17/1989EP0316298A1 Process for decreasing the water content in piezoelectric gallium phosphate crystal elements
05/17/1989EP0316161A2 Method of heat treatment of a groups II-VI compound semiconductor
05/17/1989EP0315678A1 High volume crystal plating apparatus and method
04/1989
04/19/1989EP0312063A1 Thermal treatment for increasing magnetostrictive response of rare earth-iron alloy rods
04/11/1989US4819579 Coating of semiconductor wafers and apparatus therefor
04/05/1989EP0310332A2 Preferential orientation of metal oxide superconducting materials
04/04/1989US4818304 Thermal-magnetic treatment above curie temperature
03/1989
03/28/1989US4816420 Method of producing tandem solar cell devices from sheets of crystalline material
03/23/1989WO1989002483A1 Process embodiments for improving the electrical properties of conductors
03/22/1989EP0307608A1 Apparatus and process for annealing semiconductor wafers
03/22/1989CN1031896A Rapid determination method of crystallographic-axis polarities of monocrystalline lithium tantalate
03/14/1989US4812352 Article having surface layer of uniformly oriented, crystalline, organic microstructures
03/07/1989US4810530 Method of coating metal carbide nitride, and carbonitride whiskers with metal carbides, nitrides, carbonitrides, or oxides
02/1989
02/21/1989US4806428 Composite ceramic article and method for making it
02/15/1989CN1031119A Annealing technology for (nd, ce): yag crystal
02/07/1989US4803123 Process for production of fibrous carbon material
01/1989
01/31/1989CA1249455A1 High strength nickel base single crystal alloys
01/25/1989EP0300224A2 Strainless precision after-treatment process by radical reaction
01/25/1989CN1030622A Polarization method for lithium tantalate crystal and its apparatus
01/18/1989EP0299570A1 Process for preparing oriented wafer substrates, from massive III-V semiconductor ingots
01/18/1989EP0182870B1 Method and apparatus for reducing temperature variations across a semiconductor wafer during heating
01/12/1989EP0233184A4 Semiconductor wafer flow treatment.
01/03/1989US4795497 Method and system for fluid treatment of semiconductor wafers
12/1988
12/20/1988CA1246913A1 Low loss cladded optical fibers from halides and process for making same
12/07/1988EP0293879A1 Surface treatment method and apparatus
12/06/1988USH560 Method of manufacturing dislocation and etch channel free quartz resonator blanks
12/06/1988USH557 Epitaxial strengthening of crystals
12/06/1988CA1245956A1 Method of chemically polishing quartz crystal blanks
12/01/1988WO1988009223A1 High volume crystal plating apparatus and method
11/1988
11/15/1988US4784716 Hybrid single crystal optic fibers by embedding
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