Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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07/14/2011 | US20110168968 Fluidic nanotubes and devices |
07/13/2011 | EP2035179B1 Linear friction welding of a single crystal component to a second component with minimisation of in plane friction and forge forces |
07/07/2011 | WO2011081082A1 Method for manufacturing a polycrystalline silicon block material, method for manufacturing a polycrystalline silicon wafer, and polycrystalline silicon block material |
07/06/2011 | CN102115915A Single crystal silicon texture-making additive and single crystal silicon texture-making technology |
07/05/2011 | US7974524 Heat treatment apparatus and heat treatment method |
07/05/2011 | US7972440 Monitoring and control of a fabrication process |
06/30/2011 | WO2011076921A1 Method for coating a substrate with aluminum-doped zinc oxide |
06/29/2011 | EP2339052A1 Silicon wafer and manufacturing method thereof |
06/29/2011 | CN201887067U Bubbling stirred liquid replenishing device of texture etching cell |
06/29/2011 | CN201887066U Mechanical agitation type wool-making tank liquid replenishing device |
06/29/2011 | CN201887064U Device with wool preparing groove for supplementing chemical reagents with uniform concentration |
06/29/2011 | CN201887061U Hold-down strip device for monocrystal etching rack |
06/29/2011 | CN102110740A Twice-heat treatment method of directionally solidified polycrystalline silicon solar cell |
06/29/2011 | CN102108557A Method for preparing monocrystalline silicon suede |
06/29/2011 | CN102108556A Method for preventing liquor from being diluted and protecting surface of silicon wafer |
06/29/2011 | CN101532175B Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method |
06/29/2011 | CN101319361B 单晶金刚石 Single crystal diamond |
06/28/2011 | US7968074 Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
06/23/2011 | WO2011074599A1 Method for producing mosaic diamond |
06/23/2011 | WO2010033575A3 Abrasive particles having a unique morphology |
06/22/2011 | EP2336409A2 Method of preparing a coated nanocrystal |
06/22/2011 | EP2336399A2 Method of producing high quality silicon carbide single crystal in a seeded growth system. |
06/22/2011 | DE102007027112B4 Verfahren zur Reinigung, Trocknung und Hydrophilierung einer Halbleiterscheibe A method for cleaning, drying and hydrophilization of a semiconductor wafer |
06/22/2011 | CN201877455U Flocking groove with liquid level monitoring device for liquid medicine |
06/22/2011 | CN102102227A Preparation method of hydrophobic light trapping structure on silicon surface |
06/22/2011 | CN102102226A Splicing device and method of crystal bars with equal length or square crystal ingots with equal length |
06/22/2011 | CN102102225A Method for reducing cracking degree of rare earth-doped halide single crystal |
06/16/2011 | US20110141427 Liquid Crystal Display (LCD) Panel and Method of Manufacturing the Same |
06/15/2011 | EP2333819A1 Method for fabricating p-type gallium nitride-based semiconductor, method for fabricating nitride-based semiconductor element, and method for fabricating epitaxial wafer |
06/15/2011 | CN201864794U Polysilicon etching tank |
06/15/2011 | CN102097312A Process for growing ONO (oxide-nitride-oxide) capacitor structure |
06/15/2011 | CN102094248A Annealing device and method |
06/14/2011 | US7962205 Human subject index estimation apparatus and method |
06/08/2011 | CN201857427U Silicon cup corrosion fixture |
06/08/2011 | CN1924116B Process for producing silicon wafer |
06/03/2011 | WO2011065688A2 Method and device for forming polycrystalline silicon |
06/03/2011 | WO2011065403A1 Single-crystal sapphire for producing single-crystal sapphire substrate for led, single-crystal sapphire substrate for led, luminescent element, and processes for producing these |
06/01/2011 | EP2327816A2 Method of producing high quality single crystal of silicon carbide |
06/01/2011 | CN201853732U Flocking chip frame for silicon chip |
06/01/2011 | CN102082203A Bubbling and stirring type liquid-replenishing device with texturing tank |
06/01/2011 | CN102082202A Mechanically-agitating type liquid-replenishing device for wool-making groove |
06/01/2011 | CN102082201A Isocyatic chemical reagent supplementing device |
06/01/2011 | CN102082200A Device for filling chemical reagent with uniform concentration into texturing groove |
06/01/2011 | CN102080265A Improved thermal treatment process for neutron-doped crystal |
06/01/2011 | CN102080264A Wafer vertically-annealing method and device |
05/26/2011 | DE102009055685A1 Verfahren zur Qualitätsverbesserung von Wafern sowie Verwendung des Verfahrens A method for improving the quality of wafers as well as use of the method |
05/25/2011 | EP1718956B1 PROCESS FOR PREPARING CAF sb 2 /sb LENS BLANKS ESPECIALLY FOR 193 NM AND 157 NM LITHOGRAPHY WITH MINIMIZED DEFECTS |
05/25/2011 | EP1670975B1 Spinel boules, wafers, and methods for fabricating same |
05/25/2011 | EP1502283B1 Method of etching substrates |
05/25/2011 | CN102071426A Method for eliminating recrystallization of directionally solidified nickel-based high-temperature alloy |
05/25/2011 | CN102071393A Carburization method for controlling recrystallization of unidirectionally solidified nickel-based high temperature alloy |
05/25/2011 | CN102071384A Controlled directional solidification nickel-base high-temperature alloy recrystallizing method |
05/25/2011 | CN102071383A Method for controlling re-crystallization of directionally solidified nickel base high-temperature alloy by using coating method |
05/25/2011 | CN101545143B Annealing method for improving luminous efficiency of cerium-doped yttrium aluminum garnet crystal |
05/19/2011 | WO2011058870A1 Group-iii nitride crystal substrate, group-iii nitride crystal substrate with epitaxial layer, semiconductor device and method of manufacturing thereof |
05/18/2011 | EP2322698A1 Method for manufacturing nitride substrate, and nitride substrate |
05/18/2011 | EP2322681A1 Method to avoid recrystallisation through alitization |
05/18/2011 | CN1628370B Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
05/18/2011 | CN102066624A Method for manufacturing the color controlled sappire |
05/12/2011 | WO2011055673A1 Hybrid silicon wafer |
05/12/2011 | WO2011055672A1 Hybrid silicon wafer |
05/11/2011 | EP2319070A2 Passivation of aluminum nitride substrates |
05/11/2011 | CN201826017U Ultrahigh vacuum ion source chip cleaning system |
05/11/2011 | CN1936112B Low defect density silicon |
05/11/2011 | CN102051689A Preparation method of metal/alloy nanoparticle-semiconductor nanowire or nanorod composite nano system |
05/11/2011 | CN102051618A Method for preparing black silicon based on liquid-phase chemical reaction |
04/28/2011 | WO2011048343A1 Method for producing a magnetophotonic crystal, magnetophotonic crystal and component including such a crystal |
04/27/2011 | EP2314737A2 Method of producing high purity semi-insulating single crystal silicon carbide wafer |
04/27/2011 | CN102037166A Method for transferring a thin layer by proton exchange |
04/27/2011 | CN102031567A Heat processing apparatus and cooling method |
04/27/2011 | CN102031525A Method for etching deep through silicon via (TSV) |
04/27/2011 | CN101591812B Production technology for brazing diamond polycrystal and used mold thereof |
04/27/2011 | CN101187059B Silicon wafer having good intrinsic getterability and method for its production |
04/21/2011 | WO2011016836A3 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same |
04/21/2011 | DE102009048868A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mittels einer thermischen Behandlung und niederohmiges einkristallines SiC-Substrat Manufacturing method of a SiC bulk single crystal by means of a thermal treatment, and low-resistance single-crystal SiC substrate |
04/20/2011 | CN201801639U Bearing box |
04/20/2011 | CN201801638U Fixture for splicing boule end faces |
04/20/2011 | CN102021659A Acid corrosion technology of 8-inch light-doped monocrystalline silicon wafers |
04/20/2011 | CN102021658A Heavily doped monocrystalline silicon wafer corrosion technique by alkali corrosion before acid corrosion |
04/20/2011 | CN102021657A Corrosion process for heavily doped monocrystalline silicon wafers sequentially subjected to acid corrosion and alkaline corrosion |
04/20/2011 | CN102021656A Silicon ingot sticking method |
04/20/2011 | CN102021655A Synthetic quartz wafer electric cleaning method |
04/20/2011 | CN101532179B Method for manufacturing silicon wafer on insulator |
04/13/2011 | EP1741809B1 Electrostatic charge controlling process for piezoelectric oxide single crystal |
04/13/2011 | CN201793816U Multi-point air inlet device for upper and lower air inlet pipes at tail of phosphorus diffusion furnace |
04/13/2011 | CN102017069A Silicon monocrystal wafer, method for manufacturing the silicon monocrystal wafer and method for evaluating the silicon monocrystal wafer |
04/13/2011 | CN102011193A Protein modified GaN nanowire array as well as preparation method and application thereof |
04/13/2011 | CN102011192A GaN nanowire array carrying functional groups and making method and application thereof |
04/13/2011 | CN101580965B Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method |
04/07/2011 | WO2011040566A1 Cdte semiconductor substrate for epitaxial growth and substrate container |
04/07/2011 | DE102005039116B4 Verfahren zur Erzeugung eines Siliziumwafers A method for producing a silicon wafer |
04/06/2011 | EP2305860A2 Gallium nitride substrate |
04/06/2011 | EP2305859A1 III-V Nitride substrate boule and method of making and using the same |
04/06/2011 | EP1485956B1 Process of producing multicrystalline silicon substrate and solar cell |
04/06/2011 | CN102005381A Plasma processing apparatus |
04/06/2011 | CN102002760A Method for splicing short silicon rods |
04/06/2011 | CN102002759A Locating support table of wafer box for rapid thermal treatment furnace |
04/06/2011 | CN102002758A Novel rapid wafer annealing device |
04/06/2011 | CN102002682A Method for preparing texture on surface of silicon wafer |
04/06/2011 | CN101451269B Method for preparing centimeter grade mono-layer or double layers ordered single crystal graphite layer |