Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
02/2000
02/01/2000US6021152 Reflective surface for CVD reactor walls
01/2000
01/26/2000CN1242594A Method for implanting negative hydrogen ion and implanting apparatus
01/20/2000WO2000002674A1 Cleaning process for rapid thermal processing system
01/18/2000US6016383 Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
01/13/2000WO2000002240A1 METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE
01/12/2000EP0970337A1 Method for cooling a furnace, and furnace provided with a cooling device
01/11/2000US6013129 Production of heavily-doped silicon
12/1999
12/28/1999US6007635 Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
12/23/1999WO1999066109A1 Method for contact diffusion of impurities into diamond and other crystalline structures and products
12/21/1999US6005226 Rapid thermal processing (RTP) system with gas driven rotating substrate
12/21/1999US6005127 Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films
12/15/1999EP0963459A2 Wafer support system
12/14/1999US6002109 System and method for thermal processing of a semiconductor substrate
12/14/1999US6001172 Apparatus and method for the in-situ generation of dopants
11/1999
11/30/1999US5994208 Doping in crystalline diamond substrates
11/18/1999WO1999059196A1 Temperature control system for a thermal reactor
11/09/1999CA2173267C Fluid control system and valve to be used therein
11/03/1999EP0892859B1 Process for preparing endohedral fullerenes or fullerene derivatives
10/1999
10/26/1999US5972743 N-doping a material with antimony using antimony a precursor
10/19/1999US5970214 Heating device for semiconductor wafers
10/07/1999WO1999050606A1 Substrate support for a thermal processing chamber
10/06/1999CN1230770A Lamp annealer and method for annealing semiconductor wafer
10/05/1999US5961725 Conical baffle for semiconductor furnaces
10/05/1999US5961323 Dual vertical thermal processing furnace
09/1999
09/28/1999US5960158 Apparatus and method for filtering light in a thermal processing chamber
09/14/1999US5951896 Rapid thermal processing heater technology and method of use
09/14/1999US5950723 Method of regulating substrate temperature in a low pressure environment
09/08/1999EP0940845A2 Susceptor for semiconductor manufacturing equipment and process for producing the same
09/08/1999CN1227968A Susceptor for semiconductor manufacturing equipment and process for producing the same
09/07/1999US5948300 Process tube with in-situ gas preheating
09/07/1999US5947718 Semiconductor processing furnace
08/1999
08/31/1999US5944891 Method for the heat treatment of ZnSe crystal
08/18/1999EP0936661A2 Double wall reaction chamber glassware
08/18/1999CN1226078A Combined ion injection method for quickly synthesized material chip
08/11/1999CN1225501A Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
08/10/1999CA2261394A1 Double wall reaction chamber glassware
08/03/1999US5933751 Charging a group group iii donor impurity-coated group ii-vi single crystal and a group ii element for constituting the single crystal into a closed vessel and heating them without being in contact with each other
07/1999
07/28/1999EP0931187A1 A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER
07/27/1999US5930456 Heating device for semiconductor wafers
07/20/1999US5926727 Phosphorous doping a semiconductor particle
07/20/1999US5925421 Laser irradiation method
07/13/1999US5921773 Wafer boat for a vertical furnace
06/1999
06/30/1999EP0926707A2 Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
06/29/1999US5918143 Fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material
06/03/1999WO1999027563A1 Rapid thermal processing (rtp) system with gas driven rotating substrate
06/03/1999WO1999026955A1 ANTIMONY/LEWIS BASE ADDUCTS FOR Sb-ION IMPLANTATION AND FORMATION OF ANTIMONIDE FILMS
06/01/1999US5908292 Semiconductor processing furnace outflow cooling system
05/1999
05/26/1999CN1217563A Silicon substrate and mfg. method therefor
05/18/1999US5904767 Irradiation of singls crystal into phosphorus isotope
05/18/1999US5904478 Semiconductor processing furnace heating subassembly
05/12/1999EP0915191A2 Apparatus for making a vacuum seal between two bodies made of different materials
05/11/1999US5902135 Method for removing crystal defects in silicon wafers
05/11/1999US5902103 Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof
05/11/1999US5902102 Diffusion furnace used for semiconductor device manufacturing process
05/04/1999US5900177 Furnace sidewall temperature control system
05/04/1999US5899733 Method for the implantation of dopant
04/1999
04/27/1999US5897311 Support boat for objects to be processed
04/21/1999EP0910115A1 Heat-treating method and radiant heating device
04/15/1999DE19745185A1 Arrangement for vacuum tight joining of two bodies consisting of different materials
04/14/1999EP0908958A1 In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
04/13/1999US5893760 Method of heat treating a semiconductor wafer to reduce stress
04/13/1999CA2249703A1 Device for the vacuum-tight connecting of two bodies of different materials
04/06/1999US5891575 Growing and releasing diamonds
03/1999
03/30/1999US5888297 Method of fabricating SOI substrate
03/25/1999WO1999014395A1 Process tube with in situ gas preheating
03/24/1999EP0903429A2 Process for producing heavily doped silicon
03/18/1999DE19738732A1 Neutron-doped silicon wafer has very low radial and axial resistance variation
03/16/1999US5883919 Diffusion furnace system for preventing gas leakage
03/16/1999US5882990 Phosphorous ions are diffused into the backside surface of a silicon substrate
03/03/1999CN1209658A Method for producing film and apparatus for implementing same
02/1999
02/18/1999WO1999007924A1 Apparatus and method for the in-situ generation of dopants
02/16/1999US5871812 Apparatus and method for depositing molecular impurities on a semiconductor wafer
02/09/1999US5870526 Inflatable elastomeric element for rapid thermal processing (RTP) system
01/1999
01/28/1999WO1999004067A1 Inflatable elastomeric element for rapid thermal processing (rtp) system
01/27/1999EP0892859A1 Process for preparing endohedral fullerenes or fullerene derivatives
01/26/1999US5863334 Strength-enhanced quartz boat
01/21/1999WO1999002757A1 Reflective surface for cvd reactor walls
01/20/1999EP0892092A1 Surface enriched diamond
01/19/1999US5862302 Thermal processing apparatus having a reaction tube with transparent and opaque portions
01/19/1999US5860805 Effluent-gas-scavenger system for process tube, minimizing back diffusion and atmospheric contamination
01/13/1999CN1204938A Furnace sidewall temperature control system
01/05/1999US5856652 Radiant heating apparatus and method
12/1998
12/23/1998EP0885859A2 Member for semiconductor equipment
12/22/1998US5851908 Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC
12/22/1998US5850853 Fluid control system and valve to be used therein
12/17/1998DE19725091A1 Transistor component with insulated gate electrode
12/16/1998EP0884407A1 Method and apparatus for producing thin films using colliding currents of process gas and inert gas
12/16/1998EP0884406A1 Furnace sidewall temperature control system
12/08/1998US5846073 Semiconductor furnace processing vessel base
11/1998
11/24/1998US5840125 Rapid thermal heating apparatus including a substrate support and an external drive to rotate the same
11/17/1998US5837357 Eliminating head smear
11/12/1998WO1998032893A3 Wafer support system
11/10/1998US5833425 Semiconductor device manufacturing apparatus employing vacuum system
10/1998
10/21/1998EP0872878A1 Heat-treating apparatus
10/14/1998EP0871212A1 Heat treatment apparatus
10/14/1998EP0870852A1 Method and apparatus for preventing condensation in an exhaust passage
10/13/1998US5820686 A support for substrate
10/13/1998US5820685 Wafer support device
10/13/1998US5820367 Boat for heat treatment
10/13/1998US5820366 Dual vertical thermal processing furnace
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