Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
01/1988
01/07/1988DE3719548A1 Diffusion of acceptor element into III=V cpd. semiconductor wafer
12/1987
12/23/1987DE3620848A1 Device for doping a semiconductor body
12/22/1987US4714628 Process and apparatus for treating a material by a thermoionic effect with a view to modifying its physicochemical properties
12/08/1987US4711989 Diffusion furnace multizone temperature control
12/08/1987US4711694 Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet
12/02/1987EP0247680A1 Process for producing a semiconductor device including the vapour phase deposition of layers on a substrate
11/1987
11/10/1987US4704988 Process and apparatus for obtaining a gaseous stream containing a compound in the vapor state, more particularly usable for introducing this compound into an epitaxy reactor
10/1987
10/29/1987DE3702734C1 Oven with a diffusion tube for treating semiconductor wafers
10/14/1987EP0138965B1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
10/01/1987DE3610162A1 Doping solution
09/1987
09/30/1987EP0239432A1 Method and device for the thermo-ionic treatment of a material in order to change its physiochemical properties
08/1987
08/25/1987US4689094 Compensation doping of group III-V materials
08/11/1987US4685979 Method of manufacturing a group II-VI compound semiconductor device having a pn junction
07/1987
07/22/1987EP0229050A1 Chemical refill system.
06/1987
06/16/1987US4673799 Fluidized bed heater for semiconductor processing
06/16/1987EP0225501A2 Process and apparatus for treating semiconductor materials
06/10/1987EP0225111A2 Wafer boat manufacture and product
06/03/1987CN86107824A Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
06/02/1987US4669938 Apparatus for automatically loading a furnace with semiconductor wafers
05/1987
05/20/1987EP0221897A1 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
05/19/1987US4667076 Method and apparatus for microwave heat-treatment of a semiconductor water
05/13/1987EP0221182A1 Process for fabricating integrated optical devices on lithium niobate
05/12/1987US4664849 Optical materials from intercalation of polyvalent cations in beta double prime alumina
05/05/1987CA1221388A1 Composite refractory foams
04/1987
04/21/1987CA1220768A1 Bubbler cylinder and dip tube device
02/1987
02/17/1987CA1217936A1 Apparatus for providing depletion-free uniform thickness cvd thin-film on semiconductor wafers
02/11/1987CN86104069A Multiple impurity-absorbing technique of silicon and multiple impurity-absorbed silicon slice
02/10/1987CA1217784A Porous semiconductor dopant carriers
02/04/1987EP0210476A1 Bubbler cylinder device
02/03/1987CA1217507A1 Foam semiconductor dopant carriers
01/1987
01/21/1987EP0209257A1 Ion implantation
01/20/1987US4638484 Solid state laser employing diamond having color centers as a laser active material
12/1986
12/31/1986WO1986007615A1 Chemical refill system
12/30/1986EP0206370A1 Process for making a semiconductor device, including the vapour phase deposition of crystalline layers on a substrate
12/16/1986US4629514 Method of producing II-V compound semiconductors
12/10/1986EP0051639B1 Implantation of vaporized material on melted substrates
11/1986
11/25/1986US4624858 Process for the production by catalysis of a layer having a high magnetic anisotropy in a ferrimagnetic garnet
11/25/1986US4624756 Electrolysis of solution of alkali salt of dicyanomatallophthalocyanine
11/20/1986WO1986006875A1 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
11/20/1986WO1986006847A1 Process for fabricating integrated optical devices on lithium niobate
11/20/1986WO1986006708A1 Septum closure
11/20/1986EP0201600A1 Solid state laser employing diamond having color centers as a laser active material.
11/04/1986US4620832 Furnace loading system
10/1986
10/28/1986US4619798 Method of manufacturing parts for use to the heat processing furnace
10/28/1986US4619718 Method of manufacturing a Group II-VI semiconductor device having a PN junction
10/08/1986EP0196682A1 Fluidized bed heater, reactor and method for semiconductor processing
09/1986
09/30/1986CA1211929A1 Stable suspensions of boron, phosphorus, antimony and arsenic dopants
09/17/1986EP0194501A2 Draw-off head for liquid containers
09/17/1986EP0194499A2 Process for diffusing impurities into a semiconductor body
08/1986
08/20/1986EP0191023A1 Tubular quartz-glass element with a flange.
08/13/1986EP0190605A2 Process for locally altering the atomic composition of solid bodies, especially semiconductors
07/1986
07/29/1986CA1208812A1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
07/08/1986US4599516 Specimens rotating device
07/08/1986US4598665 Silicon carbide process tube for semiconductor wafers
07/02/1986EP0186532A1 Method of producing by catalysis a layer having a strong magnetic anisotropy in a ferrimagnetic garnet
07/02/1986EP0186531A1 Method of producing a layer having a strong magnetic anisotropy in a ferrimagnetic garnet
07/02/1986CN85100856A New technique for prepn of monocrystal si chip with perfact layer on the surface
06/1986
06/24/1986US4596716 Sintering wafer-shaped body comprising silicon and binder in nitrogen atmosphere, applying to carrier a dopant
06/05/1986WO1986003347A1 Solid state laser employing diamond having color centers as a laser active material
06/03/1986US4593168 Method and apparatus for the heat-treatment of a plate-like member
06/03/1986US4592793 Heating to diffuse Group 5 element dope
05/1986
05/27/1986CA1204986A1 Diffusion equipment
05/21/1986EP0181624A1 Coating of semiconductor wafers and apparatus therefor
05/13/1986US4587928 Impeameable process tube of sintered silicon carbide
04/1986
04/29/1986CA1203921A1 Diffusion method to produce semiconductor devices
03/1986
03/26/1986EP0175601A1 Method and apparatus for obtaining a gas flow containing a gaseous compound, especially for use in an epitaxy reactor
03/25/1986US4578283 Polymeric boron nitrogen dopant
03/04/1986US4573431 Modular V-CVD diffusion furnace
02/1986
02/25/1986US4572101 Side lifting wafer boat assembly
02/13/1986WO1986000973A1 Tubular quartz-glass element with a flange
02/11/1986US4569452 Silica glass tray made for wafers
01/1986
01/02/1986EP0166032A2 Carrier rack of quartz glass for substrate wafers
12/1985
12/24/1985CA1198526A1 Gas seal for semiconductor processing equipment
12/17/1985US4559244 Composite refractory foams
12/03/1985US4556437 Placing dopant wafers along with slices in a boat and heating
11/1985
11/21/1985EP0161747A1 Semiconductor production method
11/07/1985EP0067165A4 Improved partial vacuum boron diffusion process.
10/1985
10/23/1985EP0158900A2 Installation for feeding an oven system automatically with semi-conductor chips
10/16/1985EP0158570A1 Apparatus for introducing silicon wafer boat carriers into a gaseous diffusion furnace used for the production of micro-integrated circuits
10/16/1985EP0157974A1 Composite refractory foams
10/02/1985EP0156055A1 Foam semiconductor dopant carriers
10/02/1985EP0156054A1 Porous silicon nitride semiconductor dopant carriers
08/1985
08/21/1985EP0151851A2 Porous semiconductor dopant carriers
08/13/1985US4535228 Heater assembly and a heat-treatment method of semiconductor wafer using the same
08/13/1985US4535227 Method for heating semiconductor wafer by means of application of radiated light
07/1985
07/31/1985EP0149750A2 Cantilevered boat-free semiconductor wafer handling system
07/30/1985CA1191075A1 Method for regulating concentration and distribution of oxygen in czochralski grown silicon
07/02/1985US4526826 Foam semiconductor dopant carriers
07/02/1985US4526632 Using as solvent a mixture of tellurium and group 6B element, charging group 1B element as impurity, flaking source crystal of groups 2B-6B compounds, establishing temperature gradient, depositing p-type crystal, slicing
06/1985
06/25/1985US4525429 Porous semiconductor dopant carriers
06/18/1985US4523885 Apparatus for loading magazines into furnaces
06/05/1985EP0143697A2 Modular V-CVD diffusion furnace
05/1985
05/29/1985EP0143053A2 Apparatus for providing depletion-free uniform thickness cvd thin-film on semiconductor wafers
05/21/1985US4518349 Cantilevered boat-free semiconductor wafer handling system
05/14/1985US4517220 Deposition and diffusion source control means and method
05/07/1985US4515104 Contiguous wafer boat
05/02/1985EP0139134A2 Deposition and diffusion source control means and method
04/1985
04/30/1985US4514636 Ion treatment apparatus
04/30/1985US4514440 Spin-on dopant method
04/23/1985US4512812 Method for reducing phosphorous contamination in a vacuum processing chamber
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