Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
04/1985
04/23/1985US4512391 Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
03/1985
03/26/1985US4506815 Bubbler cylinder and dip tube device
03/20/1985EP0134716A1 Process for high temperature drive-in diffusion of dopants into semiconductor wafers
03/05/1985US4503087 High speed
01/1985
01/30/1985EP0132321A1 Optical materials from intercalation of polyvalent cations in beta double prime alumina
01/29/1985US4496843 Method for producing metal ions
01/15/1985US4493977 Method for heating semiconductor wafers by a light-radiant heating furnace
01/15/1985US4493287 Diffusion equipment
01/09/1985EP0130311A2 Stable suspensions of boron, phosphorus, antimony and arsenic dopants
12/1984
12/25/1984US4490192 Stable suspensions of boron, phosphorus, antimony and arsenic dopants
12/12/1984EP0028266B1 Boat for conveying semiconductor substrates
12/11/1984US4487787 Method of growing silicate glass layers employing chemical vapor deposition process
12/04/1984US4486465 Method for deposition on a semiconductor wafer
11/1984
11/27/1984US4484538 Apparatus for providing depletion-free uniform thickness CVD thin-film on semiconductor wafers
11/06/1984US4481406 Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
10/1984
10/16/1984US4477112 Semiconductor substrate handling tray
10/11/1984WO1984003905A1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
09/1984
09/19/1984EP0119130A1 Transparent heating apparatus having at least two zones at different temperatures
09/18/1984US4472622 Apparatus for thermal treatment of semiconductors
09/18/1984US4472206 Volatility, coatings, uniformity
08/1984
08/21/1984US4466381 Coating of semiconductor wafers and apparatus therefor
08/14/1984US4465529 Irradiation with electron beam
07/1984
07/18/1984EP0113518A2 Bubbler cylinder and dip tube device
06/1984
06/20/1984EP0111085A2 Ion implantation process for compound semiconductor
06/05/1984US4453080 Temperature control of a workpiece under ion implantation
05/1984
05/15/1984US4449037 Method and apparatus for heating semiconductor wafers
05/02/1984EP0036859B1 Boat for wafer processing
04/1984
04/04/1984EP0104412A1 Polymeric boron-nitrogen dopant
04/03/1984US4440538 Apparatus for loading and unloading a furnace
03/1984
03/27/1984US4439265 Fabrication method for LiNbO3 and LiTaO3 integrated optics devices
03/13/1984US4436674 Vapor mass flow control system
02/1984
02/28/1984US4434036 Method and apparatus for doping semiconductor material
02/15/1984EP0100539A2 Assembled device for supporting semiconductor wafers or the like
01/1984
01/17/1984US4426237 Volatile metal oxide suppression in molecular beam epitaxy systems
12/1983
12/20/1983CA1159161A1 Method and apparatus for conducting heat to or from an article being treated under vacuum
12/06/1983CA1158109A1 Coating of semiconductor wafers and apparatus therefor
11/1983
11/15/1983US4415385 Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel
11/09/1983EP0093504A1 Apparatus for introducing silicon wafers in magazines into a furnace
10/1983
10/18/1983US4410974 Capacitance detection type record stylus and method for making the stylus
10/18/1983US4410801 Ion implantation equipment
09/1983
09/13/1983US4404233 Ion implanting method
07/1983
07/26/1983CA1150668A1 Implantation of vaporized material on melted substrates
07/19/1983US4394123 Tiltable support bracket for slidably supporting quartz support tubes for semiconductor wafer processing boards, and processing apparatus embodying such brackets
07/12/1983US4393013 Vapor mass flow control system
07/12/1983US4392928 Method of doping a semiconductor
06/1983
06/28/1983US4389967 Boat for carrying semiconductor substrates
06/21/1983US4389256 Method of manufacturing pn junction in group II-VI compound semiconductor
05/1983
05/10/1983US4382776 Quartz tube for thermal processing of semiconductor substrates
05/03/1983US4382099 Dopant predeposition from high pressure plasma source
04/1983
04/27/1983EP0077408A1 A method and apparatus for the heat treatment of semiconductor articles
04/26/1983US4381213 Partial vacuum boron diffusion process
04/05/1983US4379006 B2 O3 Diffusion processes
03/1983
03/15/1983CA1143074A1 Boat for wafer processing
02/1983
02/15/1983US4373975 Vapor phase diffusion of antimony
01/1983
01/25/1983US4370176 Process for fast droping of semiconductors
01/25/1983US4370158 Heat-treating method for semiconductor components
01/11/1983US4367768 Refractory protective tube for the heat treatment of semiconductor components
12/1982
12/22/1982EP0067521A2 Process for maximizing laser crystal efficiency by effecting single site for dopant
12/22/1982EP0067165A1 Improved partial vacuum boron diffusion process.
12/08/1982EP0066288A1 Method for ion-implanting metal elements
11/1982
11/25/1982EP0051639A4 Implantation of vaporized material on melted substrates.
11/23/1982US4360393 Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates
10/1982
10/26/1982US4355974 Wafer boat
10/13/1982EP0062174A1 Apparatus treating specimens at raised temperatures
09/1982
09/28/1982US4351805 Single gas flow elevated pressure reactor
08/1982
08/31/1982US4347431 Diffusion furnace
08/17/1982US4345142 Directly heatable semiconductor tubular bodies
07/1982
07/21/1982EP0056326A2 Coating of semiconductor wafers and apparatus therefor
07/07/1982EP0055619A1 Method for regulating concentration and distribution of oxygen in Czochralski grown silicon
06/1982
06/24/1982WO1982002065A1 Improved partial vacuum boron diffusion process
06/15/1982US4335160 Chemical process
06/08/1982CA1125440A1 Method of the boron doping of silicon bodies
05/1982
05/19/1982EP0051639A1 Implantation of vaporized material on melted substrates.
05/11/1982US4329016 Diffusion of titanium into lithium niobate from a titanium oxide-0ilica composite layer
03/1982
03/09/1982US4318889 Impermeable cooled closing plug for processing tubes, in particular in semiconductor manufacture
03/02/1982US4317680 Diffusion source and method of preparing
02/1982
02/24/1982EP0046355A1 Quartz tube for thermal processing of semiconductor substrates
02/02/1982US4313773 Method for removing borosilicate and boron rich oxides from a silicon body prior to doping silicon bodies with a SiB6 solid source
01/1982
01/26/1982US4312294 Apparatus for thermal treatment of semiconductors
12/1981
12/02/1981EP0040646A1 Cooled closure for reaction tubes, especially in the manufacture of semiconductors
11/1981
11/26/1981WO1981003344A1 Implantation of vaporized material on melted substrates
11/12/1981WO1981003239A1 Ion implantation apparatus for semiconductor manufacture
09/1981
09/22/1981US4290830 Method of selectively diffusing aluminium into a silicon semiconductor substrate
08/1981
08/18/1981US4284663 Increasing refractive index
08/12/1981EP0033685A1 Process for doping semiconductors rapidly
07/1981
07/28/1981US4281030 Particle flux
07/22/1981EP0032174A1 Method of doping silicium substrates by diffusion of boron and use of this method for the manufacture of the base zones of bipolar transistors
07/14/1981US4278422 Diffusion tube support collar
07/08/1981EP0031671A2 A method of growing silicate glass layers employing a chemical vapour deposition process
07/08/1981EP0031546A2 Ion implantation apparatus
07/07/1981US4277307 Method of restoring Si crystal lattice order after neutron irradiation
07/07/1981US4277293 Growth of synthetic diamonds having altered electrical conductivity
05/1981
05/13/1981EP0028266A1 Boat for conveying semiconductor substrates
05/05/1981CA1100390A1 N-conductivity silicon monocrystals produced by neutron irradiation
04/1981
04/14/1981US4261762 Method for conducting heat to or from an article being treated under vacuum
03/1981
03/25/1981EP0025670A1 Method and apparatus for conducting heat to or from an article being treated under vacuum
03/24/1981CA1098219A1 Semiconductors
03/19/1981WO1981000681A1 Boat for wafer processing
03/17/1981US4256229 Boat for wafer processing
02/1981
02/10/1981US4249970 Exposure to an oxygen-boron tribromide gas mixture to form a boron glass layer over a silicon hexabromide layer; removal of glass; heat treatment
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