Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
05/2002
05/16/2002US20020056814 Method and device for irradiating an ion beam, and related method and device thereof
05/09/2002US20020055080 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
05/09/2002US20020053318 Slicing of single-crystal films using ion implantation
05/08/2002EP1203108A1 Cooled window
05/08/2002EP1034561B1 Rapid thermal processing (rtp) system with gas driven rotating substrate
05/07/2002US6383287 System and method for performing diffusion on a three-dimensional substrate
05/07/2002US6381987 Process for making opaque quartz glass and opaque component made according to the process
05/02/2002WO2001004940A9 Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
04/2002
04/25/2002US20020048860 Method of producing thin films using current of process gas and inert gas colliding with each other and apparatus for producing thin films for practicing the same method
04/25/2002US20020048311 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe
04/25/2002US20020047004 System and method for thermal processing of a semiconductor substrate
04/23/2002US6375749 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
04/18/2002US20020045146 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus
04/16/2002US6371712 Support frame for substrates
04/10/2002EP1194619A1 Doped diamond
04/09/2002US6369361 Thermal processing apparatus
04/04/2002WO2002027059A2 System and method for controlling movement of a workpiece in a thermal processing system
04/03/2002EP1192299A1 Doping of crystalline substrates
03/2002
03/21/2002WO2002023594A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
03/20/2002EP1189261A2 Batch-type heat treatment apparatus and method for controlling it
03/20/2002EP1188722A1 Article comprising a body made of quartz glass having improved resistance against plasma corrosion, and method for production thereof
03/14/2002US20020030047 Heat treatment apparatus having a thin light-transmitting window
03/12/2002US6355909 Method and apparatus for thermal processing of semiconductor substrates
03/12/2002US6355577 System to reduce particulate contamination
03/05/2002US6353210 Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
03/05/2002US6352884 Method for growing crystals having impurities and crystals prepared thereby
02/2002
02/26/2002US6350703 Semiconductor substrate and production method thereof
02/21/2002US20020022348 Semiconductor substrate and production method thereof
02/21/2002US20020022210 Wafer treatment chamber having thermal reflector
02/19/2002US6348417 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
02/06/2002EP1012358B1 Inflatable elastomeric element for rapid thermal processing (rtp) system
02/05/2002US6345150 Single wafer annealing oven
01/2002
01/29/2002US6343183 Wafer support system
01/29/2002US6342691 Apparatus and method for thermal processing of semiconductor substrates
01/24/2002WO2002006568A2 Slicing of single-crystal films using ion implantation
01/22/2002US6340535 Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device
01/17/2002WO2002005323A2 Thermally processing a substrate
01/17/2002US20020006877 Annealing using oxygen
01/16/2002EP1171653A1 Slicing of single-crystal films using ion implantation
01/10/2002US20020002951 Heating installation for a reactor
01/03/2002WO2002000971A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer
01/01/2002US6334404 Method and apparatus for reducing particle contamination on wafers
12/2001
12/27/2001US20010054390 Wafer support system
12/27/2001US20010054384 Vaporiser for generating feed gas for an arc chamber
12/13/2001US20010050052 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
12/12/2001CN1326018A Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter
12/11/2001US6329643 Method of temperature-calibrating heat treating apparatus
12/11/2001US6328561 Method for cooling a furnace, and furnace provided with a cooling device
12/04/2001US6325848 Method of making a silicon substrate with controlled impurity concentration
11/2001
11/29/2001US20010046754 Process for fabricating semiconductor device
11/29/2001US20010046609 Diffusing aluminum (Al) through the zinc-selenide (ZnSe) substrate by forming an Al film on the substrate, heat treating in selenium atmosphere and then heat treating in a zinc atmosphere; monochromatic light emitting diodes (LED's)
11/29/2001DE19962452A1 Verfahren für die Herstellung von opakem Quarzglas und nach dem Verfahren hergestelltes opakes Bauteil A process for the production of opaque quartz glass and an opaque component produced by the process
11/29/2001DE10024857A1 Production of a partially single crystalline silicon carbide layer in a silicon wafer comprises preparing a silicon wafer, implanting carbon ions into the wafer by ion implantation, and subjecting the wafer to a thermal radiation source
11/28/2001EP0633997B1 A rapid thermal processing apparatus for processing semiconductor wafers
11/22/2001US20010043903 A three-dimensional faceted diamond crystal having a dopant of a greater concentration near the outer surface than in the center where the concentration is at a minimum of 5 micro-meter below the surface; high compressive fracture
11/22/2001US20010042742 Thermal processing apparatus having a coolant passage
11/21/2001EP1156140A1 A method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device
11/21/2001EP1155439A1 Single wafer annealing oven
11/20/2001US6319556 Reflective surface for CVD reactor walls
11/19/2001CA2348124A1 A method for the heat treatment of a znse crystal substrate, heat treated substrate and light emission device
11/15/2001WO2001086019A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
11/14/2001EP1154039A1 A rapid thermal processing apparatus for processing semiconductor wafers
11/08/2001US20010039098 Method for fabricating silicon-on-insulator material
11/07/2001CN1321333A Wafer holder
11/01/2001WO2001082346A1 Method for fabricating silicon-on-insulator
10/2001
10/30/2001US6310327 Rapid thermal processing apparatus for processing semiconductor wafers
10/30/2001US6308738 Drafting apparatus
10/18/2001DE10115937A1 Verdampfer zum Erzeugen von Speisegas für eine Lichtbogenkammer Evaporator for generating feed gas for an arc chamber
10/16/2001US6302962 Diffusion system having air curtain formation function for manufacturing semiconductor devices and method of controlling the same
10/11/2001WO2001075196A1 Method and device for making substrates
10/11/2001US20010029108 Substrate processeing apparatus, substrate processing method and electronic device manufacturing method
10/10/2001EP1142004A1 Method for boron doping wafers using a vertical oven system
10/04/2001WO2001072104A1 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals
10/04/2001EP1138060A1 Gas driven rotating susceptor for rapid thermal processing (rtp) system
09/2001
09/26/2001EP1135659A1 Apparatus and method for thermal processing of semiconductor substrates
09/26/2001EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials
09/25/2001US6294223 Method for ion implantation induced embedded particle formation via reduction
09/20/2001WO2001068559A1 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating.
09/13/2001WO2001004940A8 Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
09/13/2001US20010020439 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates
09/12/2001EP1132506A1 Thermal processing apparatus
09/11/2001US6287112 Wafer boat
09/06/2001US20010019877 Method of forming silicon-contained crystal thin film
09/04/2001US6284051 Cooled window
09/04/2001US6283175 Enveloping device and vertical heat-treating apparatus for semiconductor process system
08/2001
08/28/2001US6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type
08/28/2001US6280183 Substrate support for a thermal processing chamber
08/23/2001US20010016306 Method for purging a furnace and furnace assembly
08/23/2001US20010015168 Optimized silicon wafer gettering for advanced semiconductor devices
08/16/2001WO2001059189A1 Quartz member for semiconductor manufacturing equipment and method for metal analysis in quartz member
08/08/2001EP0970337B1 Method for cooling a furnace, and furnace provided with a cooling device
08/02/2001US20010010307 Thermal processing apparatus
07/2001
07/25/2001EP1117968A1 Method and apparatus for thermal processing of semiconductor substrates
07/24/2001US6264467 Micro grooved support surface for reducing substrate wear and slip formation
07/12/2001US20010007241 Improved purity silicon wafer for use in advanced semiconductor devices
07/12/2001US20010007240 High efficiency silicon wafer optimized for advanced semiconductor devices
07/03/2001US6254686 Vented lower liner for heating exhaust gas from a single substrate reactor
06/2001
06/27/2001EP1110917A2 Method of producing opaque silica glass and opaque elements produced by the process
06/26/2001US6251835 Surface planarization of high temperature superconductors
06/13/2001EP1106715A1 Self aligning non contact shadow ring process kit
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