Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
05/2005
05/06/2005CA2542704A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
05/05/2005US20050092244 Diffusion system
05/05/2005US20050092242 Staggered ribs on process chamber to reduce thermal effects
05/04/2005CN1612296A 扩散系统 Diffusion System
05/03/2005US6887576 Quartz reacted with solution of metal compound or metal element to form silicon oxide body doped with metal elements, which when reacted with plasma gas such a fluorine, form compounds with higher boiling points than silicon fluoride
05/03/2005US6887144 Surface impurity-enriched diamond and method of making
05/03/2005CA2216998C In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
04/2005
04/26/2005US6884701 Process for fabricating semiconductor device
04/21/2005US20050082542 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
04/19/2005US6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process
04/14/2005DE10343522A1 Verfahren zur Steuerung der Behandlung eines Kristalls mit einer Flüssigkeit A method of controlling the treatment of a crystal with a liquid
04/13/2005EP1135659A4 Apparatus and method for thermal processing of semiconductor substrates
04/07/2005WO2005031344A1 Method for controlling the treatment of a crystal by means of a liquid
03/2005
03/30/2005CN1601701A Method for fabricating SIGE substrate materials on metastable insulator and substrate materials
03/24/2005US20050064632 Soi wafer and method for manufacturing soi wafer
03/24/2005US20050062388 Heat-treating methods and systems
03/24/2005US20050061232 Doped organic semiconductor materials and process for their preparation
03/24/2005DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation
03/23/2005CN2687841Y Vaporization furnace
03/23/2005CN1194380C Mfg, method of monocrystal silicon (SOI) on insulator
03/17/2005DE10222879A1 Messung niedriger Wafer-Temperaturen Measurement of low wafer temperatures
03/09/2005CN1591926A Doped organic semiconductor materials and process for their preparation
03/03/2005US20050048778 Use of thin SOI to inhibit relaxation of SiGe layers
03/02/2005CN1589513A Mid-ir microchip laser: ZnS:Cr2+ laser with saturable absorber material
02/2005
02/23/2005EP1508903A2 Endowed organic semiconductor materials and method of prepration
02/23/2005CN1190530C Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure
02/18/2005CA2476168A1 Doped organic semiconductor materials and process for their preparation
02/17/2005DE10392472T5 Halbleitererhitzungsverfahren mit gepulster Verarbeitung unter Verwendung von kombinierten Heizquellen Semiconductor heating method with pulsed processing using combined heat sources
02/16/2005CN1189928C Semiconductor heat treatment process and equipment, and semiconductor by said process heat treatment
02/15/2005US6855619 Method and device for making substrates
02/08/2005US6852601 Heat treatment method that includes a low negative pressure
02/01/2005US6849831 Pulsed processing semiconductor heating methods using combinations of heating sources
01/2005
01/27/2005US20050016470 Susceptor and deposition apparatus including the same
01/25/2005US6847015 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus
01/12/2005CN1563518A Crucible in use for equilibrium method of gas phase transmission under lithium atmosphere
01/06/2005US20050000452 Electromagnetic rotation of platter
12/2004
12/29/2004CN1559079A Heating system and method of reactor for heating atmosphere
12/29/2004CN1558002A Artificial hair crystal and preparation method thereof
12/23/2004US20040255860 Rapid thermal processing apparatus and methods
12/22/2004EP1488450A2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
12/22/2004CN1556910A System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
12/16/2004US20040250774 Wafer heater with protected heater element
12/08/2004CN2661712Y Cantilevered push-pull device in diffusion system
12/08/2004CN2661711Y Double pole push-pull device in diffusion system
12/02/2004WO2004104275A1 Electromagnetic rotation of platter
12/02/2004US20040241992 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
11/2004
11/24/2004EP1479267A1 System and method for lamp split zone control
11/17/2004CN1547757A System and method of fast ambient switching for rapid thermal processing
10/2004
10/28/2004WO2004092457A1 Semi-insulating silicon carbide produced by neutron transmutation doping
10/27/2004CN1540818A Self modulated laser crystal and preparation method
10/26/2004US6808563 Controlled partial pressure technique for adjusting lithium oxide concentration in wafers
10/20/2004CN1172351C Method and equipment for radiating ion beam, related method and its equipment
10/14/2004US20040201024 Semi-Insulating Silicon Carbide Produced by Neutron Transmutation Doping
10/14/2004DE10297368T5 System und Verfahren zum Erwärmen von Halbleiterwafern durch Optimieren der Absorption elektromagnetischer Energie System and method for heating semiconductor wafers by optimizing the absorption of electromagnetic energy
10/13/2004EP1142004B1 Method for boron doping wafers using a vertical oven system
10/12/2004US6803548 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus
10/12/2004US6803546 Thermally processing a substrate
10/12/2004US6802712 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
10/07/2004US20040198153 Wafer support system
10/06/2004CN1170012C Reactor with replaceable inner wall and colling system
10/05/2004US6800833 Electromagnetically levitated substrate support
09/2004
09/30/2004US20040188020 Wafer supporter
09/30/2004US20040187769 Method of producing SOI wafer
09/29/2004CN1533588A Method and device for thermally treating substrates
09/29/2004CN1169191C Method for implanting negative hydrogen ion and implanting apparatus
09/28/2004US6796439 Vertical type wafer supporting jig
09/28/2004CA2212653C A method for the heat treatment of znse crystal
09/23/2004WO2004066347A3 Device for producing electroconductive passages in a semiconductor wafer by means of thermomigration
09/23/2004US20040185680 Method and device for thermal treatment of substrates
09/15/2004CN1528958A Method for increasing surface-layer lattice integrity of lithiumaluminate and lithium gallium oxide crystal plate
09/09/2004US20040175956 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure
09/09/2004US20040175899 Method for fabricating silicon-on-insulator material
09/09/2004DE10082995B4 Wafer-Haltevorrichtung Wafer holding device
09/08/2004CN1528007A Method and device for doping diffusion and oxidation of silicon wafers under reduced pressure
09/08/2004CN1165637C Equipment for making semiconductor device using vacuum system
09/02/2004DE19725091B4 Laterales Transistorbauelement und Verfahren zu seiner Herstellung Lateral transistor device and method for its preparation
09/01/2004CN1526062A Wafer boat with arcuate wafer support arms
08/2004
08/26/2004WO2004059835A3 Ion beam doped lithium tantalate or similar compounds
08/26/2004US20040163596 placing lithium tantalate in an environment including zinc vapor and heating to a temperature below a Curie temperature of lithium tantalate
08/25/2004CN1163955C Susceptor for semiconductor manufacturing equipment and process for producing the same
08/24/2004CA2197400C Fabrication of sub-micron silicide structures on silicon using resistless electron beam lithography
08/19/2004DE10302653A1 Vorrichtung zur Thermomigration Apparatus for thermo-migration
08/12/2004US20040157183 Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system
08/12/2004US20040154537 Diffusion furnace used for manufacturing integrated circuits and method for cooling the diffusion furnace
08/05/2004WO2004066347A2 Device for producing electroconductive passages in a semiconductor wafer by means of thermomigration
08/05/2004US20040149715 Pulsed processing semiconductor heating methods using combinations of heating sources
08/03/2004US6770379 Susceptor for semiconductor manufacturing equipment and process for producing the same
07/2004
07/15/2004WO2004059835A2 Ion beam doped lithium tantalate or similar compounds
07/14/2004EP1436865A1 MID-IR MICROCHIP LASER: ZnS:Cr-2+ LASER WITH SATURABLE ABSORBER MATERIAL
07/08/2004DE19712556B4 Verfahren und Vorrichtung zur Wärmebehandlung eines Halbleiterwafers Method and apparatus for heat treating a semiconductor wafer
07/07/2004EP1435652A1 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
06/2004
06/24/2004WO2004053960A1 Method of producing an n-type diamond with high electrical conductivity
06/24/2004WO2004053189A1 Support system for a treatment apparatus
06/24/2004WO2004053188A1 Susceptor system
06/24/2004WO2004053187A1 Susceptor system________________________
06/22/2004US6753506 System and method of fast ambient switching for rapid thermal processing
06/08/2004US6746908 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
06/02/2004CN1501445A Semiconductor device manufacturing apparatus employing vacuum system
05/2004
05/27/2004WO2004044962A1 Forced convection assisted rapid thermal furnace
05/25/2004US6740196 RTA chamber with in situ reflective index monitor
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 ... 23