C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

Patents for C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
08/2006
08/16/2006	CN1269999C Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
08/03/2006	WO2006081104A2 Semiconductor wafer boat for a vertical furnace
08/02/2006	CN1267589C Atomic layer doping apparatus and method
07/2006
07/26/2006	EP1683201A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
07/26/2006	CN1807705A Method of producing a dopant gas species
07/19/2006	EP1681714A1 Vertical heat treatment device
07/12/2006	CN1263901C Preparation method of near stoichiometric metering ratio lithium niobate wafer
06/2006
06/29/2006	DE102004060624A1 Halbleiterscheibe mit epitaktisch abgeschiedener Schicht und Verfahren zur Herstellung der Halbleiterscheibe Semiconductor wafer having epitaxially deposited layer and method for manufacturing the semiconductor wafer
06/22/2006	US20060130743 Low temperature load and bake
06/21/2006	CN1789501A Method for preparing diluted magnetic semiconductor Ga1-xMnxSb monocrystal
06/21/2006	CN1260402C Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method
06/14/2006	EP1668356A1 Method for controlling the treatment of a crystal by means of a liquid
06/14/2006	DE20221268U1 Chamber for use with gas delivery apparatus for atomic layer deposition, includes chamber lid having bottom surface that is shaped and sized to cover receiving surface of substrate support
06/08/2006	US20060118048 Susceptor system
06/07/2006	EP1300380A4 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating.
06/07/2006	CN1258500C Adhesive composite coating for diamond and diamond-containing materials and method for producing coating
06/06/2006	US7056389 Method and device for thermal treatment of substrates
05/2006
05/17/2006	EP1261761B1 Quartz member for semiconductor manufacturing equipment and method for metal analysis in quartz member
05/10/2006	EP1655530A2 Thermal insulation for high temperature installations
05/10/2006	EP1135659B1 Apparatus and method for thermal processing of semiconductor substrates
05/02/2006	US7038173 Heat substrates; positioning lamps perpendicular with reflector; efficient radiation; ring of reflective light; uniform temperature
04/2006
04/26/2006	CN1763266A Process for preparing gas phase doped float-zone silicon monocrystal for solar cell
04/25/2006	US7033563 Method for reducing oxygen component and carbon component in fluoride
04/20/2006	US20060081187 Susceptor system
04/04/2006	US7022403 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating
04/04/2006	CA2141131C Conversion of doped polycrystalline material to single crystal material
03/2006
03/21/2006	US7015422 System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
03/16/2006	US20060057403 Use of thin SOI to inhibit relaxation of SiGe layers
03/16/2006	US20060054091 Support system for a treatment apparatus
03/08/2006	EP1631703A1 Electromagnetic rotation of platter
03/02/2006	DE102004039197A1 Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium und derartige Halbleiterscheiben A process for the production of doped semiconductor wafers of silicon and semiconductor wafers such
03/01/2006	EP1630261A2 Substrate holder for a vapour deposition system
03/01/2006	EP1630260A2 Magnetic latch for a vapour deposition system
02/2006
02/28/2006	US7004234 Vaporizer for generating feed gas for an arc chamber
02/23/2006	WO2006018672A1 Packing tray
02/15/2006	CN1242456C Semiconductor device manufacturing apparatus employing vacuum system
01/2006
01/25/2006	CN1238578C Lithium niobate crystal waveguide preparation by ion implantation and anneal
01/24/2006	US6989058 Use of thin SOI to inhibit relaxation of SiGe layers
01/18/2006	CN1237575C Method for producing Si1 Ge film on silicon substrate
01/05/2006	WO2006000644A1 Selective doping of a material
01/05/2006	CA2574771A1 Selective doping of a material
01/04/2006	CN1716555A Method for reducing 4H-silicon carbide resistivity of oriented phosphorus ion filling (0001)
12/2005
12/28/2005	EP1436865A4 MID-IR MICROCHIP LASER: ZnS:Cr-2+ LASER WITH SATURABLE ABSORBER MATERIAL
12/28/2005	CN1714169A Support system for a treatment apparatus
12/22/2005	US20050281523 Method and structure of electric field poling of Ti indiffused LiNbO3 substrates without the use of grinding process
12/22/2005	US20050281301 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material
12/21/2005	EP1607777A1 Method of forming a waveguide by diffusing Ti into a LiNbO3 substrate and corresponding structure
12/15/2005	US20050274709 Heat treating apparatus
12/14/2005	CN1708602A Susceptor system
12/14/2005	CN1708601A Susceptor system
12/13/2005	US6974720 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
12/08/2005	DE20221269U1 Gaszuführvorrichtung zur Abscheidung atomarer Schichten The gas supply apparatus for atomic layer deposition
12/01/2005	US20050266606 Method of producing an n-type diamond with high electrical conductivity
11/2005
11/30/2005	CN2743375Y Vertical ion injection silicone carbide high temperature annealing device
11/29/2005	US6970644 Heating configuration for use in thermal processing chambers
11/16/2005	CN2740627Y Mechanism for positioning heated parts
11/15/2005	US6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping
11/08/2005	US6963692 Heat-treating methods and systems
11/02/2005	EP1590510A2 Device for producing electroconductive passages in a semiconductor wafer by means of thermomigration
11/01/2005	US6960486 Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material
10/2005
10/27/2005	US20050236395 Pulsed processing semiconductor heating methods using combinations of heating sources
10/13/2005	WO2005096356A1 Susceptor
10/13/2005	US20050223985 Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material
10/13/2005	CA2558591A1 Susceptor
10/12/2005	CN1222643C Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter
10/11/2005	US6952889 Forced convection assisted rapid thermal furnace
10/06/2005	WO2005068395A3 High purity silicon carbide articles and methods
10/05/2005	EP1581667A1 Support system for a treatment apparatus
10/05/2005	CN2730890Y Horizontal ion implantation silicon carbide high-temp. annealing device
10/05/2005	CN1678531A Method and apparatus for increasing bulk conductivity of a ferroelectric material
10/04/2005	US6951996 Pulsed processing semiconductor heating methods using combinations of heating sources
09/2005
09/29/2005	US20050214469 Method and apparatus for increasing bulk conductivity of a ferroelectric material
09/29/2005	US20050213949 Heating configuration for use in thermal processing chambers
09/15/2005	US20050201926 Method and apparatus for increasing bulk conductivity of a ferroelectric material
09/07/2005	EP1570108A1 Susceptor system
09/07/2005	EP1570107A1 Susceptor system
09/06/2005	US6941063 Heat-treating methods and systems
09/01/2005	WO2005080645A2 Diamond structure separation
08/2005
08/31/2005	EP1568072A1 Method of producing an n-type diamond with high electrical conductivity
08/23/2005	US6932957 placing lithium tantalate in an environment including zinc vapor and heating to a temperature below a Curie temperature of lithium tantalate
08/18/2005	US20050181210 Diamond structure separation
08/11/2005	US20050176217 Method to fabricate patterned strain-relaxed sige epitaxial with threading dislocation density control
08/03/2005	EP1559133A1 Forced convection assisted rapid thermal furnace
08/03/2005	CN1650670A System and method for lamp split zone control
07/2005
07/28/2005	WO2005068395A2 High purity silicon carbide articles and methods
07/28/2005	US20050161867 Gasifier structure
07/27/2005	EP1557883A1 Soi wafer and method for manufacturing soi wafer
07/21/2005	WO2005066073A1 New material and method of fabrication therefor
07/20/2005	CN1643323A Pulsed processing semiconductor heating methods using combinations of heating sources
07/07/2005	US20050148455 High purity silicon carbide articles and methods
06/2005
06/23/2005	US20050136627 Method to reduce crystal defects particularly in group III-nitride layers and substrates
06/22/2005	CN1630037A Method for transversely period doping of semiconductor material and equipment thereof
06/16/2005	US20050126496 Wafer carrier for growing GaN wafers
06/15/2005	CN1628370A Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
06/01/2005	EP1534633A1 Method and apparatus for increasing bulk conductivity of a ferroelectric material
05/2005
05/26/2005	US20050109275 Reactor chamber
05/17/2005	US6893498 Method and apparatus for adjusting lithium oxide concentration in wafers
05/11/2005	EP1529855A2 Diffusion system
05/06/2005	WO2005041305A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
05/06/2005	WO2005041284A1 Vertical heat treatment device

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