Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/2007
05/02/2007CN1955345A Preparation method of calcium sulfate whisker
05/02/2007CN1313656C II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
05/02/2007CN1313655C Method for growing high-mobility gallium nitride epitaxial film
05/02/2007CN1313654C Method for growing high-resistance gallium nitride epitaxial film
05/02/2007CN1313653C Growth of very uniform silicon carbide external layers
05/02/2007CN1313652C Production method for compound semiconductor single crystal
05/02/2007CN1313651C Epitaxial silicon wafers substantially free of grown-in defects
05/02/2007CN1313650C Growing method of rare-earth thiooxide crystal
05/02/2007CN1313649C Porous magnesia whisker preparation method
05/02/2007CN1313400C Method for preparing diamond from graphite by inner shell electron excitation
05/01/2007US7211337 Compound crystal and method of manufacturing same
05/01/2007US7211146 Powder metallurgy crucible for aluminum nitride crystal growth
05/01/2007US7211145 Substrate processing apparatus and substrate processing method
05/01/2007US7211143 Sacrificial template method of fabricating a nanotube
05/01/2007US7211142 CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/01/2007US7211141 Method for producing a wafer
05/01/2007CA2227185C Marking diamond
04/2007
04/26/2007WO2007046287A1 Apparatus and process for manufacturing semiconductor single crystal
04/26/2007WO2007046176A1 Ferroelectric single crystal, surface acoustic filter making use of the same and process for producing the filter
04/26/2007WO2007046165A1 Process for producing diamond having structure of acicular projection array disposed on surface thereof, diamond material, electrode and electronic device
04/26/2007US20070092980 Method of fabricating GaN
04/26/2007US20070092647 Boron doped diamond
04/26/2007US20070090341 Group i-vii semiconductor single crystal thin film and process for producing same
04/26/2007DE102005049932A1 Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation
04/25/2007EP1777756A1 Semiconductor light emitting device, wafer for semiconductor light emitting device, and method of preparing the same
04/25/2007EP1777325A2 Single crystalline a-plane nitride semiconductor wafer having orientation flat
04/25/2007EP1777324A1 Thin film material and method for manufacturing the same
04/25/2007CN1954445A Piezoelectric single crystal element and method for fabricating the same
04/25/2007CN1954101A Method and apparatus for producing group III nitride crystal
04/25/2007CN1952223A Condensed aromatic organic semiconductor single-crystal micro/nano materials and their preparation method and application
04/25/2007CN1952222A Method for growth of sulfide crystal containing alkali metal, gallium or indium
04/25/2007CN1312728C 电子器件基片结构和电子器件 Electronic devices on the substrate structure and electronic devices
04/25/2007CN1312332C Oxide high-temperature superconductor and its production method
04/25/2007CN1312331C Method for producing single crystal of composite oxide
04/25/2007CN1312330C Process for preparing alpha-MnO2 single crystal nano stick
04/25/2007CN1312329C Method for reducing oxygen component and carbon component in fluoride
04/25/2007CN1312328C Method for preparing monocrystalline silicon nano membrane for nano photon technique
04/25/2007CN1312327C Silicon wafer for epitaxial growth, epitaxial wafer, and its manufacturing method
04/25/2007CN1312325C Method for developping monocrystalline iron nanometer thread on silicon substrate
04/25/2007CN1312324C Process and its device for preparing fibrous zinc oxide whisker
04/24/2007US7208196 Oxidation of silicon nitride; overcoating metal substrate; high temperature superconductivity
04/24/2007US7208044 Topotactic anion exchange oxide films and method of producing the same
04/24/2007US7208043 Silicon semiconductor substrate and preparation thereof
04/24/2007US7208042 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method
04/19/2007US20070087576 Substrate susceptor for receiving semiconductor substrates to be deposited upon
04/19/2007US20070087539 Method for manufacturing compound semiconductor epitaxial substrate
04/19/2007US20070085170 Single crystalline a-plane nitride semiconductor wafer having orientation flat
04/19/2007DE102005049477A1 Production of gallium arsenic single crystalline material includes growing the crystalline material in a multiple heating system by solidification of melt of the material using vertical gradient freezing- or vertical Bridgman procedure
04/18/2007EP1775356A2 Crystal growth apparatus and manufacturing method of group III nitride crystal
04/18/2007EP1775355A2 Method of growing a gallium nitride single crystal
04/18/2007EP1774378A1 Method for producing a photonic crystal comprised of a material with a high refractive index
04/18/2007EP1774069A1 Apparatus for growing single crystals from melt
04/18/2007EP1774068A1 Method of growing single crystals from melt
04/18/2007EP1774056A1 Method for the deposition of layers containing silicon and germanium
04/18/2007EP1709217B1 Process to produce a cu(in,ga)se2 single crystal powder and monograin membrane solarcell comprising this powder
04/18/2007EP1540047A4 Oh and h resistant silicon material
04/18/2007CN1950549A Charge restraining method and apparatus for piezoelectric oxide single crystal
04/18/2007CN1950548A Method of growing SiC single crystal and SiC single crystal grown by same
04/18/2007CN1950298A Inorganic mesoporous material having chiral twisted structure and process for producing the same
04/18/2007CN1948127A Single crystal zinc oxide nanometer yarn array/poly crystal aluminium liner compound body and its preparation method
04/18/2007CN1311518C Substrate for electronic apparatus, Method for producing substrate of electronic apparatus and electronic apparatus
04/18/2007CN1311106C Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
04/17/2007US7205033 Method for forming polycrystalline silicon film of polycrystalline silicon TFT
04/17/2007US7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it
04/12/2007WO2007040081A1 Single-crystal semiconductor fabrication device and fabrication method
04/12/2007WO2007040002A1 Method for producing semiconductor wafer and system for determining cutting position of semiconductor ingot
04/12/2007US20070082465 Method of fabricating GaN substrate
04/12/2007US20070082149 Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method
04/12/2007US20070079752 Coloured diamond
04/11/2007EP1772541A1 Gallium nitride thin film on sapphire substrate having reduced bending deformation
04/11/2007EP1772540A1 Method for preparing crystal of nitride of metal belonging to 13 group of periodic table and method for manufacturing semiconductor device using the same
04/11/2007EP1772539A1 Silicon carbide single crystal and single crystal wafer
04/11/2007EP1772538A1 Process and apparatus for producing single crystal
04/11/2007EP1772464A2 Methods of identifying indirect agonists of IGF-1
04/11/2007EP1771556A2 Determination of a phosphorylation site in ppiase domain of pin1 and uses therefor
04/11/2007EP1437327B1 Method for producing silicon
04/11/2007CN1947042A Solution to thermal budget
04/11/2007CN1946882A Single crystals and methods for fabricating same
04/11/2007CN1946634A Nanostructures and method for making such nanostructures
04/11/2007CN1946628A Synthesis of platinum and palladium quantum well size nano-particles
04/11/2007CN1310286C Method of manufacturing III-V family compound semiconductor
04/11/2007CN1310257C Magnetic material with bidirectional shape memory effect and single-crystal producing method thereof
04/11/2007CN1309880C Metal strip for epitaxial coating and method for production thereof
04/11/2007CN1309861C Device for supplying gas for epitaxial growth
04/10/2007US7201801 Heater for manufacturing a crystal
04/10/2007CA2188300C Non-linear crystals and uses thereof
04/05/2007WO2007038710A2 Intra-cavity gettering of nitrogen in sic crystal growth
04/05/2007WO2007038219A2 Synthesis of columnar hydrogel colloidal crystals in water-organic solvent mixture
04/05/2007WO2007037052A1 Single crystal silicon pulling apparatus, method for preventing contamination of silicon melt, and apparatus for preventing contamination of silicon melt
04/05/2007WO2007036950A1 Single-source precursor for semiconductor nanocrystals
04/05/2007WO2007036588A1 Method and set of tools for checking the crystallisation conditions of biological macromolecules
04/05/2007WO2007018555A3 Ultratough cvd single crystal diamond and three dimensional growth thereof
04/05/2007WO2007016193A3 Nanoparticle synthesis and associated methods
04/05/2007WO2006113719A3 Methods of preparing nanoparticles by reductive sonochemical synthesis
04/05/2007WO2006082085A3 Method and device for producing oriented solidified blocks made of semi-conductor material
04/05/2007US20070077192 Tough diamonds and method of making thereof
04/05/2007DE102005045339A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/05/2007DE102005045338A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/05/2007DE102005045337A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/04/2007EP1770190A1 METHOD FOR PRODUCING RE-Ba-Cu-O OXIDE SUPERCONDUCTOR