| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/04/2007 | EP1770189A2 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 04/04/2007 | EP1769867A1 Method for producing metal fine particle, metal fine particle produced thereby, composition containing same, light absorbing material, and application thereof |
| 04/04/2007 | EP1769105A1 Bulk mono-crystalline gallium-containing nitride and its application |
| 04/04/2007 | CN2885891Y Temperature control furnace for growth of arsenide gallium monocrystal |
| 04/04/2007 | CN1942783A Scintillator material based on rare earth with a reduced nuclear background |
| 04/04/2007 | CN1942611A Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device |
| 04/04/2007 | CN1942610A Ultrahard diamonds and method of making thereof |
| 04/04/2007 | CN1942604A Inlet system for an MOCVD reactor |
| 04/04/2007 | CN1941290A Unpolished semiconductor wafer and manufacture method thereof |
| 04/04/2007 | CN1940150A Method of manufacturing silicon wafer |
| 04/04/2007 | CN1308739C Farady rotator and optical device comprising same, and antireflection film and optical device comprising same |
| 04/04/2007 | CN1308502C Synthesis method for nonlinear optical crystal Nb2O5:KTP |
| 04/04/2007 | CN1308499C Process for preparing titanium doped lithium aluminate wafer |
| 04/04/2007 | CN1308498C Microwave hydrothermal synthesis method for nanometer crystal strontium titanate barium |
| 04/04/2007 | CN1308415C Photoluminescence crystal material strontium borate lithium |
| 04/04/2007 | CN1308243C Preparation process of metal oxide and sulfide nanometer linear array |
| 04/03/2007 | US7200493 Method for screening crystallization or amorphous stage conditions for molecules |
| 04/03/2007 | US7199015 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 04/03/2007 | US7198970 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 04/03/2007 | US7198738 Can be used as high-performance wavelength converting crystal; optical parametric oscillator |
| 04/03/2007 | US7198673 Optical lithography fluoride crystal annealing furnace |
| 04/03/2007 | US7198672 Drop tube type granular crystal producing device |
| 04/03/2007 | US7198671 Layered substrates for epitaxial processing, and device |
| 04/03/2007 | CA2192232C Zeolite layers with controlled crystal width and preferred orientation grown on a growth enhancing layer |
| 03/29/2007 | WO2007034808A1 Substrate and method for manufacturing same |
| 03/29/2007 | WO2007034665A1 Diamond covered substrate, filtration filter, and electrode |
| 03/29/2007 | US20070071964 Nano-particle device and method for manufacturing nano-particle device |
| 03/29/2007 | DE102005044697A1 Calcium fluoride mono-crystal for production of optical products, lasers, computer chips and integrated circuits, is doped with Al, Ga, In or Tl-ions |
| 03/28/2007 | EP1768192A2 Light-emitting diode and method for manufacturing the same |
| 03/28/2007 | EP1768181A1 Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
| 03/28/2007 | EP1766676A1 Hybrid epitaxy support and method for making same |
| 03/28/2007 | EP1766667A1 METHOD FOR MATERIAL GROWTH OF GaN-BASED NITRIDE LAYER |
| 03/28/2007 | EP1766108A1 Formation of nanowhiskers on a substrate of dissimilar material |
| 03/28/2007 | EP1766107A2 Process for producing a crystalline silicon ingot |
| 03/28/2007 | EP1639157B1 Method of synthesising a crystalline material and material thus obtained |
| 03/28/2007 | CN1938605A An optical medium, an optical lens and a prism |
| 03/28/2007 | CN1938458A Method for producing iii group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby |
| 03/28/2007 | CN1938457A Growing method of gallium nitride single crystal and gallium nitride single crystal |
| 03/28/2007 | CN1936652A Ffaraday rotator |
| 03/28/2007 | CN1936119A InP monocrystal ingot annealing treatment method |
| 03/28/2007 | CN1936118A Method for synthesizing magnetic nano crystal material from nematode |
| 03/28/2007 | CN1936117A Method for synthesizing hexa-prism silicon carbide nano bar |
| 03/28/2007 | CN1936116A Method for preparing derdritical barium molybdate nano crystal |
| 03/28/2007 | CN1936115A Method for preparing aluminate long-persistence luminous plate |
| 03/28/2007 | CN1936114A Method for preparing flake alpha Al2O3 monocrystal grains at low temperature |
| 03/28/2007 | CN1936113A Low defect density, ideal oxygen precipitating silicon |
| 03/28/2007 | CN1936112A 低缺陷浓度的硅 A low defect density silicon |
| 03/28/2007 | CN1936111A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer |
| 03/28/2007 | CN1936110A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/28/2007 | CN1936109A Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/28/2007 | CN1936107A Lead tungstate crystal growthfurnace with observation and exhuast device |
| 03/28/2007 | CN1936106A Method for treating crystal growth raw material |
| 03/28/2007 | CN1936105A Method for preparing proton crystal |
| 03/28/2007 | CN1936104A Magnesium borate whisker hydrothermal synthesis preparation method |
| 03/28/2007 | CN1935649A Method for preparing polycrystalline silicon using chloro-free alkoxy silane |
| 03/28/2007 | CN1935648A Method for preparing polycrystalline silicon for solarcell from rice husk |
| 03/28/2007 | CN1307690C Method for making polysilicon layer |
| 03/28/2007 | CN1307330C La1-XPbXMnO3 compound ordered nano-line array and method for preparing same |
| 03/28/2007 | CN1307328C Method for preparation of unidimensional monocrystal titanium dioxide nano material |
| 03/28/2007 | CN1307013C Method and equipment for successive oriented solidification casting and wire rod or plate and belt material thereby |
| 03/27/2007 | US7195993 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches |
| 03/27/2007 | US7195669 Method of producing silicon monocrystal |
| 03/27/2007 | US7195668 Crucible for the growth of silicon single crystal and process for the growth thereof |
| 03/22/2007 | WO2007031158A1 Laboratory temperature control device with top face |
| 03/22/2007 | WO2006037311A3 Method for increasing the conversion of group iii metals to group iii nitrides in a fused metal containing group iii elements |
| 03/22/2007 | US20070066033 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended) |
| 03/21/2007 | EP1258029B1 Method for treating a diamond surface and corresponding diamond surface |
| 03/21/2007 | CN1934475A Self assembled three-dimensional photonic crystal |
| 03/21/2007 | CN1934294A Method of solid-phase flux epitaxy growth |
| 03/21/2007 | CN1933204A Semiconductor light emitting device and device |
| 03/21/2007 | CN1933203A Semiconductor light emitting device and device |
| 03/21/2007 | CN1933195A Nitride semiconductor substrate and nitride semiconductor device |
| 03/21/2007 | CN1933105A Semiconductor device and method for manufacturing the same |
| 03/21/2007 | CN1933098A Mask for continuous transverse crystallizing technology and method using the same mask |
| 03/21/2007 | CN1932087A Bridgman-stockbarge process for growing scintillation crystal LaCl3:Ce3+ |
| 03/21/2007 | CN1932086A Prepn process of polycrystalline Zinc oxide film material |
| 03/21/2007 | CN1306075C Anion and cation co-doped PbWO4 crystal and its growth method |
| 03/21/2007 | CN1306074C Crucible lowering growth technology of Teo2 monocrystal |
| 03/21/2007 | CN1306073C Visual low oblique zone melting growth device of crystals and growth method therefor |
| 03/21/2007 | CN1305763C Process of producing multicrystalline silicon substrate and solar cell |
| 03/20/2007 | US7192885 Etching with a solution consisting of water, concentrated hydrofluoric acid and concentrated nitric acid at a temperature between 0 and 15 degrees Celsius |
| 03/20/2007 | US7192483 substrate in a vacuum atmosphere is exposed to a reactive gas mixture which is excited by means of a plasma discharge. |
| 03/20/2007 | US7192482 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 03/20/2007 | US7192481 Radiation detector |
| 03/15/2007 | WO2007029754A1 Alumina film substrate and its fabrication method |
| 03/15/2007 | WO2007029744A1 Group iii/v nitride semiconductor, photocatalyst semiconductor element, photocatalytic redox reaction apparatus, and photoelectrochemical reaction execution method |
| 03/15/2007 | WO2007029735A1 Vapor deposition apparatus, vapor deposition method, optical element, and chiral sensor |
| 03/15/2007 | WO2007029655A1 Process for producing hexagonal nitride single crystal, hexagonal nitride semiconductor crystal, and process for producing hexagonal nitride single-crystal wafer |
| 03/15/2007 | WO2007029269A1 Synthesis of large homoepitaxial monocrystalline diamond |
| 03/15/2007 | WO2007028326A1 LARGE-SIZE KBe2(BO3)F3 CRYSTAL, ITS PREPARATION METHOD AND FREQUENCY CONVERTER BY USING IT |
| 03/15/2007 | WO2006136929A3 High colour diamond layer |
| 03/15/2007 | WO2006135688A3 Polar surface preparation of nitride substrates |
| 03/15/2007 | WO2006108191A3 Seventy five millimeter silicon carbide wafer with low warp, bow, and ttv |
| 03/15/2007 | US20070056465 Rapid generation of nanoparticles from bulk solids at room temperature |
| 03/15/2007 | DE19802131B4 Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material A process for preparing a monocrystalline layer of a conductive or semi-conductive material |
| 03/15/2007 | DE10393956T5 Diamantbeschichtetes Silizium und Elektrode A diamond-coated silicon and electrode |
| 03/15/2007 | DE102005043623A1 Herstellung hochhomogener spannungsarmer Einkristalle durch Ziehen, eine Vorrichtung hierfür sowie die Verwendung solcher Kristalle Production of highly homogeneous low-stress single crystals by drawing, an apparatus therefor and the use of such crystals |
| 03/15/2007 | DE102005043398A1 Manufacturing a titanium sapphire laser crystal using a mixture of carbon monoxide and an inert gas |
| 03/15/2007 | CA2515886A1 A structure basis for integron integrase cassette excision: implications for antibiotic resistance |
| 03/14/2007 | EP1762643A2 Method and apparatus to obtain homogene and low-strained crystals by pulling |