Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2007
12/19/2007CN101089244A Molten-salt growth method for zinc oxide single crystal
12/19/2007CN101089243A Molten-salt method for growing zinc oxide xingle crystal using bismuth borate as flux
12/19/2007CN101089242A Doped neodymium lithium lanthanum barium tungstate laser crystal and its preparation method and usage
12/19/2007CN101089241A Growing method of potassium vanadate non-linear optical crystal
12/19/2007CN101089240A Ytterbium mixed yttrium calcium borate tunable laser crystal and its preparation and application
12/19/2007CN101089239A Lutecium lithium fluoride color-center laser crystal and waveguide crystal material prepared by femtosecond laser induction
12/19/2007CN101089238A Calcium fluoride intermediate infrared laser crystal material of dysprosium activated
12/19/2007CN101089237A Preparing chlorine lead potassium color-center laser crystal and waveguide crystal material by femtosecond laser induction
12/19/2007CN101089236A Lutecium lithium fluoride intermediate infrared laser crystal of dysprosium activated
12/19/2007CN101089235A Intermediate, infrared laser crystal material of dysprosium activated
12/19/2007CN101089234A Femtosecond laser induction preparing bromine lead potassium color-center laser crystal and waveguide crystal material
12/19/2007CN101089233A Manufacturing equipment for polysilicon ingot
12/19/2007CN100356642C C-MgxZn1-xO/MgO multi-quantum sink heterogeneous structural materials and producing process thereof
12/19/2007CN100356524C Method for producing semi-insulating resistivity in high purity silicon carbide crystals
12/19/2007CN100355949C Protein crystallization apparatus, method of protein crystallization, protein crystallizing agent and process for preparing the same
12/19/2007CN100355948C Method for synthesizing bionic silicon carbide crystal whisker
12/19/2007CN100355657C Method and device for in situ preparing zinc oxide nanometer crystal using coaxial oxygen transporting laser
12/18/2007US7309525 Inorganic nanocrystals with organic coating layer, their method of manufacture and materials constituted by said nanocrystals
12/18/2007US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
12/18/2007US7309476 Diamondoid-based components in nanoscale construction
12/18/2007US7309394 Ultraviolet light-emitting device in which p-type semiconductor is used
12/18/2007US7309392 Lithium niobate substrate and method of producing the same
12/13/2007WO2007143743A2 High volume delivery system for gallium trichloride
12/13/2007WO2007143076A2 Nanoparticles and coated nanoparticles
12/13/2007WO2007143072A2 Wet etch suitable for creating square cuts in si and resulting structures
12/13/2007WO2007142026A1 Method of judging cop occurrence cause for single crystal silicon wafer
12/13/2007WO2007142024A1 Single-crystal silicon wafer cop evaluation method
12/13/2007WO2007141333A1 Process of making a microelectronic light-emitting device on semi-conducting nanowire formed on a metallic substrate
12/13/2007WO2007073494A3 Lower pressure synthesis of diamond material
12/13/2007US20070286952 Method and Structure of Strain Control of Sige Based Photodetectors and Modulators
12/13/2007US20070284696 Nitride Semiconductor Substrate
12/13/2007DE102004024924B4 Verfahren zum Herstellen polykristallinen Siliciums, Verfahren zum Herstellen einer Ausrichtungsmarkierung, sowie Verfahren zum Herstellen eines Schaltelements A method for producing polycrystalline silicon, methods of making an alignment mark, as well as methods for producing a switching element
12/13/2007DE10137856B4 Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium Produced by crucible-free zone pulling silicon single crystal
12/13/2007DE10066124B4 Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates
12/12/2007EP1865095A2 Method of growing gallium nitride crystal
12/12/2007EP1864956A1 Light-transparent material and process for producing the same
12/12/2007EP1560280B1 Thin film multilayer body, electronic device using such thin film multilayer body, actuator, and method for manufacturing actuator
12/12/2007EP1510602B1 Drop tube type granular crystal producing device
12/12/2007CN101086963A Method of growing gallium nitride crystale
12/12/2007CN101086084A Yb and Zn double-doped lead tungstate crystal and its preparation method
12/12/2007CN100354459C EFG crystal growth apparatus and method
12/12/2007CN100354458C High pressure high temperature growth of crystalline group III metal nitrides
12/12/2007CN100354229C A ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof
12/11/2007US7306682 Single-crystal Ni-based superalloy with high temperature strength, oxidation resistance and hot corrosion resistance
12/11/2007US7306674 Nucleation of diamond films using higher diamondoids
12/11/2007US7306671 Diamondoid-containing low dielectric constant materials
12/06/2007WO2007139184A1 Plasma display panel and method for manufacturing the same
12/06/2007WO2007139183A1 Plasma display panel and method for manufacturing the same
12/06/2007WO2007059251A3 New diamond uses/applications based on single-crystal cvd diamond produced at rapid growth rate
12/06/2007US20070281481 Controlled growth of gallium nitride nanostructures
12/06/2007US20070281104 Process for resurfacing a monocrystalline or directionally solidified metallic piece
12/06/2007US20070277725 Process For Preparing Caf2 Lens Blanks Especially For 193 Nm And 157 Nm Lithography With Minimized Deffects
12/05/2007EP1863074A2 Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
12/05/2007EP1862571A1 Melt surface position monitoring apparatus in silicon single crystal growth process
12/05/2007EP1862570A1 Crystal growing crucible
12/05/2007EP1862433A1 Personalised synthetic diamond of different colours, obtained from (living or dead) human or animal keratin and production method thereof
12/05/2007CN101084330A Low micropipe 100 mm silicon carbide wafer
12/05/2007CN101084329A Pr-containing single crystal for scintillator, process for producing the same, radiation detector and inspection apparatus
12/05/2007CN101084290A Fluorescent material and method for preparation thereof, radiation detector using fluorescent material, and x-ray ct device
12/05/2007CN101082138A Method for synthesizing CdTe semiconductor fluorescence nanocrystalline material and synthesizing system thereof
12/05/2007CN100353193C Optical waveguide material and optical waveguide
12/05/2007CN100352973C Yb-dopped strontium-lanthanum aluminate-tantalate laser crystal and its prepn
12/04/2007US7303828 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device
12/04/2007US7303815 Multilayer ribbon; epitaxial deposits; laser ablation
12/04/2007US7303632 Vapor assisted growth of gallium nitride
12/04/2007US7303630 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
12/04/2007US7303629 Apparatus for pulling single crystal
12/04/2007US7303627 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby
12/04/2007US7303626 Three-dimensional periodic structure and method for producing the same
12/04/2007CA2244262C Growth of colorless silicon carbide crystals
11/2007
11/29/2007WO2007135965A1 Method for producing silicon carbide single crystal
11/29/2007WO2007091920B1 A method of growing semiconductor heterostructures based on gallium nitride
11/29/2007US20070276105 Catalyst Support
11/29/2007US20070275844 Non-crazing, for use in jewelry and ornaments; made by adding tetraethylorthosilicate to homogenous mixture of absolute ethanol (99.9%), concentrated nitric acid, distilled water, and an inorganic salt, gelating the clear sol, drying and sintering; similar physical and chemical properties as natural opal
11/29/2007US20070275333 Method for Controlling the Treatment of a Crystal with a Liquid
11/29/2007US20070272941 Method For Producing III Group Element Nitride Crystal, Production Apparatus For Use Therein, And Semiconductor Element Produced Thereby
11/29/2007US20070272898 Solid Solution Material Of Rare Earth Element Fluoride (Polycrystal And Single Crystal), And Method For Preparation Thereof, And Radiation Detector And Test Device
11/28/2007EP1860213A1 Method and apparatus for producing group iii nitride crystal
11/28/2007EP1859487A2 Photovoltaic cell containing a semiconductor photovoltaically active material
11/28/2007EP1859477A1 Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions
11/28/2007EP1171211A4 Efg crystal growth apparatus
11/28/2007CN200981899Y Guide mould structure for growing formed single-crystal aluminum oxide
11/28/2007CN101080515A Process for producing single crystal and process for producing annealed wafer
11/28/2007CN101078133A Neodymium-doping lanthanum calcium vanadate laser crystal and its preparation method and use
11/28/2007CN100352004C Substrate for growing gallium nitride, itsproducing method and method for preparing gallium nitride substrate
11/28/2007CN100352002C Method of growing nitride single crystal, nitride semiconductor light emitting device, method of manufacturing the same
11/28/2007CN100351652C Three-dimensional periodic structure and process for producing the same
11/28/2007CN100351436C Lithium tantalate substrate and method for producing same
11/28/2007CN100351435C Process for preparing gas phase doped float-zone silicon monocrystal for solar cell
11/28/2007CN100351169C Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof
11/27/2007US7300520 Contacting each of a plurality of reagents in separate compartments with compound, wherein each reagent has a predetermined concentration of two types of precipitating agents comprising salt and polyoxyethylene glycol; human immunodeficiency polypeptide viral polypeptides;
11/27/2007US7300518 Apparatus and method for producing single crystal, and silicon single crystal
11/22/2007WO2007133358A2 Semiconductor buffer structures
11/22/2007WO2007133025A1 Apparatus and methods for preparation of high-purity silicon rods using mixed core means
11/22/2007WO2007132644A1 Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor element employing the same
11/22/2007US20070269965 Indium Nitride Layer production
11/22/2007US20070269361 Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
11/22/2007US20070267947 Piezoelectric Single Crystal and Piezoelectric Single-Crystal Device and Method for Manufacturing the Same
11/22/2007US20070266930 Method for Producing a Silicon Single Crystal and a Silicon Single Crystal
11/21/2007EP1857575A2 Semiconductor nanocrystal-metal complex and method of preparing the same