Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
07/2007
07/26/2007WO2007083576A1 Thermoelectric material, thermoelectric converter using same, and electronic device and cooling device comprising such thermoelectric converter
07/26/2007WO2007083477A1 Method for manufacturing silicon single crystal wafer
07/26/2007WO2007083476A1 Process for producing silicon single crystal wafer
07/26/2007WO2007083155A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
07/26/2007WO2007083044A1 Symmetrical pulling of composite ribbons
07/26/2007US20070169857 Single crystal wire and manufacturing method of the same
07/26/2007CA2636471A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
07/25/2007EP1811066A2 Epitaxial wafer and method for production of epitaxial wafer
07/25/2007EP1811065A1 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same
07/25/2007EP1809793A2 Selection and deposition of nanoparticles using co2-expanded liquids
07/25/2007EP1809788A1 Method and apparatus for growing a group (iii) metal nitride film and a group (iii) metal nitride film
07/25/2007CN1328417C Method for by composition cladding germanium nanometer wire
07/25/2007CN1328415C Equipment of lifting phthalocganine compound mono crystal growth by evaporation process
07/25/2007CN101006373A Process for producing photonic crystals
07/25/2007CN101006208A Manufacture of cadmium mercury telluride on patterned silicon
07/25/2007CN101006207A Method for producing AIN single crystal and aln single crystal
07/25/2007CN101006206A Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
07/25/2007CN101006205A Melter assembly and method for charging a crystal forming apparatus with molten source material
07/25/2007CN101006026A Translucent material and method for manufacturing the same
07/25/2007CN101005017A Method of forming a semiconductor thin film
07/25/2007CN101003913A Method for developing large-scale fiber of organic molecular crystal
07/25/2007CN101003912A Method for synthesizing ordered array of single crystal Sic Nano filament with small diameter through heat evaporation method
07/25/2007CN101003911A Method for preparing crystalline material of iron lithium phosphate
07/25/2007CN101003910A Zn0 crystallite material, and preparation method
07/25/2007CN101003385A Method for preparing Nano tube of titanate
07/24/2007US7247583 Manufacturing method for strained silicon wafer
07/24/2007US7247551 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
07/24/2007US7247513 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
07/24/2007US7247203 Process for producing crystalline nucleus and method of screening crystallization conditions
07/19/2007WO2007080881A1 Method for manufacturing aluminum nitride crystal, aluminum nitride crystal, aluminum nitride crystal substrate and semiconductor device
07/19/2007WO2007080684A1 Anisotropically shaped ceramic particles and process for production of the same
07/19/2007WO2007079975A1 Microtips and nanotips, and method for their production
07/19/2007US20070167021 Method of Manufacturing Nitride Substrate for Semiconductors
07/19/2007US20070166967 Method for controlling conductivity of ga2o3 single crystal
07/19/2007US20070163487 A method for producing a single crystal and an apparatus for producing a single crystal
07/19/2007DE102005031692B4 Verfahren zur Herstellung eines hochohmigen Siliciumcarbid-Einkristalls A process for producing a high-resistance silicon carbide single crystal
07/18/2007EP1808514A1 Single-crystal production apparatus
07/18/2007EP1807872A1 Photovoltaic cell comprising a photovoltaic active semiconductor material
07/18/2007EP1807558A2 100 mm silicon carbide wafer with low micropipe density
07/18/2007EP1807557A1 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
07/18/2007EP1807346A2 Ultratouch cvd single crystal diamond and three dimensional growth thereof
07/18/2007EP1658519A4 Solution to thermal budget
07/18/2007CN1327486C Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method
07/18/2007CN1327484C Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
07/18/2007CN1327483C Crystal manufacturing method
07/18/2007CN1327255C Three dimensional periodic structure and method of producing the
07/18/2007CN1327048C Method for flattening surface of oxide crystal to ultra high degree
07/18/2007CN1327046C Monocrystalline Si3N4 nanometer belt and micro belt preparation method
07/18/2007CN1327045C Process for preparing silicon-calcium-magnesium whisker
07/18/2007CN1327044C Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
07/18/2007CN1327043C Prepn process of Ce-doped lanthanum oxide scintillation crystal
07/18/2007CN1327042C Method for growing single-crystal zinc oxide film by using zinc oxide buffer layer
07/18/2007CN1327040C Apparatus for growing crystal by repeating adding material and method thereof
07/18/2007CN1326654C Welding method
07/18/2007CN101002310A Nitrogen-doped silicon wafer and its manufacturing method
07/18/2007CN101001978A Susceptor
07/18/2007CN101000410A Magnetic garnet single crystal and method for producing the same as well as optical element using the same
07/18/2007CN100999388A Preparation method of polycrystalline silicon film of decorated and coated solution on surface with induction crystallization
07/17/2007US7244520 Substrate for nitride semiconductor growth
07/17/2007US7244402 Microfluidic protein crystallography
07/17/2007US7244306 Method for measuring point defect distribution of silicon single crystal ingot
07/12/2007WO2007078844A2 Crystalline composition, device, and associated method
07/12/2007WO2007076745A1 Method for producing nanostructures on a substrate
07/12/2007WO2007005816A3 Low-temperature catalyzed formation of segmented nanowire of dielectric material
07/12/2007WO2005078168A3 Method of crystallizing silicon, apparatus therefore, thin film transistor and display apparatus
07/12/2007US20070160872 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
07/12/2007US20070160838 Semiconductor nanocrystal and outer layer including oligomeric polydentate ligand bound to nanocrystal by three or more donor groups, each group independently selected from P, N, P .dbd. O, and N .dbd. O, where each monomeric unit includes donor groups, linking groups, and functional groups; luminescence
07/12/2007US20070160501 Device and method for treating a crystal by applying microdrops thereto
07/12/2007US20070158653 Silicon single crystal, a silicon wafer, an apparatus for producing the same, and a method for producing the same
07/12/2007US20070157917 High pressure superabrasive particle synthesis
07/12/2007US20070157876 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
07/12/2007US20070157874 Seed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals
07/12/2007US20070157871 Single crystal semiconductor manufacturing apparatus and method
07/12/2007DE10047346B4 Verfahren zur Herstellung eines Siliciumwafers zur Abscheidung einer Epitaxieschicht und Epitaxiewafer A process for producing a silicon wafer for the deposition of an epitaxial layer and epitaxial wafer
07/11/2007EP1806770A1 Gallium nitride wafer
07/11/2007EP1806755A1 Magnetic garnet single crystal and method for producing the same as well as optical element using the same
07/11/2007EP1806440A2 Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal
07/11/2007EP1806439A1 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL
07/11/2007EP1806438A1 Method of surface reconstruction for silicon carbide substrate
07/11/2007EP1806437A1 Method for preparing silicon carbide single crystal
07/11/2007EP1805354A1 Method for the production of group iii nitride bulk crystals or crystal layers from fused metals
07/11/2007EP0738336B2 Oxide coated cutting tool
07/11/2007CN1997883A Crystal forming devices and systems and methods for making and using the same
07/11/2007CN1997779A Thin film material and method of manufacturing the same
07/11/2007CN1997778A Preparation of nanoparticle materials
07/11/2007CN1996613A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
07/11/2007CN1995494A Anode oxidation method for preparing one-dimensional titanium dioxide array film
07/11/2007CN1995493A Preparation method of low dimensional molybdenum oxide bronze single crystal
07/11/2007CN1995492A Nd-doped potassium yittrium tungstate laser crystal growth method and growth device
07/11/2007CN1995491A Raman crystal and its preparing method and use
07/11/2007CN1995490A Process for preparing lithium titanate crystal whisker
07/11/2007CN1995489A Non-linear optic crystal potassium borate niobate, preparation method and use thereof
07/11/2007CN1995488A Method for preparing ferric oxide monocrystalline nano line
07/11/2007CN1995487A Germanium-doped directional solidification casting polycrystalline silicon
07/11/2007CN1995486A Method for producing silicon single crystal
07/11/2007CN1995485A Dislocation-free silicon monocrystal production method
07/11/2007CN1995482A Nano cobalt monoxide crystal plane controllable growth method
07/11/2007CN1995481A Method for preparing diverse microcosmic appearance zinc oxide film
07/11/2007CN1326297C Ytterbium-doped gadolinium siliate laser crystal and its preparation method
07/11/2007CN1325703C Method for developing crystal of yttrium aluminate with cerium doped