| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 09/13/2007 | US20070210256 Scintillator crystals, method for making same, use thereof |
| 09/13/2007 | US20070209589 Slab cross flow cvd reactor |
| 09/13/2007 | US20070209578 Method for producing substrate for single crystal diamond growth |
| 09/13/2007 | US20070209575 Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal |
| 09/13/2007 | US20070209571 Flux Assisted Solid Phase Epitaxy |
| 09/13/2007 | DE10083498B4 Verfahren zur Herstellung einer dünnen polykristallinen Schicht und eines supraleitenden Oxidelements A process for producing a polycrystalline thin film and a superconducting Oxidelements |
| 09/12/2007 | EP1832673A1 Method for producing substrate for single crystal diamond growth |
| 09/12/2007 | EP1832672A1 Single-crystal diamond |
| 09/12/2007 | EP1831438A1 Method for growing optionally coated beta-sic or alpha-si3n4 nanowires |
| 09/12/2007 | EP1831436A1 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
| 09/12/2007 | EP1556529B1 Method and apparatus for crystal growth |
| 09/12/2007 | EP1115918B1 Enhanced n-type silicon material for epitaxial wafer substrate and method of making same |
| 09/12/2007 | EP0795049B2 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 09/12/2007 | CN101036215A Chemical vapor deposition reactor |
| 09/12/2007 | CN101035933A Nitride semiconductor single crystal including ga, method for manufacturing the same, and substrate and device using the crystal |
| 09/12/2007 | CN101035932A Hexagonal wurtzite type single crystal, process for producing the same, and hexagonal wurtzite type single crystal substrate |
| 09/12/2007 | CN101033558A Infrared window material |
| 09/12/2007 | CN100337310C Low-resistance n type semiconductor diamond and process for producing the same |
| 09/12/2007 | CN100337308C GaN single crystal base, nitride type semiconductor optical growth base, nitride type semiconductor device and its producing method |
| 09/12/2007 | CN100336944C Two-steps method for growing niobium plumbum zincic acid-aluminium titanate of relaxation ferroelectric monocrystal |
| 09/12/2007 | CN100336943C Diamond single crystal composite substrate and method for manufacturing the same |
| 09/12/2007 | CN100336942C Method for growing high crystal quality indium nitride single-crystal epitaxial film |
| 09/11/2007 | US7268549 Magnetic resonance spectrometer |
| 09/11/2007 | US7267810 Method of synthesizing colloidal nanocrystals |
| 09/11/2007 | US7267721 Method for preparing group IV nanocrystals with chemically accessible surfaces |
| 09/07/2007 | WO2007100158A1 METHOD FOR MANUFACTURING Si SINGLE CRYSTAL INGOT BY CZ METHOD |
| 09/07/2007 | WO2007100146A1 PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
| 09/07/2007 | WO2006041660A8 100 mm silicon carbide wafer with low micropipe density |
| 09/06/2007 | US20070205481 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| 09/06/2007 | US20070204788 Lithium tantalate substrate and method of manufacturing same |
| 09/05/2007 | EP1829992A1 Process for producing single crystal and process for producing annealed wafer |
| 09/05/2007 | EP1829950A1 Fluorescent material and method for preparation thereof, radiation detector using fluorescent material, and x-ray ct device |
| 09/05/2007 | EP1828446A1 Process for producing high quality large size silicon carbide crystals |
| 09/05/2007 | EP1828445A1 Process for producing silicon carbide crystals having increased minority carrier lifetimes |
| 09/05/2007 | EP1828444A2 Topotactic anion exchange oxide films and method of producing the same |
| 09/05/2007 | CN101029417A Class-1 piezoelectric monocrystal |
| 09/05/2007 | CN101029416A Polycrystal material for fast high-temperature sensing sensor |
| 09/05/2007 | CN101029415A Production of non-metallic material calcium-sulfate whiskers |
| 09/05/2007 | CN101029078A Gel used for protein crystalling |
| 09/05/2007 | CN100335683C Method for preparing large-size artificial optical quartz crystal by hydrothermal method |
| 09/04/2007 | US7264750 Single crystal ingot doped with Cerium, Europium, Terbium or Ytterbium; crystal face is composed of a plurality of smooth partial region surfaces |
| 09/04/2007 | US7264675 Diamond manufacturing method |
| 09/04/2007 | US7264674 Method for pulling a single crystal |
| 08/30/2007 | WO2007097046A1 Method and apparatus for treating silicon particle |
| 08/30/2007 | WO2007078844A3 Crystalline composition, device, and associated method |
| 08/30/2007 | WO2007062250A3 Large aluminum nitride crystals with reduced defects and methods of making them |
| 08/30/2007 | US20070202333 effected in the presence of a molecular cluster compound where molecules of cluster compound act as seed or nucleation point upon which nanoparticle growth may be initiated; high-temperature nucleation step is not required |
| 08/30/2007 | US20070199505 Optical Medium, An Optical Lens And A Prism |
| 08/29/2007 | EP1825018A1 Device for vacuum deposition with recharging reservoir and corresponding vacuum deposition method |
| 08/29/2007 | EP1158077B1 Method and apparatus for producing single crystal of silicon carbide |
| 08/29/2007 | EP1099770B1 Refining process for high purity gallium for producing compound semiconductor and apparatus for the same |
| 08/29/2007 | CN101027433A Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 08/29/2007 | CN101027321A 孕酮受体结构 Progesterone receptor structure |
| 08/29/2007 | CN101026092A Substrate for growing pendeo epitaxy and method of forming the same |
| 08/29/2007 | CN101024904A Method for synthesizing single crystal beta Si3N4 nano wire using nano silicon-wire as formboard |
| 08/29/2007 | CN101024903A Gallium nitride crystal substrate and method of producing same |
| 08/29/2007 | CN101024902A Zr:Fe:LiNbO3 crystal and its preparing method |
| 08/29/2007 | CN101024901A Zr:LiNbO3 crystal and its preparing method |
| 08/29/2007 | CN101024900A Method for synthesizing laser crystal emerald jewel by cosolvent method |
| 08/29/2007 | CN101024899A Non-linear optical crystal selenium borate |
| 08/29/2007 | CN101024898A Blue-jewel-crystal multi-crucible melt growth technolgoy |
| 08/29/2007 | CN101024897A Oriented growth method of ZnO micron tube |
| 08/29/2007 | CN101024896A Method for synthesizing ZnO micron tube |
| 08/29/2007 | CN101024895A Epitaxial wafer and method for production of epitaxial wafer |
| 08/29/2007 | CN101024894A Device and method for producing a single crystal, single crystal and semiconductor wafer |
| 08/29/2007 | CN101024893A Method for micro-wave plasma low-temperature synthesizing film |
| 08/29/2007 | CN100334265C Process and equipment for continuously producing tetrapod-like zinc oxide whisker |
| 08/29/2007 | CN100334264C Process for preparing calcium sulfate whisker |
| 08/29/2007 | CN100334263C 有机半导体元件 The organic semiconductor element |
| 08/29/2007 | CN100334262C Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 08/29/2007 | CN100334261C Rutile type structure TiO2 single dispersed nano-monocrystal and its synthesis method |
| 08/29/2007 | CN100334260C Method for producing monocrystalline component, having complex moulded structure |
| 08/28/2007 | US7262920 Optical element and manufacturing method therefor |
| 08/28/2007 | US7261778 Method of producing quasi phase-matching crystal and quasi phase-matching crystal |
| 08/28/2007 | US7261776 Deposition of buffer layers on textured metal surfaces |
| 08/23/2007 | WO2007094785A1 BULK SINGLE CRYSTAL DOPED ZINC OXIDE (ZnO) SCINTILLATOR |
| 08/23/2007 | WO2007094607A1 Method for preparing granular polycrystalline silicon using fluidized bed reactor |
| 08/23/2007 | WO2007094155A1 PROCESS FOR PRODUCING SiC SINGLE CRYSTAL |
| 08/23/2007 | WO2007094146A1 Process for producing superconducting thin-film material, superconducting equipment and superconducting thin-film material |
| 08/23/2007 | WO2007094126A1 Method of recovering sodium metal from flux |
| 08/23/2007 | WO2007093082A1 A process of producing silicon wafer employing float method and apparatus thereof |
| 08/23/2007 | WO2007018555A8 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 08/23/2007 | US20070197022 Manufacture Of Cadmium Mercury Telluride |
| 08/23/2007 | US20070196942 Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate using the same |
| 08/23/2007 | US20070193507 Radiation detector |
| 08/23/2007 | US20070193506 Method of producing optical element |
| 08/23/2007 | US20070193505 Apparatus and method for diamond production |
| 08/23/2007 | US20070193499 Zno single crystal as super high speed scintillator... |
| 08/23/2007 | DE60123592T2 Hochtemperatur/hochdruck-farbeveränderung von diamanten High-temperature / high-pressure change color of diamonds |
| 08/23/2007 | DE60123591T2 Hochtemperatur/hochdruck-farbeveränderng von diamanten High-temperature / high-pressure farbeveränderng of diamonds |
| 08/23/2007 | DE19721082B4 Verfahren zur Herstellung von kubischem Bornitrid Process for preparing cubic boron nitride |
| 08/23/2007 | CA2641902A1 Method of manufacturing superconducting thin film material, superconducting device and superconducting thin film material |
| 08/22/2007 | EP1821339A1 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 08/22/2007 | EP1821321A1 Magnetic garnet single crystal and optical element using the same |
| 08/22/2007 | EP1820887A2 Gallium nitride crystal substrate and method of producing same |
| 08/22/2007 | EP1820886A1 Magnetic garnet single crystal, optical device using same and method for producing single crystal |
| 08/22/2007 | EP1820885A2 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| 08/22/2007 | CN2937162Y Turn-over device of large size KDP crystal |
| 08/22/2007 | CN1333445C An oxide layer on a GAAS-based semiconductor structure and method of forming same |
| 08/22/2007 | CN1333439C Method for forming polycrystalline silicon film of polycrystalline silicon tft |