| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/11/2007 | CN1325702C Process for preparing zone-melted vapor doping solar cell silicon single crystal |
| 07/11/2007 | CN1325701C Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal |
| 07/11/2007 | CN1325700C Large-diameter zone-melting silicon single crystal growth method |
| 07/10/2007 | US7242075 Silicon wafers and method of fabricating the same |
| 07/10/2007 | US7241885 Purity; crystallization from solvent |
| 07/10/2007 | US7241479 chemical vapor deposition (CVD); nanowires and nanobelts; heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber |
| 07/10/2007 | CA2403310C Single crystal gan substrate, method of growing same and method of producing same |
| 07/05/2007 | WO2007074552A1 Process for producing soi wafer and soi wafer |
| 07/05/2007 | WO2007073639A1 Preparation method for highly orientated transparent thin film of double-layered-hydroxides |
| 07/05/2007 | US20070155004 Treatment of crystals in order to avoid light-induced modifications of the refractive index |
| 07/05/2007 | US20070152233 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate |
| 07/05/2007 | US20070152182 Relaxor ferroelectric solid-solution single crystal, device, and method of using device |
| 07/05/2007 | DE10392847B4 Preparation of thin silicon sheets used in solar batteries comprises impregnating the surface layer of an under sheet in a molten solution containing metal material or semiconductor material in the main chamber of a crucible |
| 07/04/2007 | EP1804283A1 Annealed wafer and manufacturing method of annealed wafer |
| 07/04/2007 | EP1803840A2 Method for growing single crystal of silicon carbide |
| 07/04/2007 | EP1803839A1 Fabrication method and fabrication apparatus of group III nitride crystal substance |
| 07/04/2007 | EP1802553A2 Method for increasing the conversion of group iii metals to group iii nitrides in a fused metal containing group iii elements |
| 07/04/2007 | CN1993504A Apparatus for growing monocrystals from melt |
| 07/04/2007 | CN1993503A Method for growing monocrystals from melt |
| 07/04/2007 | CN1993494A Method for production of reactors for the decomposition of gases |
| 07/04/2007 | CN1993292A Metal nitride and method for producing metal nitride |
| 07/04/2007 | CN1324660C Rectangular nitride semiconductor substrate capable of identifying outside and inside |
| 07/04/2007 | CN1324170C Process for preparing whisker calcium sulfate |
| 07/04/2007 | CN1324169C Method of manufacturing buried insulating layer type single crystal silicon carbide substrate and equipment |
| 07/04/2007 | CN1324168C Method for preparing sic crystal and SiC crystal |
| 07/04/2007 | CN1324167C Lithium tantanate substrate and its prepn. process |
| 07/04/2007 | CN1324166C Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
| 07/04/2007 | CN1323964C Method for reforming quartz glass crucible |
| 07/04/2007 | CN1323963C Spinel substrate and heteroepitaxial growth of III-V materials thereon |
| 07/03/2007 | US7238970 Semiconductor device and method for fabricating the same |
| 07/03/2007 | US7238658 Treating agonist disorders including obesity, and hyperglycemic, whole body growth, immunological, kidney, neurological and neuromuscular disorders by administering a crystal of an insulin-like growth factor-1 that diffracts x-ray radiation to produce a three-dimensional diffraction pattern |
| 07/03/2007 | US7238595 Epitaxial semiconductor deposition methods and structures |
| 06/28/2007 | WO2007072984A1 Semiconductor substrate manufacturing method and element structure manufacturing method |
| 06/28/2007 | WO2007072072A2 Crystallisation apparatus and process with supercritical fluid |
| 06/28/2007 | WO2007071771A1 Method for making a composite substrate and composite substrate according to said method |
| 06/28/2007 | WO2007071130A1 Vertically-orientated hydrotalcite-like film having composite micro-structure and its preparation method |
| 06/28/2007 | US20070148374 Method of incorporating a mark in cvd diamond |
| 06/28/2007 | US20070148079 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 06/28/2007 | US20070145376 Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate |
| 06/27/2007 | EP1801269A1 Process for producing a free-standing III-N layer, and free-standing III-N substrate |
| 06/27/2007 | EP1801268A1 Magnetic field application method of pulling silicon single crystal |
| 06/27/2007 | EP1801120A1 Co-crystalline complex of IGF-1 and methods of identifying indirect agonists of IGF-1 using the same |
| 06/27/2007 | EP1799886A1 Indium nitride layer production |
| 06/27/2007 | EP1799885A2 Core-alloyed shell semiconductor nanocrystals |
| 06/27/2007 | EP1543181B1 Single crystal diamond |
| 06/27/2007 | EP1451394A4 Aluminum oxide material for optical data storage |
| 06/27/2007 | EP1446517B1 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| 06/27/2007 | CN1989277A Method for producing re-ba-cu-o oxide superconductor |
| 06/27/2007 | CN1988113A Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
| 06/27/2007 | CN1986911A Process of preparing nano sulfide semiconductor line |
| 06/27/2007 | CN1986910A Process of preparing nano lead sulfide semiconductor particle |
| 06/27/2007 | CN1986909A Normal pressure zinc vapor oxidizing process for preparing four-needle zinc oxide whisker |
| 06/27/2007 | CN1986908A Process of preparing oil soluble nano titania rod |
| 06/27/2007 | CN1986907A Process of preparing oil soluble nano titania line |
| 06/27/2007 | CN1986906A Chemical process for preparing one-dimensional nano lanthanum fluoride material |
| 06/27/2007 | CN1323196C Method for producing silicon single crystal and, silicon single crystal and silicon wafer |
| 06/27/2007 | CN1323195C Cold core shouldering micropulling proparation method of large size sapphire single crystal |
| 06/27/2007 | CN1323194C Technique for fabricating monocystal of rutile through flame fusion method under controllable atmosphere and equipment |
| 06/26/2007 | US7235131 Method for forming a single crystalline film |
| 06/26/2007 | US7235130 Apparatus and method for diamond production |
| 06/26/2007 | US7235128 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor |
| 06/26/2007 | CA2249276C Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
| 06/21/2007 | WO2007069523A1 PROCESS FOR PRODUCING InGaN |
| 06/21/2007 | WO2007069388A1 AlxGayIn1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME |
| 06/21/2007 | WO2007068756A1 Process for growth of low dislocation density gan |
| 06/21/2007 | WO2007038710A3 Intra-cavity gettering of nitrogen in sic crystal growth |
| 06/21/2007 | WO2007030673A3 Vapor deposition of hafnium silicate materials with tris(dimethylamido)silane |
| 06/21/2007 | US20070142233 Enhanced melt-textured growth |
| 06/21/2007 | US20070140936 Corundum crystal formed body |
| 06/21/2007 | DE102004003596B4 Verfahren zur Herstellung von ZnO-Einkristallen A process for producing ZnO single crystals |
| 06/21/2007 | CA2633118A1 Alxgayin1-x-yn crystal substrate, semiconductor device, and method of manufacturing the same |
| 06/21/2007 | CA2572397A1 Polycrystalline ultra-hard material with microstructure substantially free of catalyst material eruptions |
| 06/20/2007 | EP1798315A2 Method to obtain high purity crystals from crystalline waste |
| 06/20/2007 | EP1797224A1 Synthesis of highly luminescent colloidal particles |
| 06/20/2007 | CN1985368A Support for hybrid epitaxy and method of fabrication |
| 06/20/2007 | CN1985362A Silicon carbide single crystal and method of etching the same |
| 06/20/2007 | CN1984839A Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 06/20/2007 | CN1983571A Polycrystalline silicon layer, flat panel display using the polyscrystalline silicon layer and method for fabricating the same |
| 06/20/2007 | CN1983570A Polycrystalline silicon layer, method for fabricating the same and flat panel display |
| 06/20/2007 | CN1982511A Boron-aluminate laser crystal, its production and use |
| 06/20/2007 | CN1982510A Nickel cobalt potassium sulfate hexahydrate crystal for ultra-violet light band filter |
| 06/20/2007 | CN1982509A Nickel cobalamine sulfate hexahydrate of ultra-violet filter crystal material |
| 06/20/2007 | CN1322179C Both chromium and ytterbium doped gadolinium-gallium gallium garnet self Q switching crystal and its growing method |
| 06/20/2007 | CN1322178C Coloured diamond |
| 06/20/2007 | CN1322177C Method for developping directionally aligning carbon nanometer tube array on silicon substrate |
| 06/20/2007 | CN1322175C Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
| 06/20/2007 | CN1322174C Technique for developing crystal of bismuth boric acid through falling curcible method |
| 06/20/2007 | CN1322173C Process for preparing high temperature cerium blended lutetium pyrosilicate scintillation monocrystal |
| 06/19/2007 | US7233006 Scintillator crystals, method for making same, use thereof |
| 06/19/2007 | US7232555 Alleviated cracking and improved utilization rate and cost effectiveness; preferably both of the principal faces of the wafer are mirror-polished and the peripheral edge is ground. |
| 06/19/2007 | US7232488 Method of fabrication of a substrate for an epitaxial growth |
| 06/19/2007 | US7232487 Method for making an epitaxial germanium temperature sensor |
| 06/19/2007 | US7232484 Method and apparatus for doping semiconductors |
| 06/14/2007 | US20070131158 Method for manufacturing single crystal semiconductor |
| 06/14/2007 | DE102005059531A1 Preparation of highly pure, preferably radiation-stable large volume single crystals, useful in e.g. lenses, comprises producing a melt obtained from crystal raw material and controlled cooling under solidification |
| 06/14/2007 | DE102004017142B4 Lithiumtantalat-Substrat und Verfahren zu seiner Herstellung Lithium tantalate substrate and process for its preparation |
| 06/13/2007 | EP1214190A4 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/13/2007 | CN1979887A Self-standing gan single crystal substrate, method of making same, and method of making a nitride semiconductor device |
| 06/13/2007 | CN1979766A Nitride-based semiconductor substrate and semiconductor device |
| 06/13/2007 | CN1978716A Two-dimensional photonic crystal with large absolute band gap |