| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/03/2007 | EP1739213A1 Apparatus and method for annealing of III-V wafers and annealed III-V semiconductor single crystal wafers |
| 01/03/2007 | EP1739211A1 METHOD FOR PRODUCING SILICON CARBIDE (SiC) SINGLE CRYSTAL AND SILICON CARBIDE (SiC) SINGLE CRYSTAL OBTAINED BY SUCH METHOD |
| 01/03/2007 | EP1739210A1 Method for production of doped semiconductor single crystal, and III-V semiconductor single crystal |
| 01/03/2007 | EP1738199A1 Scintillator material based on rare earth with a reduced nuclear background |
| 01/03/2007 | EP1738001A2 In situ doped epitaxial films |
| 01/03/2007 | EP1516078B1 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
| 01/03/2007 | EP1313897B1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
| 01/03/2007 | EP1257684B1 Method and apparatus for chemical vapor deposition of polysilicon |
| 01/03/2007 | EP1230005B1 Crystalline gallium nitride and method for forming crystalline gallium nitride |
| 01/03/2007 | EP0992618B1 Method of manufacturing compound semiconductor single crystal |
| 01/03/2007 | CN1890817A Method for treating powder particles |
| 01/03/2007 | CN1890408A Artificial corundum crystal |
| 01/03/2007 | CN1888148A Production process of fine granularity cubic boron nitride monocrystal |
| 01/03/2007 | CN1888147A Second-order non-linear optical crystal material and its synthesis process and use |
| 01/02/2007 | US7157354 Method for gettering transition metal impurities in silicon crystal |
| 01/02/2007 | US7157287 Method of substrate surface treatment for RRAM thin film deposition |
| 01/02/2007 | US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness |
| 12/28/2006 | WO2006137500A1 Process for producing silicon carbide single crystal |
| 12/28/2006 | WO2006137401A1 Diamond semiconductor element and method for manufacturing same |
| 12/28/2006 | WO2006137192A1 Method of surface reconstruction for silicon carbide substrate |
| 12/28/2006 | WO2006137181A1 Apparatus for producing semiconductor single crystal |
| 12/28/2006 | WO2006137180A1 Apparatus for producing semiconductor single crystal |
| 12/28/2006 | WO2006137179A1 Method of growing silicon single crystal |
| 12/28/2006 | WO2006137178A1 Method of growing silicon single crystal and process for producing silicon wafer |
| 12/28/2006 | WO2006137174A1 Method of growing silicon single crystal and silicon single crystal grown by the method |
| 12/28/2006 | WO2006136929A2 High colour diamond layer |
| 12/28/2006 | WO2006085798A3 Method for manufacturing of article comprising silicon substrate with silicon carbide film on its surface |
| 12/28/2006 | US20060293507 Crystallization of IGF-1 |
| 12/28/2006 | US20060292890 Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions |
| 12/28/2006 | US20060292870 chemical-mechanical polishing mixture of a cationic abrasive, a cationic acrylamide-diallyldimethylammonium chloride copolymer and water; pH of 6 or less; selectivity for removal of silicon nitride over removal of silicon oxide |
| 12/28/2006 | US20060292835 Element fabrication substrate |
| 12/28/2006 | US20060292057 Method of production of silicon carbide single crystal |
| 12/28/2006 | US20060289860 Semiconductor layer |
| 12/28/2006 | US20060288925 Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element |
| 12/28/2006 | DE112005000300T5 Vorrichtung und Verfahren zum Herstellen von Einkristall-Halbleitern Apparatus and method for manufacturing single-crystal semiconductors |
| 12/28/2006 | DE102005028202A1 Production of silicon semiconductor wafers for fabrication of electronic components comprises controlling ratio of pulling rate to axial temperature gradient to produce agglomerated vacancy defects above critical size in single crystal |
| 12/28/2006 | CA2607202A1 High colour diamond layer |
| 12/27/2006 | EP1736760A2 Nanosensors |
| 12/27/2006 | EP1736574A1 Nitride crystal, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 12/27/2006 | EP1736573A1 Method for producing iii group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby |
| 12/27/2006 | EP1736572A1 Group iii nitride crystal substrate, method for producing same, and group iii nitride semiconductor device |
| 12/27/2006 | EP1736571A1 Method of manufacturing thin crystal films |
| 12/27/2006 | EP1736570A1 Method of solid-phase flux epitaxy growth |
| 12/27/2006 | EP1735820A2 Fabrication and use of superlattice |
| 12/27/2006 | EP1735403A2 Method and structure for non-linear optics |
| 12/27/2006 | EP1595280B1 Buffer structure for heteroepitaxy on a silicon substrate |
| 12/27/2006 | EP1444388B1 Mcraly-coating |
| 12/27/2006 | EP1442163B1 Method of growing a mcraly-coating and an article coated with the mcraly-coating |
| 12/27/2006 | EP1358209B1 Crystallization of igf-1 |
| 12/27/2006 | CN1886533A Method for manufacturing diamond coatings |
| 12/27/2006 | CN1885582A Thermoelectric material of isotope battery and its preparation method |
| 12/27/2006 | CN1885494A InGaN epitaxy film and growth method and application in solar cell |
| 12/27/2006 | CN1884639A Heat treatment method after silicon carbide monocrystal growth |
| 12/27/2006 | CN1884637A Tunable violet laser crystal Cr3+: REA3(BO3)4 |
| 12/27/2006 | CN1884636A Beta'-Sialon whisker gas phase reaction preparation method |
| 12/27/2006 | CN1884635A Method for growing high-performance tube type sapphire back cover |
| 12/27/2006 | CN1884634A Method for growing high-performance tube type sapphire |
| 12/27/2006 | CN1884633A Method for magnesium hydroxide whisker using giobertite as material |
| 12/27/2006 | CN1884192A Process for preparing mullite crystal whisker by molten salt method |
| 12/27/2006 | CN1292107C Growth method of neodymium-doped gadolinium gallium garnet laser crystal |
| 12/27/2006 | CN1292106C Growing method of yttrium aluminate crystal |
| 12/27/2006 | CN1292105C Sodium and ytterbium doped calcium fluoride laser crystal and growth method thereof |
| 12/27/2006 | CN1292103C Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering |
| 12/27/2006 | CN1292102C Upper thermal device used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
| 12/27/2006 | CN1292101C Preparation method of large diameter zone melting silicon single crystal |
| 12/26/2006 | US7154131 Nitride semiconductor substrate and method of producing same |
| 12/26/2006 | US7153551 A carrier transporting film enhanced by a uniform molecular alignment by the phase transition from the smectic liquid crystal phase to the solid crystal, the liquid crystal being a laterally symmetrical mesogen unit including an aromatic ring; charge transport/generating compounds; high seed/density |
| 12/26/2006 | US7153485 Method for preparing single crystalline zinc sulfide powder for phosphor |
| 12/26/2006 | US7153360 Template and methods for forming photonic crystals |
| 12/21/2006 | WO2006135688A2 Polar surface preparation of nitride substrates |
| 12/21/2006 | WO2006135476A1 Low basal plane dislocation bulk grown sic wafers |
| 12/21/2006 | WO2006134599A1 Iii-v semiconductor core-heteroshell nanocrystals |
| 12/21/2006 | WO2006134568A1 Grown photonic crystals in semiconductor light emitting devices |
| 12/21/2006 | WO2006078733A3 Estrogen receptor structure |
| 12/21/2006 | WO2005086962A3 System and method for fabricating a crystalline thin structure |
| 12/21/2006 | WO2004076056A3 Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles |
| 12/21/2006 | US20060287510 Crystallization of IGF-1 |
| 12/21/2006 | US20060287235 Crystallization of IGF-1 |
| 12/21/2006 | US20060286695 Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type iii-v group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer |
| 12/21/2006 | US20060286380 Components with bearing or wear-resistant surfaces |
| 12/21/2006 | US20060283389 System for growing silicon carbide crystals |
| 12/21/2006 | US20060283375 Lithium tantalate substrate and method of manufacturing same |
| 12/21/2006 | US20060283372 Lithium tantalate substrate and method of manufacturing same |
| 12/20/2006 | EP1734158A1 Gallium nitride single crystal growing method and gallium nitride single crystal |
| 12/20/2006 | EP1734157A1 Production process of silicon single crystal |
| 12/20/2006 | EP1733264A2 Self assembled three-dimensional photonic crystal |
| 12/20/2006 | EP1733078A1 Single crystals and methods for fabricating same |
| 12/20/2006 | CN1883032A Process for producing silicon epitaxial wafer |
| 12/20/2006 | CN1882720A Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer |
| 12/20/2006 | CN1881547A Silicon wafer for igbt and method for producing same |
| 12/20/2006 | CN1880522A Polarization method for lithium niobate |
| 12/20/2006 | CN1880520A Process for preparing silicon dioxide colloid crystal with variable lattice constant |
| 12/20/2006 | CN1880519A Process for preparing patterning titanium dioxide inverse opal photonic crystal |
| 12/20/2006 | CN1291073C Growth of colorless silicon carbide crystals |
| 12/20/2006 | CN1291072C Method for monocrystal growth and growth apparatus |
| 12/19/2006 | US7150788 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 12/14/2006 | WO2006132536A1 Method and apparatus for refining a molten material |
| 12/14/2006 | WO2006132082A1 Process for producing silicon carbide single crystal |
| 12/14/2006 | WO2006132049A1 Single-crystalline organic carboxylic acid metal complex, process for producing the same, and use thereof |
| 12/14/2006 | WO2006131370A1 Protein crystal |