Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
02/2007
02/20/2007US7178366 Method for the production of an internally vitrified SiO2 crucible
02/15/2007WO2007018216A1 ZnO CRYSTAL, METHOD FOR GROWING THE CRYSTAL, AND METHOD FOR MANUFACTURE OF LIGHT-EMITTING ELEMENT
02/15/2007WO2007017951A1 Single crystal material and process for producing the same
02/15/2007WO2006097804B1 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
02/15/2007US20070036921 Diamond
02/15/2007US20070034251 Semiconductor elements having zones of reduced oxygen
02/15/2007US20070034146 Silicon manufacturing apparatus
02/15/2007US20070034145 Single crystal of silicon carbide, and method and apparatus for producing the same
02/15/2007US20070034139 Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystal
02/15/2007US20070033810 Diamond tool, synthetic single crystal diamond and method of synthesizing single crystal diamond, and diamond jewlry
02/15/2007DE102005037393A1 Growth of large volume crystals from melt calcium fluoride crystal material, comprises heating a material in crucible by heating elements, and forming single crystal at the crucible base by reducing crystallization
02/15/2007CA2589299A1 Ultratough cvd single crystal diamond and three dimensional growth thereof
02/14/2007EP1753018A2 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device
02/14/2007EP1752567A1 Process for producing wafer of silicon carbide single-crystal
02/14/2007EP1752566A1 Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film
02/14/2007EP1752565A1 Apparatus for measuring semiconductor physical characteristics
02/14/2007EP1752564A1 Device and method for counter-diffusion crystal growth
02/14/2007EP1751788A1 Flexible single-crystal film and method of manufacturing the same
02/14/2007EP1751329A1 Method of growing sic single crystal and sic single crystal grown by same
02/14/2007EP1751055A1 Nanostructures and method for making such nanostructures
02/14/2007EP1372805A4 Efg crystal growth apparatus and method
02/14/2007CN1914126A Method of incorporating a mark in CVD diamond
02/14/2007CN1913107A Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby
02/14/2007CN1912195A Growth method of doped-vanadium yttrium-iron-garnet crystal
02/14/2007CN1912194A Method for preparing high-quality ZnO single-crystal film on si (111) substrate
02/14/2007CN1911782A Preparation method of palladium nanometer wire oldered array material
02/14/2007CN1301050C Energy Pathway Arrangement
02/14/2007CN1300901C Light emitting element structure using nitride bulk single crystal layer
02/14/2007CN1300826C Method for improving hydride gas phase epitaxial growth gallium nitride crystal film surface quanlity
02/14/2007CN1300388C Method of forming gallium-contg. nitride bulk single crystal on heterogeneneous substrate
02/14/2007CN1300387C Process for non-mask transverse epitaxial growth of high quality gallium nitride
02/14/2007CN1300386C Process for preparing antimonic oxychloride crystal
02/13/2007US7177514 Optical waveguide material and optical waveguide
02/13/2007US7176497 Group III nitride compound semiconductor
02/13/2007US7176115 Method of manufacturing Group III nitride substrate and semiconductor device
02/13/2007US7175735 Method and apparatus for manufacturing coated conductor
02/13/2007US7175706 Process of producing multicrystalline silicon substrate and solar cell
02/13/2007US7174620 Method of manufacturing thin quartz crystal wafer
02/13/2007CA2436391C Method for manufacturing highly-crystallized oxide powder
02/08/2007WO2007015572A1 Aluminum nitride single crystal film, aluminum nitride single crystal laminated substrate and processes for production of both
02/08/2007WO2007015404A1 PROCESS FOR PRODUCING AlN SEMICONDUCTOR AND APPARATUS FOR PRODUCING AlN SEMICONDUCTOR
02/08/2007WO2007014485A1 A method of directly-growing three-dimensional nano- net-structures
02/08/2007WO2006096201A9 Method for preparing group iv nanocrystals with chemically accessible surfaces
02/08/2007WO2006027778A3 Core-alloyed shell semiconductor nanocrystals
02/08/2007DE112005000350T5 Verfahren zum Herstellen eines Einkristall-Halbleiters A method for producing a single crystal semiconductor
02/07/2007EP1750311A2 Gallium nitride device substrate comprising a gallium nitride based buffer layer and method of manufacturing the same
02/07/2007EP1749905A1 Method for manufacturing boride single crystal and substrate
02/07/2007EP1749123A2 System for continuous growing of monocrystalline silicon
02/07/2007CN1910310A DAST twin crystal, process for producing the same and use thereof
02/07/2007CN1909190A Gallium nitride device substrate containing a lattice parameter altering element
02/07/2007CN1908253A Preparation method of penta-member plane square chalcogenide metal cluster compound functional molecular crystal
02/07/2007CN1908252A Analogy method of GaAs-based InSb thin film heterogeneity epitaxial growth
02/07/2007CN1908251A Method of growing single crystal gan, method of making single crystal gan substrate and single crystal gan substrate
02/07/2007CN1908250A Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line
02/07/2007CN1908249A A silicon single crystal ingot and wafer, growing apparatus and method thereof
02/07/2007CN1299406C High repetition rate excimer laser system
02/07/2007CN1298896C Er3+, Yb3+, Ce3+ codoped CaF2 laser crystal and its growth method
02/07/2007CN1298895C Up-conversion laser crystal Er3+, Yb3+, Na+:CaF2
02/07/2007CN1298894C Method for improving growth efficiency and quality of ZnO crystal grown by hydrothermal method
02/06/2007US7173285 Lithographic methods to reduce stacking fault nucleation sites
02/06/2007US7172957 Method of fabricating n-type semiconductor diamond, and semiconductor diamond
02/06/2007US7172813 includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate (crystalline, polycrystalline, and amorphous ) surface by a chemical deposition process
02/06/2007US7172655 Providing single crystal chemical vapour deposition (CVD) diamond which is coloured and heat treating the diamond under conditions suitable to produce the desired colour
02/06/2007US7172654 Preparation of compounds based on phase equilibria of Cu-In-Se
02/06/2007CA2397219C Method for fabricating group iii nitride compound semiconductors and group iii nitride compound semiconductor devices
02/01/2007WO2007014032A1 s SEPARATION OF GROWN DIAMOND FROM DIAMOND SEEDS MOSAIC
02/01/2007WO2007013286A1 AlN CRYSTAL AND METHOD FOR GROWING THE SAME, AND AlN CRYSTAL SUBSTRATE
02/01/2007WO2007013189A1 Silicon wafer and process for producing the same
02/01/2007WO2007013148A1 Silicon single crystal pulling apparatus and method thereof
02/01/2007US20070026644 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
02/01/2007US20070026643 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
02/01/2007US20070023739 DAST twin crystal, process for producing the same, and use thereof
01/2007
01/31/2007EP1748032A1 Inorganic mesoporous substance having chiral twisted structure and process for producing the same
01/31/2007EP1747577A2 Systems and methods for nanowire growth and harvesting
01/31/2007EP1465242B1 Semiconductor wafer and method for producing the same
01/31/2007EP1463849B1 Boron doped diamond and method for its production
01/31/2007CN1904149A Method of preparing silicon oxide nano-filament using fast heating decomposition of organic siloxane
01/31/2007CN1904148A Beryllium fluoroborate non linear optical crystal and its growing method and use
01/31/2007CN1904147A Method and apparatus for growing high quality silicon single crystal, silicon single crystal and silicon wafer
01/31/2007CN1903711A Method of preparing carbon nano tube by Ni/RE/Cu catalyst chemical gaseous phase sedimentation
01/31/2007CN1903710A Method of treating carbon nano tube using electric arc discharging
01/31/2007CN1903427A Method for preparing metal ruthenium nano-wire
01/31/2007CN1298023C Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
01/31/2007CN1297686C A method and system for producing thin films
01/25/2007WO2007010890A1 HEAT TREATMENT METHOD FOR ZnTe SINGLE CRYSTAL SUBSTRATE AND ZnTe SINGLE CRYSTAL SUBSTRATE
01/25/2007WO2007010645A1 Gallium nitride wafer
01/25/2007WO2006061707A3 A method of improving the crystalline perfection of diamond crystals
01/25/2007WO2005116304A3 In situ doped epitaxial films
01/25/2007US20070020773 Fabrication Of Nano-object Array
01/25/2007US20070020748 Apparatus for screening proptein crystallization conditions
01/25/2007US20070020403 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method
01/25/2007US20070018284 Gallium nitride semiconductor substrate and process for producing the same
01/25/2007US20070017433 Process for producing single crystal and single crystal
01/24/2007EP1746186A1 Silicon single crystal manufacturing method and silicon single crystal
01/24/2007EP1745503A2 Methods to fabricate mosfet devices using selective deposition processes
01/24/2007EP1745502A1 Method for growth of group iii-v semiconductor material on a dielectric
01/24/2007EP1476900B1 Method for forming an oxide layer on a gaas-based semiconductor structure
01/24/2007EP1417358B1 Method for producing a monocrystalline component, having a complex moulded structure
01/24/2007CN1902341A Scintillation substances (variants)
01/24/2007CN1902129A Silicon feedstock for solar cells