C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2006
12/14/2006	US20060282229 Quality Evaluation Method for Single Crystal Ingot
12/14/2006	US20060281905 Crystallization of IGF-1
12/14/2006	US20060281322 Epitaxial semiconductor deposition methods and structures
12/14/2006	US20060281283 Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing method
12/14/2006	US20060280945 Method of synthesising a crystalline material and material thus obtained
12/14/2006	US20060278865 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
12/13/2006	EP1731632A2 Nitride semiconductor substrate and method of producing same
12/13/2006	EP1730489A2 Crystal forming devices and systems and methods for making and using the same
12/13/2006	EP1730072A2 Methods of forming alpha and beta tantalum films with controlled and new microstructures
12/13/2006	CN1879198A Method for manufacturing compound semiconductor epitaxial substrate
12/13/2006	CN1878892A Method for preparing garnet single crystal and garnet single crystal prepared thereby
12/13/2006	CN1877877A Nitride semiconductor substrate and method of producing same
12/13/2006	CN1877792A Epitaxial layer structure of gallium nitrides compound semiconductor and method for preparing same
12/13/2006	CN1289723C Melt upper part thermal insulating device for manufacturing six inch and eight inch phosphorus heavily-doped Czochralski silicon monocrystal
12/13/2006	CN1289722C Doping method and doping cone for manufacturing Czochralski silicon monocrystal
12/13/2006	CN1289707C Titanium dioxide cobalt magnetic film and its manufacturing method
12/12/2006	US7148129 Method of growing selective area by metal organic chemical vapor deposition
12/12/2006	US7147718 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
12/12/2006	US7147714 Manufacturing method of silicon carbide single crystals
12/12/2006	US7147711 Method of producing silicon wafer and silicon wafer
12/12/2006	US7147710 Method of manufacturing epitaxial silicon wafer
12/07/2006	WO2006129733A1 Composite comprising array of acicular crystal, process for producing the same, photoelectric conversion element, luminescent element, and capacitor
12/07/2006	WO2006129650A1 Complex containing array of acicular crystal, method for producing the same, photoelectric conversion element, light emitting element and capacitor
12/07/2006	WO2006094980A3 Photovoltaic cell containing a semiconductor photovoltaically active material
12/07/2006	US20060276630 Method for detecting protein crystal, apparatus for detecting protein crystal and program for detecting protein crystal
12/07/2006	US20060276397 Crystallization of IGF-1
12/07/2006	US20060273343 A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same
12/07/2006	US20060272570 Method for producing a single crystal
12/06/2006	CN1875465A Gallium nitride semiconductor substrate and process for producing the same
12/06/2006	CN1875461A Methods of selective deposition of heavily doped epitaxial sige
12/06/2006	CN1873063A Method for preparing material of ZrW1.7Mo0.308 single crystal in minus heat expansion
12/06/2006	CN1873062A Method for preparing polysilicon in high purity in use for solar cell
12/06/2006	CN1873061A Method for producing grain sizes even distributed antimony trioxide in single crystal type, and equipment
12/06/2006	CN1872670A Method for developing crystal of aluminium phosphate through cosolvent
12/06/2006	CN1288282C Process for preparing alpha-Si3N4 whisker
12/06/2006	CN1288281C Method for preparing high length-diameter ratio magnesia whisker
12/06/2006	CN1288102C Partial-zone glass SiO2 forming article, producing method and use thereof
12/05/2006	US7144809 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas
12/05/2006	US7144458 Flow synthesis of quantum dot nanocrystals
11/2006
11/30/2006	WO2006126365A1 Method for cleaning polycrystalline silicon
11/30/2006	WO2006126330A1 METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT
11/30/2006	WO2006125826A1 Electrically conducting nanowires
11/30/2006	WO2006071924A3 Hydrodynamic cavitation crystallization device and process
11/30/2006	WO2005098084A3 Systems and methods for synthesis of extended length nanostructures
11/30/2006	US20060270839 Crystallization of IGF-1
11/30/2006	US20060270200 III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof
11/30/2006	US20060269740 Methods to continuous, monoatomic thick structures
11/30/2006	DE102005024073A1 Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur Semiconductor layer structure and process for producing a semiconductor layer structure
11/29/2006	EP1727177A1 Process for producing layered member and layered member
11/29/2006	EP1726050A1 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
11/29/2006	EP1726036A1 Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites
11/29/2006	EP1185727A4 Sequential hydride vapor-phase epitaxy
11/29/2006	CN1871698A Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer
11/29/2006	CN1870223A Crystal growing method for single-crystal gan, and single-crystal gan substrate and manufacturing method thereof
11/29/2006	CN1870217A Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer
11/29/2006	CN1287013C Crystal seed for making monocrystalline silicon and method for making monocrystalline silicon
11/29/2006	CN1287012C Large scale in situ preparation method of ternary NaV6O15 single crystal nanometer needle
11/29/2006	CN1286748C Method for the production of an internally vitrified sio2 crucible
11/29/2006	CN1286716C Method for growing carbon nano tube
11/28/2006	US7141117 Method of fixing seed crystal and method of manufacturing single crystal using the same
11/28/2006	US7141113 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer
11/28/2006	US7140725 Methods for applying crystalline materials
11/23/2006	WO2006125069A2 A high resistivity silicon structure and a process for the preparation thereof
11/23/2006	WO2006124152A2 Method for using a static electric field to induce crystallization and to control crystal form
11/23/2006	WO2006124103A1 Method and apparatus for the production of silicon carbide crystals
11/23/2006	WO2006124067A1 Controlled polarity group iii-nitride films and methods of preparing such films
11/23/2006	WO2006123740A1 Lithium tantalate single crystal and optical image pickup device
11/23/2006	WO2006123540A1 Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing substrate, and semiconductor element
11/23/2006	WO2006123403A1 Granular crystal production apparatus
11/23/2006	US20060260535 Single crystal calcium fluoride for photolithography
11/22/2006	EP1724378A2 Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal
11/22/2006	EP1723455A1 Process for producing photonic crystals and controlled defects therein
11/22/2006	EP1723086A1 Method of incoporating a mark in cvd diamond
11/22/2006	CN1868066A Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
11/22/2006	CN1867706A Methods and apparatus for rapid crystallization of biomolecules
11/22/2006	CN1867705A Piezoelectric single crystal, piezoelectric single crystal element and method for producing the same
11/22/2006	CN1865540A Poly-diallyldimethyl ammonium chloride single-chain single crystal and method for preparing same
11/22/2006	CN1865539A Three-D inorganic and organic hybrid lamellar long-range ordered magnetic single crystal and process for preparing same
11/22/2006	CN1865538A Yb and Er -codoped gadolinium silicate laser crystal and preparation method therefor
11/22/2006	CN1865537A Process for preparing barium tungstate single crystal with improved doping concentration of rare earth ion
11/22/2006	CN1865536A Process for preparing alkali metal titanium-base crystal whisker and lamellar crystal
11/22/2006	CN1865535A Process for preparing nano barium titanate and doped solid solution by low temperature solid state reaction
11/22/2006	CN1865534A Single-crystal diamond and its preparation method
11/22/2006	CN1865530A Process for preparing zone-melted vapor doping solar cell silicon single crystal
11/22/2006	CN1865529A Process for preparing vapor pre-doping and neutron irradiation doping combined zone-melted silicon single crystal
11/22/2006	CN1865528A Large-diameter zone-melting silicon single crystal growth method
11/22/2006	CN1865527A Precise vertical temperature-difference gradient condensation single crystal growth device and method thereof
11/22/2006	CN1865526A Hydrothermal method growth process for self-assembling ZnO array
11/22/2006	CN1865525A Method for preparing large-size artificial optical quartz crystal by hydrothermal method
11/22/2006	CN1865154A Method for preparing cubic phase babrium titanate using microwave method
11/22/2006	CN1864841A A coesite preparation method
11/22/2006	CN1285773C Method for growing chromium, yttrium and aluminium doped garnet crystal
11/22/2006	CN1285538C Mg, Ti doped Al2O3 crystalline material and transparent laser ceramic preparation method
11/21/2006	US7138098 Heating a mixture of coordinating solvent, amine or reducing agent, chalcogen or pnictide source, and metal-containing compound free of metal-carbon bonds to crystallize; monodispersity; semiconductors; photoluminesce, high emission quantum efficiencies
11/21/2006	US7137865 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
11/16/2006	WO2006121785A1 Synthesis of a starting material with improved outgassing for the growth of fluoride crystals
11/16/2006	WO2006121152A1 Process for producing group iii element nitride crystal, apparatus for producing group iii element nitride crystal, and group iii element nitride crystal
11/16/2006	WO2006120401A1 A bulk, free-standing cubic iii-n substrate and a method for forming same
11/16/2006	WO2006119927A1 Method for producing iii-n layers, and iii-n layers or iii-n substrates, and devices based thereon
11/16/2006	US20060257564 Systems and methods for producing single-walled carbon nanotubes (SWNTs) on a substrate

1 ... 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 ... 272