| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/22/2007 | US7220984 Influence of surface geometry on metal properties |
| 05/22/2007 | US7220706 Enhanced melt-textured growth |
| 05/22/2007 | US7220309 Receptor linked protein tyrosine phosphatases |
| 05/22/2007 | US7220308 Manufacturing method of high resistivity silicon single crystal |
| 05/22/2007 | CA2294715C Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma |
| 05/18/2007 | WO2007055377A1 METHOD FOR FORMING CRYSTALLINE SiC BY CARBONIZATION OF Si SUBSTRATE SURFACE, AND CRYSTALLINE SiC SUBSTRATE |
| 05/18/2007 | WO2007038219A3 Synthesis of columnar hydrogel colloidal crystals in water-organic solvent mixture |
| 05/18/2007 | WO2007004014A3 Semiconducting nanoparticles with surface modification |
| 05/18/2007 | WO2005111173A3 Method and structure for non-linear optics |
| 05/18/2007 | WO2005084225A3 System for continuous growing of monocrystalline silicon |
| 05/17/2007 | US20070111498 Method of fabricating n-type semiconductor diamond, and semiconductor diamond |
| 05/17/2007 | US20070111151 Surface modified quartz glass crucible and its modification process |
| 05/17/2007 | US20070108450 Reduction of carrot defects in silicon carbide epitaxy |
| 05/17/2007 | US20070108444 Semiconductor substrate and manufacturing method thereof |
| 05/17/2007 | US20070107653 Vapor phase growth apparatus and method of fabricating epitaxial wafer |
| 05/16/2007 | EP1785512A1 Silicon carbide single crystal wafer and method for manufacturing the same |
| 05/16/2007 | EP1785511A1 Silicon wafer, process for producing the same and method of growing silicon single crystal |
| 05/16/2007 | EP1784871A1 Method for producing a thin-film chalcopyrite compound |
| 05/16/2007 | EP1784529A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 05/16/2007 | EP1784528A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 05/16/2007 | EP1456436B1 Method for producing particles with diamond structure |
| 05/16/2007 | CN1965112A III group nitride crystal and method for preparation thereof, and III group nitride crystal substrate and semiconductor device |
| 05/16/2007 | CN1965111A Manufacture of cadmium mercury telluride |
| 05/16/2007 | CN1964088A Ⅲ族氮化物半导体基板 Ⅲ nitride semiconductor substrate |
| 05/16/2007 | CN1962965A Process for preparing lead tungstate-doped crystal |
| 05/16/2007 | CN1962964A Nano monocrystalline diamond and method for making same |
| 05/16/2007 | CN1316567C Preparation of green light gallium nitride base LED epitaxial wafer by adopting multiquantum well |
| 05/16/2007 | CN1316549C Discharge electrode, discharge lamp and method for producing discharge electrode |
| 05/16/2007 | CN1316078C Method for producing magnesia whisker using magnesite |
| 05/16/2007 | CN1316077C Technology for continuous producing four-feet shape zine oxide whisker and rotating furnace thereof |
| 05/16/2007 | CN1316075C Monocrystal mfg process |
| 05/16/2007 | CN1316074C Evaluation technology of reactivity of quartz glass and fused silicon and vibration of fused silicon surface |
| 05/16/2007 | CN1316072C Low defect density, ideal oxygen precipitating silicon |
| 05/16/2007 | CN1316071C Method for preparing magnesia crystal by using temperature control arc furnace |
| 05/16/2007 | CN1316070C Substrate for epitaxy |
| 05/16/2007 | CN1316069C Solid phase single crystal growing method |
| 05/16/2007 | CN1315748C Surface modifying method for quartz glass crucible and surface modified crucible |
| 05/16/2007 | CN1315605C Supersonic liquid phase reduction process for preparing monodisperse nano germanium crystal |
| 05/15/2007 | US7217321 Microfluidic protein crystallography techniques |
| 05/15/2007 | US7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 05/10/2007 | WO2007052982A1 Piezoelectric single crystal and method of production of same, piezoelectric element, and dielectric element |
| 05/10/2007 | WO2007052632A1 PROCESS FOR PRODUCING RUTILE (TiO2) SINGLE CRYSTAL, RUTILE (TiO2) SINGLE CRYSTAL, AND OPTICAL ISOLATOR COMPRISING THE SAME |
| 05/10/2007 | WO2007051481A2 Use of quasi-one-dimensional polymers based on the metal-chalcogen-halogen system |
| 05/10/2007 | WO2005005653A3 Crystallization reagent matrices and related methods and kits |
| 05/10/2007 | US20070105349 Epitaxial semiconductor structures having reduced stacking fault nucleation sites |
| 05/10/2007 | US20070104639 Method for manufacturing garnet single crystal and garnet single crystal manufactured thereby |
| 05/10/2007 | US20070102709 P-type group ii-vi semiconductor compounds |
| 05/10/2007 | US20070102111 Controlled nanotube fabrication and uses |
| 05/10/2007 | US20070102067 Method for producing magnetically active shape memory metal alloy |
| 05/10/2007 | US20070101932 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 05/10/2007 | US20070101930 Feature forming methods to reduce stacking fault nucleation sites |
| 05/10/2007 | US20070101926 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer |
| 05/09/2007 | EP1783825A1 Silicon carbide single crystal and method of etching the same |
| 05/09/2007 | EP1783250A2 Semiconductor material, production method thereof and semiconductor device |
| 05/09/2007 | EP1783098A1 Cooled lump from molten silicon and process for producing the same |
| 05/09/2007 | EP1782448A1 New material for vapor sources of alkali and alkaline earth metals and a method of its production |
| 05/09/2007 | EP1781701A2 Progesterone receptor structure |
| 05/09/2007 | EP1495166B1 Method for producing for producing mono-crystalline structures |
| 05/09/2007 | CN1961259A Fabrication and use of superlattice |
| 05/09/2007 | CN1961100A Directionally controlled growth of nanowhiskers |
| 05/09/2007 | CN1960014A Nitride-based semiconductor substrate and method of making the same |
| 05/09/2007 | CN1958888A Method for preparing Nano dendritic crystal of lead sulfide |
| 05/09/2007 | CN1958887A Single crystalline A-plane nitride semiconductor wafer having orientation flat |
| 05/09/2007 | CN1958886A Method for producing semiconductor crystal |
| 05/09/2007 | CN1958885A Microwave molten salt growth method for synthesizing sheet crystal SrTi03 |
| 05/09/2007 | CN1958884A Method for preparing dielectric crystal of calcium tungstate rapidly |
| 05/09/2007 | CN1958883A Crystal of barium tellurium aluminate, preparation method and application |
| 05/09/2007 | CN1958882A Method for synthesizing sheet single crystal grains of sodium niobate through molten salt growth method |
| 05/09/2007 | CN1958881A Boratory laser crystal Li6R(1-x)REx(B03)3 and preparation method, and application |
| 05/09/2007 | CN1958880A Method for assembling pellets in submicro to ordered structural crystal in large area |
| 05/09/2007 | CN1958879A Method for carrying out epitaxial growth of single crystal film of nitride by using mask in situ |
| 05/09/2007 | CN1958877A Periodic monocrystalline Nano structure of castellated ZnO, preparation method |
| 05/09/2007 | CN1958876A Monocrystal film of transparent electro-conductive oxide with structure of perovskite |
| 05/09/2007 | CN1958841A Growth of very uniform silicon carbide epitaxial layers |
| 05/09/2007 | CN1314842C Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| 05/09/2007 | CN1314841C Device and method for supplementing melt growth crystal by crucible lifting method |
| 05/09/2007 | CN1314840C Method for producing land plaster whiskers from phosphoric acid |
| 05/08/2007 | US7215456 Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method |
| 05/08/2007 | US7214599 High yield method for preparing silicon nanocrystal with chemically accessible surfaces |
| 05/08/2007 | US7214268 Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer |
| 05/08/2007 | US7214267 Silicon single crystal and method for growing silicon single crystal |
| 05/03/2007 | WO2007049668A1 Method of forming scribe line on substrate of brittle material and scribe line forming apparatus |
| 05/03/2007 | WO2007013881A3 Selection and deposition of nanoparticles using co2-expanded liquids |
| 05/03/2007 | US20070100561 Crystals of DPP-IV |
| 05/03/2007 | US20070099800 Enhanced melt-textured growth |
| 05/03/2007 | US20070098618 Artificial corundum crystal |
| 05/03/2007 | US20070097182 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
| 05/03/2007 | US20070095273 Method for producing crystal of fluoride |
| 05/03/2007 | DE10136605B4 Verfahren zum Wachsen von Galliumnitrid-Halbleitermaterial A method of growing gallium nitride semiconductor material |
| 05/02/2007 | EP1780781A1 Process for producing silicon wafer and silicon wafer produced by the process |
| 05/02/2007 | EP1780315A2 Boron doped diamond |
| 05/02/2007 | EP1780314A2 Method for manufacturing silicon single crystal |
| 05/02/2007 | EP1778897A1 Iii-nitride materials including low dislocation densities and methods associated with the same |
| 05/02/2007 | EP1778890A1 Method for production of reactors for the decomposition of gases |
| 05/02/2007 | EP1334525B1 Precursor solutions and methods of using same |
| 05/02/2007 | CN1957445A Flexible single-crystal film and method of manufacturing the same |
| 05/02/2007 | CN1957117A Group III nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device |
| 05/02/2007 | CN1957116A Nanocrystal diamond film, process for producing the same and apparatus using nanocrystal diamond film |
| 05/02/2007 | CN1956921A Cooled lump from molten silicon and process for producing the same |
| 05/02/2007 | CN1956213A Semiconductor material, production method thereof and semiconductor device |