Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2007
11/21/2007EP1856151A2 Estrogen receptor structure
11/21/2007CN101076618A System for continuous growing of monocrystalline silicon
11/21/2007CN101075556A Method for growing semiconductor crystal with third-family nitride as material on silicon substrate and its device
11/21/2007CN101074493A Method for synthesizing supefine CdSe and CdTe nano-crystal
11/21/2007CN101074492A Sulfide nano-tube array of semiconductor and its production
11/21/2007CN101074491A Method for growing barium strontium titanate on metal titanium-based substrate
11/21/2007CN101074490A Method for producing spherical, tie-shaped and octahedral polycrystalline Ce0.6Zr0.3Y0.1O2 particles of um sizes
11/21/2007CN101074489A 硅晶片 Silicon wafer
11/21/2007CN101074488A Device and method for manufacturing crystal or polycrystal material especially polysilicon
11/21/2007CN100350561C Method for fabricating SIGE substrate materials on metastable insulator and substrate materials
11/21/2007CN100350554C Process for preparing a stabilized ideal oxygen precipitating silicon wafer
11/21/2007CN100350300C Magnetic garnet material, Faraday rotor, optical element, bismuth substituted rare earth almandine monocrystal film and its preparation and crucible
11/21/2007CN100350082C System for growing silicon carbide crystals
11/21/2007CN100350081C Flux method for growth of gallium phosphate crystal
11/21/2007CN100349814C Reinorcing method of quartz glass material and reinforced quartz glass crucible
11/20/2007US7298544 Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method
11/20/2007US7297989 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
11/20/2007US7297763 Mixture of IGF-1 and N,N-bis(3-D-gluconamidopropyl)-deoxycholamine that binds specifically to IGF-1 and blocks binding of IGFBP-1 and IGFBP-3; used as a standard for identifying IGF-1 indirect agonists
11/20/2007US7297625 Group III-V crystal and manufacturing method thereof
11/20/2007CA2480117C Spinel substrate and heteroepitaxial growth of iii-v materials thereon
11/15/2007WO2007130484A2 A direct pyrolysis route to gan quantum dots
11/15/2007WO2007128522A2 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing ih-n substrate
11/15/2007WO2007128045A1 Microfluidic systems using surface acoustic energy and method of use thereof
11/15/2007WO2007107757A3 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
11/15/2007US20070261633 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device
11/15/2007DE19854487B4 Verfahren zur Herstellung von kubischem Bornitrid Process for preparing cubic boron nitride
11/15/2007CA2589021A1 Crystalline imatinib base and production process therefor
11/14/2007EP1855312A1 PROCESS FOR PRODUCING SiC SINGLE-CRYSTAL SUBSTRATE
11/14/2007EP1742870B1 Method and installation for the production of blocks of a semiconductor material
11/14/2007EP1448804B1 METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA M sb n+1 /sb AX sb n /sb , FILM OF THE COMPOUND AND ITS USE
11/14/2007EP1158076B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
11/14/2007CN101072901A Process for producing high quality large size silicon carbide crystals
11/14/2007CN101072630A A method of improving the crystalline perfection of diamond crystals
11/14/2007CN101071857A Secondary cell anode material and its preparing method
11/14/2007CN101071794A III-V crystal and production method
11/14/2007CN101070621A Low defect density, self-interstitial dominated silicon
11/14/2007CN101070620A Dipping type silicon-piece making method
11/14/2007CN101070619A GaN晶体衬底 GaN crystal substrate
11/14/2007CN101070618A Monocrystal AIN nano chain
11/14/2007CN101070617A Method for preparing briented growth dielectric-constant adjustable strontium lead titanate film
11/14/2007CN101070616A Yb-doped gadolinium germanate, lanthanum germanate and its melt-method growth process
11/14/2007CN101070615A Method for preparing barium calcium columbate column-like monocrystal particles
11/14/2007CN101070614A Single-crystal zinc-oxide nano column array and preparing method
11/14/2007CN101070613A Method for preparing single-crystal diamond by immersion type solid carbon resource
11/14/2007CN101070612A Method for preparing tin-oxide mono-crystal film
11/14/2007CN101070607A Novel glittering crystal LaBr3Ce3+ crucible-lowering method growth process
11/14/2007CN101070598A Method for preparing solar-grade silicon material by melt-salt electrolysis method
11/14/2007CN101070162A Composite hollow ball formed from radial densed-arranged zinc silicate nano wire and preparing method
11/14/2007CN100349271C Process for growing high crystalline quality zinc oxide thin film on silicon substrate under low temperature
11/14/2007CN100348786C Method of growing telluronium manganese mercury crystal
11/14/2007CN100348785C Lithium tantalate substrate and process for producing the same
11/14/2007CN100348784C Lithium tantalate substrate and method for producing same
11/14/2007CN100348783C Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
11/14/2007CN100348782C Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core
11/14/2007CN100348490C Ultra-fine whisker type modified aluminum hydroxide and its preparation method
11/13/2007US7294207 Gas-admission element for CVD processes, and device
11/13/2007US7294203 Heat shielding member of silicon single crystal pulling system
11/13/2007US7294202 Process for manufacturing self-assembled nanoparticles
11/13/2007US7294201 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
11/13/2007US7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
11/13/2007US7294199 Nitride single crystal and producing method thereof
11/13/2007US7294198 Process for producing single-crystal gallium nitride
11/13/2007US7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
11/08/2007WO2007125914A1 Method for manufacturing gallium nitride crystal and gallium nitride wafer
11/08/2007WO2007066215A3 High crystalline quality synthetic diamond
11/08/2007US20070257334 Process for producing a iii-n bulk crystal and a free-standing iii-n substrate, and iii-n bulk crystal and free-standing iii-n substrate
11/08/2007US20070256630 Method and apparatus for aluminum nitride monocrystal boule growth
11/08/2007US20070256629 Direct pyrolysis route to GaN quantum dots
11/08/2007DE102007013167A1 Gruppe III-Nitrid-Halbleiterdünnfilm und Gruppe III-Nitrid-Halbleiterleuchtvorrichtung Group III nitride semiconductor thin film and group III nitride semiconductor light-emitting device
11/07/2007EP1852905A1 Method of selective etching and silicon single crystal substrate
11/07/2007EP1852896A1 Diamond substrate and method for fabricating the same
11/07/2007EP1852528A1 Method and apparatus for aluminum nitride monocrystal boule growth
11/07/2007EP1852527A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same
11/07/2007EP1852526A1 Method and set of tools for checking the crystallisation conditions of biological macromolecules
11/07/2007EP1852480A1 Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
11/07/2007EP1852407A1 Tantalum carbide-covered carbon material and process for producing the same
11/07/2007EP1851369A1 Gallium nitride light emitting devices on diamond
11/07/2007EP1851368A1 Apparatus and process for crystal growth
11/07/2007EP1851310A2 Crystal structure of tak1-tab1
11/07/2007CN101066761A Process of synthesizing spherical doped polycrystalline lithium niobate material with homogeneous component
11/07/2007CN100347835C Laser annealing apparatus and annealing method
11/07/2007CN100347821C Producing method for compound semiconductor layer and luminescent device, gas phase producing apparatus
11/07/2007CN100347346C Method for producing crystal of fluoride
11/07/2007CN100347345C Method for preparing multi-branched hydroxy manganese oxide single crystal nanometer flower
11/07/2007CN100347083C Silicon manufacturing apparatus
11/06/2007US7291223 Epitaxial organic layered structure and method for making
11/06/2007US7291218 Method of fabricating orientation film for liquid crystal display device
11/01/2007WO2007123735A1 Methods for controllable doping of aluminum nitride bulk crystals
11/01/2007WO2007123169A1 Process and apparatus for producing granular silicon
11/01/2007WO2007123093A1 Single crystal sapphire substrate
11/01/2007WO2007122949A1 Apparatus for producing nitride single crystal
11/01/2007WO2007122867A1 Process for producing nitride single-crystal and apparatus therefor
11/01/2007WO2007122866A1 Process for producing single crystal
11/01/2007WO2007122865A1 Method for manufacturing single crystal of nitride
11/01/2007WO2007122833A1 Method for measuring distance between reference reflector and melt surface, method for control the position of melt surface using same, and silicon single crystal producing apparatus
11/01/2007US20070254462 Method and apparatus for doping semiconductors
11/01/2007US20070251443 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby
10/2007
10/31/2007EP1849893A1 Metal fluoride single crystal pulling apparatus and process for producing metal fluoride single crystal with the apparatus
10/31/2007EP1848844A1 Electromagnetic pumping of liquid silicon in a crystal growing process
10/31/2007EP1848843A1 Method for producing directionally solidified silicon ingots
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