| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/14/2007 | EP1287188B1 Epitaxial silicon wafer free from autodoping and backside halo |
| 03/14/2007 | CN1930327A Apparatus for production of crystal of group iii element nitride and process for producing crystal of group III element nitride |
| 03/14/2007 | CN1930079A Elongated nano-structures and related devices |
| 03/14/2007 | CN1929090A Method of producing a nitride semiconductor device and nitride semiconductor device |
| 03/14/2007 | CN1929088A Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
| 03/14/2007 | CN1928167A Big-size potassium fluorine boron beryllium crystal, its growing in hydro-thermal method and frequency-converter |
| 03/14/2007 | CN1928166A Method for growing diamond membrane in discontinuous cycling process |
| 03/14/2007 | CN1304648C Bismuth sodium potassium titanate series nonlead ferroelectric piezoelectric monocrystal and its growing method and equipment |
| 03/14/2007 | CN1304647C Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal |
| 03/14/2007 | CN1304646C Preparation of beta-FeSi2 single crystal by pulsing laser method |
| 03/13/2007 | US7190049 Coupling the self-assembly of copolymers, in thin films with subsequent chemical modification to remove one component of the copolymer; magnetic storage media, magnetoresistance devices |
| 03/13/2007 | US7189665 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device |
| 03/13/2007 | US7189588 Group III nitride semiconductor substrate and its manufacturing method |
| 03/08/2007 | US20070054468 Method for producing silicon epitaxial wafer |
| 03/08/2007 | US20070054425 Apparatus for measuring semiconductor physical characteristics |
| 03/08/2007 | US20070053823 Technique of production of fancy red diamonds |
| 03/08/2007 | US20070051303 Semiconductor single crystal manufacturing apparatus |
| 03/08/2007 | DE19780520B4 Stab aus polykristallinem Silicium und Herstellungsverfahren hierfür Rod of polycrystalline silicon and manufacturing method thereof |
| 03/08/2007 | DE102006033919A1 Polierzusammensetzung und Polierverfahren Polishing composition and polishing method |
| 03/07/2007 | EP1760496A1 An optical medium, an optical lens and a prism |
| 03/07/2007 | EP1419538B1 Methods and reactors for forming superconductor layers |
| 03/07/2007 | EP1372837B1 Application of stabilized zirconium oxide single crystal for observation window |
| 03/07/2007 | EP1215730B1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 03/07/2007 | EP1178523B1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
| 03/07/2007 | CN1926664A Methods to fabricate MOSFET devices using selective deposition process |
| 03/07/2007 | CN1926266A Reduction of carrot defects in silicon carbide epitaxy |
| 03/07/2007 | CN1924119A Ytterbium-calcium-lithium-niobium mixed garnet crystal and laser device |
| 03/07/2007 | CN1924118A Ytterbium-calcium-niobium mixed garnet crystal and laser device |
| 03/07/2007 | CN1924117A Preparation method of two-dimensional plane gold nano single crystal plate |
| 03/07/2007 | CN1924115A Novel method of preparing cube zirconium oxide single crystal |
| 03/07/2007 | CN1924114A 单晶及其应用 Crystal and its application |
| 03/07/2007 | CN1924113A Autoclave synthesis method of sulfur group compound |
| 03/07/2007 | CN1303264C Method for preparing aragonite type calcium carbonate whisker |
| 03/07/2007 | CN1303263C Charge for vertical boat growth process and use thereof |
| 03/07/2007 | CN1303037C Preparation method of mullite whiskers |
| 03/06/2007 | US7187079 Stacked memory cell having diffusion barriers |
| 03/06/2007 | US7186620 Method of making substrates for nitride semiconductor devices |
| 03/06/2007 | US7186295 Quartz thin film |
| 03/01/2007 | WO2007023985A1 Piezoelectric device, liquid ejecting head using same, and liquid ejector |
| 03/01/2007 | WO2007023911A1 Process for producing semiconductor substrate |
| 03/01/2007 | WO2007023722A1 METHOD FOR PRODUCTION OF GaxIn1-xN (0≤x≤1) CRYSTAL, GaxIn1-xN (0≤x≤1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCTION OF GaN CRYSTAL, GaN CRYSTAL SUBSTRATE AND PRODUCT |
| 03/01/2007 | WO2007023699A1 Method for producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods |
| 03/01/2007 | WO2007023548A1 Thermoelectric material and process for producing the same |
| 03/01/2007 | DE10328842B4 Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe Susceptor for a chemical vapor deposition method for processing a semiconductor wafer by chemical vapor deposition and by the process machined wafer |
| 02/28/2007 | EP1758180A1 Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate |
| 02/28/2007 | EP1758154A1 Silicon wafer manufacturing method and silicon wafer |
| 02/28/2007 | EP1757717A1 Method to deposit ZnO-based crystalline layer and substrate for it |
| 02/28/2007 | EP1756337A2 A melter assembly and method for charging a crystal forming apparatus with molten source material |
| 02/28/2007 | EP1595280B8 Buffer structure for heteroepitaxy on a silicon substrate |
| 02/28/2007 | CN1922716A Vapor-phase growth method |
| 02/28/2007 | CN1922346A Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method |
| 02/28/2007 | CN1922345A Method of manufacturing compound single crystal and apparatus for manufacturing it |
| 02/28/2007 | CN1921158A Process of forming an as-grown active p-type iii-v nitride compound |
| 02/28/2007 | CN1920123A Low-temperature solvent heat growth method of cadmium telluride single-crystal |
| 02/28/2007 | CN1920122A Lead magnesium niobate-lead titanate piezoelectric single-crystal material for medical ultrasonic transducer |
| 02/28/2007 | CN1920121A CaB4 compound crystal and preparation method thereof |
| 02/28/2007 | CN1920119A Method of preparing nanocrystalline silicon thin film in high pressure heat filling hydrogen and special apparatus for the same |
| 02/28/2007 | CN1919441A Dissolvent hot liquid state phase-change method for synthesizing superhard micro nano material |
| 02/28/2007 | CN1302529C Three buffer layer method for preparing high quality zinc oxide monocrystalline film |
| 02/28/2007 | CN1302518C High resistivity silicon carbide single crystal and mfg. method |
| 02/28/2007 | CN1302159C Apparatus for growth of monocrystal semiconductor nano wire and use thereof |
| 02/28/2007 | CN1302157C Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
| 02/28/2007 | CN1302156C Method for producing mono-crystalline structures |
| 02/28/2007 | CA2559848A1 Carnitine palmitoyltransferase-2 (cpt-2) crystals |
| 02/27/2007 | US7182996 Deposting nanowires on a substrate |
| 02/27/2007 | US7182812 Direct synthesis of oxide nanostructures of low-melting metals |
| 02/27/2007 | US7182810 Protein temperature evaporation-controlled crystallization device and method thereof |
| 02/22/2007 | WO2007020971A1 Method for manufacture of substrate having ferroelectric layer |
| 02/22/2007 | WO2007020744A1 Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method |
| 02/22/2007 | WO2007020706A1 Silicon electromagnetic casting apparatus and method for operating said apparatus |
| 02/22/2007 | WO2007020416A1 Nanoparticles |
| 02/22/2007 | WO2007020092A1 A method of producing silicon carbide epitaxial layer |
| 02/22/2007 | WO2005072353A3 Crystal forming devices and systems and methods for making and using the same |
| 02/22/2007 | US20070042575 Crystallization apparatus and method of amophous silicon |
| 02/22/2007 | US20070042560 Method for growing thin nitride film onto substrate and thin nitride film device |
| 02/22/2007 | US20070040240 Polycrystalline dysprosium oxide having a luminescent dopant that emits one or more visible light wavelengths when stimulated by radiation generated by the discharge; for enclosing ceramic discharge vessels for metal halide lamps |
| 02/22/2007 | US20070040219 III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer |
| 02/22/2007 | CA2617972A1 Nanoparticles |
| 02/21/2007 | EP1754981A1 ZnO SINGLE CRYSTAL AS SUPER HIGH SPEED SCINTILLATOR AND METHOD FOR PREPARATION THEREOF |
| 02/21/2007 | EP1754811A1 Iii group nitride crystal and method for preparation thereof, and iii group nitride crystal substrate and semiconductor device |
| 02/21/2007 | EP1754810A1 Group iii nitride semiconductor crystal, method for producing same, and group iii nitride semiconductor device |
| 02/21/2007 | EP1754809A2 Large volume oriented single crystals with a homogeneous refractive index and low stress related birefringence |
| 02/21/2007 | EP1754808A1 Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test device |
| 02/21/2007 | EP1754806A1 Method for casting polycrystalline silicon |
| 02/21/2007 | EP1753611A2 Iii-v semiconductor nanocrystal complexes and methods of making same |
| 02/21/2007 | EP1590171A4 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
| 02/21/2007 | EP1446695B1 Semiconductor liquid crystal composition and methods for making the same |
| 02/21/2007 | CN2871563Y Sulfur-compound semiconductor single crystal device for preparing lead |
| 02/21/2007 | CN1918697A Process for producing monocrystal thin film and monocrystal thin film device |
| 02/21/2007 | CN1916245A Quality estimating method for cropping a single crystal ingot |
| 02/21/2007 | CN1916244A Laser crystal of lithium lanthanum molybdate with neodymium being doped, preparation method and usage |
| 02/21/2007 | CN1916243A Self-double frequency laser crystal of calcium gadolinium vanadic acid with rare earth ions being doped, and preparation method |
| 02/21/2007 | CN1916242A Laser crystal of calcium gadolinium boric acid with erbium ytterbium dual being doped, preparation method and application |
| 02/21/2007 | CN1301348C Method for preparing mullite single crystal nano belt |
| 02/21/2007 | CN1301347C Preparation of single-crystal of thermal negative expanding material ZrW2O8 |
| 02/21/2007 | CN1301346C Method for fast preparing single crystal tellurium in one dimension Nano structure from powder of fellurium |
| 02/21/2007 | CN1301212C Method for adjusting unidimensional nano material direction and shape |
| 02/20/2007 | US7180198 Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon |
| 02/20/2007 | US7179667 Semiconductor base material and method of manufacturing the material |
| 02/20/2007 | US7179330 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer |