Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/2006
09/27/2006CN1277001C Process for fluid-tight-free synthesis of gallium arsenide polycrystalline material
09/27/2006CN1277000C Method for preparing double tungstate crystal with stoichiometric ratio
09/27/2006CN1276999C Method for growing SiC monocrystals
09/27/2006CN1276998C Method and system for stabilizing dendritic web crystal growth
09/26/2006US7112826 Single crystal GaN substrate semiconductor device
09/26/2006US7112538 In situ growth of oxide and silicon layers
09/26/2006US7112366 Chemical monolayer and micro-electronic junctions and devices containing same
09/26/2006US7112243 Method for producing Group III nitride compound semiconductor
09/26/2006US7112242 Manufacturing method for producing silicon carbide crystal using source gases
09/21/2006WO2006098652A1 Personified grown jewellery diamond and a method for the production thereof
09/21/2006WO2006098458A1 Container for easily oxidizable or hygroscopic substance, and method for heating and pressuring treatment of easily oxidizable or hygroscopic substance
09/21/2006WO2006098288A1 Method and apparatus for producing group iii nitride crystal
09/21/2006CA2597623A1 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
09/20/2006EP1703550A1 Vapor growth device and production method for epitaxial wafer
09/20/2006EP1703002A2 Multilayer substrate, method for producing a multilayer substrate, and device
09/20/2006EP1702352A2 Nanotube fabrication basis
09/20/2006EP1485524A4 Apparatus for growing monocrystalline group ii-vi and iii-v compounds
09/20/2006EP1449013A4 Method of making high repetition rate excimer laser crystal optics and uv-200nm transmitting optical floride crystal
09/20/2006EP1181401B1 Semi-insulating silicon carbide without vanadium domination
09/20/2006EP1091979B1 Seeding crystals for the preparation of peptides or proteins
09/20/2006CN1836062A Process for producing wafer
09/20/2006CN1835255A Production method for light emitting element
09/20/2006CN1835254A Production method for light emitting element
09/20/2006CN1834311A Method and appts. of using molten lead iodide to grow monocrystal
09/20/2006CN1834310A Method of preparing second-order non-linear optical materials, and uses thereof
09/20/2006CN1834309A Method of synthetizing two kinds of different shaped silicon carbid nano wire
09/20/2006CN1834308A Method of synthetizing silicon carbide nano rods
09/20/2006CN1276503C ZnO/saphire substrate and its making process
09/20/2006CN1276484C Anneal wafer manufacturing method and anneal wafer
09/19/2006US7108745 Formation method for semiconductor layer
09/14/2006WO2006096201A2 Method for preparing group iv nanocrystals with chemically accessible surfaces
09/14/2006WO2006095536A1 Method of growing single crystal and single crystal growing apparatus
09/14/2006WO2006094980A2 Photovoltaic cell containing a semiconductor photovoltaically active material
09/14/2006WO2006062955B1 Process for producing high quality large size silicon carbide crystals
09/14/2006WO2005071135A3 Tantalum and other metals with (110) orientation
09/14/2006US20060205197 Compound semiconductor devices and methods of manufacturing the same
09/14/2006US20060201413 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
09/14/2006DE102005010655A1 Method to produce optical parts for microlithography, associated lens systems and its application uses optical garnets, cubic spinels, cubic perovskites, and cubic M (II) - M (Iv) oxides
09/14/2006DE102005010654A1 Production of high-homogeneous, tension-poor and large volume calcium fluoride single crystal e.g. for production of lenses, prisms and optical components for deep ultraviolet photolithography, comprises cooling crystal after its breeding
09/14/2006CA2599412A1 Photovoltaic cell containing a semiconductor photovoltaically active material
09/13/2006EP1701179A1 Method for producing optical elements for microlithography, lens systems obtainable therewith and their use
09/13/2006EP1700936A1 Method to grow homogene and low-strained monocrystals
09/13/2006EP1700935A1 Nano wires and method of manufacturing the same
09/13/2006EP1699951A2 Method of producing self-supporting substrates comprising iii-nitrides by means of heteroepitaxy on a sacrificial layer
09/13/2006EP1699737A1 Silicon feedstock for solar cells
09/13/2006CN1833311A Epitaxial growth process
09/13/2006CN1833310A 半导体层 Semiconductor layer
09/13/2006CN1833294A Method of producing biaxially textured buffer layers and related articles, devices and systems
09/13/2006CN1831214A Method for preparing silicon carbide whisker
09/13/2006CN1831213A Method for preparing silicon carbide wafer
09/13/2006CN1831212A Method for by composition cladding germanium nanometer wire
09/13/2006CN1831211A Method for preparing single crystal ZnO based rare magnetism semi-conducting nanometer rod blended by magnetic metal ion
09/13/2006CN1831210A Method for preparing multi-branched hydroxy manganese oxide single crystal nanometer flower
09/13/2006CN1275335C Single Crystal gallium nitride base board and its growth method and manufacture method
09/13/2006CN1275296C Nitride semiconductor substrate with ground edge and edge processing method
09/13/2006CN1274888C Magnetic single crystal with controllable magnetic field and bidirectional shape memory effect and preparing method thereof
09/13/2006CN1274887C Method for preparing tungstate single crystal
09/13/2006CN1274886C Method and apparatus for artificial synthetic rutile single crystal by TiO2 micropowder flame melt method
09/13/2006CN1274859C Monocrystalline nickel-base alloy with high flexing antioxygenizing and its preparation
09/12/2006US7106938 Self assembled three-dimensional photonic crystal
09/12/2006US7105865 AlxInyGa1−x−yN mixture crystal substrate
09/12/2006US7105428 Systems and methods for nanowire growth and harvesting
09/12/2006US7105055 In situ growth of oxide and silicon layers
09/12/2006US7105049 Method of manufacturing single crystal calcium fluoride
09/07/2006US20060197529 Magnetic resonance spectrometer
09/07/2006US20060197035 Organic film vapor deposition method and a scintillator panel
09/07/2006US20060197027 Scintillator crystals, method for making same, use thereof
09/07/2006US20060197026 Scintillator crystals, method for making same, use thereof
09/07/2006US20060196410 Whisker-grown body and electrochemical capacitor using the same
09/07/2006US20060196309 Method for manufacturing metal nanorods and use thereof
09/07/2006DE19537430B4 Verfahren zum Herstellen von hochreinem Siliciumcarbidpulver und Verfahren zum Herstellen eines Siliciumcarbid-Einkristalls A method for producing high purity silicon carbide powder and method for producing a silicon carbide single crystal
09/06/2006EP1697965A1 NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS
09/06/2006EP1131176B1 Single crystal vane segment and method of manufacture
09/06/2006CN1829830A Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
09/06/2006CN1829829A Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
09/06/2006CN1829654A Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
09/06/2006CN1827863A Method for preparing monodisperse germanium nanocrystal by thermolysis
09/06/2006CN1274008C Group III nitride compound semiconductor device and method for manufacturing the same
09/06/2006CN1273655C Simulated diamond gemstones formed of aluminum nitride and aluminium nitride silicon carbide alloys
09/06/2006CN1273654C Growth process for monocrystal of gallium nitride, substrates of gallium nitride monocrystal and manufacture thereof
09/06/2006CN1273653C Preparation process of zinc oxide bar-shaped single crystal nano-probe
09/06/2006CN1273651C Method and appts. for pulling crystal
09/06/2006CN1273650C Crystal growth container and method
09/05/2006US7102828 Optical element and manufacturing method thereof
09/05/2006US7101794 Coated semiconductor wafer, and process and device for producing the semiconductor wafer
09/05/2006US7101774 Method of manufacturing compound single crystal
09/05/2006US7101725 Solution to thermal budget
09/05/2006US7101436 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
09/05/2006US7101433 High pressure/high temperature apparatus with improved temperature control for crystal growth
08/2006
08/31/2006WO2006091448A2 Chemical vapor deposition reactor having multiple inlets
08/31/2006WO2006090104A1 Apparatus and process for crystal growth
08/31/2006US20060194417 Polycrystalline sillicon substrate
08/31/2006US20060194416 Method for producing single crystal ingot from which semiconductor wafer is sliced
08/31/2006US20060194348 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
08/31/2006US20060194347 Method for fabricating superlattice semiconductor structure using chemical vapor diposition
08/31/2006US20060191470 Method and apparatus for growing multiple crystalline ribbons from a single crucible
08/31/2006US20060191468 Process for producing single crystal
08/31/2006US20060191467 Group iii nitride based semiconductor substrate and process for manufacture thereof
08/31/2006DE112004001866T5 Verbindungshalbleiter-Einkristall und Herstellungsverfahren dafür Compound semiconductor single crystal and manufacturing method thereof
08/30/2006EP1694887A2 Controlled growth of gallium nitride nanostructures