| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/24/2007 | CN1901222A Method and apparatus for epitaxially coating semiconductor wafer, and coated semiconductor wafer |
| 01/24/2007 | CN1901172A Semiconductor wafer and process for producing a semiconductor wafer |
| 01/24/2007 | CN1900387A Formulation and preparation of solar energy grade silicon single crystal material |
| 01/24/2007 | CN1900386A Method for epitaxial growing AlxGa1-xN single crystal film on saphire lining bottom material |
| 01/24/2007 | CN1900015A Quick preparing method for textured single phase hexagonal ferrite |
| 01/24/2007 | CN1296970C Nitride semiconductor, semiconductor device and manufacturing method thereof |
| 01/24/2007 | CN1296969C Method of forming semiconductor device |
| 01/24/2007 | CN1296529C Single crystal silicon wafer and single crystal silicon production method |
| 01/24/2007 | CN1296528C Apparatus and method for diamond production |
| 01/24/2007 | CN1296526C Annealed low defect density single crystal silicon |
| 01/24/2007 | CN1296525C Process for preparing defect free silicon crystal which allows for variability in process conditions |
| 01/23/2007 | US7166523 Silicon carbide and method of manufacturing the same |
| 01/23/2007 | US7166522 Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch |
| 01/23/2007 | US7166176 Cast single crystal alloy component with improved low angle boundary tolerance |
| 01/23/2007 | US7166162 Terbium type paramagnetic garnet single crystal and magneto-optical device |
| 01/23/2007 | US7166161 Anisotropic film manufacturing |
| 01/23/2007 | CA2331893C Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls |
| 01/18/2007 | WO2007007587A1 ORIENTATION CONTROLLED Co OXIDE POLYCRYSTAL |
| 01/18/2007 | WO2007007479A1 Process for producing single crystal |
| 01/18/2007 | WO2007007456A1 Process for producing single crystal |
| 01/18/2007 | WO2007006268A1 Method for production of a bead single crystal |
| 01/18/2007 | WO2006125069A3 A high resistivity silicon structure and a process for the preparation thereof |
| 01/18/2007 | WO2006097804A3 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| 01/18/2007 | WO2006031378A3 Progesterone receptor structure |
| 01/18/2007 | WO2005108635A3 Single crystal shape memory alloy devices and methods |
| 01/18/2007 | US20070015270 Crystalline PDE4D2 catalytic domain complex, and methods for making and employing same |
| 01/18/2007 | US20070015269 Crystals of DPP-IV |
| 01/18/2007 | US20070012943 Group III nitride semiconductor substrate and manufacturing method thereof |
| 01/18/2007 | DE102005032594A1 Verfahren zur Herstellung eines Bead-Einkristalls A process for preparing a bead single crystal |
| 01/18/2007 | DE102005030853A1 Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall A process for the production of doped semiconductor single crystals, and III-V semiconductor single crystal |
| 01/17/2007 | EP1744378A1 Piezoelectric single crystal element and method for fabricating the same |
| 01/17/2007 | EP1744190A2 A method of processing a substrate made of a ferroelectric single crystalline material |
| 01/17/2007 | EP1743961A1 Compound semiconductor substrate |
| 01/17/2007 | EP1743960A1 Self-coated single crystal, and production apparatus and process therefor |
| 01/17/2007 | EP1743055A1 Method for the growth of semiconductor ribbons |
| 01/17/2007 | EP1743054A1 Preparation of nanoparticle materials |
| 01/17/2007 | EP1742870A1 Method and installation for the production of blocks of a semiconductor material |
| 01/17/2007 | EP1399766B1 Exposure apparatus comprising an optical element made of an isometric crystal |
| 01/17/2007 | CN2858676Y Electric control device for zone melting silicon single crystal furnace |
| 01/17/2007 | CN1898778A Method for producing group iii nitride crystal, group iii nitride crystal obtained by such method, and group iii nitride substrate using same |
| 01/17/2007 | CN1896344A Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 01/17/2007 | CN1896343A Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 01/17/2007 | CN1896342A Ytterbium-doped lutecium disilicate laser crystal and its preparation |
| 01/17/2007 | CN1896341A Low-temperature alkaline-solution synthesis of oxygen metal inorganic compound monocrystal nano-material |
| 01/17/2007 | CN1896340A Homogeneous-thickness silicon-phase epitaxial-layer growth device and method |
| 01/17/2007 | CN1896339A Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties |
| 01/17/2007 | CN1896338A Growth of tricesium borate monocrystal cosolvent |
| 01/17/2007 | CN1896021A 石英玻璃坩埚 Quartz glass crucible |
| 01/17/2007 | CN1295790C Heavy current medium film and its manufacturing method, heavy-current medium storage, piezoelectric element |
| 01/17/2007 | CN1295527C Diamond-structure photo crystal with hollow-medium ball and preparing method thereof |
| 01/17/2007 | CN1295386C Method for growing gadolinium orthosilicate monocrystal |
| 01/17/2007 | CN1295384C Process for collimated beam shaped nano zinc oxide crystal whisker |
| 01/16/2007 | US7164187 Semiconductor and semiconductor substrate, method of manufacturing the same, and semiconductor device |
| 01/16/2007 | US7163874 Ferroelectric thin film manufacturing method, ferroelectric element manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus |
| 01/11/2007 | WO2007005816A2 Low-temperature catalyzed formation of segmented nanowire of dielectric material |
| 01/11/2007 | WO2007004730A1 Highly pure hexagonal boron nitride single crystal powder capable of emitting far-ultraviolet light at high brightness level, and method for production thereof |
| 01/11/2007 | WO2007004495A1 Process for producing crystal with supercrtical solvent, crystal growth apparatus, crystal, and device |
| 01/11/2007 | WO2006041660A3 100 mm silicon carbide wafer with low micropipe density |
| 01/11/2007 | WO2005122267A8 Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 01/11/2007 | US20070007242 Method and system for producing crystalline thin films with a uniform crystalline orientation |
| 01/11/2007 | US20070006797 Lithium tantalate substrate and method for producing same |
| 01/11/2007 | DE102005031692A1 New high ohmic silicon carbide single crystals, useful as substrates in semiconductor components, have controlled, low content of sulfur as electrically active multiple donor component |
| 01/10/2007 | EP1741809A1 Electrostatic charge controlling process for piezoelectric oxide single crystal and apparatus for electrostatic charge controlling process |
| 01/10/2007 | EP1741808A1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD |
| 01/10/2007 | EP1741807A1 Apparatus for production of crystal of group iii element nitride and process for producing crystal of group iii element nitride |
| 01/10/2007 | EP1740742A1 Manufacture of cadmium mercury telluride |
| 01/10/2007 | EP1740735A1 Heat treatment method for monocrystalline or directionally solidified structural components |
| 01/10/2007 | EP1740331A2 Method and arrangement for crystal growth from fused metals or fused solutions |
| 01/10/2007 | EP1606103A4 Rapid generation of nanoparticles from bulk solids at room temperature |
| 01/10/2007 | CN1894771A Non-polarity (Al, B, Inc, Ga) N Quantum pit |
| 01/10/2007 | CN1894611A Method for producing photon crystal and controllable defect therein |
| 01/10/2007 | CN1894446A Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/10/2007 | CN1894445A Process to produce a CU(IN,GA)SE2 single crystal powder and monograin membrane solarcell comprising this powder |
| 01/10/2007 | CN1894093A Vicinal gallium nitride substrate for high quality homoepitaxy |
| 01/10/2007 | CN1891867A Process and equipment for continuously producing tetrapod-like zinc oxide whisker |
| 01/10/2007 | CN1891866A Growth of colorless silicon carbide crystal |
| 01/10/2007 | CN1294629C Silicon semiconductor crystal wafers and manufacturing method for multiple semiconductor crystal wafers |
| 01/10/2007 | CN1294297C Process for preparing silicon carbide crystal whisker |
| 01/09/2007 | US7161173 P-type group II-VI semiconductor compounds |
| 01/09/2007 | US7161148 Tip structures, devices on their basis, and methods for their preparation |
| 01/09/2007 | US7161029 Prepared by mixing a lysine-based solution with sulfuric acid at -10 to 35 degrees C., and allowing crystals to form that are characterized by having peaks at diffraction angles 2 theta of 16.6 degrees and 17.0 degrees as measured by powder X-ray diffraction |
| 01/09/2007 | US7160763 Polycrystalline TFT uniformity through microstructure mis-alignment |
| 01/09/2007 | US7160617 Boron doped diamond |
| 01/09/2007 | US7160613 Stabilized semiconductor nanocrystals |
| 01/09/2007 | US7160388 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 01/09/2007 | US7160387 High purity silica crucible by electrolytic refining, and its production method and pulling method |
| 01/09/2007 | US7160381 Forming basic calcium phosphate whiskers or fine crystals on the surface of Ca4(PO4)20 particles by treating with a whisker-inducing solution and heating up to 1000 degrees C. to form a fast-setting, bioresorbable calcium phosphate cement |
| 01/09/2007 | CA2148290C Hot corrosion resistant single crystal nickel-based superalloys |
| 01/04/2007 | WO2007001184A1 Method for producing directionally solidified silicon ingots |
| 01/04/2007 | WO2007001031A1 Process for producing fine diamond and fine diamond |
| 01/04/2007 | WO2007000864A1 Quartz glass crucible for pulling up of silicon single crystal and process for producing the quartz glass crucible |
| 01/04/2007 | WO2007000271A1 Reinforced micromechanical part |
| 01/04/2007 | WO2006124152A3 Method for using a static electric field to induce crystallization and to control crystal form |
| 01/04/2007 | US20070004106 Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
| 01/04/2007 | US20070001175 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer |
| 01/04/2007 | US20070000429 Method for producing single crystal and single crystal |
| 01/04/2007 | DE20122681U1 Device for growing large volume single crystals has heating element arranged on side walls of melt crucible to prevent lateral radial heat flow |
| 01/04/2007 | DE102005030851A1 Device for heat-treating III-V semiconductor wafers comprises a wafer carrier with dimensions such that a cover is formed close to the wafer surface |
| 01/04/2007 | DE102005029162A1 Solar cell with a whisker structure of monocrystalline silicon wherein the whiskers are oriented randomly |
| 01/04/2007 | CA2840566A1 Lithium manganese compounds and methods of making the same |