C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2006
11/16/2006	US20060255481 Growing a desired portion of the nanowire, growing a sacrificial portion of the nanowire that is doped differently than the desired portion, differentially removing the sacrificial portion, and removing a growth stub from the desired portion, especially by etching
11/16/2006	US20060254498 Silicon single crystal, and process for producing it
11/16/2006	US20060254315 Process for the production of inverse opal-like structures
11/16/2006	DE19608885B4 Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern Method and apparatus for heating support bodies
11/16/2006	DE112004002173T5 Verfahren zur Herstellung eines epitaktischen Verbindungshalbleitersubstrats A process for producing a compound semiconductor epitaxial substrate
11/16/2006	DE102004050806A1 Verfahren zur Herstellung von (AI,Ga)N Einkristallen A process for the preparation of (AI, Ga) N single crystals
11/16/2006	DE10137857B4 Verfahren zur Herstellung eines Einkristalls A process for producing a single crystal
11/15/2006	EP1721031A1 Reduction of carrot defects in silicon carbide epitaxy
11/15/2006	EP0885316B1 Method for producing metal oxide nanorods, metal oxide nanorods and composite material containing these nanorods thus obtained
11/15/2006	CN1864245A Production method for silicon epitaxial wafer, and silicon epitaxial wafer
11/15/2006	CN1863946A Protein crystallization apparatus, method of protein crystallization, protein crystallizing agent and process for preparing the same
11/15/2006	CN1863945A Method of production of silicon carbide single crystal
11/15/2006	CN1863944A Production method for semiconductor crystal and semiconductor luminous element
11/15/2006	CN1862870A Nonaqueous electrolyte battery, lithium-titanium composite oxide, battery pack and vehicle
11/15/2006	CN1284887C Method of making sic single crystal and apparatus for making sic single crystal
11/15/2006	CN1284871C Refining process of high purity gallium for producing compound semiconductor
11/14/2006	US7135347 Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method
11/14/2006	US7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
11/14/2006	US7135057 Gas storage medium and methods
11/09/2006	WO2006118177A1 Oxide single crystal and method for production thereof, and single crystal wafer
11/09/2006	WO2006117939A1 Method for producing silicon wafer
11/09/2006	WO2006117621A1 Diamond transistor and method of manufacture thereof
11/09/2006	WO2005110916A3 Iii-v semiconductor nanocrystal complexes and methods of making same
11/09/2006	WO2005062091A3 Process for producing photonic crystals by irradiation of a photoreactive material
11/09/2006	WO2005036593A3 Deposition of silicon-containing films from hexachlorodisilane
11/09/2006	US20060252271 Atomic layer deposition using photo-enhanced bond reconfiguration
11/09/2006	US20060252166 Nitride semiconductor thin film and method for growing the same
11/09/2006	US20060252164 Process for producing gan substrate
11/09/2006	US20060249796 Influence of surface geometry on metal properties
11/09/2006	US20060249694 Marking of diamond
11/09/2006	US20060249071 Method and apparatus for crystal growth
11/08/2006	EP1718956A1 PROCESS FOR PREPARING CAF sb 2 /sb LENS BLANKS ESPECIALLY FOR 193 NM AND 157 NM LITHOGRAPHY WITH MINIMIZED DEFECTS
11/08/2006	EP1718784A1 Inlet system for an mocvd reactor
11/08/2006	EP1718562A2 Novel nanostructures and method for selective preparation
11/08/2006	CN1858307A Antimony and arsenic blended novel tellurium cadmium-mercury modified compound and its single crystal and film material
11/08/2006	CN1858002A Mercury-indium-tellurium-antimoy compound and its single crystal material and thin film material
11/08/2006	CN1857993A Mercury telluride, cadmium telluride and indium antimonide eutectic compound and its single crystal material and thin film material
11/08/2006	CN1283853C Preparation process for lithium niobate crystal with near stoichiometric ratio
11/08/2006	CN1283852C Method for growing gadolinium orthosilicate scintillation crystal
11/08/2006	CN1283851C Liquid phase method for synthesizing one-dimensional super long Nano line of metal copper
11/07/2006	US7132730 Bulk nitride mono-crystal including substrate for epitaxy
11/07/2006	US7132351 Method of fabricating a compound semiconductor layer
11/07/2006	US7132298 Fabrication of nano-object array
11/07/2006	US7132060 Scintillation substances (variants)
11/02/2006	WO2006115148A1 Silicon carbide single-crystal wafer and process for producing the same
11/02/2006	US20060243209 Substrate susceptors for receiving semiconductor substrates to be deposited upon
11/02/2006	US20060243208 Substrate susceptors for receiving semiconductor substrates to be deposited upon
11/02/2006	EP1717872A2 Method of producing nitride layer and method of fabricating vertical semiconductor light emitting device
11/02/2006	EP1717846A1 Vapor-phase deposition method
11/02/2006	EP1717356A1 Dast twin crystal, process for producing the same and use thereof
11/02/2006	EP1717355A1 Silicon single crystal, silicon wafer, production apparatus therefor and process for producing the same
11/02/2006	EP1226028A4 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation and their use
11/02/2006	DE10241973B4 Verfahren zur Epitaxie auf Silizium und nach dem Verfahren hergestelltes Halbleiterbauelement A method for epitaxial growth on silicon and the procedure semiconductor component produced
11/01/2006	CN1856862A Method to reduce stacking fault nucleation sites and reduce VF drift in bipolar devices
11/01/2006	CN1856599A Lithium tantalate substrate and method for producing same
11/01/2006	CN1856598A Lithium tantalate substrate and process for producing the same
11/01/2006	CN1856597A Lithium tantalate substrate and method for producing same
11/01/2006	CN1854353A Low defect density epitaxial wafer and a process for the preparation thereof
11/01/2006	CN1282771C Method for mfg. aluminum nitride bulk single crystal
11/01/2006	CN1282770C Device and method for growng large diameter 6H-SiC monocrystal with semiconductor property
11/01/2006	CN1282769C Artificial hair crystal and preparation method thereof
10/2006
10/31/2006	US7129154 Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
10/31/2006	US7129153 Process for forming polycrystalline silicon layer by laser crystallization
10/31/2006	US7129123 SOI wafer and a method for producing an SOI wafer
10/31/2006	US7129058 Method of production of a nanoparticle of a compound semiconductor in a cavity of protein
10/31/2006	US7128974 Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/31/2006	US7128846 Process for producing group III nitride compound semiconductor
10/26/2006	WO2006113719A2 Methods of preparing nanoparticles by reductive sonochemical synthesis
10/26/2006	WO2006113657A1 Method of and system for forming sic crystals having spatially uniform doping impurities
10/26/2006	WO2006112054A1 Silicon single crystal manufacturing method and silicon wafer
10/26/2006	WO2006112053A1 Silicon single crystal growing method, silicon wafer and soi substrate using such silicon wafer
10/26/2006	WO2006111804A1 Semiconductor manufacturing method and semiconductor device
10/26/2006	WO2006111668A1 Method for growing thin semiconductor ribbons
10/26/2006	WO2005051842A3 Elongated nano-structures and related devices
10/26/2006	US20060240608 Method and apparatus for crystallizing silicon, method of forming a thin film transistor, a thin film transistor and a display apparatus using same
10/26/2006	US20060236924 Apparatus for crystal growth of biomacromolecules
10/26/2006	US20060236923 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
10/26/2006	US20060236919 Process for producing single crystal and silicon crystal wafer
10/26/2006	DE112004002325T5 Quarztiegel mit reduziertem Blasengehalt und Verfahren zu seiner Herstellung Quartz crucibles with reduced bubble content, and process for its preparation
10/26/2006	DE102006011035A1 Verfahren zur Herstellung von Keramik mit gerichteten Kristallen und zur Herstellung eines Keramiklaminats Process for the preparation of ceramic having oriented crystals and of producing a ceramic laminate
10/25/2006	EP1713959A2 Method for obtaining carbon nanotubes on supports and composites comprising same
10/25/2006	EP1713951A2 Control of carbon nanotube diameter using cvd or pecvd growth
10/25/2006	EP1505375A4 Method for producing the sensing element of an ultra-violet indicator
10/25/2006	CN1853006A Method of forming carbon nanotubes
10/25/2006	CN1853001A Annealing single crystal chemical vapor depositon diamonds
10/25/2006	CN1851926A Polysilicon film with smooth surface and mfg. method
10/24/2006	US7125801 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
10/24/2006	US7125608 Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
10/24/2006	US7125453 High temperature high pressure capsule for processing materials in supercritical fluids
10/19/2006	WO2006110512A1 Seeded growth process for preparing aluminum nitride single crystals
10/19/2006	WO2006083909A3 Method of making substitutionally carbon-highly doped crystalline si-layers by cvd
10/19/2006	WO2006064882A9 Process for producing boric acid compound crystal and boric acid compound crystal produced by said process
10/19/2006	WO2004034380A3 Bit-wise aluminum oxide optical data storage medium
10/19/2006	US20060234058 Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
10/19/2006	US20060233969 Hybrid beam deposition system and methods for fabricating metal oxide-zno films, p-type zno films, and zno-based II-VI compound semiconductor devices
10/19/2006	DE202005020578U1 Making a crystal useful as optical component e.g. lenses, by drying the crystal raw material, reacting impurities contained in the crystal raw material with scavenger, and melting the crystal raw material
10/19/2006	DE112004001308T5 Chemischer Bedampfungs-Reaktor Chemical vapor deposition reactor
10/18/2006	EP1713118A1 Method for manufacturing semiconductor wafer and system for determining cut position of semiconductor ingot
10/18/2006	EP1713116A1 PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR DIAMOND AND n-TYPE SEMICONDUCTOR DIAMOND
10/18/2006	EP1712662A1 Substrate for thin-film formation, thin-film substrate and light emitting element

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